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61. 发明授权

US06995423B2 Memory device having a P+ gate and thin bottom oxide and method of erasing same 有权
标题翻译：具有P +栅极和薄底部氧化物的存储器件及其擦除方法
公开(公告)号：US06995423B2
公开(公告)日：2006-02-07
申请号：US10878091
申请日：2004-06-28
申请人： Wei Zheng , Chi Chang , Tazrien Kamal
发明人： Wei Zheng , Chi Chang , Tazrien Kamal
IPC分类号： H01L29/788 , H01L29/792
CPC分类号： H01L29/7923 , H01L29/7887
摘要： A non-volatile memory device includes a semiconductor substrate and an N-type source and drain within the substrate. An oxide-nitride-oxide (ONO) stack is formed over the substrate. The ONO stack includes a thin bottom oxide layer. A P+ polysilicon gate electrode is formed over the ONO stack. The memory device is operative to perform a channel erase operation in which a pair of charge storing cells within the nitride layer are erased simultaneously.
摘要翻译：非易失性存储器件包括衬底内的半导体衬底和N型源极和漏极。在衬底上形成氧化物 - 氧化物 - 氧化物（ONO）堆叠。 ONO堆叠包括薄的底部氧化物层。在ONO堆叠上形成P + SUPER多晶硅栅电极。存储器件可操作以执行其中同时擦除氮化物层内的一对电荷存储单元的通道擦除操作。

62. 发明授权

US06965143B2 Recess channel flash architecture for reduced short channel effect 失效
标题翻译：凹槽通道闪存体系结构，可缩短短通道效果
公开(公告)号：US06965143B2
公开(公告)日：2005-11-15
申请号：US10683649
申请日：2003-10-10
申请人： Wei Zheng , Mark W. Randolph
发明人： Wei Zheng , Mark W. Randolph
IPC分类号： H01L29/423 , H01L29/788 , H01L29/792
CPC分类号： H01L29/42336 , H01L29/7883 , H01L29/792
摘要： A memory cell with reduced short channel effects is described. A source region and a drain region are formed in a semiconductor substrate. A trench region is formed between the source region and the drain region. A recessed channel region is formed below the trench region, the source region and the drain region. A gate dielectric layer is formed in the trench region of the semiconductor substrate above the recessed channel region and between the source region and the drain region. A control gate layer is formed on the semiconductor substrate above the recessed channel region, wherein the control gate layer is separated from the recessed channel region by the gate dielectric layer.
摘要翻译：描述了具有减小的短通道效应的存储单元。在半导体衬底中形成源极区和漏极区。在源极区域和漏极区域之间形成沟槽区域。在沟槽区域，源极区域和漏极区域之下形成凹陷沟道区域。栅极电介质层形成在半导体衬底的沟槽区域中的凹陷沟道区域之上和源极区域与漏极区域之间。在半导体衬底上形成控制栅极层，该沟道区位于凹槽之上，其中控制栅极层通过栅极电介质层与凹陷沟道区分离。

63. 发明授权

US06885590B1 Memory device having A P+ gate and thin bottom oxide and method of erasing same 有权
标题翻译：具有P +栅极和薄底部氧化物的存储器件及其擦除方法
公开(公告)号：US06885590B1
公开(公告)日：2005-04-26
申请号：US10341881
申请日：2003-01-14
申请人： Wei Zheng , Chi Chang , Tazrien Kamal
发明人： Wei Zheng , Chi Chang , Tazrien Kamal
IPC分类号： H01L29/788 , H01L29/792 , G11C16/04
CPC分类号： H01L29/7923 , H01L29/7887
摘要： A non-volatile memory device includes a semiconductor substrate and an N-type source and drain within the substrate. An oxide-nitride-oxide (ONO) stack is formed over the substrate. The ONO stack includes a thin bottom oxide layer. A P+ polysilicon electrode is formed over the ONO stack. The memory device is operative to perform a channel erase operation in which a pair of charge storing cells with the nitride layer are erased simultaneously.
摘要翻译：非易失性存储器件包括衬底内的半导体衬底和N型源极和漏极。在衬底上形成氧化物 - 氧化物 - 氧化物（ONO）堆叠。 ONO堆叠包括薄的底部氧化物层。在ONO堆叠上形成P + SUPER多晶硅电极。存储器件可操作以执行信道擦除操作，其中同时擦除具有氮化物层的一对电荷存储单元。

