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1. 发明授权

US06583071B1 Ultrasonic spray coating of liquid precursor for low K dielectric coatings 失效
标题翻译：用于低K电介质涂层的液体前体的超声波喷涂
公开(公告)号：US06583071B1
公开(公告)日：2003-06-24
申请号：US09692660
申请日：2000-10-18
申请人： Timothy Weidman , Yunfeng Lu , Michael P Nault , Michael Barnes , Farhad Moghadam
发明人： Timothy Weidman , Yunfeng Lu , Michael P Nault , Michael Barnes , Farhad Moghadam
IPC分类号： H01L2131
CPC分类号： H01L21/3122 , C23C16/30 , C23C16/325 , C23C16/401 , C23C16/4486 , H01L21/02126 , H01L21/02167 , H01L21/022 , H01L21/02203 , H01L21/02211 , H01L21/02274 , H01L21/02282 , H01L21/312 , H01L21/3124 , H01L21/3125 , H01L21/31633 , H01L21/31695 , H01L21/76801 , H01L21/76828 , H01L21/76834
摘要： A process for forming a extremely low dielectric constant film over a substrate. The process includes coating a substrate with a solution comprising a soluble source of silicon oxide, water, a solvent, a surfactant and a catalyst using an ultrasonic spray nozzle. The coated substrate is then subsequently treated to harden the solution into an extremely low dielectric constant film.
摘要翻译：一种在衬底上形成极低介电常数膜的方法。该方法包括使用超声波喷嘴将包含可溶性氧化硅源，水，溶剂，表面活性剂和催化剂的溶液涂覆在基材上。然后将涂覆的基底随后处理以将溶液硬化成极低介电常数的膜。

2. 发明授权

US06190233B1 Method and apparatus for improving gap-fill capability using chemical and physical etchbacks 失效
标题翻译：使用化学和物理回蚀改善间隙填充能力的方法和装置
公开(公告)号：US06190233B1
公开(公告)日：2001-02-20
申请号：US09025965
申请日：1998-02-19
申请人： Soonil Hong , Choon Kun Ryu , Michael P. Nault , Kaushal K. Singh , Anthony Lam , Virendra V. S. Rana , Andrew Conners
发明人： Soonil Hong , Choon Kun Ryu , Michael P. Nault , Kaushal K. Singh , Anthony Lam , Virendra V. S. Rana , Andrew Conners
IPC分类号： B24C322
CPC分类号： H01L21/02131 , C23C16/56 , H01L21/02274 , H01L21/31051 , H01L21/31612 , H01L21/31629 , H01L21/76837
摘要： A method and an apparatus for depositing a dielectric layer to fill in a gap between adjacent metal lines. In preferred embodiments of the method, a first dielectric layer is deposited over the lines and subsequently etched using both chemical and physical etchback steps. After the etchback steps are completed, a second dielectric layer is deposited over the first dielectric layer to fill in the gap.
摘要翻译：一种用于沉积介电层以填充相邻金属线之间的间隙的方法和装置。在该方法的优选实施例中，第一电介质层沉积在线上并随后使用化学和物理回蚀步骤进行蚀刻。在回蚀步骤完成之后，第二介电层沉积在第一介电层上以填充间隙。

3. 发明授权

US07265062B2 Ionic additives for extreme low dielectric constant chemical formulations 失效
标题翻译：用于极低介电常数化学配方的离子添加剂
公开(公告)号：US07265062B2
公开(公告)日：2007-09-04
申请号：US10636517
申请日：2003-08-07
申请人： Robert P. Mandal , Alexandros T. Demos , Timothy Weidman , Michael P. Nault , Nikolaos Bekiaris , Scott Jeffrey Weigel , Lee A. Senecal , James E. Mac Dougall , Hareesh Thridandam
发明人： Robert P. Mandal , Alexandros T. Demos , Timothy Weidman , Michael P. Nault , Nikolaos Bekiaris , Scott Jeffrey Weigel , Lee A. Senecal , James E. Mac Dougall , Hareesh Thridandam
IPC分类号： H01L21/31
CPC分类号： H01L21/02126 , C01B33/16 , H01L21/02203 , H01L21/02216 , H01L21/02282 , H01L21/31695
摘要： A process for depositing porous silicon oxide-based films using a sol-gel approach utilizing a precursor solution formulation which includes a purified nonionic surfactant and an additive among other components, where the additive is either an ionic additive or an amine additive which forms an ionic ammonium type salt in the acidic precursor solution. Using this precursor solution formulation enables formation of a film having a dielectric constant less than 2.5, appropriate mechanical properties, and minimal levels of alkali metal impurities. In one embodiment, this is achieved by purifying the surfactant and adding ionic or amine additives such as tetraalkylammonium salts and amines to the stock precursor solution.
摘要翻译：一种使用溶胶 - 凝胶方法沉积多孔氧化硅基膜的方法，该方法使用前体溶液制剂，其包含纯化的非离子表面活性剂和其它组分中的添加剂，其中添加剂是形成离子的离子添加剂或胺添加剂铵型盐在酸性前体溶液中。使用这种前体溶液制剂可以形成介电常数小于2.5，适当的机械性能和最低水平的碱金属杂质的薄膜。在一个实施方案中，这通过纯化表面活性剂并将离子或胺添加剂例如四烷基铵盐和胺添加到原料前体溶液中来实现。

