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61. 发明申请

US20130087760A1 SEMICONDUCTOR LIGHT EMITTING DEVICE AND SEMICONDUCTOR WAFER 有权
标题翻译：半导体发光器件和半导体晶体管
公开(公告)号：US20130087760A1
公开(公告)日：2013-04-11
申请号：US13405509
申请日：2012-02-27
申请人： Hisashi Yoshida , Koichi Tachibana , Tomonari Shioda , Toshiki Hikosaka , Jongil Hwang , Hung Hung , Naoharu Sugiyama , Shinya Nunoue
发明人： Hisashi Yoshida , Koichi Tachibana , Tomonari Shioda , Toshiki Hikosaka , Jongil Hwang , Hung Hung , Naoharu Sugiyama , Shinya Nunoue
IPC分类号： H01L33/04
CPC分类号： H01L33/12 , H01L33/02 , H01L33/32
摘要： According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer and configured to emit a light having a peak wavelength of 440 nanometers or more. Tensile strain is applied to the first semiconductor layer. An edge dislocation density of the first semiconductor layer is 5×109/cm2 or less. A lattice mismatch factor between the first semiconductor layer and the light emitting layer is 0.11 percent or less.
摘要翻译：根据一个实施例，半导体发光器件包括第一导电类型的第一半导体层，第二导电类型的第二半导体层和设置在第一半导体层和第二半导体层之间的发光层，发出峰值波长为440纳米以上的光。对第一半导体层施加拉伸应变。第一半导体层的边缘位错密度为5×10 9 / cm 2以下。第一半导体层和发光层之间的晶格失配因子为0.11％以下。

62. 发明申请

US20120292649A1 SEMICONDUCTOR LIGHT EMITTING DEVICE, WAFER, AND METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR CRYSTAL LAYER 有权
标题翻译：半导体发光器件，波形和制造氮化物半导体晶体层的方法
公开(公告)号：US20120292649A1
公开(公告)日：2012-11-22
申请号：US13220059
申请日：2011-08-29
申请人： Naoharu Sugiyama , Taisuke Sato , Hiroshi Ono , Satoshi Mitsugi , Tomonari Shioda , Jongil Hwang , Hung Hung , Shinya Nunoue
发明人： Naoharu Sugiyama , Taisuke Sato , Hiroshi Ono , Satoshi Mitsugi , Tomonari Shioda , Jongil Hwang , Hung Hung , Shinya Nunoue
IPC分类号： H01L33/22 , H01L29/00 , H01L21/20
CPC分类号： H01L33/58 , H01L21/02381 , H01L21/02458 , H01L21/02494 , H01L21/0254 , H01L21/02576 , H01L21/02631 , H01L21/02639 , H01L21/0265 , H01L21/02664 , H01L33/08 , H01L33/12 , H01L33/20 , H01L33/32 , H01L33/36 , H01L33/405 , H01L33/42 , H01L33/44
摘要： According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer, a light emitting layer, a second semiconductor layer, and a low refractive index layer. The first semiconductor layer has a first major surface and a second major surface being opposite to the first major surface. The light emitting layer has an active layer provided on the second major surface. The second semiconductor layer is provided on the light emitting layer. The low refractive index layer covers partially the first major surface and has a refractive index lower than the refractive index of the first semiconductor layer.
摘要翻译：根据一个实施例，半导体发光器件包括第一半导体层，发光层，第二半导体层和低折射率层。第一半导体层具有与第一主表面相对的第一主表面和第二主表面。发光层具有设置在第二主表面上的有源层。第二半导体层设置在发光层上。低折射率层部分地覆盖第一主表面，并且折射率低于第一半导体层的折射率。