64. 发明授权

US06861307B2 Fully isolated dielectric memory cell structure for a dual bit nitride storage device and process for making same 有权
标题翻译：用于双位氮化物存储器件的完全隔离的介电存储器单元结构及其制造方法
公开(公告)号：US06861307B2
公开(公告)日：2005-03-01
申请号：US10631199
申请日：2003-07-31
申请人： Wei Zheng , Mark W. Randolph , Nicholas H. Tripsas , Zoran Krivokapic , Jack F. Thomas , Mark T. Ramsbey
发明人： Wei Zheng , Mark W. Randolph , Nicholas H. Tripsas , Zoran Krivokapic , Jack F. Thomas , Mark T. Ramsbey
IPC分类号： H01L21/28 , H01L29/51 , H01L29/792 , H01L21/8238
CPC分类号： H01L21/28194 , H01L21/28202 , H01L21/28282 , H01L29/512 , H01L29/513 , H01L29/517 , H01L29/518 , H01L29/7923
摘要： A method of fabricating a dual bit dielectric memory cell structure on a silicon substrate includes implanting buried bit lines within the substrate and fabricating a layered island on the surface of the substrate between the buried bit lines. The island has a perimeter defining a gate region, and comprises a tunnel dielectric layer on the surface of the silicon on insulator wafer, an isolation barrier dielectric layer on the surface of the tunnel dielectric layer, a top dielectric layer on the surface of the isolation barrier dielectric layer, and a polysilicon gate on the surface of the top dielectric layer. A portion of the isolation barrier dielectric layer is removed to form an undercut region within the gate region and a charge trapping material is deposited within the undercut region.
摘要翻译：在硅衬底上制造双位电介质存储单元结构的方法包括在衬底内埋入掩埋位线，并在掩埋位线之间的衬底表面上制造分层岛。该岛具有限定栅极区域的周边，并且包括在绝缘体上硅晶片的表面上的隧道介电层，在隧道介电层的表面上的隔离阻挡介电层，隔离表面上的顶部介电层势垒介电层，以及在顶部介电层的表面上的多晶硅栅极。去除隔离势垒介电层的一部分以在栅极区内形成底切区域，并且电荷俘获材料沉积在底切区域内。

65. 发明授权

US06754105B1 Trench side wall charge trapping dielectric flash memory device 有权
标题翻译：沟槽侧壁电荷俘获电介质闪存器件
公开(公告)号：US06754105B1
公开(公告)日：2004-06-22
申请号：US10430582
申请日：2003-05-06
申请人： Chi Chang , Wei Zheng , Hidehiko Shiraiwa
发明人： Chi Chang , Wei Zheng , Hidehiko Shiraiwa
IPC分类号： G11C1604
CPC分类号： H01L27/11568 , G11C16/0475 , H01L27/115 , H01L29/42336 , H01L29/7887 , H01L29/7923
摘要： A memory device that includes a charge trapping region disposed laterally adjacent a first end of a channel such that energetic electrons traversing the channel can be ballistically injected into the charge trapping region.
摘要翻译：一种存储器件，其包括电荷俘获区域，该电荷俘获区域设置成横向邻近沟道的第一端，使得穿过沟道的高能电子可以弹道地注入电荷俘获区域。