4. 发明授权

US06896955B2 Ionic additives for extreme low dielectric constant chemical formulations 失效
标题翻译：用于极低介电常数化学配方的离子添加剂
公开(公告)号：US06896955B2
公开(公告)日：2005-05-24
申请号：US10219164
申请日：2002-08-13
申请人： Robert P. Mandal , Alexandros T. Demos , Timothy Weidman , Michael P. Nault , Nikolaos Bekiaris , Scott J. Weigel , Lee A. Senecal , James E. MacDougal , Hareesh Thridandam
发明人： Robert P. Mandal , Alexandros T. Demos , Timothy Weidman , Michael P. Nault , Nikolaos Bekiaris , Scott J. Weigel , Lee A. Senecal , James E. MacDougal , Hareesh Thridandam
IPC分类号： B05D5/12 , B05D7/24 , C01B33/16 , C09D5/25 , C09D183/02 , H01L21/20 , H01L21/314 , H01L21/316 , H01L21/768 , H01L23/522 , B32B3/00
CPC分类号： H01L21/02126 , C01B33/16 , H01L21/02203 , H01L21/02216 , H01L21/02282 , H01L21/31695 , Y10S438/96 , Y10T428/249953 , Y10T428/249969
摘要： A process for depositing porous silicon oxide-based films using a sol-gel approach utilizing a precursor solution formulation which includes a purified nonionic surfactant and an additive among other components, where the additive is either an ionic additive or an amine additive which forms an ionic ammonium type salt in the acidic precursor solution. Using this precursor solution formulation enables formation of a film having a dielectric constant less than 2.5, appropriate mechanical properties, and minimal levels of alkali metal impurities. In one embodiment, this is achieved by purifying the surfactant and adding ionic or amine additives such as tetraalkylammonium salts and amines to the stock precursor solution. In some embodiments, the ionic additive is a compound chosen from a group of cationic additives of the general composition [NR(CH3)3]+A−, where R is a hydrophobic ligand of chain length 1 to 24, including tetramethylammonium and cetyltrimethylammonium, and A− is an anion, which may be chosen from the group consisting essentially of formate, nitrate, oxalate, acetate, phosphate, carbonate, and hydroxide and combinations thereof. Tetramethylammonium salts, or more generally tetraalkylammonium salts, or tetraorganoammonium salts or organoamines in acidic media are added to surfactant templated porous oxide precursor formulations to increase the ionic content, replacing alkali ion impurities (sodium and potassium) removed during surfactant purification, but which are found to exhibit beneficial effects in promoting the formation of the resulting dielectric.
摘要翻译：一种使用溶胶 - 凝胶方法沉积多孔氧化硅基膜的方法，该方法使用前体溶液制剂，其包含纯化的非离子表面活性剂和其它组分中的添加剂，其中添加剂是形成离子的离子添加剂或胺添加剂铵型盐在酸性前体溶液中。使用这种前体溶液制剂可以形成介电常数小于2.5，适当的机械性能和最低水平的碱金属杂质的薄膜。在一个实施方案中，这通过纯化表面活性剂并将离子或胺添加剂例如四烷基铵盐和胺添加到原料前体溶液中来实现。在一些实施方案中，离子添加剂是选自一般组成的阳离子添加剂组合物[NR（CH 3）3）其中R是链长1至24的疏水性配体，包括四甲基铵和十六烷基三甲基铵，并且A是一种阴离子，其可以选自下组：基本上由甲酸盐，硝酸盐，草酸盐，乙酸盐，磷酸盐，碳酸盐和氢氧化物组成。在表面活性剂模板化的多孔氧化物前体制剂中加入四甲基铵盐或更一般的四烷基铵盐或四官能铵盐或有机胺，以增加离子含量，代替在表面活性剂纯化过程中除去的碱离子杂质（钠和钾），但发现以促进所形成的电介质的形成。

