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61. 发明授权

US08946090B2 Method for etching a layer on a silicon semiconductor substrate 有权
标题翻译：蚀刻硅半导体衬底上的层的方法
公开(公告)号：US08946090B2
公开(公告)日：2015-02-03
申请号：US12452692
申请日：2008-07-02
申请人： Volker Becker , Franz Laermer , Tino Fuchs , Christina Leinenbach
发明人： Volker Becker , Franz Laermer , Tino Fuchs , Christina Leinenbach
IPC分类号： H01L21/302 , H01L21/3065 , H01L21/306 , H01L21/02 , B81C1/00 , H01L21/3213
CPC分类号： H01L21/3065 , B81C1/00531 , B81C1/00595 , B81C2201/0132 , B81C2201/0138 , H01L21/02019 , H01L21/30621 , H01L21/32135
摘要： A method for selective etching of an SiGe mixed semiconductor layer on a silicon semiconductor substrate by dry chemical etching of the SiGe mixed semiconductor layer with the aid of an etching gas selected from the group including ClF3 and/or ClF5, a gas selected from the group including Cl2 and/or HCl being added to the etching gas.
摘要翻译：借助于选自ClF3和/或ClF5的蚀刻气体，通过SiGe混合半导体层的干法化学蚀刻来选择性地蚀刻硅半导体衬底上的SiGe混合半导体层的方法，包括添加到蚀刻气体中的Cl 2和/或HCl。

62. 发明授权

US08703003B2 Selective etching of semiconductor substrate(s) that preserves underlying dielectric layers 有权
标题翻译：选择性蚀刻保留下面介电层的半导体衬底
公开(公告)号：US08703003B2
公开(公告)日：2014-04-22
申请号：US12763635
申请日：2010-04-20
申请人： Kyle S. Lebouitz , David L. Springer , John J. Neumann, Jr.
发明人： Kyle S. Lebouitz , David L. Springer , John J. Neumann, Jr.
IPC分类号： B44C1/22 , C03C15/00 , C03C25/68 , C23F1/00
CPC分类号： H01L21/32135 , B81C1/00595 , B81C2201/0132 , B81C2201/0138 , H01L21/3065 , H01L21/67017
摘要： In a method of vapor etching, a sample that includes a first layer atop of and in contact with a second layer which is atop of and in contact with a third layer, wherein at least the first and second layers are comprised of different materials. The sample is etched by a vapor etchant under first process conditions that cause at least a part of the first layer to be fully removed while leaving the third layer and the second layer underlying the removed part of the first layer substantially unetched. The sample is then etched by the same or a different vapor etchant under second process conditions that cause at least the part of the second layer exposed by the removal of the at least part of the first layer to be fully removed while leaving the third layer underlying the removed part of the second layer substantially unetched.
摘要翻译：在蒸气蚀刻的方法中，包括在与第三层顶部接触并与第三层接触的第二层顶部并与之接触的第一层的样品，其中至少第一层和第二层由不同的材料组成。在第一工艺条件下，通过蒸气蚀刻剂对样品进行蚀刻，使第一层的至少一部分被完全除去，同时留下第三层，而第二层位于第一层的被除去的部分基本上未被蚀刻。然后在第二工艺条件下，通过相同或不同的蒸气蚀刻剂对样品进行蚀刻，这导致通过去除第一层的至少部分而被除去的第二层的至少部分被完全去除，同时留下第三层第二层的去除部分基本上未被蚀刻。