66. 发明授权

US09698185B2 Partial buried channel transfer device for image sensors 有权
公开(公告)号：US09698185B2
公开(公告)日：2017-07-04
申请号：US13273026
申请日：2011-10-13
申请人： Gang Chen , Sing-Chung Hu , Hsin-Chih Tai , Duli Mao , Manoj Bikumandla , Wei Zheng , Yin Qian , Zhibin Xiong , Vincent Venezia , Keh-Chiang Ku , Howard E. Rhodes
发明人： Gang Chen , Sing-Chung Hu , Hsin-Chih Tai , Duli Mao , Manoj Bikumandla , Wei Zheng , Yin Qian , Zhibin Xiong , Vincent Venezia , Keh-Chiang Ku , Howard E. Rhodes
IPC分类号： H01L27/148 , H01L31/062 , H01L31/101 , H01L31/113 , H01L27/146
CPC分类号： H01L27/14616 , H01L27/14689
摘要： Embodiments of an image sensor pixel that includes a photosensitive element, a floating diffusion region, and a transfer device. The photosensitive element is disposed in a substrate layer for accumulating an image charge in response to light. The floating diffusion region is dispose in the substrate layer to receive the image charge from the photosensitive element. The transfer device is disposed between the photosensitive element and the floating diffusion region to selectively transfer the image charge from the photosensitive element to the floating diffusion region. The transfer device includes a buried channel device including a buried channel gate disposed over a buried channel dopant region. The transfer device also includes a surface channel device including a surface channel gate disposed over a surface channel region. The surface channel device is in series with the buried channel device. The surface channel gate has the opposite polarity of the buried channel gate.

67. 发明授权

US09173898B2 Methods of treating giardiasis 有权
标题翻译：治疗贾治菌的方法
公开(公告)号：US09173898B2
公开(公告)日：2015-11-03
申请号：US13878832
申请日：2011-10-12
申请人： Wei Zheng , Catherine Chen , Juan Jose Marugan , Noel Southall , Christopher P. Austin , Andrey Galkin , Liudmila Kulakova , Osnat Herzberg
发明人： Wei Zheng , Catherine Chen , Juan Jose Marugan , Noel Southall , Christopher P. Austin , Andrey Galkin , Liudmila Kulakova , Osnat Herzberg
IPC分类号： A01N43/04 , A61K31/70 , A61K31/7135 , A61K31/05 , A61K31/137 , A61K31/145 , A61K31/167 , A61K31/28 , A61K31/285 , A61K31/336 , A61K31/345 , A61K31/351 , A61K31/396 , A61K31/4184 , A61K31/42 , A61K31/427 , A61K31/428 , A61K31/436 , A61K31/475 , A61K31/498 , A61K31/4995 , A61K31/525 , A61K31/69 , A61K31/704 , A61K31/7068 , A61K31/714 , A61K31/426 , A61K31/4375 , A61K31/706
CPC分类号： A61K31/7135 , A61K31/05 , A61K31/137 , A61K31/145 , A61K31/167 , A61K31/28 , A61K31/285 , A61K31/336 , A61K31/345 , A61K31/351 , A61K31/396 , A61K31/4184 , A61K31/42 , A61K31/426 , A61K31/427 , A61K31/428 , A61K31/436 , A61K31/4375 , A61K31/475 , A61K31/498 , A61K31/4995 , A61K31/525 , A61K31/69 , A61K31/704 , A61K31/706 , A61K31/7068 , A61K31/714 , Y02A50/491
摘要： Compounds useful for the treatment of giardiasis are described.
摘要翻译：描述了可用于治疗贾第虫病的化合物。

68. 发明授权

US08709770B2 Process for improving the hydrolysis of cellulose in high consistency systems using one or more unmixed and mixed hydrolysis reactors 有权
标题翻译：使用一个或多个未混合和混合的水解反应器改进高稠度体系中纤维素水解的方法
公开(公告)号：US08709770B2
公开(公告)日：2014-04-29
申请号：US13216368
申请日：2011-08-24
申请人： Peter J. E. Harlick , Wei Zheng
发明人： Peter J. E. Harlick , Wei Zheng
IPC分类号： C12P7/10
CPC分类号： C12M45/06 , C12P7/10 , C12P19/02 , C12P19/14 , C12P2203/00 , Y02E50/16
摘要： Provided is a process for the enzymatic hydrolysis of cellulose to produce glucose from a pretreated cellulosic feedstock. The process comprises providing an aqueous slurry of the pretreated cellulosic feedstock that has a water content that is less than about 140% of the maximum water holding capacity of the pretreated cellulosic feedstock. The aqueous slurry of the pretreated cellulosic feedstock is fed to one or more unmixed hydrolysis reactors and hydrolyzed with cellulase enzymes therein. In the unmixed hydrolysis reactor(s), the cellulase enzymes hydrolyze a portion of the cellulose to produce soluble sugars, thereby producing a mixture of partially hydrolyzed cellulose containing soluble sugars. The hydrolysis of the cellulose to glucose is continued by feeding the mixture of partially hydrolyzed cellulose to one or more mixed hydrolysis reactors. Also provided are systems for carrying out the foregoing enzymatic hydrolysis.
摘要翻译：提供了一种纤维素酶水解从预处理的纤维素原料产生葡萄糖的方法。该方法包括提供预处理的纤维素原料的含水浆料，其含水量小于预处理的纤维素原料的最大保水能力的约140％。将预处理的纤维素原料的含水浆料进料到一个或多个未混合的水解反应器中，并用其中的纤维素酶水解。在未混合的水解反应器中，纤维素酶水解一部分纤维素以产生可溶性糖，从而产生含有可溶性糖的部分水解的纤维素的混合物。通过将部分水解的纤维素的混合物喂入一个或多个混合水解反应器来继续将纤维素水解成葡萄糖。还提供了用于进行上述酶水解的系统。

