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61. 发明授权

US06537844B1 Manufacturing method for exposure mask, generating method for mask substrate information, mask substrate, exposure mask, manufacturing method for semiconductor device and server 有权
公开(公告)号：US06537844B1
公开(公告)日：2003-03-25
申请号：US10087860
申请日：2002-03-05
申请人： Masamitsu Itoh
发明人： Masamitsu Itoh
IPC分类号： H01L2100
CPC分类号： G03F7/707 , G03F1/60 , G03F7/703 , G03F7/70433 , G03F7/70783 , Y10S438/975
摘要： There is disclosed a manufacturing method for exposure mask, which comprises acquiring a first information showing surface shape of surface of each of a plurality of mask substrates, and a second information showing the flatness of the surface of each of mask substrates before and after chucked on a mask stage of an exposure apparatus, forming a corresponding relation of each mask substrate, the first information and the second information, selecting the second information showing a desired flatness among the second information of the corresponding relation, and preparing another mask substrate having the same surface shape as the surface shape indicated by the first information in the corresponding relation with the selected second information, and forming a desired pattern on the above-mentioned another mask substrate.

62. 发明授权

US5629115A Exposure mask and method and apparatus for manufacturing the same 失效
标题翻译：曝光掩模及其制造方法和装置
公开(公告)号：US5629115A
公开(公告)日：1997-05-13
申请号：US583857
申请日：1996-01-11
申请人： Kenji Kawano , Shinichi Ito , Iwao Higashikawa , Masamitsu Itoh , Takashi Kamo , Hiroaki Hazama , Takayuki Iwamatsu
发明人： Kenji Kawano , Shinichi Ito , Iwao Higashikawa , Masamitsu Itoh , Takashi Kamo , Hiroaki Hazama , Takayuki Iwamatsu
IPC分类号： G03F1/32 , G03F1/68 , G03F9/00
CPC分类号： G03F1/32 , G03F1/68
摘要： This invention provides an exposure mask including a translucent film formed on a light-transmitting substrate and having a mask pattern, and a stabilized region formed in the boundary between the light-transmitting substrate and the translucent film or on at least the surface of the translucent film to prevent variations in physical properties of the translucent film. In addition, this invention provides a method of manufacturing an exposure mask, including the steps of forming a translucent film on a light-transmitting substrate, forming a photosensitive resin film on the translucent film, forming a photosensitive resin pattern by exposing the photosensitive resin film to a radiation or a charged particle beam, removing an exposed portion of the translucent film by using the photosensitive resin pattern as a mask, removing the photosensitive resin pattern, and forming a stabilized region in the boundary between the light-transmitting substrate and the translucent film or on at least the surface of the translucent film before the step of forming the photosensitive resin film or after the step of forming the photosensitive resin pattern. Also, this invention provides an apparatus for manufacturing an exposure mask, including a light source for radiating light containing at least an exposure wavelength onto a translucent film formed on a light-transmitting substrate, a photodetecting unit for detecting light emitted from the light source and transmitted through or reflected by the translucent film, and a measuring unit for measuring the characteristic of the translucent film from the light detected by the photodetecting unit.
摘要翻译：本发明提供一种曝光掩模，其包括形成在透光基板上并具有掩模图案的半透明膜，以及形成在透光基板和半透膜之间的边界中的至少半透明的表面的稳定区域膜以防止半透明膜的物理性质的变化。此外，本发明提供一种制造曝光掩模的方法，包括以下步骤：在透光性基板上形成半透膜，在半透膜上形成感光性树脂膜，通过使感光性树脂膜曝光，形成感光性树脂图案通过使用感光性树脂图案作为掩模去除透光性膜的露出部分，除去感光性树脂图案，在透光性基板与透光性的界面之间形成稳定区域或在形成感光性树脂膜的步骤之前或在形成感光性树脂图案的步骤之后，至少在半透明膜的表面上。另外，本发明提供了一种用于制造曝光掩模的装置，包括用于将至少包含曝光波长的光发射到形成在透光基板上的半透明膜上的光源，用于检测从光源发射的光的光电检测单元和通过透光膜透射或反射，以及测量单元，用于根据由光检测单元检测到的光来测量半透膜的特性。

