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1. 发明申请

US20100267242A1 Selective Etching Of Semiconductor Substrate(s) That Preserves Underlying Dielectric Layers 有权
标题翻译：保护基底电介质层的半导体衬底的选择性蚀刻
公开(公告)号：US20100267242A1
公开(公告)日：2010-10-21
申请号：US12763635
申请日：2010-04-20
申请人： Kyle S. Lebouitz , David L. Springer , John J. Neumann, JR.
发明人： Kyle S. Lebouitz , David L. Springer , John J. Neumann, JR.
IPC分类号： H01L21/306 , H01L21/3065
CPC分类号： H01L21/32135 , B81C1/00595 , B81C2201/0132 , B81C2201/0138 , H01L21/3065 , H01L21/67017
摘要： In a method of vapor etching, a sample that includes a first layer atop of and in contact with a second layer which is atop of and in contact with a third layer, wherein at least the first and second layers are comprised of different materials. The sample is etched by a vapor etchant under first process conditions that cause at least a part of the first layer to be fully removed while leaving the third layer and the second layer underlying the removed part of the first layer substantially unetched. The sample is then etched by the same or a different vapor etchant under second process conditions that cause at least the part of the second layer exposed by the removal of the at least part of the first layer to be fully removed while leaving the third layer underlying the removed part of the second layer substantially unetched.
摘要翻译：在蒸气蚀刻的方法中，包括在与第三层顶部接触并与第三层接触的第二层顶部并与之接触的第一层的样品，其中至少第一层和第二层由不同的材料组成。在第一工艺条件下，通过蒸气蚀刻剂对样品进行蚀刻，使第一层的至少一部分被完全除去，同时留下第三层，而第二层位于第一层的被除去的部分基本上未被蚀刻。然后在第二工艺条件下，通过相同或不同的蒸气蚀刻剂对样品进行蚀刻，这导致通过去除第一层的至少部分而被除去的第二层的至少部分被完全去除，同时留下第三层第二层的去除部分基本上未被蚀刻。

2. 发明授权

US06887337B2 Apparatus for etching semiconductor samples and a source for providing a gas by sublimation thereto 有权
公开(公告)号：US06887337B2
公开(公告)日：2005-05-03
申请号：US09839763
申请日：2001-04-20
申请人： Kyle S. Lebouitz , Michele Migliuolo
发明人： Kyle S. Lebouitz , Michele Migliuolo
IPC分类号： B81C1/00 , C23F4/00 , H01J37/32 , H01L21/302 , H05H1/00 , C23F1/00 , H01L21/00
CPC分类号： H01J37/3244 , H01J37/32458
摘要： An etching apparatus for etching semi combustion samples may include one or more variable volume expansion chambers, two or more fixed volume expansion chambers, or combinations thereof in fluid communication with an etching chamber and a source of etching gas, such as xenon difluoride. The apparatus may further include a source of a mixing gas. An etching apparatus may also include a source of etching gas, an etching chamber in fluid communication with the source of etching gas, a flow controller connected between the source of etching gas and the etching chamber, and a vacuum pump in fluid communication with the etching chamber. A source for providing a gas by sublimation from a solid material is also provided, including a vacuum tight container and a mesh mounted in the interior of the vacuum tight container, wherein the mesh is adapted to receive and restrain the solid material.

3. 发明申请

US20080207001A1 Pulsed Etching Cooling 有权
标题翻译：脉冲蚀刻冷却
公开(公告)号：US20080207001A1
公开(公告)日：2008-08-28
申请号：US12064370
申请日：2006-08-23
申请人： Kyle S. Lebouitz , David L. Springer
发明人： Kyle S. Lebouitz , David L. Springer
IPC分类号： H01L21/306
CPC分类号： H01L21/3065 , H01L21/32135 , H01L21/67109
摘要： In an apparatus and method of vapor etching, a sample (S) to be etched is located in a main chamber (107) from which the atmosphere inside is evacuated. Etching gas is input into the main chamber (107) for a first period of time. Thereafter, the etching gas is evacuated from the main chamber (107) and cooling/purging gas is input into the main chamber for a second interval of time. Thereafter, the cooling/purging gas is evacuated from the main chamber (107). Desirably, the steps of inputting the etching gas into the main chamber (107) for the first period of time, evacuating the etching gas from the main chamber, inputting the cooling/purging gas into the main chamber (107) for the second period of time, and evacuating the cooling/purging gas from the main chamber are repeated until samples have been etched to a desired extent.
摘要翻译：在蒸气蚀刻的装置和方法中，待蚀刻的样品（S）位于主室（107）中，从其中抽空空气。蚀刻气体在第一时间段内输入主室（107）。之后，从主室107排出蚀刻气体，第二时间将冷却/净化气体输入主室。之后，从主室（107）排出冷却/净化气体。期望的是，将蚀刻气体输入到主室（107）中一段时间的步骤，从主室排出蚀刻气体，将冷却/净化气体输入到主室（107）的第二时段重复时间，并从主室排出冷却/净化气体，直到样品已经被蚀刻到期望的程度。

