专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

61. 发明申请

US20050272254A1 Method of depositing low resistivity barrier layers for copper interconnects 审中-公开
标题翻译：沉积用于铜互连的低电阻阻挡层的方法
公开(公告)号：US20050272254A1
公开(公告)日：2005-12-08
申请号：US11184404
申请日：2005-07-18
申请人： Peijun Ding , Zheng Xu , Hong Zhang , Xianmin Tang , Praburam Gopalraja , Suraj Rengarajan , John Forster , Jianming Fu , Tony Chiang , Gongda Yao , Fusen Chen , Barry Chin , Gene Kohara
发明人： Peijun Ding , Zheng Xu , Hong Zhang , Xianmin Tang , Praburam Gopalraja , Suraj Rengarajan , John Forster , Jianming Fu , Tony Chiang , Gongda Yao , Fusen Chen , Barry Chin , Gene Kohara
IPC分类号： C23C14/06 , C23C14/16 , C23C14/32 , H01L21/285 , H01L21/44 , H01L21/4763 , H01L21/768
CPC分类号： H01L21/02183 , C23C14/0641 , C23C14/165 , C23C14/541 , C23C14/5806 , H01L21/02266 , H01L21/2855 , H01L21/318 , H01L21/76846 , H01L21/76856 , H01L21/76862 , H01L21/76876
摘要： We have discovered a method of providing a thin approximately from about 2 Å to about 100 Å thick TaN seed layer, which can be used to induce the formation of alpha tantalum when tantalum is deposited over the TaN seed layer. Further, the TaN seed layer exhibits low resistivity, in the range of 30 μΩ cm and can be used as a low resistivity barrier layer in the absence of an alpha tantalum layer. In one embodiment of the method, a TaN film is altered on its surface form the TaN seed layer. In another embodiment of the method, a Ta film is altered on its surface to form the TaN seed layer.
摘要翻译：我们已经发现了一种提供大约约2埃至大约100埃的Ta N种子层的薄膜的方法，当钽沉积在Ta上时可用于诱导形成α钽， SUB> N 种子层。此外，Ta N N种子层在30μΩ·cm的范围内显示低电阻率，并且可以在不存在α钽层的情况下用作低电阻率阻挡层。在该方法的一个实施方案中，TaN膜在其表面上形成Ta N N种子层。在该方法的另一个实施方案中，在其表面上改变Ta膜以形成Ta N N种子层。

62. 发明申请

US20050255700A1 Controlled multi-step magnetron sputtering process 审中-公开
标题翻译：受控多级磁控溅射工艺
公开(公告)号：US20050255700A1
公开(公告)日：2005-11-17
申请号：US11166836
申请日：2005-06-24
申请人： Praburam Gopalraja , Jianming Fu , Fusen Chen , Girish Dixit , Zheng Xu , Wei Wang , Ashok Sinha
发明人： Praburam Gopalraja , Jianming Fu , Fusen Chen , Girish Dixit , Zheng Xu , Wei Wang , Ashok Sinha
IPC分类号： C23C14/34 , C23C14/04 , C23C14/16 , C23C14/32 , C23C14/35 , H01J37/34 , H01L21/203 , H01L21/285 , H01L21/288 , H01L21/768
CPC分类号： H01L21/76844 , C23C14/046 , C23C14/165 , C23C14/185 , C23C14/225 , C23C14/35 , H01J37/3405 , H01J37/342 , H01J37/3423 , H01J37/3452 , H01J37/3455 , H01J37/3458 , H01L21/2855 , H01L21/76805 , H01L21/76843 , H01L21/76862 , H01L21/76865 , H01L21/76873 , H01L2221/1089
摘要： A multi-step sputtering process in plasma sputter reactor having target and magnetron operable in two modes, for example, in a substrate sputter etch and a substrate sputter deposition. The target has an annular vault facing the wafer to be sputter coated. Various types of magnetic means positioned around the vault create a magnetic field supporting a plasma extending over a large volume of the vault. An integrated copper via filling process with the inventive reactor or other reactor includes a first step of highly ionized sputter deposition of copper, which can optionally be used to remove the barrier layer at the bottom of the via, a second step of more neutral, lower-energy sputter deposition of copper to complete the seed layer, and a third step of electroplating copper into the hole to complete the metallization. The first two steps can be also used with barrier metals.
摘要翻译：在等离子体溅射反应器中的多步骤溅射工艺，其具有可在两种模式中操作的靶和磁控管，例如在衬底溅射蚀刻和衬底溅射沉积中。目标具有面向待溅射涂覆的晶片的环形保险库。位于拱顶周围的各种类型的磁性装置产生一个支撑等离子体的磁场，该等离子体延伸在大容积的拱顶上。与本发明的反应器或其它反应器的集成铜通孔填充方法包括铜的高度电离溅射沉积的第一步骤，其可任选地用于去除通孔底部的阻挡层，更中立的，更低的铜的完全溅射沉积以完成种子层，以及将铜电镀到孔中以完成金属化的第三步骤。前两个步骤也可以与阻隔金属一起使用。

