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1. 发明申请

US20050056536A1 Multi-step magnetron sputtering process 有权
标题翻译：多级磁控溅射工艺
公开(公告)号：US20050056536A1
公开(公告)日：2005-03-17
申请号：US10934231
申请日：2004-09-03
申请人： Praburam Gopalraja , Jianming Fu , Fusen Chen , Girish Dixit , Zheng Xu , Wei Wang , Ashok Sinha
发明人： Praburam Gopalraja , Jianming Fu , Fusen Chen , Girish Dixit , Zheng Xu , Wei Wang , Ashok Sinha
IPC分类号： C23C14/34 , C23C14/04 , C23C14/16 , C23C14/32 , C23C14/35 , H01J37/34 , H01L21/203 , H01L21/285 , H01L21/288 , H01L21/768
CPC分类号： H01L21/76844 , C23C14/046 , C23C14/165 , C23C14/185 , C23C14/225 , C23C14/35 , H01J37/3405 , H01J37/342 , H01J37/3423 , H01J37/3452 , H01J37/3455 , H01J37/3458 , H01L21/2855 , H01L21/76805 , H01L21/76843 , H01L21/76862 , H01L21/76865 , H01L21/76873 , H01L2221/1089
摘要： A multi-step sputtering process in plasma sputter reactor having target and magnetron operable in two modes, for example, in a substrate sputter etch and a substrate sputter deposition. The target has an annular vault facing the wafer to be sputter coated. Various types of magnetic means positioned around the vault create a magnetic field supporting a plasma extending over a large volume of the vault. An integrated copper via filling process with the inventive reactor or other reactor includes a first step of highly ionized sputter deposition of copper, which can optionally be used to remove the barrier layer at the bottom of the via, a second step of more neutral, lower-energy sputter deposition of copper to complete the seed layer, and a third step of electroplating copper into the hole to complete the metallization. The first two steps can be also used with barrier metals.
摘要翻译：在等离子体溅射反应器中的多步骤溅射工艺，其具有可在两种模式中操作的靶和磁控管，例如在衬底溅射蚀刻和衬底溅射沉积中。目标具有面向待溅射涂覆的晶片的环形保险库。位于拱顶周围的各种类型的磁性装置产生一个支撑等离子体的磁场，该等离子体延伸在大容积的拱顶上。与本发明的反应器或其它反应器的集成铜通孔填充方法包括铜的高度电离溅射沉积的第一步骤，其可任选地用于去除通孔底部的阻挡层，更中立的，更低的铜的完全溅射沉积以完成种子层，以及将铜电镀到孔中以完成金属化的第三步骤。前两个步骤也可以与阻隔金属一起使用。

2. 发明申请

US20070095654A1 Controlled multi-step magnetron sputtering process 审中-公开
标题翻译：受控多级磁控溅射工艺
公开(公告)号：US20070095654A1
公开(公告)日：2007-05-03
申请号：US11636751
申请日：2006-12-11
申请人： Praburam Gopalraja , Jianming Fu , Fusen Chen , Girish Dixit , Zheng Xu , Wei Wang , Ashok Sinha
发明人： Praburam Gopalraja , Jianming Fu , Fusen Chen , Girish Dixit , Zheng Xu , Wei Wang , Ashok Sinha
IPC分类号： C23C14/00
CPC分类号： H01L21/76844 , C23C14/046 , C23C14/165 , C23C14/185 , C23C14/225 , C23C14/35 , H01J37/3405 , H01J37/342 , H01J37/3423 , H01J37/3452 , H01J37/3455 , H01J37/3458 , H01L21/2855 , H01L21/76805 , H01L21/76843 , H01L21/76862 , H01L21/76865 , H01L21/76873 , H01L2221/1089
摘要： A multi-step sputtering process in plasma sputter reactor having target and magnetron operable in two modes, for example, in a substrate sputter etch and a substrate sputter deposition. The target has an annular vault facing the wafer to be sputter coated. Various types of magnetic means positioned around the vault create a magnetic field supporting a plasma extending over a large volume of the vault. An integrated copper via filling process with the inventive reactor or other reactor includes a first step of highly ionized sputter deposition of copper, which can optionally be used to remove the barrier layer at the bottom of the via, a second step of more neutral, lower-energy sputter deposition of copper to complete the seed layer, and a third step of electroplating copper into the hole to complete the metallization. The first two steps can be also used with barrier metals.
摘要翻译：在等离子体溅射反应器中的多步骤溅射工艺，其具有可在两种模式中操作的靶和磁控管，例如在衬底溅射蚀刻和衬底溅射沉积中。目标具有面向待溅射涂覆的晶片的环形保险库。位于拱顶周围的各种类型的磁性装置产生一个支撑等离子体的磁场，该等离子体延伸在大容积的拱顶上。与本发明的反应器或其它反应器的集成铜通孔填充方法包括铜的高度电离溅射沉积的第一步骤，其可任选地用于去除通孔底部的阻挡层，更中立的，更低的铜的完全溅射沉积以完成种子层，以及将铜电镀到孔中以完成金属化的第三步骤。前两个步骤也可以与阻隔金属一起使用。