63. 发明授权

US4237232A Method of purifying distillers solubles and use of the purified matter 失效
标题翻译：净化酒糟可溶物的方法和纯化物质的使用
公开(公告)号：US4237232A
公开(公告)日：1980-12-02
申请号：US902225
申请日：1978-05-02
申请人： Kiyoshi Yoshizawa , Kikuo Nojiro , Masamitsu Itoh , Hiroshi Kiuchi , Kazuo Horii
发明人： Kiyoshi Yoshizawa , Kikuo Nojiro , Masamitsu Itoh , Hiroshi Kiuchi , Kazuo Horii
IPC分类号： A23K1/16 , A23K1/18 , C12N1/00 , C12N1/14 , C12N1/16 , C12N1/20
CPC分类号： C12N1/00 , A23K20/10 , A23K50/30 , Y10S426/807 , Y10S435/839
摘要： Distillers solubles are purified by a centrifugal separation to a degree above 50,000, which is the product of g .times. minute, or a filtration with addition of a filter aid. The clarified matter is purified by a molecular sieve treatment, ultrafiltration, reverse osmosis or an organic solvent precipitation. The clarified matter or purified matter thus obtained is pulverized by spray drying, lyophilic drying or air drying.Said clarified matter, purified matter or pulverized matter is added to a fermentation medium or a feed as an available component.
摘要翻译：蒸馏器可溶物通过离心分离纯化至50,000以上，其为g×分钟的产物，或通过加入助滤剂进行过滤。澄清物质通过分子筛处理，超滤，反渗透或有机溶剂沉淀纯化。通过喷雾干燥，亲液干燥或空气干燥将由此获得的澄清物质或纯化物粉碎。将所述澄清物质，纯化物质或粉碎物质作为可用组分加入到发酵培养基或饲料中。

64. 发明授权

US09034467B2 Reticle chuck cleaner 有权
标题翻译：标线卡盘清洁剂
公开(公告)号：US09034467B2
公开(公告)日：2015-05-19
申请号：US13192694
申请日：2011-07-28
申请人： Masamitsu Itoh , Katsuya Okumura , Taro Inada , Jun Watanabe
发明人： Masamitsu Itoh , Katsuya Okumura , Taro Inada , Jun Watanabe
IPC分类号： B32B7/12 , B08B7/00 , G03F7/20
CPC分类号： B08B7/0028 , B05D3/0254 , B05D5/00 , G03F7/707 , G03F7/70925 , Y10T428/28 , Y10T428/2848
摘要： According to one embodiment, a reticle chuck cleaner for cleaning a reticle chuck of an EUV exposure apparatus includes a substrate having a shape to be carried to the reticle chuck of the EUV exposure apparatus, and an adhesive formed on one of the main surfaces of the substrate.
摘要翻译：根据一个实施例，用于清洁EUV曝光装置的光罩卡盘的掩模版卡盘清洁器包括具有要携带到EUV曝光装置的掩模版卡盘的形状的基板，以及形成在其中一个主表面上的粘合剂基质。

65. 发明申请

US20140326278A1 RETICLE CHUCK CLEANER AND RETICLE CHUCK CLEANING METHOD 有权
标题翻译： RETICLE CHUCK CLEANER和RETICLE CHUCK CLEANING METHOD
公开(公告)号：US20140326278A1
公开(公告)日：2014-11-06
申请号：US14342718
申请日：2012-06-22
申请人： Yoshihito Kobayashi , Masamitsu Itoh , Taro Inada , Jun Watanabe
发明人： Yoshihito Kobayashi , Masamitsu Itoh , Taro Inada , Jun Watanabe
IPC分类号： B08B7/00
CPC分类号： B08B7/0028 , B08B7/0014 , G03F7/707 , G03F7/70925
摘要： There is provided a reticle chuck cleaner A for cleaning a reticle chuck of an apparatus, as a reticle chuck cleaner that allows easy cleaning of a reticle chuck in a vacuum chamber of an apparatus without exposing the chamber to the atmosphere and contributes to improvement of the operating ratio of the apparatus, including: an adhesive layer 1 to be adhered to a chuck region of the reticle chuck;a support layer 2 laminated on the adhesive layer 1; and a substrate 3 having a shape capable of being carried to the reticle chuck, the support layer 2 and the substrate 3 being partially bonded together in an adhesive region 41 of a partial adhesive layer 4.
摘要翻译：提供了一种用于清洁装置的光罩卡盘的光罩卡盘清洁器A，作为光罩卡盘清洁器，其能够容易地清洁设备的真空室中的光罩卡盘而不将该腔室暴露在大气中并有助于改进该装置的工作比例包括：粘合剂层1，其粘附到标线盘卡盘的卡盘区域; 层叠在粘合剂层1上的支撑层2; 以及具有能够被携带到掩模版卡盘的形状的基板3，支撑层2和基板3部分地粘合在部分粘合层4的粘合区域41中。

