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61. 发明申请

US20110089414A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20110089414A1
公开(公告)日：2011-04-21
申请号：US12904565
申请日：2010-10-14
申请人： Shunpei Yamazaki , Jun Koyama , Hiroyuki Miyake , Kei Takahashi , Kouhei Toyotaka , Masashi Tsubuku , Kosei Noda , Hideaki Kuwabara
发明人： Shunpei Yamazaki , Jun Koyama , Hiroyuki Miyake , Kei Takahashi , Kouhei Toyotaka , Masashi Tsubuku , Kosei Noda , Hideaki Kuwabara
IPC分类号： H01L29/12
CPC分类号： H01L29/26 , G06K19/07758 , G11C7/00 , G11C19/28 , H01L21/8236 , H01L23/66 , H01L27/0883 , H01L27/1225 , H01L29/24 , H01L29/66969 , H01L29/78609 , H01L29/7869 , H01L29/78696 , H01L2223/6677 , H02M3/07
摘要： An object is to reduce leakage current and parasitic capacitance of a transistor used for an LSI, a CPU, or a memory. A semiconductor integrated circuit such as an LSI, a CPU, or a memory is manufactured using a thin film transistor in which a channel formation region is formed using an oxide semiconductor which becomes an intrinsic or substantially intrinsic semiconductor by removing impurities which serve as electron donors (donors) from the oxide semiconductor and has larger energy gap than that of a silicon semiconductor. With use of a thin film transistor using a highly purified oxide semiconductor layer with sufficiently reduced hydrogen concentration, a semiconductor device with low power consumption due to leakage current can be realized.
摘要翻译：目的是减少用于LSI，CPU或存储器的晶体管的泄漏电流和寄生电容。使用薄膜晶体管制造诸如LSI，CPU或存储器的半导体集成电路，其中使用氧化物半导体形成沟道形成区域，该氧化物半导体通过去除作为电子给体的杂质而成为本征或本质上的半导体（供体），并且具有比硅半导体更大的能隙。通过使用具有充分降低的氢浓度的高度净化的氧化物半导体层的薄膜晶体管，可以实现由于漏电流而具有低功耗的半导体器件。

62. 发明申请

US20110068852A1 SEMICONDUCTOR DEVICE, POWER CIRCUIT, AND MANUFACTURING MKETHOD OF SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件，电源电路和半导体器件制造商
公开(公告)号：US20110068852A1
公开(公告)日：2011-03-24
申请号：US12888064
申请日：2010-09-22
申请人： Shunpei Yamazaki , Kei Takahashi , Yoshiaki Ito
发明人： Shunpei Yamazaki , Kei Takahashi , Yoshiaki Ito
IPC分类号： G05F1/10 , H01L29/26 , H01L21/20
CPC分类号： H01L29/7869 , H01L21/0237 , H01L21/02554 , H01L21/02565 , H01L29/04 , H01L29/24 , H01L29/41733 , H01L29/42384 , H01L29/66969
摘要： The semiconductor device includes a first conductive layer over a substrate; an oxide semiconductor layer which covers the first conductive layer; a second conductive layer in a region which is not overlapped with the first conductive layer over the oxide semiconductor layer; an insulating layer which covers the oxide semiconductor layer and the second conductive layer; and a third conductive layer in a region including at least a region which is not overlapped with the first conductive layer or the second conductive layer over the insulating layer.
摘要翻译：半导体器件包括在衬底上的第一导电层; 覆盖所述第一导电层的氧化物半导体层; 在与所述氧化物半导体层上的所述第一导电层不重叠的区域中的第二导电层; 覆盖氧化物半导体层和第二导电层的绝缘层; 以及在绝缘层上至少包括不与第一导电层或第二导电层重叠的区域的区域中的第三导电层。