3. 发明申请

US20050255700A1 Controlled multi-step magnetron sputtering process 审中-公开
标题翻译：受控多级磁控溅射工艺
公开(公告)号：US20050255700A1
公开(公告)日：2005-11-17
申请号：US11166836
申请日：2005-06-24
申请人： Praburam Gopalraja , Jianming Fu , Fusen Chen , Girish Dixit , Zheng Xu , Wei Wang , Ashok Sinha
发明人： Praburam Gopalraja , Jianming Fu , Fusen Chen , Girish Dixit , Zheng Xu , Wei Wang , Ashok Sinha
IPC分类号： C23C14/34 , C23C14/04 , C23C14/16 , C23C14/32 , C23C14/35 , H01J37/34 , H01L21/203 , H01L21/285 , H01L21/288 , H01L21/768
CPC分类号： H01L21/76844 , C23C14/046 , C23C14/165 , C23C14/185 , C23C14/225 , C23C14/35 , H01J37/3405 , H01J37/342 , H01J37/3423 , H01J37/3452 , H01J37/3455 , H01J37/3458 , H01L21/2855 , H01L21/76805 , H01L21/76843 , H01L21/76862 , H01L21/76865 , H01L21/76873 , H01L2221/1089
摘要： A multi-step sputtering process in plasma sputter reactor having target and magnetron operable in two modes, for example, in a substrate sputter etch and a substrate sputter deposition. The target has an annular vault facing the wafer to be sputter coated. Various types of magnetic means positioned around the vault create a magnetic field supporting a plasma extending over a large volume of the vault. An integrated copper via filling process with the inventive reactor or other reactor includes a first step of highly ionized sputter deposition of copper, which can optionally be used to remove the barrier layer at the bottom of the via, a second step of more neutral, lower-energy sputter deposition of copper to complete the seed layer, and a third step of electroplating copper into the hole to complete the metallization. The first two steps can be also used with barrier metals.
摘要翻译：在等离子体溅射反应器中的多步骤溅射工艺，其具有可在两种模式中操作的靶和磁控管，例如在衬底溅射蚀刻和衬底溅射沉积中。目标具有面向待溅射涂覆的晶片的环形保险库。位于拱顶周围的各种类型的磁性装置产生一个支撑等离子体的磁场，该等离子体延伸在大容积的拱顶上。与本发明的反应器或其它反应器的集成铜通孔填充方法包括铜的高度电离溅射沉积的第一步骤，其可任选地用于去除通孔底部的阻挡层，更中立的，更低的铜的完全溅射沉积以完成种子层，以及将铜电镀到孔中以完成金属化的第三步骤。前两个步骤也可以与阻隔金属一起使用。