63. 发明授权

US07651946B2 Wet etch processing 失效
标题翻译：湿式蚀刻处理
公开(公告)号：US07651946B2
公开(公告)日：2010-01-26
申请号：US11637020
申请日：2006-12-12
申请人： Nicolle Wilke , Anthony Morrissey
发明人： Nicolle Wilke , Anthony Morrissey
IPC分类号： H01L21/311
CPC分类号： A61M37/0015 , A61M2037/003 , A61M2037/0046 , A61M2037/0053 , B81B2201/055 , B81C1/00626 , B81C99/0065 , B81C2201/0133 , B81C2201/0138
摘要： A method of wet etching produces high-precision microneedle arrays for use in medical applications. The method achieves precise process control over microneedle fabrication, at single wafer or batch-level, using wet etching of silicon with potassium hydroxide (KOH) solution by accurately identifying the etch time endpoint. Hence, microneedles of an exactly required height, shape, sharpness and surface quality are achieved. The outcome is a reliable, reproducible, robust and relatively inexpensive microneedle fabrication process. Microneedles formed by KOH wet etching have extremely smooth surfaces and exhibit superior mechanical and structural robustness to their dry etched counterparts. These properties afford extra reliability to such silicon microneedles, making them ideal for medical applications. The needles can also be hollowed. Wet etched silicon microneedles can then be employed as masters to replicate the improved surface and structural properties in other materials (such as polymers) by moulding.
摘要翻译：湿蚀刻的方法产生用于医疗应用的高精度微针阵列。该方法通过精确地识别蚀刻时间终点，通过使用氢氧化钾（KOH）溶液对硅进行湿蚀刻，在单晶片或批次水平上实现了微针制造的精确过程控制。因此，实现了精确要求的高度，形状，锐度和表面质量的微针。结果是可靠，可重现，稳健且相对便宜的微针制作工艺。通过KOH湿蚀刻形成的微针具有非常光滑的表面，并且对其干蚀刻的对应物表现出优异的机械和结构坚固性。这些性能为这种硅微针提供了额外的可靠性，使其成为医疗应用的理想选择。针也可以是中空的。湿法蚀刻的硅微针可用作主机，通过模制复制其他材料（如聚合物）中改进的表面和结构性能。

64. 发明授权

US07569488B2 Methods of making a MEMS device by monitoring a process parameter 失效
标题翻译：通过监控工艺参数制造MEMS器件的方法
公开(公告)号：US07569488B2
公开(公告)日：2009-08-04
申请号：US11767430
申请日：2007-06-22
申请人： Marjorio Rafanan
发明人： Marjorio Rafanan
IPC分类号： H01L21/302
CPC分类号： B81C1/00476 , B81C1/00801 , B81C99/0065 , B81C2201/0138
摘要： Embodiments of the present invention relate to methods and systems for making a microelectromechanical system MEMS device comprising supplying an etchant to etch one or more sacrificial structures of the system in a chamber. A process parameter relating to the pressure within the chamber is monitored as a function of time to provide an indication of the extent of the etching of the one or more sacrificial structures.
摘要翻译：本发明的实施例涉及用于制造微机电系统（MEMS）装置的方法和系统，包括提供蚀刻剂以蚀刻腔室中的系统的一个或多个牺牲结构。作为时间的函数来监测与室内的压力相关的过程参数，以提供对一个或多个牺牲结构的蚀刻程度的指示。

65. 发明授权

US07479454B2 Method and processing system for monitoring status of system components 有权
标题翻译：监控系统组件状态的方法和处理系统
公开(公告)号：US07479454B2
公开(公告)日：2009-01-20
申请号：US10674703
申请日：2003-09-30
申请人： David L. O'Meara , Daniel Craig Burdett , Stephen H. Cabral , Gert Leusink , John William Kostenko , Cory Wajda
发明人： David L. O'Meara , Daniel Craig Burdett , Stephen H. Cabral , Gert Leusink , John William Kostenko , Cory Wajda
IPC分类号： H01L21/302
CPC分类号： H01L21/67276 , B81C99/0065 , B81C2201/0138 , H01L21/67253
摘要： A method and system for monitoring status of a system component during a process. The method includes exposing a system component to a reactant gas during a process, where the reactant gas is capable of etching the system component material to form an erosion product, and monitoring release of the erosion product during the process to determine status of the system component. Processes that can be monitored include a chamber cleaning process, a chamber conditioning process, a substrate etching process, and a substrate film formation process. The system component can be a consumable system part such as a process tube, a shield, a ring, a baffle, an injector, a substrate holder, a liner, a pedestal, a cap cover, an electrode, and a heater, any of which can further include a protective coating. The processing system includes the system component in a process chamber, a gas injection system for introducing the reactant gas, a chamber protection system for monitoring the status of the system component, and a controller for controlling the processing system in response to the status.
摘要翻译：一种在过程中监视系统组件的状态的方法和系统。该方法包括在过程期间将系统组分暴露于反应气体，其中反应气体能够蚀刻系统组分材料以形成侵蚀产物，并且在该过程期间监测侵蚀产物的释放以确定系统部件的状态。可以监测的方法包括室清洁过程，室调节过程，基板蚀刻工艺和基板成膜工艺。系统组件可以是消耗系统部件，例如处理管，屏蔽件，环，挡板，注射器，衬底保持器，衬垫，基座，帽盖，电极和加热器其可以进一步包括保护涂层。处理系统包括处理室中的系统部件，用于引入反应气体的气体注入系统，用于监视系统部件的状态的室保护系统以及响应于状态来控制处理系统的控制器。

