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61. 发明申请

US20090306906A1 METHOD AND SYSTEM FOR SPECTROSCOPIC DATA ANALYSIS 有权
标题翻译：用于光谱数据分析的方法和系统
公开(公告)号：US20090306906A1
公开(公告)日：2009-12-10
申请号：US12368176
申请日：2009-02-09
申请人： Paul Gottlieb , Michael Barnes , Brian William Bourke
发明人： Paul Gottlieb , Michael Barnes , Brian William Bourke
IPC分类号： G01N31/00 , G01N23/00
CPC分类号： G01N23/2206 , G01N23/2252 , H01J2237/2561
摘要： A method of analyzing spectroscopic data, the method comprising collecting spatially resolved measurement spectroscopic data of a sample for a series of measurements spots, assigning the measurement spots into a predefined set of spectral categories, based on characteristics of the spectroscopic data of the respective measurement spots, identifying groupings of the measurement spots based on their respective spectral categories and their spatial relationships, and assigning each grouping of measurement spots to a fundamental sample unit data object.
摘要翻译：一种分析光谱数据的方法，所述方法包括：基于各个测量点的光谱数据的特性，将用于一系列测量点的样本的空间分辨的测量光谱数据收集到预定义的光谱类别组中基于它们各自的光谱类别及其空间关系来识别测量点的分组，以及将每个测量点分组分配给基本采样单元数据对象。

62. 发明授权

US07524735B1 Flowable film dielectric gap fill process 有权
标题翻译：可流动薄膜电介质间隙填充工艺
公开(公告)号：US07524735B1
公开(公告)日：2009-04-28
申请号：US11447594
申请日：2006-06-05
申请人： Vishal Gauri , Raashina Humayun , Chi-I Lang , Judy H. Huang , Michael Barnes , Sunil Shanker
发明人： Vishal Gauri , Raashina Humayun , Chi-I Lang , Judy H. Huang , Michael Barnes , Sunil Shanker
IPC分类号： H01L21/762
CPC分类号： H01L21/31 , C23C16/045 , C23C16/401 , C23C16/56 , H01L21/02164 , H01L21/02271 , H01L21/0234 , H01L21/3121 , H01L21/3122 , H01L21/31608 , H01L21/76224
摘要： Methods of this invention relate to filling gaps on substrates with a solid dielectric material by forming a flowable film in the gap. The flowable film provides consistent, void-free gap fill. The film is then converted to a solid dielectric material. In this manner gaps on the substrate are filled with a solid dielectric material. According to various embodiments, the methods involve reacting a dielectric precursor with an oxidant to form the dielectric material. In certain embodiments, the dielectric precursor condenses and subsequently reacts with the oxidant to form dielectric material. In certain embodiments, vapor phase reactants react to form a condensed flowable film.
摘要翻译：本发明的方法涉及通过在间隙中形成可流动的膜来填充具有固体电介质材料的衬底上的间隙。可流动膜提供一致的，无空隙的间隙填充。然后将膜转化成固体电介质材料。以这种方式，用固体电介质材料填充衬底上的间隙。根据各种实施方案，所述方法包括使电介质前体与氧化剂反应以形成电介质材料。在某些实施方案中，电介质前体冷凝并随后与氧化剂反应以形成电介质材料。在某些实施方案中，气相反应物反应形成冷凝的可流动的膜。

63. 发明申请

US20050191846A1 Plasma processes for depositing low dielectric constant films 有权
公开(公告)号：US20050191846A1
公开(公告)日：2005-09-01
申请号：US11087393
申请日：2005-03-22
申请人： David Cheung , Wai-Fan Yau , Robert Mandal , Shin-Puu Jeng , Kuo-Wei Liu , Yung-Cheng Lu , Michael Barnes , Ralf Willecke , Farhad Moghadam , Tetsuya Ishikawa , Tze Poon
发明人： David Cheung , Wai-Fan Yau , Robert Mandal , Shin-Puu Jeng , Kuo-Wei Liu , Yung-Cheng Lu , Michael Barnes , Ralf Willecke , Farhad Moghadam , Tetsuya Ishikawa , Tze Poon
IPC分类号： C23C16/40 , H01L21/316 , H01L21/768 , H01L21/4763 , H01L21/31 , H01L21/469
CPC分类号： H01L21/76835 , C23C16/401 , H01L21/02126 , H01L21/02203 , H01L21/02208 , H01L21/02274 , H01L21/0228 , H01L21/02304 , H01L21/02362 , H01L21/31612 , H01L21/76801 , H01L21/76808 , H01L21/7681 , H01L21/76829 , H01L21/76832 , H01L21/76834 , H01L2221/1031 , Y10T428/24926 , Y10T428/31663
摘要： A method and apparatus for depositing a low dielectric constant film by reaction of an organosilicon compound and an oxidizing gas comprising carbon at a constant RF power level. Dissociation of the oxidizing gas can be increased prior to mixing with the organosilicon compound, preferably within a separate microwave chamber, to assist in controlling the carbon content of the deposited film. The oxidized organosilane or organosiloxane film has good barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organosilane or organosiloxane film may also be used as an etch stop and an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organosilane or organosiloxane films also provide excellent adhesion between different dielectric layers.