66. 发明授权

US08502171B2 Mask manufacturing device 有权
标题翻译：面膜制造装置
公开(公告)号：US08502171B2
公开(公告)日：2013-08-06
申请号：US13326612
申请日：2011-12-15
申请人： Masamitsu Itoh
发明人： Masamitsu Itoh
IPC分类号： A61N5/00
CPC分类号： G21K5/10 , B29C35/0894 , B29C37/0053 , B29C43/021 , B29C43/58 , B29C2043/025 , B29C2043/142 , B29C2043/3634 , B29C2043/5833 , B82Y10/00 , B82Y40/00 , G01B11/03 , G03F1/00 , G03F7/0002 , H01L21/02356
摘要： A pattern is formed on a mask substrate. Positional deviation information between an actual position of the pattern formed on the mask substrate and a design position decided at the time of designing the pattern is calculated. A heterogeneous layer of which a volume expands more greatly than that of surrounding mask substrate region is formed in a predetermined position within the mask substrate so that volume expansion of the heterogeneous layer according to the positional deviation information is achieved.
摘要翻译：在掩模基板上形成图案。计算形成在掩模基板上的图案的实际位置与设计图案时确定的设计位置之间的位置偏差信息。在掩模基板内的预定位置形成体积比周围掩模基板区域更大地膨胀的异质层，从而实现根据位置偏差信息的异质层的体积膨胀。

67. 发明申请

US20130179846A1 PHOTOMASK MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD 失效
标题翻译：光电子制造方法和半导体器件制造方法
公开(公告)号：US20130179846A1
公开(公告)日：2013-07-11
申请号：US13785604
申请日：2013-03-05
申请人： Masamitsu Itoh , Takashi Hirano , Kazuya Fukuhara
发明人： Masamitsu Itoh , Takashi Hirano , Kazuya Fukuhara
IPC分类号： G06F17/50
CPC分类号： G06F17/5081 , G03F1/50
摘要： This invention discloses a photomask manufacturing method. A pattern dimensional map is generated by preparing a photomask in which a mask pattern is formed on a transparent substrate, and measuring a mask in-plane distribution of the pattern dimensions. A transmittance correction coefficient map is generated by dividing a pattern formation region into a plurality of subregions, and determining a transmittance correction coefficient for each of the plurality of subregions. The transmittance correction value of each subregion is calculated on the basis of the pattern dimensional map and the transmittance correction coefficient map. The transmittance of the transparent substrate corresponding to each subregion is changed on the basis of the transmittance correction value.
摘要翻译：本发明公开了一种光掩模制造方法。通过准备其中在透明基板上形成掩模图案并测量图案尺寸的掩模面内分布的光掩模来生成图案尺寸图。通过将图案形成区域划分为多个子区域，并且确定多个子区域中的每个子区域的透射率校正系数来生成透射率校正系数图。基于图案尺寸图和透射率校正系数图计算每个子区域的透射率校正值。基于透射率校正值改变对应于每个子区域的透明基板的透射率。