69. 发明授权

US08645476B2 Method and apparatus for command synchronization 有权
标题翻译：用于命令同步的方法和装置
公开(公告)号：US08645476B2
公开(公告)日：2014-02-04
申请号：US12513156
申请日：2006-11-06
申请人： Kecheng Lu , Lejun Zhu , Wei Zheng , Yanbing Zhu , Jianrong Chen , Yuman Zhang
发明人： Kecheng Lu , Lejun Zhu , Wei Zheng , Yanbing Zhu , Jianrong Chen , Yuman Zhang
IPC分类号： G06F15/16 , H04J3/06
CPC分类号： H04L41/02 , G08C17/02 , H04L67/125 , H04L67/325
摘要： Method and apparatus for command synchronization is described. In some embodiments, a remote system system may set up a user interactive session with a local device according to a user interaction protocol. The remote system may insert a predetermined execution time into a first command and send the first command to a local device according to the user interaction protocol. The first command, when executed on the local device, causes a second command compliant with the user interaction protocol to execute on the local device at the predetermined execution time.
摘要翻译：描述了用于命令同步的方法和装置。在一些实施例中，远程系统系统可以根据用户交互协议来建立与本地设备的用户交互式会话。远程系统可以将预定的执行时间插入到第一命令中，并且根据用户交互协议将第一命令发送到本地设备。第一命令在本地设备上执行时，使得符合用户交互协议的第二命令在预定执行时间在本地设备上执行。

70. 发明申请

US20130191381A1 METHOD AND APPARATUS OF ORDERING SEARCH RESULTS 有权
标题翻译：订购搜索结果的方法和设备
公开(公告)号：US20130191381A1
公开(公告)日：2013-07-25
申请号：US13381069
申请日：2011-09-26
申请人： Huaxing Jin , Wei Zheng , Peng Huang , Xu Yang , Feng Lin , Jiong Feng , Qin Zhang
发明人： Huaxing Jin , Wei Zheng , Peng Huang , Xu Yang , Feng Lin , Jiong Feng , Qin Zhang
IPC分类号： G06F17/30
CPC分类号： G06F17/3053 , G06F17/30964
摘要： Ordering search results may include obtaining an exposed log file from a log system, computing a Bayesian posterior probability for relevancy between the log file and a search request, computing an expected value of the relevancy between the log file and the search request based on the Bayesian posterior probability, storing the search request and an identifier of the log file as a key and the expected value of the relevancy between the log file and the search request as a value into a search data structure, in response to receiving a search request submitted by a user, finding expected values of relevancy between the submitted search request and log files that are relevant to the submitted search request from the search data structure, and ordering the found log files in a descending order of the expected values.
摘要翻译：订购搜索结果可以包括从日志系统获取暴露的日志文件，计算日志文件和搜索请求之间的相关性的贝叶斯后验概率，基于贝叶斯计算日志文件和搜索请求之间的相关性的期望值后验概率，响应于接收到由所述搜索请求提交的搜索请求，将所述搜索请求和所述日志文件的标识符作为密钥存储，并将所述日志文件和所述搜索请求之间的相关性的期望值作为值存储到搜索数据结构中一个用户，从搜索数据结构中找到所提交的搜索请求和与提交的搜索请求相关的日志文件之间的相关性的预期值，并按照预期值的降序对找到的日志文件进行排序。

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