4. 发明授权

US06972199B2 Method of making a cutting instrument having integrated sensors 失效
标题翻译：制作具有集成传感器的切割仪器的方法
公开(公告)号：US06972199B2
公开(公告)日：2005-12-06
申请号：US10124082
申请日：2002-04-17
申请人： Kyle S. Lebouitz , Michele Migliuolo
发明人： Kyle S. Lebouitz , Michele Migliuolo
IPC分类号： B26B11/00 , A61B17/00 , A61B17/04 , A61B17/32 , A61B17/34 , A61B18/14 , A61B19/00 , H01L21/00 , H01L21/66
CPC分类号： A61B17/3211 , A61B17/32 , A61B18/1402 , A61B2017/00022 , A61B2017/00084 , A61B2017/00128 , A61B2090/064 , A61B2090/0814
摘要： A cutting instrument including a metal blade has a recess formed therein and a semiconductor substrate affixed to the blade in the recess. The semiconductor substrate includes at least one sensor formed thereon. The sensor formed on the semiconductor substrate may comprise at least one or an array of a strain sensors, pressure sensors, nerve sensors, temperature sensors, density sensors, accelerometers, and gyroscopes. The cutting instrument may also further include a handle wherein the blade is affixed to the handle and the semiconductor substrate is electrically coupled to the handle. The handle may then be coupled, either physically or by wireless transmission, to a computer that is adapted to display information to a person using the cutting instrument based on signals generated by one or more of the sensors formed on the semiconductor substrate. The computer or handle may also be adapted to store data based on the signals generated by one or more of the sensors. A method of making said cutting instrument includes the steps of at least one sensor being formed on a semiconductor wafer and a layer of photoresist being applied on a top side of the semiconductor wafer according to a pattern that matches the defined shape of the semiconductor substrate. The portion of the semiconductor wafer not covered by the photoresist is removed and thereafter the photoresist is removed from the semiconductor wafer, thereby leaving the semiconductor substrate having a defined shape and at least one sensor formed thereon. The semiconductor substrate having a defined shape and at least one sensor formed thereon is then affixed to a metal blade in a recess formed in said blade.
摘要翻译：包括金属刀片的切割仪器具有形成在其中的凹部和在凹部中固定到刀片的半导体衬底。半导体衬底包括形成在其上的至少一个传感器。形成在半导体衬底上的传感器可以包括应变传感器，压力传感器，神经传感器，温度传感器，密度传感器，加速度计和陀螺仪中的至少一个或多个阵列。切割仪器还可以进一步包括手柄，其中刀片固定到手柄，并且半导体衬底电耦合到手柄。然后可以将手柄物理地或通过无线传输耦合到计算机，该计算机适于基于在半导体衬底上形成的一个或多个传感器产生的信号，使用切割仪器向人显示信息。计算机或手柄还可以适于基于由一个或多个传感器产生的信号来存储数据。制造所述切割器具的方法包括以下步骤：至少一个传感器形成在半导体晶片上，并且光致抗蚀剂层根据与半导体衬底的限定形状匹配的图案施加在半导体晶片的顶侧上。去除未被光致抗蚀剂覆盖的半导体晶片的部分，然后从半导体晶片去除光致抗蚀剂，从而留下具有限定形状的半导体衬底和形成在其上的至少一个传感器。具有限定形状的半导体衬底和形成在其上的至少一个传感器然后被固定到形成在所述刀片中的凹部中的金属刀片。

