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61. 外观设计

USD500064S1 Nozzle for a plasma arc torch 失效
标题翻译：等离子弧焊枪喷嘴
公开(公告)号：USD500064S1
公开(公告)日：2004-12-21
申请号：US29192752
申请日：2003-10-30
申请人： Kazuhiro Kuraoka , Yoshihiro Yamaguchi
设计人： Kazuhiro Kuraoka , Yoshihiro Yamaguchi

62. 发明授权

US06710771B1 Information processing method and apparatus and medium 有权
标题翻译：信息处理方法及装置与介质
公开(公告)号：US06710771B1
公开(公告)日：2004-03-23
申请号：US09570005
申请日：2000-05-12
申请人： Yoshihiro Yamaguchi , Soichi Sato , Jun Suzuki , Tetsuya Kohno , Tota Hasegawa , Yuichiro Ishii , Yoshifumi Ueno
发明人： Yoshihiro Yamaguchi , Soichi Sato , Jun Suzuki , Tetsuya Kohno , Tota Hasegawa , Yuichiro Ishii , Yoshifumi Ueno
IPC分类号： G09G500
CPC分类号： G06F3/0483 , G06F1/1616 , G06F1/1684 , G06F1/169 , G06F3/0362 , Y10S345/902 , Y10S715/973
摘要： An information processing method and apparatus free from a defect in a conventional system that complicated processing operations need to be executed before a user selects a desired application program on a task bar equipped with a start menu button and starts the selected program. A jog dial related application declares to a jog dial state monitor program 54C that it (application) itself is a jog dial related application. The jog dial state monitor program 54C then adds the application software to a list of the jog dial related applications. The display of the jog dial menu is then set to a display proper to the application and apprised to the user in the form of a jog dial guide. The jog dial related application advises the illustration of the jog dial operation in the current state to the jog dial state monitor program 54C in the form of a letter string.
摘要翻译：在用户在配备有开始菜单按钮的任务栏上选择期望的应用程序之前需要执行复杂处理操作的传统系统中的缺陷的信息处理方法和装置，并启动所选择的程序。一个慢跑拨盘相关应用程序向轻骑拨号状态监视程序54C声明它（应用程序）本身是一个与拨盘相关的应用程序。然后，微动拨号状态监视程序54C将应用软件添加到有关微动拨盘相关应用的列表中。然后将微动拨盘菜单的显示设置为适用于应用的显示器，并以慢跑拨盘指南的形式向用户通知。与步进拨盘相关的应用程序建议以字母串的形式将当前状态的微动拨盘操作图示到微动拨号状态监视程序54C。

63. 发明授权

US06523821B2 Paper feeder apparatus for use with image forming apparatus 有权
标题翻译：用于图像形成装置的供纸装置
公开(公告)号：US06523821B2
公开(公告)日：2003-02-25
申请号：US09790155
申请日：2001-02-21
申请人： Nobuyuki Kashiwagi , Masami Fuchi , Yasuyuki Hirai , Yoshihiro Yamaguchi , Yukio Hashimoto , Masaki Higashiyama
发明人： Nobuyuki Kashiwagi , Masami Fuchi , Yasuyuki Hirai , Yoshihiro Yamaguchi , Yukio Hashimoto , Masaki Higashiyama
IPC分类号： B65H100
CPC分类号： G03G15/6502 , B65H5/12 , B65H2406/122 , B65H2406/323
摘要： A feeder apparatus arranged on a side of a main body of an image forming apparatus is provided with a top door and a vertical door. The top door is provided in an opening defined above a sheet stacker, and the vertical door is provided in an opening defined on a side of the sheet stacker to enable an operator to replenish sheets inside the feeder apparatus. Switches are provided to detect as to whether the top door or the vertical door is opened. The feeder apparatus is constructed in such a manner that upward movement of the sheet stacker is suspended when the top door is detected to be opened and that upward and downward movement of the sheet stacker is suspended when the vertical door is detected to be opened.
摘要翻译：设置在图像形成装置的主体侧的馈送装置设置有顶门和垂直门。顶门设置在纸张堆放器上方定义的开口中，垂直门设置在限定在纸张堆放器一侧的开口中，以使操作员能够补充进纸设备内的纸张。提供开关以检测顶门或垂直门是否打开。供纸装置的结构是这样一种方式，当检测到上门打开时，纸张堆垛机向上移动，并且当检测到垂直门被打开时，纸张堆垛机的向上和向下移动被暂停。