64. 发明申请

US20050177507A1 Method and system for processing transactions 有权
标题翻译：处理交易的方法和系统
公开(公告)号：US20050177507A1
公开(公告)日：2005-08-11
申请号：US11028489
申请日：2004-12-30
申请人： David Bandych , John Marron , Mark Hoffmeyer , Michael Barnes , Tim Dawson , Paul Hanson
发明人： David Bandych , John Marron , Mark Hoffmeyer , Michael Barnes , Tim Dawson , Paul Hanson
IPC分类号： G06F17/60
CPC分类号： G06Q20/10 , G06Q20/102
摘要： A system and method is provided for processing transactions between at least one buying company and at least one selling company which results in the creation of a new collaborative data set. In one embodiment, the method comprises providing a central datastore accessible to users from the buying company and users from the selling company. Purchase order and invoice data are obtained and compared via a computer, to identify a matched record having purchase order data and corresponding invoice data. A collaborative data set in the central datastore is created, based in part on the matched record and storing in the datastore detailed settlement data regarding settlement of the matched record of purchase order data and corresponding invoice data. The method stores a complete settlement transaction history by providing for storage of additional settlement data in the central datastore, wherein credit memos, debit memos regarding the invoice, the purchase order of the matched record, and/or other documents related to the transaction are stored as part of the collaborative data set.
摘要翻译：提供了一种用于处理至少一个购买公司和至少一个销售公司之间的交易的系统和方法，其导致创建新的协作数据集。在一个实施例中，该方法包括提供来自购买公司的用户和销售公司的用户可访问的中央数据存储。通过计算机获得采购订单和发票数据并进行比较，以识别具有采购订单数据和相应发票数据的匹配记录。创建中央数据存储区中的协作数据集，部分基于匹配的记录，并存储数据存储区中关于结算采购订单数据和相应发票数据的匹配记录的详细结算数据。该方法通过提供在中央数据存储区中存储附加结算数据来存储完整的结算交易历史，其中存储有关发票的借记凭单，与该交易有关的匹配记录的采购订单和/或其他文件作为协作数据集的一部分。

65. 发明申请

US20050164244A1 Methods of determining juvenile arthritis classification 审中-公开
标题翻译：确定青少年关节炎分类的方法
公开(公告)号：US20050164244A1
公开(公告)日：2005-07-28
申请号：US10970698
申请日：2004-10-21
申请人： David Glass , Michael Barnes , Susan Thompson
发明人： David Glass , Michael Barnes , Susan Thompson
IPC分类号： C12Q1/68
CPC分类号： C12Q1/6883 , C12Q2600/112 , C12Q2600/158
摘要： The present application is directed to a method of determining disease classification, particular of juvenile arthritis. It is also directed to a method of analyzing disease progression in a subject exhibiting juvenile arthritis. The invention pertains to expression patterns of certain inflammatory related nucleotide sequences that differ among the various classifications of juvenile arthritis such as, but not limited to, pauciarticular arthritis, polyarticular arthritis, juvenile onset spondyloarthropathy, and systemic onset juvenile rheumatoid arthritis.
摘要翻译：本申请涉及确定疾病分类的方法，特别是青少年关节炎。还涉及分析呈现少年关节炎的受试者的疾病进展的方法。本发明涉及在诸如但不限于关节炎关节炎，关节炎关节炎，青少年发作性脊椎关节病和全身性发作性幼年型类风湿性关节炎的各种分类中的各种不同分类之间的炎性相关核苷酸序列的表达模式。