5. 发明授权

US06875687B1 Capping layer for extreme low dielectric constant films 有权
标题翻译：用于极低介电常数膜的封盖层
公开(公告)号：US06875687B1
公开(公告)日：2005-04-05
申请号：US09692527
申请日：2000-10-18
申请人： Timothy Weidman , Michael P Nault , Josephine J Chang
发明人： Timothy Weidman , Michael P Nault , Josephine J Chang
IPC分类号： C23C16/32 , H01L21/312 , H01L21/314 , H01L21/316 , H01L21/768 , H01L21/4763
CPC分类号： H01L21/02167 , C23C16/325 , H01L21/02126 , H01L21/022 , H01L21/02203 , H01L21/02211 , H01L21/02274 , H01L21/02282 , H01L21/312 , H01L21/3148 , H01L21/31633 , H01L21/76807 , H01L21/76828 , H01L21/76829 , Y10S438/97
摘要： Specific embodiments of the invention provide a silicon-carbide-type or silicon oxycarbide (also often called carbon-doped-oxide [CDO] or organosilicate glass) capping material and method for depositing this capping material on ELK films which are used as a dielectric material in integrated circuits. The ELK film may include any ELK film including but not limited to inorganic, organic and hybrid dielectric materials and their respective porous versions. The silicon-carbide-type material may be an amorphous silicon carbide type material such as the commercially available BLOk™ material, or a carbon-doped oxide material such as the commercially available Black Diamond™ both of which are developed by Applied Materials of Santa Clara, Calif. The amorphous silicon carbide (a-SiC) material is deposited using a plasma process in a non-oxidizing environment and the CDO-type material is deposited using an oxygen-starved plasma process. The non-oxidative or oxygen-starved plasma processes do not significantly degrade the underlying film's chemical and electrical properties. The CDO material offers the advantageous property of having a lower dielectric constant value of less than 3.5 as opposed to the a-SiC material which has a dielectric constant of approximately 4.5. The CDO material besides, having a lower dielectric constant also has a superior adhesion characteristics to the underlying ELK material. However, experiments have indicated that despite its higher dielectric constant, the a-SiC-type material (e.g. BLOk™) may be used to generate capped ELK films with similar or even reduced dielectric constants relative to lower k capped films, and may provide composite (i.e. ELK+cap) structures exhibiting superior k stability.
摘要翻译：本发明的具体实施方案提供碳化硅型或硅碳氧化物（也通常称为碳掺杂氧化物[CDO]或有机硅酸盐玻璃）封盖材料以及用于在用作介电材料的ELK膜上沉积该封盖材料的方法在集成电路中。 ELK膜可以包括任何ELK膜，包括但不限于无机，有机和混合电介质材料及其各自的多孔形式。碳化硅型材料可以是非晶碳化硅型材料，例如可商购的BLOK TM材料，或者掺入碳的氧化物材料，例如可商购的Black Diamond TM，它们均由Applied 使用等离子体工艺在非氧化环境中沉积非晶碳化硅（a-SiC）材料，并使用缺氧等离子体工艺沉积CDO型材料。非氧化或缺氧等离子体工艺不会显着降低底层薄膜的化学和电学性能。与介电常数约为4.5的a-SiC材料相比，CDO材料提供具有小于3.5的较低介电常数值的有利特性。除了具有较低介电常数之外，CDO材料还具有优于下面的ELK材料的粘附特性。然而，实验已经表明，尽管其较高的介电常数，但是可以使用a-SiC型材料（例如BLOk TM）来产生相对于较低k的覆盖膜具有相似或甚至更低的介电常数的封闭的ELK膜，并且可以提供表现出优异k稳定性的复合材料（即ELK +帽）结构。