4. 发明授权

US06399479B1 Processes to improve electroplating fill 有权
标题翻译：改善电镀填充的工艺
公开(公告)号：US06399479B1
公开(公告)日：2002-06-04
申请号：US09386077
申请日：1999-08-30
申请人： Fusen Chen , Zheng Xu , Peijun Ding , Barry Chin , Ashok Sinha
发明人： Fusen Chen , Zheng Xu , Peijun Ding , Barry Chin , Ashok Sinha
IPC分类号： H01L214763
CPC分类号： H01L21/76862 , H01L21/76865 , H01L21/76868 , H01L21/76873 , H01L21/76877
摘要： The invention provides a method for filling a structure on a substrate comprising: depositing a barrier layer on one or more surfaces of the structure, depositing a seed layer over the barrier layer, removing a portion of the seed layer, and electrochemically depositing a metal to fill the structure. Preferably, a portion or all of the seed layer formed on the sidewall portion of the structure is removed using a electrochemical de-plating process prior to the electroplating process.
摘要翻译：本发明提供了一种用于在衬底上填充结构的方法，包括：在结构的一个或多个表面上沉积阻挡层，在阻挡层上沉积种子层，去除种子层的一部分，以及电化学沉积金属填写结构。优选地，在电镀工艺之前使用电化学去镀工艺去除在结构的侧壁部分上形成的种子层的一部分或全部。

5. 发明授权

US07709385B2 Method for depositing tungsten-containing layers by vapor deposition techniques 失效
标题翻译：通过气相沉积技术沉积含钨层的方法
公开(公告)号：US07709385B2
公开(公告)日：2010-05-04
申请号：US12335976
申请日：2008-12-16
申请人： Ming Xi , Ashok Sinha , Moris Kori , Alfred W. Mak , Xinliang Lu , Ken Kaung Lai , Karl A. Littau
发明人： Ming Xi , Ashok Sinha , Moris Kori , Alfred W. Mak , Xinliang Lu , Ken Kaung Lai , Karl A. Littau
IPC分类号： H01L21/44
CPC分类号： C23C16/0272 , C23C16/34 , C23C16/45525 , C23C16/45527 , C23C16/45561 , C30B25/02 , C30B25/14 , C30B29/38 , H01L21/28562 , H01L21/76843 , H01L21/76876
摘要： In one embodiment, a method for forming a tungsten-containing material on a substrate is provided which includes forming a tungsten-containing layer by sequentially exposing a substrate to a processing gas and a tungsten-containing gas during an atomic layer deposition process, wherein the processing gas comprises a boron-containing gas and a nitrogen-containing gas, and forming a tungsten bulk layer over the tungsten-containing layer by exposing the substrate to a deposition gas comprising the tungsten-containing gas and a reactive precursor gas during a chemical vapor deposition process. In one example, the tungsten-containing layer and the tungsten bulk layer are deposited within the same processing chamber.
摘要翻译：在一个实施例中，提供了一种在基板上形成含钨材料的方法，其包括通过在原子层沉积工艺期间将衬底顺序地暴露于处理气体和含钨气体来形成含钨层，其中处理气体包括含硼气体和含氮气体，并且在化学气体中通过将衬底暴露于包含含钨气体和反应性前体气体的沉积气体而在含钨层上形成钨体层沉积工艺。在一个实例中，含钨层和钨体层沉积在相同的处理室内。

6. 发明申请

US20090035865A1 MOISTURE SENSOR 审中-公开
标题翻译：水分传感器
公开(公告)号：US20090035865A1
公开(公告)日：2009-02-05
申请号：US11832130
申请日：2007-08-01
申请人： Colette Pamela DeMoor , Ashok Sinha , Ian Gibbons
发明人： Colette Pamela DeMoor , Ashok Sinha , Ian Gibbons
IPC分类号： G01N33/18 , B01J19/00 , G01N21/78
CPC分类号： G01N31/222 , G01N21/81
摘要： A moisture sensor is disclosed which measures cumulative exposure to moisture. The moisture sensor comprises a matrix having a hygroscopic material, a first reagent, and a second reagent which interact only in the presence of water to produce a detectable, irreversible change in the matrix to provide a moisture indication. The moisture sensor may be incorporated with a disposable diagnostic device, whereby a method for preventing the use of such a disposable diagnostic device if exposed to excessive cumulative humidity is also disclosed.
摘要翻译：公开了一种测量累积暴露于湿气的湿度传感器。水分传感器包括具有吸湿材料，第一试剂和第二试剂的基质，其仅在水存在下相互作用以在基质中产生可检测的不可逆变化以提供湿气指示。湿度传感器可以与一次性诊断装置并入，由此也公开了如果暴露于过度累积湿度时防止使用这种一次性诊断装置的方法。