66. 发明申请

US20050155854A1 Method and apparatus for abatement of reaction products from a vacuum processing chamber 失效
标题翻译：从真空处理室中减少反应产物的方法和装置
公开(公告)号：US20050155854A1
公开(公告)日：2005-07-21
申请号：US11017637
申请日：2004-12-22
申请人： Paul Shufflebotham , Michael Barnes
发明人： Paul Shufflebotham , Michael Barnes
IPC分类号： B01D53/70 , C23C16/44 , B01J19/08 , B01J19/12
CPC分类号： C23C16/4412 , B01D53/70 , B01D2257/2066 , B01D2259/818 , Y02C20/30
摘要： An exemplary method and apparatus for abating reaction products from a vacuum processing chamber includes a reaction chamber in fluid communication with the vacuum processing chamber, a coil disposed about the reaction chamber, and a power source for supplying RF energy to the coil. The coil creates a plasma in the reaction chamber which effectively breaks down stable reaction products from the vacuum processing chamber such as perfluorocarbons (PFCs) and hydrofluorocarbons (HFCs) which significantly contribute to global warming. According to alternative embodiments, the plasma may be generated with grids or coils disposed in the reaction chamber perpendicular to the flow of reaction products from the vacuum processing chamber.
摘要翻译：用于减轻来自真空处理室的反应产物的示例性方法和装置包括与真空处理室流体连通的反应室，围绕反应室设置的线圈以及用于向线圈供应RF能量的电源。线圈在反应室中产生等离子体，其有效地分解来自真空处理室的稳定反应产物，例如对全球变暖有显着贡献的全氟化碳（PFCs）和氢氟烃（HFCs）。根据替代实施例，等离子体可以通过设置在反应室中的格栅或线圈垂直于来自真空处理室的反应产物流而产生。

67. 发明授权

US06841006B2 Atmospheric substrate processing apparatus for depositing multiple layers on a substrate 失效
公开(公告)号：US06841006B2
公开(公告)日：2005-01-11
申请号：US09938399
申请日：2001-08-23
申请人： Michael Barnes , Michael S. Cox , Canfeng Lai , John Parks
发明人： Michael Barnes , Michael S. Cox , Canfeng Lai , John Parks
IPC分类号： C23C16/54 , C30B25/08 , H01L21/00 , C23C16/00 , B65G49/07 , C23F1/00
CPC分类号： H01L21/67167 , C23C16/54 , C30B25/08 , H01L21/67184 , Y10S414/139
摘要： A substrate processing apparatus is disclosed. In one embodiment, the apparatus includes a first atmospheric deposition station and a second atmospheric deposition station. The second atmospheric deposition station comprises an atmospheric pressure vapor deposition chamber. A substrate handling system is adapted to transfer substrates between the first and the second atmospheric deposition stations.

68. 发明授权

US06694915B1 Plasma reactor having a symmetrical parallel conductor coil antenna 有权
标题翻译：具有对称并联导体线圈天线的等离子体反应器
公开(公告)号：US06694915B1
公开(公告)日：2004-02-24
申请号：US09611170
申请日：2000-07-06
申请人： John Holland , Valentin N. Todorow , Michael Barnes
发明人： John Holland , Valentin N. Todorow , Michael Barnes
IPC分类号： C23C16507
CPC分类号： H01J37/321
摘要： The invention in one embodiment is realized in a plasma reactor for processing a semiconductor workpiece. The reactor includes a vacuum chamber having a side wall and a ceiling, a workpiece support pedestal within the chamber and generally facing the ceiling, a gas inlet capable of supplying a process gas into the chamber and a solenoidal interleaved parallel conductor coil antenna overlying the ceiling and including a first plurality conductors wound about an axis of symmetry generally perpendicular to the ceiling in respective concentric helical solenoids of at least nearly uniform lateral displacements from the axis of symmetry, each helical solenoid being offset from the other helical solenoids in a direction parallel to the axis of symmetry. A RF plasma source power supply is connected across each of the plural conductors.
摘要翻译：在一个实施例中的本发明在用于处理半导体工件的等离子体反应器中实现。反应器包括具有侧壁和天花板的真空室，腔室内的工件支撑基座，并且大致面对天花板，能够将工艺气体供应到室中的气体入口和覆盖在天花板上的螺线管交错的并行导体线圈天线并且包括缠绕在大致垂直于天花板的相应同心螺旋螺线管中的对称轴线的第一多个导体，其具有来自对称轴线的至少几乎均匀的横向位移，每个螺旋螺线管在与另一个螺旋螺线管平行的方向上偏离对称轴。 RF等离子体源电源连接在多个导体中的每一个上。

