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    • 69. 发明申请
    • NON-VOLATILE MEMORY DEVICE, OPERATION METHOD THEREOF, AND DEVICES HAVING THE NON-VOLATILE MEMORY DEVICE
    • 非易失性存储器件,其操作方法和具有非易失性存储器件的器件
    • US20110249495A1
    • 2011-10-13
    • US13071727
    • 2011-03-25
    • Kyoung Lae ChoHyuck-Sun KwonJun Jin Kong
    • Kyoung Lae ChoHyuck-Sun KwonJun Jin Kong
    • G11C16/04
    • G11C11/5628G11C16/3454
    • A non-volatile memory device is provided. The non-volatile memory device includes a memory cell array including a plurality of multi-level cells each storing data corresponding to one of a plurality of states of a first group of states, and a control circuit. The control circuit configured to program data corresponding to one of the plurality of states in a first multi-level cell according to a first verify voltage level of a first group of verify voltage levels, and to control the first multi-level cell to be re-programmed to one of a plurality of states of a second group of states according to a first verify voltage level of a second group of verify voltage levels. Each voltage level of the second group of verify voltage levels has a higher level than the verify voltage levels of the first group of verify voltage levels. One of the plurality of states of the second group of states includes at least one of the plurality of states of the first group of states.
    • 提供了一种非易失性存储器件。 非易失性存储器件包括存储单元阵列,其包括多个多电平单元,每个多电平单元存储与第一组状态的多个状态中的一个对应的数据,以及控制电路。 控制电路被配置为根据第一组验证电压电平的第一验证电压电平对第一多电平单元中的多个状态中的一个状态进行编程的数据,并且控制第一多电平单元被重新 根据第二验证电压电平组的第一验证电压电平编程为第二组状态的多个状态中的一个状态。 第二组验证电压电平的每个电压电平具有比第一组验证电压电平的验证电压电平更高的电平。 第二组状态的多个状态之一包括第一组状态的多个状态中的至少一个状态。