5. 发明授权

US09576824B2 Etching chamber with subchamber 有权
标题翻译：蚀刻室与子室
公开(公告)号：US09576824B2
公开(公告)日：2017-02-21
申请号：US11816760
申请日：2006-02-22
申请人： Kyle S. Lebouitz , Edward F. Hinds
发明人： Kyle S. Lebouitz , Edward F. Hinds
IPC分类号： H01L21/67 , H01L21/677
CPC分类号： H01L21/67069 , H01L21/67063 , H01L21/67745 , H01L21/67751
摘要： In an apparatus for etching a semiconductor wafer or sample (101), the semiconductor wafer or sample is placed on a sample holder (104) disposed in a first chamber (103). The combination of the semiconductor wafer or sample and the sample holder is enclosed within a second chamber (130) inside the first chamber. Gas is evacuated from the second chamber and an etching gas is introduced into the second chamber, but not into the first chamber, to etch the semiconductor wafer or sample.
摘要翻译：在用于蚀刻半导体晶片或样品（101）的设备中，将半导体晶片或样品放置在设置在第一室（103）中的样品架（104）上。半导体晶片或样品与样品保持器的组合被封装在第一腔室内的第二腔室（130）内。气体从第二室排出，并且蚀刻气体被引入第二室，但不进入第一室，以蚀刻半导体晶片或样品。

6. 发明申请

US20120244715A1 HIGH-SELECTIVITY ETCHING SYSTEM AND METHOD 审中-公开
标题翻译：高选择性蚀刻系统和方法
公开(公告)号：US20120244715A1
公开(公告)日：2012-09-27
申请号：US13512634
申请日：2010-12-02
申请人： Kyle S. Lebouitz , Andrew David Johnson , Eugene Karwacki, JR. , Suhas Narayan Ketkar , John Neumann , David L. Springer
发明人： Kyle S. Lebouitz , Andrew David Johnson , Eugene Karwacki, JR. , Suhas Narayan Ketkar , John Neumann , David L. Springer
IPC分类号： H01L21/306 , B05C11/10 , B44C1/22
CPC分类号： H01L21/3065 , H01L21/32135
摘要： In a method and system for vapor etching, a material to be etched and an etch resistant material are placed into an etching chamber. Thereafter, a pressure in the etching chamber is adjusted to a desired pressure and the substrate is exposed to an etching gas and a gas that comprises oxygen. The exposure substantially selectively etches the material to be etched while substantially avoiding the etching of the etch resistant material.
摘要翻译：在用于蒸气蚀刻的方法和系统中，将要蚀刻的材料和耐蚀刻材料放置在蚀刻室中。此后，将蚀刻室中的压力调节到期望的压力，并将衬底暴露于蚀刻气体和包含氧的气体。曝光基本上选择性地蚀刻待蚀刻的材料，同时基本上避免蚀刻抗蚀刻材料。

7. 发明申请

US20090233449A1 ETCHING CHAMBER WITH SUBCHAMBER 有权
标题翻译：蚀刻室与子
公开(公告)号：US20090233449A1
公开(公告)日：2009-09-17
申请号：US11816760
申请日：2006-02-22
申请人： Kyle S. Lebouitz , Edward F. Hinds
发明人： Kyle S. Lebouitz , Edward F. Hinds
IPC分类号： H01L21/02 , H01L21/683 , H01L21/461
CPC分类号： H01L21/67069 , H01L21/67063 , H01L21/67745 , H01L21/67751
摘要： In an apparatus for etching a semiconductor wafer or sample (101), the semiconductor wafer or sample is placed on a sample holder (104) disposed in a first chamber (103). The combination of the semiconductor wafer or sample and the sample holder is enclosed within a second chamber (130) inside the first chamber. Gas is evacuated from the second chamber and an etching gas is introduced into the second chamber, but not into the first chamber, to etch the semiconductor wafer or sample.
摘要翻译：在用于蚀刻半导体晶片或样品（101）的设备中，将半导体晶片或样品放置在设置在第一室（103）中的样品架（104）上。半导体晶片或样品与样品保持器的组合被封装在第一腔室内的第二腔室（130）内。气体从第二室排出，并且蚀刻气体被引入第二室，但不进入第一室，以蚀刻半导体晶片或样品。