68. 发明授权

US08227267B2 Template inspection method and manufacturing method for semiconductor device 有权
标题翻译：半导体器件的模板检查方法和制造方法
公开(公告)号：US08227267B2
公开(公告)日：2012-07-24
申请号：US12553906
申请日：2009-09-03
申请人： Ikuo Yoneda , Tetsuro Nakasugi , Masamitsu Itoh , Ryoichi Inanami
发明人： Ikuo Yoneda , Tetsuro Nakasugi , Masamitsu Itoh , Ryoichi Inanami
IPC分类号： H01L21/66
CPC分类号： G01N21/956 , B82Y10/00 , B82Y40/00 , G03F7/0002
摘要： A template inspection method for performing defect inspection of a template, by bringing a pattern formation surface of a template used to form a pattern close to a first fluid coated on a flat substrate, filling the first fluid into a pattern of the template, and by performing optical observation of the template in a state that the first fluid is sandwiched between the template and the substrate, wherein a difference between an optical constant of the first fluid and an optical constant of the template is larger than a difference between an optical constant of air and the optical constant of the template.
摘要翻译：一种用于对模板进行缺陷检查的模板检查方法，通过将用于形成图案的模板的图案形成表面靠近涂覆在平坦基板上的第一流体，将第一流体填充到模板的图案中，以及通过在第一流体夹在模板和基板之间的状态下进行模板的光学观察，其中第一流体的光学常数与模板的光学常数之间的差异大于模板的光学常数之间的差异空气和模板的光学常数。

69. 发明申请

US20120091370A1 IMPRINT MASK MANUFACTURING METHOD, IMPRINT MASK MANUFACTURING DEVICE, AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD 有权
标题翻译：印刷掩模制造方法，印刷掩模制造装置和半导体器件制造方法
公开(公告)号：US20120091370A1
公开(公告)日：2012-04-19
申请号：US13326612
申请日：2011-12-15
申请人： Masamitsu Itoh
发明人： Masamitsu Itoh
IPC分类号： G21K5/00
CPC分类号： G21K5/10 , B29C35/0894 , B29C37/0053 , B29C43/021 , B29C43/58 , B29C2043/025 , B29C2043/142 , B29C2043/3634 , B29C2043/5833 , B82Y10/00 , B82Y40/00 , G01B11/03 , G03F1/00 , G03F7/0002 , H01L21/02356
摘要： A pattern is formed on a mask substrate. Positional deviation information between an actual position of the pattern formed on the mask substrate and a design position decided at the time of designing the pattern is calculated. A heterogeneous layer of which a volume expands more greatly than that of surrounding mask substrate region is formed in a predetermined position within the mask substrate so that volume expansion of the heterogeneous layer according to the positional deviation information is achieved.
摘要翻译：在掩模基板上形成图案。计算形成在掩模基板上的图案的实际位置与设计图案时确定的设计位置之间的位置偏差信息。在掩模基板内的预定位置形成体积比周围掩模基板区域更大地膨胀的异质层，从而实现根据位置偏差信息的异质层的体积膨胀。

70. 发明授权

US08097539B2 Imprint mask manufacturing method for nanoimprinting 有权
标题翻译：纳米压印印刷掩模制造方法
公开(公告)号：US08097539B2
公开(公告)日：2012-01-17
申请号：US12350394
申请日：2009-01-08
申请人： Masamitsu Itoh
发明人： Masamitsu Itoh
IPC分类号： H01L21/311
CPC分类号： G21K5/10 , B29C35/0894 , B29C37/0053 , B29C43/021 , B29C43/58 , B29C2043/025 , B29C2043/142 , B29C2043/3634 , B29C2043/5833 , B82Y10/00 , B82Y40/00 , G01B11/03 , G03F1/00 , G03F7/0002 , H01L21/02356
摘要： A pattern is formed on a mask substrate. Positional deviation information between an actual position of the pattern formed on the mask substrate and a design position decided at the time of designing the pattern is calculated. A heterogeneous layer of which a volume expands more greatly than that of surrounding mask substrate region is formed in a predetermined position within the mask substrate so that volume expansion of the heterogeneous layer according to the positional deviation information is achieved.
摘要翻译：在掩模基板上形成图案。计算形成在掩模基板上的图案的实际位置与设计图案时确定的设计位置之间的位置偏差信息。在掩模基板内的预定位置形成体积比周围掩模基板区域更大地膨胀的异质层，从而实现根据位置偏差信息的异质层的体积膨胀。

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