69. 发明授权

US06583071B1 Ultrasonic spray coating of liquid precursor for low K dielectric coatings 失效
标题翻译：用于低K电介质涂层的液体前体的超声波喷涂
公开(公告)号：US06583071B1
公开(公告)日：2003-06-24
申请号：US09692660
申请日：2000-10-18
申请人： Timothy Weidman , Yunfeng Lu , Michael P Nault , Michael Barnes , Farhad Moghadam
发明人： Timothy Weidman , Yunfeng Lu , Michael P Nault , Michael Barnes , Farhad Moghadam
IPC分类号： H01L2131
CPC分类号： H01L21/3122 , C23C16/30 , C23C16/325 , C23C16/401 , C23C16/4486 , H01L21/02126 , H01L21/02167 , H01L21/022 , H01L21/02203 , H01L21/02211 , H01L21/02274 , H01L21/02282 , H01L21/312 , H01L21/3124 , H01L21/3125 , H01L21/31633 , H01L21/31695 , H01L21/76801 , H01L21/76828 , H01L21/76834
摘要： A process for forming a extremely low dielectric constant film over a substrate. The process includes coating a substrate with a solution comprising a soluble source of silicon oxide, water, a solvent, a surfactant and a catalyst using an ultrasonic spray nozzle. The coated substrate is then subsequently treated to harden the solution into an extremely low dielectric constant film.
摘要翻译：一种在衬底上形成极低介电常数膜的方法。该方法包括使用超声波喷嘴将包含可溶性氧化硅源，水，溶剂，表面活性剂和催化剂的溶液涂覆在基材上。然后将涂覆的基底随后处理以将溶液硬化成极低介电常数的膜。

70. 发明授权

US06562690B1 Plasma processes for depositing low dielectric constant films 失效
标题翻译：用于沉积低介电常数膜的等离子体工艺
公开(公告)号：US06562690B1
公开(公告)日：2003-05-13
申请号：US09594186
申请日：2000-06-13
申请人： David Cheung , Wai-Fan Yau , Robert P. Mandal , Shin-Puu Jeng , Kuo-Wei Liu , Yung-Cheng Lu , Michael Barnes , Ralf B. Willecke , Farhad Moghadam , Tetsuya Ishikawa , Tze Wing Poon
发明人： David Cheung , Wai-Fan Yau , Robert P. Mandal , Shin-Puu Jeng , Kuo-Wei Liu , Yung-Cheng Lu , Michael Barnes , Ralf B. Willecke , Farhad Moghadam , Tetsuya Ishikawa , Tze Wing Poon
IPC分类号： H01L2176
CPC分类号： H01L21/76835 , C23C16/401 , H01L21/02126 , H01L21/02203 , H01L21/02208 , H01L21/02274 , H01L21/0228 , H01L21/02304 , H01L21/02362 , H01L21/31612 , H01L21/76801 , H01L21/76808 , H01L21/7681 , H01L21/76829 , H01L21/76832 , H01L21/76834 , H01L2221/1031 , Y10T428/24926 , Y10T428/31663
摘要： A method and apparatus for depositing a low dielectric constant film by reaction of an organosilicon compound and an oxidizing gas at a constant RF power level from about 10W to about 200W or a pulsed RF power level from about 20W to about 500W. Dissociation of the oxidizing gas can be increased prior to mixing with the organosilicon compound, preferably within a separate microwave chamber, to assist in controlling the carbon content of the deposited film. The oxidized organosilane or organosiloxane film has good barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organosilane or organosiloxane film may also be used as an etch stop and an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organosilane or organosiloxane films also provide excellent adhesion between different dielectric layers. A preferred oxidized organosilane film is produced by reaction of methylsilane, CH3SiH3, or dimethylsilane, (CH3)2SiH2, and nitrous oxide, N2O, at a constant RF power level from about 10W to about 150W, or a pulsed RF power level from about 20W to about 250W during 10% to 30% of the duty cycle.
摘要翻译：一种用于通过有机硅化合物和氧化性气体以约10W至约200W的恒定RF功率水平的反应沉积低介电常数膜的方法和装置或约20W至约500W的脉冲RF功率水平。在与有机硅化合物混合之前，优选在单独的微波室内可以提高氧化气体的离解，以帮助控制沉积膜的碳含量。氧化的有机硅烷或有机硅氧烷膜具有良好的屏障性能，用作邻近其它介电层的衬垫层或盖层。氧化的有机硅烷或有机硅氧烷膜也可以用作蚀刻停止层和用于制造双镶嵌结构的金属间介电层。氧化的有机硅烷或有机硅氧烷膜也在不同的介电层之间提供优异的粘附性。优选的氧化有机硅烷膜通过甲基硅烷，CH 3 SiH 3或二甲基硅烷，（CH 3）2 SiH 2和一氧化二氮，N 2 O以约10W至约150W的恒定RF功率水平或约20W的脉冲RF功率水平在占用周期的10％到30％的范围内达到约250W。

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