63. 发明授权

US06962791B2 Treatment or prophylaxis of diseases caused by pilus-forming bacteria 失效
公开(公告)号：US06962791B2
公开(公告)日：2005-11-08
申请号：US09799608
申请日：2001-03-07
申请人： Scott Hultgren , Meta Kuehn , Zheng Xu , Derek Ogg , Mark Harris , Matti Lepisto , Charles Hal Jones , Jan Kihlberg
发明人： Scott Hultgren , Meta Kuehn , Zheng Xu , Derek Ogg , Mark Harris , Matti Lepisto , Charles Hal Jones , Jan Kihlberg
IPC分类号： A61K31/00 , A61K31/70 , C07H1/00 , G01N33/68 , G01N33/569 , A61K39/108 , A61K39/02
CPC分类号： A61K31/7004 , A61K31/00 , A61K31/70 , C07H1/00 , G01N33/68 , G01N2333/195 , G01N2500/10 , G01N2500/20 , Y02A50/481 , Y10S435/849
摘要： Novel methods for the treatment and/or prophylaxis of diseases caused by tissue-adhering bacteria are disclosed. By interacting with periplasmic molecular chaperones it is achieved that the assembly of pili is prevented or inhibited and thereby the infectivity of the bacteria is diminished. Also disclosed are methods for screening for drugs as well as methods for the de novo design of such drugs, methods which rely on novel computer drug modelling methods involving an approximative calculation of binding free energy between macromolecules. Finally, novel pyranosides which are believed to be capable of interacting with periplasmic molecular chaperones are also disclosed.

64. 发明申请

US20050173239A1 End point detection for sputtering and resputtering 失效
标题翻译：溅射和再溅射的终点检测
公开(公告)号：US20050173239A1
公开(公告)日：2005-08-11
申请号：US10659902
申请日：2003-09-11
申请人： Sasson Somekh , Marc Schweitzer , John Forster , Zheng Xu , Roderick Mosely , Barry Chin , Howard Grunes
发明人： Sasson Somekh , Marc Schweitzer , John Forster , Zheng Xu , Roderick Mosely , Barry Chin , Howard Grunes
IPC分类号： C23C14/04 , C23C14/16 , C23C14/32 , C23C14/54 , C23C14/58 , G01N21/68 , H01J37/32 , H01L21/285 , H01L21/66 , H01L21/768
CPC分类号： C23C14/544 , C23C14/046 , C23C14/165 , C23C14/5833 , C23C14/5873 , G01N21/68 , H01J37/321 , H01J37/32477 , H01J37/32935 , H01J37/32963 , H01J37/3455 , H01L21/2855 , H01L21/76814 , H01L21/76844 , H01L21/76846 , H01L21/76862 , H01L21/76865 , H01L22/26 , H01L2924/0002 , H01L2924/00
摘要： Plasma etching or resputtering of a layer of sputtered materials including opaque metal conductor materials may be controlled in a sputter reactor system. In one embodiment, resputtering of a sputter deposited layer is performed after material has been sputtered deposited and while additional material is being sputter deposited onto a substrate. A path positioned within a chamber of the system directs light or other radiation emitted by the plasma to a chamber window or other optical view-port which is protected by a shield against deposition by the conductor material. In one embodiment, the radiation path is folded to reflect plasma light around the chamber shield and through the window to a detector positioned outside the chamber window. Although deposition material may be deposited onto portions of the folded radiation path, in many applications, the deposition material will be sufficiently reflective to permit the emission spectra to be detected by a spectrometer or other suitable detector without significant signal loss. The etching or resputtering may be terminated when the detector detects that an underlying layer has been reached or when some other suitable process point has been reached.
摘要翻译：可以在溅射反应器系统中控制包括不透明金属导体材料的溅射材料层的等离子体蚀刻或再溅射。在一个实施例中，溅射沉积层的溅射在材料溅射沉积之后进行，并且另外的材料被溅射沉积到衬底上。位于系统的腔室内的路径将等离子体发射的光或其他辐射引导到腔室窗口或其他光学视图端口，其被屏蔽物保护以防止被导体材料沉积。在一个实施例中，辐射路径被折叠以将等离子体光围绕室屏蔽件并且通过窗口反射到位于室窗口外部的检测器。虽然沉积材料可以沉积在折叠辐射路径的部分上，但是在许多应用中，沉积材料将被充分反射，以允许发射光谱由光谱仪或其它合适的检测器检测，而没有显着的信号损失。当检测器检测到已经到达下层或者当达到某些其它合适的处理点时，蚀刻或再溅射可以被终止。