64. 发明授权

US06521919B2 Semiconductor device of reduced thermal resistance and increased operating area 失效
标题翻译：半导体器件具有降低的热阻和增加的工作面积
公开(公告)号：US06521919B2
公开(公告)日：2003-02-18
申请号：US09813985
申请日：2001-03-22
申请人： Noritoshi Hirano , Katsumi Satoh , Yoshihiro Yamaguchi
发明人： Noritoshi Hirano , Katsumi Satoh , Yoshihiro Yamaguchi
IPC分类号： H01L2974
CPC分类号： H01L29/66363 , H01L23/051 , H01L29/744 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device is composed a semiconductor substrate having a first conducting-type first semiconductor layer, a second conducting-type second semiconductor layer, a first conducting-type third semiconductor layer, a second conducting-type fourth semiconductor layer and a first conducting-type fifth semiconductor layer, a first main electrode for short-circuiting the first semiconductor layer and the second semiconductor layer, a second main electrode for short-circuiting the fourth semiconductor layer and the fifth semiconductor layer, and a control electrode provided on the third semiconductor layer. The first semiconductor layer and the second semiconductor layer form a joint. The second semiconductor layer and the third semiconductor layer form a joint. The third semiconductor layer and the fourth semiconductor layer form a joint. The fourth semiconductor layer and the fifth semiconductor layer form a joint.
摘要翻译：半导体器件由具有第一导电型第一半导体层，第二导电型第二半导体层，第一导电型第三半导体层，第二导电型第四半导体层和第一导电型第二半导体层第五半导体层，用于使第一半导体层和第二半导体层短路的第一主电极，用于使第四半导体层和第五半导体层短路的第二主电极，以及设置在第三半导体层上的控制电极。第一半导体层和第二半导体层形成接头。第二半导体层和第三半导体层形成接头。第三半导体层和第四半导体层形成接头。第四半导体层和第五半导体层形成接头。

65. 发明授权

US06493828B1 Information processing apparatus, information processing method, and program storage medium 有权
标题翻译：信息处理装置，信息处理方法和程序存储介质
公开(公告)号：US06493828B1
公开(公告)日：2002-12-10
申请号：US09385398
申请日：1999-08-30
申请人： Yoshihiro Yamaguchi , Takahiko Sueyoshi
发明人： Yoshihiro Yamaguchi , Takahiko Sueyoshi
IPC分类号： G06F126
CPC分类号： G06F1/169 , G06F1/1616 , G06F1/1679 , G06F1/1686 , G06F1/3215
摘要： Disclosed herein are an information processing apparatus, an information processing method, and a program storage medium that allow a user to quickly capture an image upon instruction by the user. The information processing apparatus comprising an instructing means for instructing image capturing, an image pick-up means for imaging a subject as instructed through the instructing means and generating image data based on the imaged subject, a recording means for recording the image data generated by the image pick-up means, and a control means for starting fewest possible means required for image capturing including at least the image pick-up means and the recording means when image capturing is instructed through the instructing means with the information processing apparatus in one of an power-off state and an energy saving mode, controlling the started means, and recording the image data generated by the image pick-up means onto the recording means.
摘要翻译：本文公开了一种信息处理装置，信息处理方法和程序存储介质，其允许用户在用户指示时快速捕获图像。该信息处理装置包括用于指示图像捕获的指示装置，用于通过指示装置指示对被摄体进行成像并基于被成像的对象产生图像数据的图像拾取装置，用于记录由图像拾取装置，以及控制装置，用于当至少包括图像拾取装置和记录装置的图像拍摄所需的最少可能装置时，通过指令装置通过信息处理装置指示图像拍摄装置中的一个断电状态和节能模式，控制启动装置，以及将由图像拾取装置产生的图像数据记录到记录装置上。