63. 发明授权

US07884788B2 Liquid crystal display device and electronic apparatus 有权
标题翻译：液晶显示装置及电子装置
公开(公告)号：US07884788B2
公开(公告)日：2011-02-08
申请号：US10902793
申请日：2004-08-02
申请人： Kazuhiko Miyata , Jun Koyama , Hiroyuki Miyake , Kei Takahashi
发明人： Kazuhiko Miyata , Jun Koyama , Hiroyuki Miyake , Kei Takahashi
IPC分类号： G09G3/36
CPC分类号： G09G3/3685 , G09G2310/027
摘要： A liquid crystal display device provided with an audio signal processing function, which includes an audio signal processing circuit with a large S/N ratio and a small glitch is provided. The display device of the invention includes a resistor string D/A converter circuit whose dynamic range can be increased by using a common power supply for a D/A converter circuit and a signal line driver circuit. Accordingly, a glitch generated in the D/A converter circuit can be reduced relatively to an audio signal and an S/N ratio of the D/A converted signal can thus be increased.
摘要翻译：提供具有音频信号处理功能的液晶显示装置，其包括具有大的S / N比和小毛刺的音频信号处理电路。本发明的显示装置包括电阻串D / A转换电路，其动态范围可以通过使用用于D / A转换器电路和信号线驱动电路的公共电源来增加。因此，可以相对于音频信号减小在D / A转换器电路中产生的毛刺，从而可以增加D / A转换信号的S / N比。

64. 发明授权

US07851804B2 Display device 有权
标题翻译：显示设备
公开(公告)号：US07851804B2
公开(公告)日：2010-12-14
申请号：US12054949
申请日：2008-03-25
申请人： Kei Takahashi
发明人： Kei Takahashi
IPC分类号： H01L27/14
CPC分类号： H01L27/1266 , G09G3/3233 , G09G3/3291 , G09G2300/0842 , G09G2320/029 , H01L27/1214 , H01L27/3244 , H01L29/66772
摘要： A single-crystal semiconductor layer which is separated from a single-crystal semiconductor substrate, and bonded to and provided over a supporting substrate is used, whereby a transistor having uniform characteristics can be formed. A reference circuit having a bipolar transistor is provided, whereby temperature dependence of a driving transistor which is driven by supplying current to the light-emitting element of a pixel is compensated.
摘要翻译：使用与单晶半导体基板分离并结合并设置在支撑基板上的单晶半导体层，由此可以形成具有均匀特性的晶体管。提供了具有双极晶体管的参考电路，由此补偿通过向像素的发光元件提供电流驱动的驱动晶体管的温度依赖性。

65. 发明授权

US07635863B2 Display device and electronic apparatus having the display device 有权
标题翻译：具有显示装置的显示装置和电子装置
公开(公告)号：US07635863B2
公开(公告)日：2009-12-22
申请号：US11548079
申请日：2006-10-10
申请人： Shunpei Yamazaki , Mitsuaki Osame , Tomoyuki Iwabuchi , Kei Takahashi , Ryo Nozawa , Mizuki Sato , Ryota Fukumoto
发明人： Shunpei Yamazaki , Mitsuaki Osame , Tomoyuki Iwabuchi , Kei Takahashi , Ryo Nozawa , Mizuki Sato , Ryota Fukumoto
IPC分类号： H01L27/15
CPC分类号： G02F1/0123 , G02F2001/134345 , G02F2201/58 , G09G3/3275 , G09G2320/029 , G09G2320/041 , G09G2320/043 , H01L27/3269
摘要： A light-emitting element has a property that a resistance value (internal resistance) changes in accordance with an environmental temperature. It is an object to downsize a monitoring element which corrects an influence of variations in current value of the light-emitting element, which are caused by an environmental temperature change and a change with time. A pixel includes a plurality of sub-pixels, areas of light-emitting elements provided in the individual sub-pixels are made to be different from each other, and an area of a monitoring element is made to be the same as an area of the light-emitting element in any of the sub-pixels, thereby correcting light-emission of the pixel by the monitoring element.
摘要翻译：发光元件具有电阻值（内部电阻）根据环境温度而变化的性质。本发明的目的是减小由环境温度变化和随时间变化引起的发光元件的电流值的变化的影响的监视元件的小型化。像素包括多个子像素，将设置在各个子像素中的发光元件的区域彼此不同，并且将监视元件的区域设置为与任何子像素中的发光元件，从而通过监视元件校正像素的发光。