65. 发明授权

US06692617B1 Sustained self-sputtering reactor having an increased density plasma 失效
标题翻译：具有增加密度等离子体的持续自溅射反应器
公开(公告)号：US06692617B1
公开(公告)日：2004-02-17
申请号：US08854008
申请日：1997-05-08
申请人： Jianming Fu , Peijun Ding , Zheng Xu
发明人： Jianming Fu , Peijun Ding , Zheng Xu
IPC分类号： C25C1434
CPC分类号： H01J37/3447 , C23C14/3457 , C23C14/35 , H01J37/3408
摘要： A plasma reactor for physical vapor deposition (PVD), also known as sputtering, which is adapted so that the atomic species sputtered from the target can self-sustain the plasma without the need of a working gas such as argon. The self-sustained sputtering (SSS), which is particularly applicable to copper sputtering, is enabled by several means. The density of the plasma in the region of the magnet assembly of the magnetron is intensified for a fixed target power by reducing the size of the magnets. To provide more uniform sputtering, the small magnetron is scanned in one or two dimensions over the back of the target. The density of the plasma next to the target is also intensified by positioning an anode grid between the target and the substrate, which provides a more planar geometry. Additionally, the substrate can then be biased to more effectively control the energy and directionality of the flux of sputtered particles incident on the wafer.
摘要翻译：用于物理气相沉积（PVD）的等离子体反应器，也称为溅射，其适于使得从目标溅射的原子物质能够自动维持等离子体而不需要诸如氩的工作气体。特别适用于铜溅射的自持溅射（SSS）可以通过几种方式实现。通过减小磁体的尺寸，磁控管的磁体组件的区域中的等离子体的密度增强了固定的目标功率。为了提供更均匀的溅射，小型磁控管在目标背面以一维或二维扫描。靠近目标的等离子体的密度也通过在靶和衬底之间设置阳极栅格来加强，这提供了更平面的几何形状。此外，然后可以将衬底偏置以更有效地控制入射在晶片上的溅射粒子的能量和方向性。