66. 发明授权

US06477965B2 Power conversion device for a rail way vehicle 有权
标题翻译：轨道车辆电力转换装置
公开(公告)号：US06477965B2
公开(公告)日：2002-11-12
申请号：US09801827
申请日：2001-03-09
申请人： Yoshihiro Yamaguchi , Hiroaki Yoshinari , Takashi Hashimoto
发明人： Yoshihiro Yamaguchi , Hiroaki Yoshinari , Takashi Hashimoto
IPC分类号： H02M100
CPC分类号： B60L9/24 , B60L2200/26 , H02M7/003 , H05K7/20909
摘要： In the railway vehicle power conversion device, an air flow passage is formed by providing an L-shaped partition plate whose long side is in the rail direction, in the interior of a box suspended below the floor of the vehicle. On one side of this partition plate, there are included, in order of the rail direction, a high-speed circuit breaker, relay unit, interface unit and control device. On the other side of partition plate, a pair of smoothing reactors are included on the short side of L-shaped partition plate, and a semiconductor cooling unit is included on the other side of the smoothing reactors and partition. A heat-radiating part of this semiconductor unit projects at the side of air inlet port of air flow passage. Electrically driven fans are fixed within an airflow passage at the smoothing reactors.
摘要翻译：在铁路车辆动力转换装置中，通过在悬挂在车辆底部的箱体的内部设置长边处于轨道方向的L形隔板来形成空气流路。在该隔板的一侧，沿着导轨方向依次包括高速断路器，中继单元，接口单元和控制装置。在隔板的另一侧，在L形隔板的短边上包括一对平滑电抗器，在平滑电抗器的另一侧包括半导体冷却单元并进行分隔。该半导体单元的散热部在气流通道的空气入口侧突出。电动风扇固定在平滑电抗器的气流通道内。

67. 发明授权

US5708287A Power semiconductor device having an active layer 失效
标题翻译：功率半导体器件具有有源层
公开(公告)号：US5708287A
公开(公告)日：1998-01-13
申请号：US564449
申请日：1995-11-29
申请人： Akio Nakagawa , Yoshihiro Yamaguchi , Tomoko Matsudai
发明人： Akio Nakagawa , Yoshihiro Yamaguchi , Tomoko Matsudai
IPC分类号： H01L21/84 , H01L27/12 , H01L27/01 , H01L31/0392
CPC分类号： H01L21/84 , H01L27/1203
摘要： An n.sup.- -type silicon active layer having a thickness of 6 .mu.m or less is formed on a silicon substrate via a silicon oxide film. An npn bipolar transistor with a low withstand voltage and an IGBT with a high withstand voltage are formed in the active layer. The two devices are insulated and isolated from each other through a trench. The bipolar transistor has an n-type well layer formed in the surface of the active layer. A p-type well layer is formed in the surface of the n-type well layer. The thickness of the n-type well layer under the p-type well layer is set to be 1 .mu.m or more. A first n.sup.+ -type diffusion layer is formed in the surface of the n-type well layer. A p.sup.+ -type diffusion layer and a second n.sup.+ -type diffusion layer are formed in the surface of the p-type well layer. The n-type well layer and the first n.sup.+ -type diffusion layer serve as a collector region. The p-type well layer and the p.sup.+ -type diffusion layer serve as a base region. The second n.sup.+ -type diffusion layer serves as an emitter region.
摘要翻译：通过氧化硅膜在硅衬底上形成厚度为6μm以下的n型硅有源层。在有源层中形成具有低耐压的npn双极晶体管和具有高耐压的IGBT。两个器件通过沟槽彼此绝缘和隔离。双极晶体管在有源层的表面形成有n型阱层。 p型阱层形成于n型阱层的表面。 p型阱层下面的n型阱层的厚度设定为1μm以上。在n型阱层的表面形成第一n +型扩散层。在p型阱层的表面形成p +型扩散层和第n +型扩散层。 n型阱层和第一n +型扩散层用作集电极区域。 p型阱层和p +型扩散层用作基极区域。第二n +型扩散层用作发射极区域。