66. 发明申请

US20080147229A1 Method And Apparatus For Monitoring A Microstructure Etching Process 有权
标题翻译：用于监测微结构蚀刻工艺的方法和装置
公开(公告)号：US20080147229A1
公开(公告)日：2008-06-19
申请号：US11814247
申请日：2006-01-17
申请人： Anthony O'Hara , Michael Leavy , Graeme Pringle
发明人： Anthony O'Hara , Michael Leavy , Graeme Pringle
IPC分类号： G06F17/00
CPC分类号： H01J37/32935 , B81C1/00476 , B81C99/0065 , B81C2201/0138
摘要： An etching monitoring apparatus and related method for use in the manufacture of microstructures (and in particular MEMS) located within an etching chamber is described. The apparatus and related method operates by setting the temperature of the chamber within which the microstructure is located at a starting temperature, and maintaining the partial pressure of an etching gas within the chamber at a constant value. As a result the surface temperature of the microstructure within the chamber is primarily determined by the etch rate. Therefore, by employing a thermometer to monitor the change in etching surface temperature, a direct diagnostic for monitoring the etching process is provided.
摘要翻译：描述了用于制造位于蚀刻室内的微结构（特别是MEMS）的蚀刻监测装置和相关方法。该装置和相关方法通过将微观结构所在的室的温度设定在起始温度并将室内的蚀刻气体的分压保持在恒定值来进行操作。结果，室内微结构的表面温度主要由蚀刻速率决定。因此，通过采用温度计来监测蚀刻表面温度的变化，提供了用于监测蚀刻工艺的直接诊断。

67. 发明申请

US20060211253A1 Method and apparatus for monitoring plasma conditions in an etching plasma processing facility 审中-公开
标题翻译：用于监测蚀刻等离子体处理设备中的等离子体条件的方法和装置
公开(公告)号：US20060211253A1
公开(公告)日：2006-09-21
申请号：US11081439
申请日：2005-03-16
申请人： Ing-shin Chen , Jeffrey Neuner
发明人： Ing-shin Chen , Jeffrey Neuner
IPC分类号： H01L21/302 , G01L21/30 , C23F1/00
CPC分类号： B81C1/00587 , B81C99/0065 , B81C2201/0138 , C23C16/4405 , G01N27/16 , H01J37/32935
摘要： The present invention relates to a method and system of using downstream sensor elements for determining the plasma conditions (e.g., plasma etching end point) in a semiconductor etching facility that utilizes halogen-containing plasma and/or oxygen-containing plasma. Such sensor elements are capable of exhibiting temperature change in the presence of energetic gas species, e.g., fluorine, chlorine, iodine, bromine, oxygen, and derivatives and radicals thereof that are generated by the plasma, and correspondingly generating an output signal indicative of such temperature change for determination of the plasma conditions in the etching plasma processing facility.
摘要翻译：本发明涉及使用下游传感器元件来确定半导体蚀刻设备中利用含卤素等离子体和/或含氧等离子体的等离子体条件（例如，等离子体蚀刻终点）的方法和系统。这样的传感器元件能够在由等离子体产生的能量气体物质例如氟，氯，碘，溴，氧及其衍生物和自由基的存在下表现出温度变化，并且相应地产生指示其的输出信号用于确定蚀刻等离子体处理设备中的等离子体条件的温度变化。