66. 发明授权

US06420127B1 Compounds and pharmaceutical compositions for the treatment and prophylaxis of bacterial infections 失效
标题翻译：用于治疗和预防细菌感染的化合物和药物组合物
公开(公告)号：US06420127B1
公开(公告)日：2002-07-16
申请号：US08640877
申请日：1996-10-10
申请人： Scott Hultgren , Meta Kuehn , Zheng Xu , Derek Ogg , Mark Harris , Matti Lepisto , Charles Hal Jones , Jan Kihlberg
发明人： Scott Hultgren , Meta Kuehn , Zheng Xu , Derek Ogg , Mark Harris , Matti Lepisto , Charles Hal Jones , Jan Kihlberg
IPC分类号： G01N33569
CPC分类号： A61K31/7004 , A61K31/00 , A61K31/70 , C07H1/00 , G01N33/68 , G01N2333/195 , G01N2500/10 , G01N2500/20 , Y02A50/481 , Y10S435/849
摘要： Novel methods for the treatment and/or prophylaxis of diseases caused by tissue-adhering bacteria are disclosed. By interacting with periplasmic molecular chaperones it is achieved that the assembly of pili is prevented or inhibited and thereby the infectivity of the bacteria is diminished. Also disclosed are methods for screening for drugs as well as methods for the de novo design of such drugs, methods which rely on novel computer drug modelling methods involving an approximative calculation of binding free energy between macromolecules. Finally, novel pyranosides which are believed to be capable of interacting with periplasmic molecular chaperones are also disclosed.
摘要翻译：公开了用于治疗和/或预防由组织粘附细菌引起的疾病的新方法。通过与周质分子伴侣相互作用，可以防止或抑制毛细血管的组装，从而减少细菌的感染性。还公开了用于筛选药物的方法以及用于从头设计这些药物的方法，这些方法依赖于涉及大分子之间的结合自由能的近似计算的新型计算机药物建模方法。最后，还公开了被认为能够与周质分子伴侣相互作用的新型吡喃糖苷。

67. 发明授权

US06387695B1 DNA pharmaceutical formulations comprising citrate or triethanolamine and combinations thereof 有权
标题翻译：包含柠檬酸盐或三乙醇胺的DNA药物制剂及其组合
公开(公告)号：US06387695B1
公开(公告)日：2002-05-14
申请号：US09218590
申请日：1998-12-22
申请人： Robert K. Evans , David B. Volkin , Mark W. Bruner , Zheng Xu
发明人： Robert K. Evans , David B. Volkin , Mark W. Bruner , Zheng Xu
IPC分类号： C12N1588
CPC分类号： A61K47/12 , A61K47/02 , A61K47/18 , A61K48/00
摘要： The present invention relates to nucleic acid formulations of pharmaceutical products which comprise citrate and/or triethanolamine in concentrations which enhance stability of the nucleic acid. These formulations are suited for situations where prolonged storage occurs during the distribution and/or storage period prior to use.
摘要翻译：本发明涉及包含提高核酸稳定性浓度的柠檬酸盐和/或三乙醇胺的药物产品的核酸制剂。这些配方适用于在使用前的分配和/或储存期间发生长期储存的情况。

68. 发明授权

US06254746B1 Recessed coil for generating a plasma 失效
标题翻译：用于产生等离子体的嵌入式线圈
公开(公告)号：US06254746B1
公开(公告)日：2001-07-03
申请号：US08853024
申请日：1997-05-08
申请人： Anantha Subramani , John C. Forster , Bradley O. Stimson , Sergio Edelstein , Howard Grunes , Avi Tepman , Zheng Xu
发明人： Anantha Subramani , John C. Forster , Bradley O. Stimson , Sergio Edelstein , Howard Grunes , Avi Tepman , Zheng Xu
IPC分类号： C23C1434
CPC分类号： H01J37/32504 , H01J37/321 , H01J37/32623 , H01J37/32651 , H01J37/34
摘要： A recessed coil for a plasma chamber in a semiconductor fabrication system is provided. Recessing the coil reduces deposition of material onto the coil which in turn leads to a reduction in particulate matter shed by the coil onto the workpiece.
摘要翻译：提供了一种用于半导体制造系统中的等离子体室的凹陷线圈。嵌入线圈减少材料在线圈上的沉积，这又导致线圈在工件上脱落的颗粒物质的减少。