68. 发明授权

US5424507A Controlling working gas flow rate and arc current level in plasma arc cutting machine 失效
标题翻译：控制等离子弧切割机的工作气体流量和电弧电流
公开(公告)号：US5424507A
公开(公告)日：1995-06-13
申请号：US230597
申请日：1994-04-21
申请人： Yoshihiro Yamaguchi
发明人： Yoshihiro Yamaguchi
IPC分类号： B23K10/00 , B23K9/00
CPC分类号： B23K10/006
摘要： A plasma arc cutting machine which utilizes oxygen as a working gas is controlled to provide: a long electrode life without serious electrode wear even if the starting operation of the arc is repeated frequently; a smooth transition from a pilot arc to a main arc even when a thin plate is cut; and a low noise characteristic. A first stop valve (4) is connected in parallel with a serially connected second stop valve (7) and a gas flow regulating means (6) between a supply of working gas and a plasma torch (1). In response to a start signal S.sub.T, the second stop valve (7) is opened so as to supply the working gas at a small flow rate Q.sub.P to the plasma torch (1) via the gas flow regulating means (6). After a pilot arc is started, the first stop valve (4) is gradually opened so as to gradually increase the flow rate of the working gas from the small flow rate Q.sub.P up to a normal flow rate Q.sub.M, and at the same time, the pilot current is gradually increased from an initial pilot current level I.sub.S to a pilot current level I.sub.P, corresponding to the gradual increase in the flow rate of the working gas up to the normal flow rate Q.sub.M. In response to a stop signal S.sub.P, the arc current is gradually reduced from the cutting current level I.sub.M to a lower level I.sub.D at which the main arc (13) is extinguished.
摘要翻译：控制利用氧作为工作气体的等离子体电弧切割机，即使电弧的起动操作频繁地重复，电极寿命长也不会严重; 即使在切割薄板的情况下，从导电弧到主弧的平滑过渡; 和低噪声特性。第一截止阀（4）与串联连接的第二截止阀（7）和气体流量调节装置（6）并联连接在工作气体和等离子体焰炬（1）之间。响应于启动信号ST，第二截止阀（7）打开，以便通过气流调节装置（6）将小流量QP的工作气体供应到等离子体焰炬（1）。在开始引弧之后，第一截止阀（4）逐渐打开，从而将工作气体的流量从小流量QP逐渐增加到正常流量QM，同时，引导电流从初始引导电流电平IS逐渐增加到引导电流电平IP，对应于工作气体的流量逐渐增加直到正常流量QM。响应于停止信号SP，电弧电流从切割电流电平IM逐渐减小到主电弧（13）熄灭的较低电平ID。