6. 发明授权

US06843881B2 Detecting chemiluminescent radiation in the cleaning of a substrate processing chamber 失效
标题翻译：在衬底处理室的清洁中检测化学发光辐射
公开(公告)号：US06843881B2
公开(公告)日：2005-01-18
申请号：US10115526
申请日：2002-04-02
申请人： Bok Hoen Kim , Nam Le , Martin Seamons , Ameeta Madhava , Michael P. Nault , Thomas Nowak , Tsutomu Tanaka , Moshe Sarfaty
发明人： Bok Hoen Kim , Nam Le , Martin Seamons , Ameeta Madhava , Michael P. Nault , Thomas Nowak , Tsutomu Tanaka , Moshe Sarfaty
IPC分类号： B08B7/00 , C23C16/44 , C23C16/52 , G01N21/76 , G05D27/02 , H01L21/306
CPC分类号： G05D27/02 , B08B7/0035 , C23C16/4405 , C23C16/52 , G01N21/76
摘要： In a substrate processing apparatus, a substrate processing chamber has a substrate support to support a substrate, a gas delivery system to provide an energized cleaning gas to the chamber to clean process residues formed on surfaces in the chamber during processing of the substrate, and an exhaust to exhaust the cleaning gas. A detector monitors a chemiluminescent radiation emitted from about a surface during cleaning of the process residues by the energized cleaning gas and generates a signal in relation to the monitored chemiluminescent radiation. A controller receives the signal and evaluates the signal to determine an endpoint of the cleaning process.
摘要翻译：在基板处理装置中，基板处理室具有用于支撑基板的基板支撑件，气体输送系统，用于向所述室提供通电的清洁气体，以清洁在所述基板的处理期间在所述室中形成的工艺残留物，以及排气以排出清洁气体。检测器在通过通电的清洁气体清洁过程残留物期间监测从表面周围发射的化学发光辐射，并产生与被监测的化学发光辐射有关的信号。控制器接收信号并评估信号以确定清洁过程的端点。

7. 发明授权

US06818289B2 Mesoporous films having reduced dielectric constants 失效
标题翻译：具有降低的介电常数的介孔膜
公开(公告)号：US06818289B2
公开(公告)日：2004-11-16
申请号：US10263254
申请日：2002-10-02
申请人： James Edward MacDougall , Kevin Ray Heier , Scott Jeffrey Weigel , Timothy W. Weidman , Alexandros T. Demos , Nikolaos Bekiaris , Yunfeng Lu , Michael P Nault , Robert Parkash Mandal
发明人： James Edward MacDougall , Kevin Ray Heier , Scott Jeffrey Weigel , Timothy W. Weidman , Alexandros T. Demos , Nikolaos Bekiaris , Yunfeng Lu , Michael P Nault , Robert Parkash Mandal
IPC分类号： B32B326
CPC分类号： H01L21/02126 , C08L53/00 , C09D153/00 , H01L21/02203 , H01L21/02216 , H01L21/02282 , H01L21/31695 , Y10T428/249953 , Y10T428/249967
摘要： A process provides a ceramic film, such as a mesoporous silica film, on a substrate, such as a silicon wafer. The process includes preparing a film-forming fluid containing a ceramic precursor, a catalyst, a surfactant and a solvent, depositing the film-forming fluid on the substrate, and removing the solvent from the film-forming fluid on the substrate to produce the ceramic film on the substrate. The ceramic film has a dielectric constant below 2.3, a halide content of less than 1 ppm and a metal content of less than 500 ppm, making it useful for current and future microelectronics applications.
摘要翻译：一种方法在诸如硅晶片的基底上提供陶瓷膜，例如介孔二氧化硅膜。该方法包括制备含有陶瓷前体，催化剂，表面活性剂和溶剂的成膜流体，将成膜流体沉积在基材上，并从基材上的成膜流体中除去溶剂以制备陶瓷薄膜在基材上。陶瓷膜的介电常数低于2.3，卤化物含量小于1ppm，金属含量小于500ppm，使其适用于当前和未来的微电子应用。

8. 发明授权

US06592980B1 Mesoporous films having reduced dielectric constants 失效
公开(公告)号：US06592980B1
公开(公告)日：2003-07-15
申请号：US09711573
申请日：2000-11-13
申请人： James Edward MacDougall , Kevin Ray Heier , Scott Jeffrey Weigel , Timothy W. Weidman , Alexandros T. Demos , Nikolaos Bekiaris , Yunfeng Lu , Michael P. Nault , Robert Parkash Mandal
发明人： James Edward MacDougall , Kevin Ray Heier , Scott Jeffrey Weigel , Timothy W. Weidman , Alexandros T. Demos , Nikolaos Bekiaris , Yunfeng Lu , Michael P. Nault , Robert Parkash Mandal
IPC分类号： B32B326
CPC分类号： H01L21/02126 , C08L53/00 , C09D153/00 , H01L21/02203 , H01L21/02216 , H01L21/02282 , H01L21/31695 , Y10T428/249953 , Y10T428/249967
摘要： A process provides a ceramic film, such as a mesoporous silica film, on a substrate, such as a silicon wafer. The process includes preparing a film-forming fluid containing a ceramic precursor, a catalyst, a surfactant and a solvent, depositing the film-forming fluid on the substrate, and removing the solvent from the film-forming fluid on the substrate to produce the ceramic film on the substrate. The ceramic film has a dielectric constant below 2.3, a halide content of less than 1 ppm and a metal content of less than 500 ppm, making it useful for current and future microelectronics applications.