8. 发明授权

US06610235B1 Method of fabricating epidermal abrasion device 失效
标题翻译：制造表皮磨损装置的方法
公开(公告)号：US06610235B1
公开(公告)日：2003-08-26
申请号：US09715349
申请日：2000-11-17
申请人： Kyle S. Lebouitz , Albert P. Pisano
发明人： Kyle S. Lebouitz , Albert P. Pisano
IPC分类号： B29C3338
CPC分类号： A61M37/0015 , A61B5/0492 , A61B5/14542 , A61B5/1473 , A61B5/150022 , A61B5/150282 , A61B5/150419 , A61B5/150427 , A61B5/150435 , A61B5/150503 , A61B5/150984 , A61B5/6848 , A61B5/685 , A61B2017/00747 , A61M2037/0038 , A61M2037/0053 , B29C33/3857 , B29L2031/753 , B29L2031/7544
摘要： A method of forming an injection molded epidermal abrasion device includes depositing mold material on an epidermal abrasion device. The epidermal abrasion device is separated from the mold material to yield a mold. An epidermal abrasion device is then formed within the mold. The epidermal abrasion device may include a matrix of isotropically etched structures having isotropically etched sidewalls positioned between wide bases and narrow tips, each isotropically etched structure having a vertical height of at least 20 &mgr;m. The matrix of isotropically etched structures may define a matrix of pyramids.
摘要翻译：形成注射成型表皮磨损装置的方法包括将模具材料沉积在表皮磨损装置上。将表皮磨损装置与模具材料分离以产生模具。然后在模具内形成表皮磨损装置。表皮磨损装置可以包括各向同性蚀刻的结构的矩阵，其具有定位在宽基部和窄尖端之间的各向同性蚀刻的侧壁，每个各向同性蚀刻的结构具有至少20μm的垂直高度。各向同性蚀刻结构的矩阵可以定义一个金字塔矩阵。

9. 发明授权

US06478974B1 Microfabricated filter and shell constructed with a permeable membrane 失效
标题翻译：微型过滤器和壳体用可渗透膜构成
公开(公告)号：US06478974B1
公开(公告)日：2002-11-12
申请号：US09347903
申请日：1999-07-06
申请人： Kyle S. Lebouitz , Roger T. Howe , Albert P. Pisano
发明人： Kyle S. Lebouitz , Roger T. Howe , Albert P. Pisano
IPC分类号： B01D6700
CPC分类号： B81C1/00333 , B01D67/0072 , B01D67/0093 , B01D71/02 , B01D2323/225 , B01D2325/04 , B01L3/502707 , B01L3/502753 , B01L2200/12 , B01L2300/0681 , B81C1/00158 , G01N33/491 , G03F7/00
摘要： A method of fabricating a microfabricated filter. The method includes forming a frame structure and forming a plurality of openings through the frame structure. A permeable polysilicon membrane is formed over the plurality of openings through the frame structure. At least part of the sacrificial structure is etched with an etchant wherein the etchant passes through the permeable polysilicon membrane. The permeable polycrystal silicon membrane may have a thickness of between about 0.05 micrometers and about 0.30 micrometers.
摘要翻译：一种制造微加工过滤器的方法。该方法包括形成框架结构并且通过框架结构形成多个开口。通过框架结构在多个开口上形成可渗透的多晶硅膜。用蚀刻剂蚀刻牺牲结构的至少一部分，其中蚀刻剂通过可渗透的多晶硅膜。可渗透多晶硅膜的厚度可以在约0.05微米至约0.30微米之间。

10. 发明授权

US08257602B2 Pulsed-continuous etching 有权
标题翻译：脉冲连续蚀刻
公开(公告)号：US08257602B2
公开(公告)日：2012-09-04
申请号：US12095626
申请日：2006-11-30
申请人： Kyle S. Lebouitz , David L. Springer
发明人： Kyle S. Lebouitz , David L. Springer
IPC分类号： B44C1/22 , C23F1/08
CPC分类号： H01L21/3065
摘要： In a system and method of etching a sample disposed in an etching chamber, a plurality of separately stored charges of an etching gas is discharged, one at a time, into a sample etching chamber. The discharge of each charge of etching gas occurs such that a momentary overlap exists in the end discharge of one charge of etching gas with the beginning discharge of another charge of etching gas, whereupon the desired flow of etching gas into the etching chamber is maintained. During discharge of one charge of etching gas, a previously discharged charge of etching gas is recharged. The process of discharging a plurality of separately stored charges of an etching gas, one at a time, and recharging at least one previously discharged charges of etching gas during the discharge of at least one charge of etching gas continues until the sample is etched to a desired extent.
摘要翻译：在刻蚀设置在蚀刻室中的样品的系统和方法中，将多个单独存储的蚀刻气体的电荷一次一个地放入样品蚀刻室中。发生每次蚀刻气体的放电，使得在另一次蚀刻气体的开始放电时，在一次电荷的蚀刻气体的末端放电中存在瞬间重叠，由此保持蚀刻气体进入蚀刻室的所需流动。在一次蚀刻气体的放电期间，对先前放电的蚀刻气体进行充电。在至少一次蚀刻气体的放电期间，一次一个地排出多个单独存储的蚀刻气体的电荷并且对至少一个预先排出的蚀刻气体的电荷进行再充电的过程继续，直到样品被蚀刻到期望程度

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