68. 发明申请

US20040069747A1 Apparatus and method for detecting an endpoint in a vapor phase etch 有权
标题翻译：用于检测气相蚀刻中的端点的装置和方法
公开(公告)号：US20040069747A1
公开(公告)日：2004-04-15
申请号：US10269149
申请日：2002-10-11
申请人： REFLECTIVITY, INC., a California corporation
发明人： Satyadev R. Patel , Gregory P. Schaadt , Douglas B. MacDonald , Niles K. MacDonald , Hongqin Shi
IPC分类号： G01L021/30 , G01R031/00
CPC分类号： H01J37/32963 , B81C1/00476 , B81C1/00587 , B81C99/0065 , B81C2201/0132 , B81C2201/0138 , H01J37/32449 , H01J37/32935
摘要： Processes for the removal of a layer or region from a workpiece material by contact with a process gas in the manufacture of a microstructure are enhanced by the ability to accurately determine the endpoint of the removal step. A vapor phase etchant is used to remove a material that has been deposited on a substrate, with or without other deposited structure thereon. By creating an impedance at the exit of an etching chamber (or downstream thereof), as the vapor phase etchant passes from the etching chamber, a gaseous product of the etching reaction is monitored, and the endpoint of the removal process can be determined. The vapor phase etching process can be flow through, a combination of flow through and pulse, or recirculated back to the etching chamber
摘要翻译：通过与制造微结构中的工艺气体接触从工件材料去除层或区域的工艺通过精确地确定去除步骤的终点的能力增强。气相蚀刻剂用于去除已经沉积在基底上的材料，其上具有或不具有其它沉积结构。通过在蚀刻室（或其下游）的出口处产生阻抗，当气相蚀刻剂从蚀刻室通过时，监测蚀刻反应的气态产物，并且可以确定去除过程的终点。气相蚀刻工艺可以流过，流过和脉冲的组合，或再循环回蚀刻室

69. 发明授权

US06652710B2 Process monitoring apparatus and method 失效
标题翻译：过程监控装置及方法
公开(公告)号：US06652710B2
公开(公告)日：2003-11-25
申请号：US09322912
申请日：1999-06-01
申请人： James P. Cruse
发明人： James P. Cruse
IPC分类号： H01L2166
CPC分类号： B24B37/013 , B81C1/00587 , B81C99/0065 , B81C2201/0132 , B81C2201/0138 , H01J37/32963 , H01L22/20 , H01L22/26 , H01L2924/0002 , H01L2924/00
摘要： An apparatus capable of processing a wafer, comprises a chamber adapted to process the wafer, whereby one or more parameters of the process being conducted in the chamber may change during processing of the wafer; and a signal analyzer adapted to receive a plurality of input signals relating to the parameters and provide an output signal in relation to the input signals.
摘要翻译：能够处理晶片的装置包括适于处理晶片的室，由此在晶片的处理过程中在室内进行的工艺的一个或多个参数可能改变; 以及信号分析器，适于接收与参数相关的多个输入信号，并提供与输入信号相关的输出信号。

70. 发明申请

US20030073302A1 Methods for formation of air gap interconnects 审中-公开
标题翻译：形成气隙互连的方法
公开(公告)号：US20030073302A1
公开(公告)日：2003-04-17
申请号：US10270465
申请日：2002-10-11
申请人： REFLECTIVITY, INC., a California corporation
发明人： Andrew G. Huibers
IPC分类号： H01L021/4763
CPC分类号： B81C1/00801 , B81C1/00095 , B81C1/00476 , B81C99/0065 , B81C2201/0138 , B81C2201/117 , H01L21/7682
摘要： Processes are disclosed for forming integrated circuit devices where multilayered structures are formed having between layers a removable silicon material. The layers adjacent the removable silicon can be either conducting or insulating or both. After forming one or more layers with the removable silicon therebetween, the silicon is removed so as to provide for an air-gap dielectric. In one embodiment, adjacent layers are copper. Between the copper and removable silicon can be a barrier layer, such as a transition metal-silicon-nitride layer. In a preferred embodiment, the removable silicon is removed with a gas phase interhalogen or noble gas halide.
摘要翻译：公开了用于形成集成电路器件的工艺，其中多层结构在层之间形成可移除的硅材料。与可去除的硅相邻的层可以是导电的或绝缘的，也可以是两者。在其间具有可去除的硅形成一个或多个层之后，去除硅以提供气隙电介质。在一个实施例中，相邻层是铜。在铜和可移除的硅之间可以是阻挡层，例如过渡金属 - 氮化硅层。在优选的实施方案中，用气相卤间或惰性气体卤化物除去可除去的硅。

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