69. 发明授权

US06238533B1 Integrated PVD system for aluminum hole filling using ionized metal adhesion layer 失效
标题翻译：使用电离金属粘合层的铝孔填充的集成PVD系统
公开(公告)号：US06238533B1
公开(公告)日：2001-05-29
申请号：US08951990
申请日：1997-10-16
申请人： Peter Satitpunwaycha , Gongda Yao , Kenny King-Tai Ngan , Zheng Xu
发明人： Peter Satitpunwaycha , Gongda Yao , Kenny King-Tai Ngan , Zheng Xu
IPC分类号： C23C1434
CPC分类号： C23C14/0036 , C23C14/046 , C23C14/0641 , C23C14/14 , C23C14/32 , C23C14/345 , C23C14/35 , C23C14/358 , C23C14/568 , H01J37/321 , H01J37/34 , H01J2237/32 , H01L21/28518 , H01L21/76843 , H01L21/76846 , H01L21/76855 , H01L21/76876 , H01L21/76877 , H01L21/76882 , H01L23/485 , H01L23/5226 , H01L23/53223 , H01L23/53233 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： A hole filling process for an integrated circuit in which two wiring levels in the integrated circuit are connected by a narrow hole, especially where the underlying level is silicon. First, a physical vapor deposition (PVD) process fills a barrier tri-layer into the hole. The barrier tri-layer includes sequential layers of Ti, TiN, and graded TiNx, grown under conditions of a high-density plasma. Thereafter, a first aluminum layer is PVD deposited under conditions of a high-density plasma. A filling aluminum layer is then deposited by standard PVD techniques.
摘要翻译：用于集成电路的孔填充处理，其中集成电路中的两个布线电平通过窄孔连接，特别是在下层是硅的情况下。首先，物理气相沉积（PVD）工艺将阻挡三层填充到孔中。阻挡三层包括在高密度等离子体条件下生长的Ti，TiN和分级TiNx的顺序层。此后，在高密度等离子体的条件下沉积第一铝层。然后通过标准PVD技术沉积填充铝层。

70. 发明授权

US06217718B1 Method and apparatus for reducing plasma nonuniformity across the surface of a substrate in apparatus for producing an ionized metal plasma 失效
标题翻译：用于在用于产生电离金属等离子体的装置中减少衬底表面上的等离子体不均匀性的方法和装置
公开(公告)号：US06217718B1
公开(公告)日：2001-04-17
申请号：US09251690
申请日：1999-02-17
申请人： Ralf Holmann , Zheng Xu
发明人： Ralf Holmann , Zheng Xu
IPC分类号： C23C1434
CPC分类号： H01J37/321 , C23C14/32 , C23C14/358
摘要： An apparatus for processing a workpiece by delivering ions to the workpiece, which apparatus includes a processing chamber, a workpiece support having a workpiece support surface in the chamber, a sputtering target in the chamber and a coil for creating an inductively coupled plasma to sputter material from the target, ionize the sputtered material and direct the ionized, sputtered material at the workpiece. The coil is connected to receive an RF current for establishing in the coil an RF voltage having a peak-to-peak amplitude which varies between a minimum value at a first location along the circumference and a maximum value at a second location along the circumference, the first and second locations being substantially diametrically opposite one another, the RF voltage variation producing a corresponding variation in plasma density around the central axis. In order to counteract this plasma density variation, the coil is positioned so that the second location is at a greater distance than the first location from a plane containing the workpiece support surface. The coil may be formed to have a cross section which varies along the circumference from a maximum area at the first location to a minimum area at the second location.
摘要翻译：一种用于通过将离子输送到工件来处理工件的装置，该装置包括处理室，在腔室中具有工件支撑表面的工件支撑件，腔室中的溅射靶，以及用于产生感应耦合等离子体以溅射材料的线圈从目标，离子化溅射的材料，并引导电离溅射材料在工件。线圈被连接以接收RF电流，以在线圈中建立具有在沿着圆周的第一位置处的最小值和沿着圆周的第二位置处的最大值之间变化的峰 - 峰幅度的RF电压，第一和第二位置基本上沿径向相反，RF电压变化产生围绕中心轴的等离子体密度的相应变化。为了抵消该等离子体密度变化，线圈被定位成使得第二位置距离包含工件支撑表面的平面的第一位置更大的距离。线圈可以形成为具有沿着圆周从第一位置处的最大面积变化到第二位置处的最小面积的横截面。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式