63. 发明授权

US08569943B2 Luminescent material 有权
标题翻译：发光材料
公开(公告)号：US08569943B2
公开(公告)日：2013-10-29
申请号：US13601433
申请日：2012-08-31
申请人： Iwao Mitsuishi , Naotoshi Matsuda , Yumi Fukuda , Keiko Albessard , Aoi Okada , Masahiro Kato , Ryosuke Hiramatsu , Yasushi Hattori , Shinya Nunoue
发明人： Iwao Mitsuishi , Naotoshi Matsuda , Yumi Fukuda , Keiko Albessard , Aoi Okada , Masahiro Kato , Ryosuke Hiramatsu , Yasushi Hattori , Shinya Nunoue
IPC分类号： H01J1/63 , C09K11/64 , C09K11/54
CPC分类号： C09K11/7734 , C09K11/0883 , H01L33/502 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H05B33/12 , H01L2924/00014 , H01L2924/00
摘要： According to one embodiment, the luminescent material emits light having an luminescence peak within a wavelength range of 550 to 590 nm when excited with light having an emission peak in a wavelength range of 250 to 520 nm. The luminescent material has a composition represented by the following formula 1. (Sr1-xEux)aSibAlOcNd formula 1 wherein x, a, b, c and d satisfy following condition: 0
摘要翻译：根据一个实施例，当在具有250至520nm的波长范围内的发射峰的光激发时，发光材料发射具有在550至590nm的波长范围内的发光峰的光。发光材料具有由下式1表示的组成。（Sr1-xEux）aSibAlOcNdformula 1其中x，a，b，c和d满足以下条件：0

64. 发明授权

US08232118B2 Light emitting device and method for manufacturing the same 有权
标题翻译：发光元件及其制造方法
公开(公告)号：US08232118B2
公开(公告)日：2012-07-31
申请号：US13078240
申请日：2011-04-01
申请人： Iwao Mitsuishi , Shinya Nunoue , Yasushi Hattori , Kuniaki Konno
发明人： Iwao Mitsuishi , Shinya Nunoue , Yasushi Hattori , Kuniaki Konno
IPC分类号： H01L21/00
CPC分类号： F21K9/00 , H01L33/507 , H01L2224/45144 , H01L2224/48091 , H01L2924/3511 , H01L2924/00014 , H01L2924/00
摘要： A light emitting device includes: a substrate having a concave portion formed on a surface thereof; a light emitting element emitting a first light which is a blue light or a near-ultraviolet light; a resin sheet being a deformable resin sheet formed on the substrate so as to cover the light emitting element; a first transmissive layer formed in a hemispherical shape on the first region of the resin sheet, and transmitting the first light; a color conversion layer including a fluorescent material that converts the first light into a second light of a different wavelength from that of the first light and a transmissive material that transmits the first light, the color conversion layer covering the first transmissive layer in such a manner that an end portion reaches an upper face of the resin sheet; and a second transmissive layer covering the color conversion layer in such a manner that an end portion reaches the upper face of the resin sheet, and transmitting the first light and the second light.
摘要翻译：发光器件包括：在其表面上形成有凹部的基板; 发射蓝光或近紫外光的第一光的发光元件; 树脂片，其是形成在所述基板上以覆盖所述发光元件的可变形树脂片; 在所述树脂片的所述第一区域上形成为半球形的第一透射层，并透射所述第一光; 颜色转换层，其包括将第一光转换成与第一光不同的波长的第二光和透射第一光的透射材料的荧光材料，以这种方式覆盖第一透射层的颜色转换层端部到达树脂片的上表面; 以及第二透射层，其以使得端部到达树脂片的上表面并且透射第一光和第二光的方式覆盖颜色转换层。

65. 发明授权

US09048362B2 Semiconductor light emitting device 有权
标题翻译：半导体发光器件
公开(公告)号：US09048362B2
公开(公告)日：2015-06-02
申请号：US13405565
申请日：2012-02-27
申请人： Shigeya Kimura , Yoshiyuki Harada , Hajime Nago , Koichi Tachibana , Shinya Nunoue
发明人： Shigeya Kimura , Yoshiyuki Harada , Hajime Nago , Koichi Tachibana , Shinya Nunoue
IPC分类号： H01L33/00 , H01L33/06 , H01L33/32 , B82Y20/00 , H01S5/343 , H01S5/34
CPC分类号： H01L33/06 , B82Y20/00 , H01L33/12 , H01L33/32 , H01S5/3408 , H01S5/34333
摘要： According to one embodiment, a semiconductor light emitting device includes n-type and p-type semiconductor layers containing a nitride semiconductor and a light emitting layer. The emitting layer includes a barrier layer containing III group elements, and a well layer stacked with the barrier layer and containing III group elements. The barrier layer is divided into a first portion on an n-type semiconductor layer side and a second portion on a p-type semiconductor layer side, an In composition ratio in the III group elements of the second portion is lower than that of the first portion. The well layer is divided into a third portion on an n-type semiconductor layer side and a fourth portion on a p-type semiconductor layer side, an In composition ratio in the III group elements of the fourth portion is higher than that of the third portion.
摘要翻译：根据一个实施例，半导体发光器件包括含有氮化物半导体和发光层的n型和p型半导体层。发光层包括含有III族元素的阻挡层，以及与阻挡层堆叠并含有III族元素的阱层。阻挡层被分为n型半导体层侧的第一部分和p型半导体层侧的第二部分，第二部分的III族元素中的In组成比低于第一部分一部分。阱层被分为n型半导体层侧的第三部分和p型半导体层侧的第四部分，第四部分的III族元素中的In组成比高于第三部分的第三部分一部分。