66. 发明申请

US20090159890A1 Semiconductor Display Device 有权
标题翻译：半导体显示设备
公开(公告)号：US20090159890A1
公开(公告)日：2009-06-25
申请号：US12336996
申请日：2008-12-17
申请人： Shunpei Yamazaki , Jun Koyama , Yoshifumi Tanada , Hiroyuki Miyake , Kei Takahashi
发明人： Shunpei Yamazaki , Jun Koyama , Yoshifumi Tanada , Hiroyuki Miyake , Kei Takahashi
IPC分类号： H01L33/00
CPC分类号： H01L27/3276 , H01L27/124 , H01L27/1266
摘要： A semiconductor display device using a light-emitting element, which can suppress luminance unevenness among pixels due to the potential drop of a wiring, is provided. Power supply lines to which a power supply potential is supplied are electrically connected to each other in a display region where a plurality of pixels are arranged. Further, an interlayer insulating film is formed over a wiring (an auxiliary power supply line) for electrically connecting the power supply lines to each other in the display region and a gate electrode of a transistor included in a pixel; and the power supply lines are formed over the interlayer insulating film which is formed over the auxiliary power supply line and the gate electrode. Furthermore, a wiring (an auxiliary wiring) formed over the interlayer insulating film is electrically or directly connected to the auxiliary power supply line.
摘要翻译：提供一种使用能够抑制由于布线的电位下降引起的像素之间的亮度不均匀的发光元件的半导体显示装置。供给电源电位的电源线在布置有多个像素的显示区域中彼此电连接。此外，在用于将显示区域中的电源线彼此电连接并且包括在像素中的晶体管的栅电极的布线（辅助电源线）上形成层间绝缘膜; 并且在辅助电源线和栅电极之间形成的层间绝缘膜上形成电源线。此外，形成在层间绝缘膜上的布线（辅助布线）与辅助电源线电连接或直接连接。

67. 外观设计

USD559205S1 Programmable logic controller 有权
标题翻译：可编程逻辑控制器
公开(公告)号：USD559205S1
公开(公告)日：2008-01-08
申请号：US29257910
申请日：2006-04-13
申请人： Kei Takahashi , Heita Nada
设计人： Kei Takahashi , Heita Nada

68. 发明申请

US20050260710A1 Methods for producing recombinant polyclonal immunoglobulins 审中-公开
标题翻译：重组多克隆免疫球蛋白的制备方法
公开(公告)号：US20050260710A1
公开(公告)日：2005-11-24
申请号：US11092988
申请日：2005-03-30
申请人： Kazuo Suzuki , Masahiro Furutani , Kenji Yamamoto , Naohito Ohno , Kei Takahashi , Yasuaki Aratani , Akiko Togi
发明人： Kazuo Suzuki , Masahiro Furutani , Kenji Yamamoto , Naohito Ohno , Kei Takahashi , Yasuaki Aratani , Akiko Togi
IPC分类号： C07K16/00 , C07K16/44 , C12N1/21 , C12N15/74 , C12P21/06
CPC分类号： C07K16/00 , A61K2039/505 , C07K2317/52 , C07K2317/622 , C07K2319/00
摘要： The purpose of the present invention is to provide methods for producing recombinant polyclonal immunoglobulins using recombinant DNA techniques, which provides constant supply of immunoglobulin preparations with minimum risk of infection. A method of the present invention comprises the following steps: (1) isolating a plurality of types of genes from cDNAs derived from tissues or cells expressing immunoglobulins, said genes encoding a plurality of types of polypeptides respectively, and said polypeptides containing a plurality of types of immunoglobulin variable regions respectively, and preparing mixture of the genes; (2) preparing a plurality of types of recombinant vectors into which a plurality of types of genes are introduced respectively by contacting said mixture of the genes with vectors, and preparing mixture of the recombinant vectors; (3) preparing a plurality of types of transformants into which a plurality of types of recombinant vectors are introduced respectively by contacting said mixture of the recombinant vectors with host cells, and preparing mixture of the transformants; and (4) culturing said mixture of the transformants, and obtaining mixture of polypeptides from the transformants culture, wherein said polypeptides contain a plurality of types of immunoglobulin variable regions respectively.
摘要翻译：本发明的目的是提供使用重组DNA技术制备重组多克隆免疫球蛋白的方法，其提供具有最小感染风险的免疫球蛋白制剂的恒定供应。本发明的方法包括以下步骤：（1）从衍生自表达免疫球蛋白的组织或细胞的cDNA分离多种类型的基因，所述基因分别编码多种类型的多肽，所述多肽含有多种类型的免疫球蛋白可变区，并制备基因的混合物; （2）通过将所述基因混合物与载体接触，制备多种类型的重组载体，其中分别导入多种类型的基因，并制备重组载体的混合物; （3）通过使重组载体的混合物与宿主细胞接触，制备分别引入多种类型的重组载体的多种类型的转化体，并制备转化体的混合物; （4）培养所述转化体的所述混合物，并从所述转化体培养物获得多肽的混合物，其中所述多肽分别含有多种类型的免疫球蛋白可变区。