69. 发明授权

US5237186A Conductivity-modulation metal oxide field effect transistor with single gate structure 失效
标题翻译：具有单栅极结构的电导率调制金属氧化物场效应晶体管
公开(公告)号：US5237186A
公开(公告)日：1993-08-17
申请号：US823834
申请日：1992-01-21
申请人： Akio Nakagawa , Yoshihiro Yamaguchi , Kiminori Watanabe
发明人： Akio Nakagawa , Yoshihiro Yamaguchi , Kiminori Watanabe
IPC分类号： H01L21/336 , H01L29/06 , H01L29/08 , H01L29/40 , H01L29/739 , H01L29/745
CPC分类号： H01L29/7455 , H01L29/0696 , H01L29/0834 , H01L29/402 , H01L29/405 , H01L29/7393 , H01L29/7395 , H01L29/7396 , H01L2924/0002
摘要： There is disclosed a single-gate type conductivity-modulation field effect transistor having a semiconductive substrate, a base layer, and a source layer formed in the base layer. A source electrode is provided on a surface of the substrate, for electrically shorting the base layer with the source layer. A drain layer is provided in the substrate surface. A drain electrode is formed on the substrate surface to be in contact with the drain layer. A gate electrode is insulatively provided above the substrate surface, for covering a certain surface portion of the base layer which is positioned between the substrate and the source layer to define a channel region below the gate electrode. A lightly doped semiconductor diffusion layer is formed in the substrate surface so as to overlap said base layer and said drain layer. The diffusion layer having an impurity density which is varied continuously through the thickness of the diffusion layer.
摘要翻译：公开了具有形成在基底层中的半导体基底，基底层和源极层的单栅极型导电调制场效应晶体管。源电极设置在基板的表面上，用于使源层与源层电短路。漏极层设置在衬底表面中。漏极电极形成在衬底表面上以与漏层接触。栅极电极被绝缘地设置在衬底表面上方，用于覆盖位于衬底和源极层之间的基底层的特定表面部分，以限定栅电极下方的沟道区。在衬底表面中形成轻掺杂的半导体扩散层，以便与所述基底层和所述漏极层重叠。扩散层的杂质密度通过扩散层的厚度连续变化。

70. 发明授权

US5168333A Conductivity-modulation metal oxide semiconductor field effect transistor 失效
标题翻译：电导率调制金属氧化物半导体场效应晶体管
公开(公告)号：US5168333A
公开(公告)日：1992-12-01
申请号：US662517
申请日：1991-02-28
申请人： Akio Nakagawa , Yoshihiro Yamaguchi , Kiminori Watanabe
发明人： Akio Nakagawa , Yoshihiro Yamaguchi , Kiminori Watanabe
IPC分类号： H01L29/06 , H01L29/08 , H01L29/40 , H01L29/739 , H01L29/745
CPC分类号： H01L29/405 , H01L29/0696 , H01L29/0834 , H01L29/402 , H01L29/7393 , H01L29/7395 , H01L29/7396 , H01L29/7455
摘要： A semiconductor device including a semiconductive substrate having first and second opposite surfaces; a thyristor formed on the substrate and including a base layer formed in the first surface of the substrate, a first emitter layer formed in the base layer, a conductive layer electrically connected to the emitter layer to serve as a cathode electrode, a first gate electrode connected to the base layer, a second emitter layer formed in the second surface of the substrate, a drain layer formed in the second emitter layer, a conductive layer for electrically connecting the second emitter layer with said drain layer and for serving as an anode electrode of said thyristor. A metal oxide semiconductor field effect transistor is provided to accelerate the flow of carriers in said thyristor to the anode electrode to turn off said thyristor. The metal oxide semiconductor field effect transistor has a conductive layer serving as a second gate electrode insulatively disposed above the second surface to cover a layer portion of the second emitter layer which is defined between the substrate and the drain layer.
摘要翻译：一种半导体器件，包括具有第一和第二相对表面的半导体衬底; 形成在基板上的晶闸管，包括形成在基板的第一表面中的基底层，在基底层中形成的第一发射极层，与发射极层电连接以用作阴极的导电层，第一栅电极连接到基极层，形成在基板的第二表面中的第二发射极层，形成在第二发射极层中的漏极层，用于将第二发射极层与所述漏极层电连接并用作阳极电极的导电层的晶闸管。提供金属氧化物半导体场效应晶体管，以加速所述晶闸管中的载流子流向阳极电极，以使所述晶闸管截止。金属氧化物半导体场效应晶体管具有绝缘地设置在第二表面之上的第二栅电极的导电层，以覆盖限定在衬底和漏层之间的第二发射极层的层部分。

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