66. 发明授权

US08728237B2 Crystal growth method for nitride semiconductor having a multiquantum well structure 有权
标题翻译：具有多量子阱结构的氮化物半导体的晶体生长方法
公开(公告)号：US08728237B2
公开(公告)日：2014-05-20
申请号：US12874594
申请日：2010-09-02
申请人： Tomonari Shioda , Toshiki Hikosaka , Yoshiyuki Harada , Koichi Tachibana , Shinya Nunoue
发明人： Tomonari Shioda , Toshiki Hikosaka , Yoshiyuki Harada , Koichi Tachibana , Shinya Nunoue
IPC分类号： C30B25/02
CPC分类号： H01L21/02636 , C30B25/02 , C30B29/403 , H01L21/0254 , H01L33/007
摘要： A method for growing nitride semiconductor crystals contains: growing a first semiconductor layer containing InxGa1-xN (0
摘要翻译：一种用于生长氮化物半导体晶体的方法包括：使用含有惰性气体的第一载气，在第一生长温度下，在衬底上生长含有In x Ga 1-x N（0

67. 发明申请

US20130234151A1 NITRIDE SEMICONDUCTOR ELEMENT AND NITRIDE SEMICONDUCTOR WAFER 有权
标题翻译：氮化物半导体元件和氮化物半导体晶体管
公开(公告)号：US20130234151A1
公开(公告)日：2013-09-12
申请号：US13602868
申请日：2012-09-04
申请人： Toshiki HIKOSAKA , Yoshiyuki Harada , Hisashi Yoshida , Naoharu Sugiyama , Shinya Nunoue
发明人： Toshiki HIKOSAKA , Yoshiyuki Harada , Hisashi Yoshida , Naoharu Sugiyama , Shinya Nunoue
IPC分类号： H01L29/20
CPC分类号： H01L29/205 , B82Y20/00 , H01L21/02458 , H01L21/02505 , H01L21/0254 , H01L29/2003 , H01L29/365 , H01L29/7783 , H01L33/06 , H01L33/12 , H01L33/32
摘要： According to one embodiment, a nitride semiconductor element includes a foundation layer, a functional layer and a stacked body. The stacked body is provided between the foundation layer and the functional layer. The stacked body includes a first stacked intermediate layer including a first GaN intermediate layer, a first high Al composition layer of Alx1Ga1-x1N (0
摘要翻译：根据一个实施例，氮化物半导体元件包括基底层，功能层和层叠体。层叠体设置在基础层和功能层之间。层叠体包括第一层叠中间层，其包括第一GaN中间层，Al x Ga 1-x N 1的第一高Al组成层（0