69. 发明授权

US5878807A Fluid channeling unit 失效
标题翻译：流体通道单元
公开(公告)号：US5878807A
公开(公告)日：1999-03-09
申请号：US799789
申请日：1997-02-12
申请人： Kei Takahashi
发明人： Kei Takahashi
IPC分类号： F28F3/08 , F24S10/50 , F28D1/02 , F28D1/03 , F28D9/00 , F28D20/00 , F28F21/06 , F28F27/02 , F24J2/36
CPC分类号： F24J2/202 , F28D1/0213 , F28D1/0366 , F28D20/0052 , F28F21/065 , F28F27/02 , Y02E10/44 , Y02E60/142
摘要： A flow controllable unit includes a pair of spaced upper and lower sheets. A plurality of elongated partitions are sandwiched between the upper and lower sheets to define a plurality of fluid passages. The partitions have an intermediate region and opposite lateral sides. The partitions are secured to the upper and lower sheets so that the intermediate region is movable relative to the upper and lower sheets. When a pressure increase occurs within the passages, the intermediate region of the partitions is bent or deformed to allow the upper and lower sheets to be moved away from each other. This movement increases the effective cross sectional area of the passages to accommodate such a pressure increase. The partitions thus provide a pressure relief function.
摘要翻译：流量可控单元包括一对间隔的上和下片。多个细长分隔件被夹在上部和下部片材之间以限定多个流体通道。隔板具有中间区域和相对的侧边。分隔件被固定到上下板，使得中间区域相对于上板和下板可移动。当在通道内发生压力增加时，隔板的中间区域被弯曲或变形，以允许上部和下部片材彼此远离。该运动增加了通道的有效横截面面积以适应这种压力增加。因此，隔板提供了压力释放功能。

70. 发明授权

US09214587B2 Photoelectric conversion module and manufacturing method thereof 有权
标题翻译：光电转换模块及其制造方法
公开(公告)号：US09214587B2
公开(公告)日：2015-12-15
申请号：US13212395
申请日：2011-08-18
申请人： Kazuo Nishi , Yasushi Maeda , Ryosuke Motoyoshi , Yuji Oda , Kei Takahashi , Yoshiaki Ito , Tatsuji Nishijima
发明人： Kazuo Nishi , Yasushi Maeda , Ryosuke Motoyoshi , Yuji Oda , Kei Takahashi , Yoshiaki Ito , Tatsuji Nishijima
IPC分类号： H01L31/0224 , H01L31/075 , H01L31/02 , H01L31/05 , H01L31/046
CPC分类号： H01L31/075 , H01L31/02008 , H01L31/046 , H01L31/0504 , Y02E10/548
摘要： A photoelectric conversion module in which an output voltage defect is suppressed is obtained by forming in parallel over a substrate n number (n is a natural number) of integrated photoelectric conversion devices each including a plurality of cells that are connected in series, and electrically connecting in parallel n−1 number or less of integrated photoelectric conversion devices with normal electrical characteristics and excluding an integrated photoelectric conversion device with a characteristic defect such as a short-circuit between top and bottom electrodes or a leak current due to a structural defect or the like formed in a semiconductor layer or the like.
摘要翻译：通过在基板上平行地形成n个（n为自然数）的集成光电转换装置，其中包含多个串联连接的单元，并且电连接，得到抑制输出电压缺陷的光电转换模块并联n-1个或更少的具有正常电特性的集成光电转换装置，并且不包括具有诸如顶部和底部电极之间的短路的特性缺陷或由于结构缺陷引起的漏电流的集成光电转换装置如在半导体层等中形成的。

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