7. 发明申请

US20070238305A1 PLASMA DIELECTRIC ETCH PROCESS INCLUDING EX-SITU BACKSIDE POLYMER REMOVAL FOR LOW-DIELECTRIC CONSTANT MATERIAL 失效
标题翻译：等离子体电介质蚀刻工艺，包括用于低介电常数材料的EX-SITU BACKSIDE POLMMER REMOVAL
公开(公告)号：US20070238305A1
公开(公告)日：2007-10-11
申请号：US11402074
申请日：2006-04-11
申请人： Gerardo Delgadino , Indrajit Lahiri , Teh-Tien Su , Brian Sheih , Ashok Sinha
发明人： Gerardo Delgadino , Indrajit Lahiri , Teh-Tien Su , Brian Sheih , Ashok Sinha
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L21/31138 , G03F7/427 , H01J37/32357 , H01L21/0209
摘要： A plasma etch process for etching a porous carbon-doped silicon oxide dielectric layer using a photoresist mask is carried out first in an etch reactor by performing a fluorocarbon based etch process on the workpiece to etch exposed portions of the dielectric layer while depositing protective fluorocarbon polymer on the photoresist mask. Then, in an ashing reactor, polymer and photoresist are removed by heating the workpiece to over 100 degrees C., exposing a peripheral portion of the backside of said workpiece, and providing products from a plasma of a hydrogen process gas to reduce carbon contained in polymer and photoresist on said workpiece until the polymer has been removed from a backside of said workpiece. The process gas preferably contains both hydrogen gas and water vapor, although the primary constituent is hydrogen gas. The wafer (workpiece) backside may be exposed by extending the wafer lift pins.
摘要翻译：首先在蚀刻反应器中进行用于蚀刻使用光致抗蚀剂掩模的多孔碳掺杂氧化硅电介质层的等离子体蚀刻工艺，通过在工件上执行基于碳氟化合物的蚀刻工艺来蚀刻介电层的暴露部分，同时沉积保护性氟碳聚合物在光刻胶掩模上。然后，在灰化反应器中，通过将工件加热到超过100摄氏度，去除聚合物和光致抗蚀剂，暴露所述工件背面的周边部分，并提供来自氢处理气体的等离子体的产物，以减少包含在聚合物和光致抗蚀剂，直到聚合物已从所述工件的背面去除。处理气体优选含有氢气和水蒸汽，尽管主要成分是氢气。晶片（工件）背面可以通过延伸晶片提升销来暴露。

8. 发明授权

US07220673B2 Method for depositing tungsten-containing layers by vapor deposition techniques 有权
标题翻译：通过气相沉积技术沉积含钨层的方法
公开(公告)号：US07220673B2
公开(公告)日：2007-05-22
申请号：US11461909
申请日：2006-08-02
申请人： Ming Xi , Ashok Sinha , Moris Kori , Alfred W. Mak , Xinliang Lu , Ken Kaung Lai , Karl A. Littau
发明人： Ming Xi , Ashok Sinha , Moris Kori , Alfred W. Mak , Xinliang Lu , Ken Kaung Lai , Karl A. Littau
IPC分类号： H01L21/44
CPC分类号： C23C16/0272 , C23C16/34 , C23C16/45525 , C23C16/45527 , C23C16/45561 , C30B25/02 , C30B25/14 , C30B29/38 , H01L21/28562 , H01L21/76843 , H01L21/76876
摘要： In one embodiment, a method for forming a tungsten-containing material on a substrate is provided which includes forming a tungsten nucleation layer by sequentially exposing a substrate to a boron-containing gas and a tungsten-containing gas within a processing chamber during an atomic layer deposition process, and forming a tungsten bulk layer on the tungsten nucleation layer by exposing the substrate to a processing gas that contains the tungsten-containing gas and a reactive precursor gas within another processing chamber during a chemical vapor deposition process. In one example, the tungsten nucleation layer is deposited on a dielectric material, such as silicon oxide. In another example, the tungsten nucleation layer is deposited on a barrier material, such as titanium or titanium nitride. Other examples provide that the tungsten nucleation layer and the tungsten bulk layer are deposited in the same processing chamber.
摘要翻译：在一个实施例中，提供了一种用于在基板上形成含钨材料的方法，其包括通过在原子层中将衬底顺序地暴露于处理室内的含硼气体和含钨气体来形成钨成核层通过在化学气相沉积工艺期间将衬底暴露于另一处理室内含有含钨气体和反应性前体气体的处理气体，在钨成核层上形成钨体层。在一个实例中，钨成核层沉积在介电材料如氧化硅上。在另一个实例中，钨成核层沉积在诸如钛或氮化钛的阻挡材料上。其他实例提供了钨成核层和钨本体层沉积在相同的处理室中。