9. 发明授权

US06576568B2 Ionic additives for extreme low dielectric constant chemical formulations 失效
公开(公告)号：US06576568B2
公开(公告)日：2003-06-10
申请号：US09823932
申请日：2001-03-29
申请人： Robert P Mandal , Alexandros T Demos , Timothy Weidman , Michael P Nault , Nikolaos Bekiaris , Scott J Weigel , Lee A. Senecal , James E. MacDougall , Hareesh Thridandam
发明人： Robert P Mandal , Alexandros T Demos , Timothy Weidman , Michael P Nault , Nikolaos Bekiaris , Scott J Weigel , Lee A. Senecal , James E. MacDougall , Hareesh Thridandam
IPC分类号： H01L2131
CPC分类号： H01L21/02126 , C01B33/16 , H01L21/02203 , H01L21/02216 , H01L21/02282 , H01L21/31695 , Y10S438/96 , Y10T428/249953 , Y10T428/249969
摘要： A process for depositing porous silicon oxide-based films using a sol-gel approach utilizing a precursor solution formulation which includes a purified nonionic surfactant and an additive among other components, where the additive is either an ionic additive or an amine additive which forms an ionic ammonium type salt in the acidic precursor solution. Using this precursor solution formulation enables formation of a film having a dielectric constant less than 2.5, appropriate mechanical properties, and minimal levels of alkali metal impurities. In one embodiment, this is achieved by purifying the surfactant and adding ionic or amine additives such as tetraalkylammonium salts and amines to the stock precursor solution. In some embodiments, the ionic additive is a compound chosen from a group of cationic additives of the general composition [NR(CH3)3]+A−, where R is a hydrophobic ligand of chain length 1 to 24, including tetramethylammonium and cetyltrimethylammonium, and A− is an anion, which may be chosen from the group consisting essentially of formate, nitrate, oxalate, acetate, phosphate, carbonate, and hydroxide and combinations thereof. Tetramethylammonium salts, or more generally tetraalkylammonium salts, or tetraorganoammonium salts or organoamines in acidic media are added to surfactant templated porous oxide precursor formulations to increase the ionic content, replacing alkali ion impurities (sodium and potassium) removed during surfactant purification, but which are found to exhibit beneficial effects in promoting the formation of the resulting dielectric.

10. 发明授权

US5990000A Method and apparatus for improving gap-fill capability using chemical and physical etchbacks 失效
标题翻译：使用化学和物理回蚀改善间隙填充能力的方法和装置
公开(公告)号：US5990000A
公开(公告)日：1999-11-23
申请号：US803304
申请日：1997-02-20
申请人： Soonil Hong , Choon Kun Ryu , Michael P. Nault , Kaushal K. Singh , Anthony Lam , Virendra V. S. Rana , Andrew Conners
发明人： Soonil Hong , Choon Kun Ryu , Michael P. Nault , Kaushal K. Singh , Anthony Lam , Virendra V. S. Rana , Andrew Conners
IPC分类号： H01L21/302 , H01L21/3065 , H01L21/31 , H01L21/3105 , H01L21/316 , H01L21/3205 , H01L21/306
CPC分类号： H01L21/31051
摘要： A method and an apparatus for depositing a dielectric layer to fill in a gap between adjacent metal lines. In preferred embodiments of the method, a first dielectric layer is deposited over the lines and subsequently etched using both chemical and physical etchback steps. After the etchback steps are completed, a second dielectric layer is deposited over the first dielectric layer to fill in the gap.
摘要翻译：一种用于沉积介电层以填充相邻金属线之间的间隙的方法和装置。在该方法的优选实施例中，第一电介质层沉积在线上并随后使用化学和物理回蚀步骤进行蚀刻。在回蚀步骤完成之后，第二介电层沉积在第一介电层上以填充间隙。

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