68. 发明授权

US08399896B2 Semiconductor light emitting device and method of manufacturing the same 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US08399896B2
公开(公告)日：2013-03-19
申请号：US12875503
申请日：2010-09-03
申请人： Toshiki Hikosaka , Tomonari Shioda , Yoshiyuki Harada , Shinya Nunoue
发明人： Toshiki Hikosaka , Tomonari Shioda , Yoshiyuki Harada , Shinya Nunoue
IPC分类号： H01L33/30 , H01L33/32
CPC分类号： H01L33/06 , H01L33/007 , H01L33/32
摘要： According to one embodiment, a semiconductor light emitting device includes n-type and p-type semiconductor layers, barrier layers, and a well layer. The n-type and p-type semiconductor layers and the barrier layers include nitride semiconductor. The barrier layers are provided between the n-type and p-type semiconductor layers. The well layer is provided between the barrier layers, has a smaller band gap energy than the barrier layers, and includes InGaN. At least one of the barrier layers includes first, second, and third layers. The second layer is provided closer to the p-type semiconductor layer than the first layer. The third layer is provided closer to the p-type semiconductor layer than the second layer. The second layer includes AlxGa1−xN (0
摘要翻译：根据一个实施例，半导体发光器件包括n型和p型半导体层，势垒层和阱层。 n型和p型半导体层和阻挡层包括氮化物半导体。阻挡层设置在n型和p型半导体层之间。阱层设置在阻挡层之间，具有比阻挡层更小的带隙能量，并且包括InGaN。阻挡层中的至少一个包括第一层，第二层和第三层。第二层比第一层更靠近p型半导体层。第三层比第二层更靠近p型半导体层。第二层包括Al x Ga 1-x N（0

69. 发明申请

US20110197808A1 CRYSTAL GROWTH METHOD FOR NITRIDE SEMICONDUCTOR 有权
标题翻译：氮化物半导体的晶体生长方法
公开(公告)号：US20110197808A1
公开(公告)日：2011-08-18
申请号：US12874594
申请日：2010-09-02
申请人： Tomonari SHIODA , Toshiki Hikosaka , Yoshiyuki Harada , Koichi Tachibana , Shinya Nunoue
发明人： Tomonari SHIODA , Toshiki Hikosaka , Yoshiyuki Harada , Koichi Tachibana , Shinya Nunoue
IPC分类号： C30B25/10
CPC分类号： H01L21/02636 , C30B25/02 , C30B29/403 , H01L21/0254 , H01L33/007
摘要： Certain embodiments provide a crystal growth method for nitride semiconductors, including: growing a first semiconductor layer containing InxGa1-xN (0
摘要翻译：某些实施例提供了一种用于氮化物半导体的晶体生长方法，其包括：在第一生长温度下，在衬底上生长含有In x Ga 1-x N（0

70. 发明申请

US20110143463A1 VAPOR DEPOSITION METHOD AND VAPOR DEPOSITION APPARATUS 有权
标题翻译：蒸气沉积法和蒸气沉积装置
公开(公告)号：US20110143463A1
公开(公告)日：2011-06-16
申请号：US12875835
申请日：2010-09-03
申请人： Yoshiyuki HARADA , Koichi Tachibana , Toshiki Hikosaka , Hajime Nago , Shinya Nunoue
发明人： Yoshiyuki HARADA , Koichi Tachibana , Toshiki Hikosaka , Hajime Nago , Shinya Nunoue
IPC分类号： H01L21/66 , C23C16/00 , C23C16/34
CPC分类号： C23C16/45504 , C23C16/303 , C23C16/45574 , H01L21/0254 , H01L21/02573 , H01L21/0262 , H01L22/26 , H01L2924/0002 , H01L2924/00
摘要： According to one embodiment, a vapor deposition method is disclosed for forming a nitride semiconductor layer on a substrate by supplying a group III source-material gas and a group V source-material gas. The method can deposit a first semiconductor layer including a nitride semiconductor having a compositional proportion of Al in group III elements of not less than 10 atomic percent by supplying the group III source-material gas from a first outlet and by supplying the group V source-material gas from a second outlet. The method can deposit a second semiconductor layer including a nitride semiconductor having a compositional proportion of Al in group III elements of less than 10 atomic percent by mixing the group III and group V source-material gases and supplying the mixed group III and group V source-material gases from at least one of the first outlet and the second outlet.
摘要翻译：根据一个实施例，公开了一种通过提供III族源材料气体和V族原料气体在衬底上形成氮化物半导体层的气相沉积方法。该方法可以通过从第一出口提供III族源材料气体并且通过提供第V族源极材料来沉积包括具有不小于10原子％的III族元素中Al的组分比例的氮化物半导体的第一半导体层，来自第二出口的原料气体。该方法可以通过混合第III族和第V族源材料气体并将第III族和V族源混合，从而沉积包含具有小于10原子％的III族元素中的Al的组分比例的氮化物半导体的第二半导体层 - 来自第一出口和第二出口中的至少一个的材料气体。

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