9. 发明申请

US20070066064A1 Methods to avoid unstable plasma states during a process transition 失效
标题翻译：在过程转换过程中避免不稳定的等离子体状态的方法
公开(公告)号：US20070066064A1
公开(公告)日：2007-03-22
申请号：US11372752
申请日：2006-03-10
申请人： Michael Kutney , Daniel Hoffman , Gerardo Delgadino , Ezra Gold , Ashok Sinha , Xiaoye Zhao , Douglas Burns , Shawming Ma
发明人： Michael Kutney , Daniel Hoffman , Gerardo Delgadino , Ezra Gold , Ashok Sinha , Xiaoye Zhao , Douglas Burns , Shawming Ma
IPC分类号： H01L21/00 , G01L21/30 , H01L21/302
CPC分类号： H01L21/67069 , H01L21/31116 , H01L21/76807
摘要： In some implementations, a method is provided in a plasma processing chamber for stabilizing etch-rate distributions during a process transition from one process step to another process step. The method includes performing a pre-transition compensation of at least one other process parameter so as to avoid unstable plasma states by inhibiting formation of a parasitic plasma during the process transition. In some implementations, a method is provided for processing a workpiece in plasma processing chamber, which includes inhibiting deviations from an expected etch-rate distribution by avoiding unstable plasma states during a process transition from one process step to another process step.
摘要翻译：在一些实施方案中，在等离子体处理室中提供了一种方法，用于在从一个处理步骤到另一个处理步骤的过程转变期间稳定蚀刻速率分布。该方法包括执行至少一个其它过程参数的预过渡补偿，以便通过在过程转换期间抑制寄生等离子体的形成来避免不稳定的等离子体状态。在一些实施方案中，提供了一种用于处理等离子体处理室中的工件的方法，其包括通过在从一个工艺步骤转换到另一工艺步骤的过程转变期间避免不稳定的等离子体状态来抑制预期蚀刻速率分布的偏差。

10. 发明申请

US20060035025A1 Activated species generator for rapid cycle deposition processes 审中-公开
标题翻译：用于快速循环沉积工艺的活性物种发生器
公开(公告)号：US20060035025A1
公开(公告)日：2006-02-16
申请号：US11146295
申请日：2005-06-06
申请人： Donald Verplancken , Ashok Sinha
发明人： Donald Verplancken , Ashok Sinha
IPC分类号： C23C14/00 , C23C16/00
CPC分类号： C23C16/45542 , C23C16/452 , H01J37/32357
摘要： A method for providing activated species for a cyclical deposition process is provided herein. In one aspect, the method includes delivering a gas to be activated into a plasma generator, activating the gas to create a volume of reactive species, delivering a fraction of the reactive species into a processing region to react within a substrate therein, and maintaining at least a portion of the gas remaining in the plasma generator in an activated state after delivering the fraction of the gas into the process region. The plasma generator may include a high density plasma (HDP) generator, a microwave generator, a radio-frequency (RF) generator, an inductive-coupled plasma (ICP) generator, a capacitively coupled generator, or combinations thereof.
摘要翻译：本文提供了用于提供用于循环沉积工艺的活化物质的方法。在一个方面，所述方法包括将待激活的气体输送到等离子体发生器中，激活气体以产生一定体积的反应物质，将一部分反应性物质输送到处理区域中以在其内部的基底内反应并维持在在将一部分气体输送到处理区域中之后，剩余在等离子体发生器中的气体的至少一部分处于活化状态。等离子体发生器可以包括高密度等离子体（HDP）发生器，微波发生器，射频（RF）发生器，感应耦合等离子体（ICP）发生器，电容耦合发生器或其组合。

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