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1. 发明授权

US07904851B2 Photomask manufacturing method and semiconductor device manufacturing method 有权
标题翻译：光掩模制造方法和半导体器件制造方法
公开(公告)号：US07904851B2
公开(公告)日：2011-03-08
申请号：US11878580
申请日：2007-07-25
申请人： Masamitsu Itoh , Takashi Hirano , Kazuya Fukuhara
发明人： Masamitsu Itoh , Takashi Hirano , Kazuya Fukuhara
IPC分类号： G06F17/50 , G03F1/00
CPC分类号： G06F17/5081 , G03F1/50
摘要： This invention discloses a photomask manufacturing method. A pattern dimensional map is generated by preparing a photomask in which a mask pattern is formed on a transparent substrate, and measuring a mask in-plane distribution of the pattern dimensions. A transmittance correction coefficient map is generated by dividing a pattern formation region into a plurality of subregions, and determining a transmittance correction coefficient for each of the plurality of subregions. The transmittance correction value of each subregion is calculated on the basis of the pattern dimensional map and the transmittance correction coefficient map. The transmittance of the transparent substrate corresponding to each subregion is changed on the basis of the transmittance correction value.
摘要翻译：本发明公开了一种光掩模制造方法。通过准备其中在透明基板上形成掩模图案并测量图案尺寸的掩模面内分布的光掩模来生成图案尺寸图。通过将图案形成区域划分为多个子区域，并且确定多个子区域中的每个子区域的透射率校正系数来生成透射率校正系数图。基于图案尺寸图和透射率校正系数图计算每个子区域的透射率校正值。基于透射率校正值改变对应于每个子区域的透明基板的透射率。

2. 发明申请

US20100209829A1 PHOTOMASK MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD 有权
标题翻译：光电子制造方法和半导体器件制造方法
公开(公告)号：US20100209829A1
公开(公告)日：2010-08-19
申请号：US12770062
申请日：2010-04-29
申请人： Masamitsu Itoh , Takashi Hirano , Kazuya Fukuhara
发明人： Masamitsu Itoh , Takashi Hirano , Kazuya Fukuhara
IPC分类号： G03F1/00
CPC分类号： G06F17/5081 , G03F1/50
摘要： This invention discloses a photomask manufacturing method. A pattern dimensional map is generated by preparing a photomask in which a mask pattern is formed on a transparent substrate, and measuring a mask in-plane distribution of the pattern dimensions. A transmittance correction coefficient map is generated by dividing a pattern formation region into a plurality of subregions, and determining a transmittance correction coefficient for each of the plurality of subregions. The transmittance correction value of each subregion is calculated on the basis of the pattern dimensional map and the transmittance correction coefficient map. The transmittance of the transparent substrate corresponding to each subregion is changed on the basis of the transmittance correction value.
摘要翻译：本发明公开了一种光掩模制造方法。通过准备其中在透明基板上形成掩模图案并测量图案尺寸的掩模面内分布的光掩模来生成图案尺寸图。通过将图案形成区域划分为多个子区域，并且确定多个子区域中的每个子区域的透射率校正系数来生成透射率校正系数图。基于图案尺寸图和透射率校正系数图计算每个子区域的透射率校正值。基于透射率校正值改变对应于每个子区域的透明基板的透射率。

3. 发明授权

US08407628B2 Photomask manufacturing method and semiconductor device manufacturing method 有权
公开(公告)号：US08407628B2
公开(公告)日：2013-03-26
申请号：US12770062
申请日：2010-04-29
申请人： Masamitsu Itoh , Takashi Hirano , Kazuya Fukuhara
发明人： Masamitsu Itoh , Takashi Hirano , Kazuya Fukuhara
IPC分类号： G06F17/50 , G03F1/00
CPC分类号： G06F17/5081 , G03F1/50
摘要： This invention discloses a photomask manufacturing method. A pattern dimensional map is generated by preparing a photomask in which a mask pattern is formed on a transparent substrate, and measuring a mask in-plane distribution of the pattern dimensions. A transmittance correction coefficient map is generated by dividing a pattern formation region into a plurality of subregions, and determining a transmittance correction coefficient for each of the plurality of subregions. The transmittance correction value of each subregion is calculated on the basis of the pattern dimensional map and the transmittance correction coefficient map. The transmittance of the transparent substrate corresponding to each subregion is changed on the basis of the transmittance correction value.

4. 发明申请

US20080026300A1 Photomask manufacturing method and semiconductor device manufacturing method 有权
标题翻译：光掩模制造方法和半导体器件制造方法
公开(公告)号：US20080026300A1
公开(公告)日：2008-01-31
申请号：US11878580
申请日：2007-07-25
申请人： Masamitsu Itoh , Takashi Hirano , Kazuya Fukuhara
发明人： Masamitsu Itoh , Takashi Hirano , Kazuya Fukuhara
IPC分类号： H01L21/02 , G03F1/00
CPC分类号： G06F17/5081 , G03F1/50
摘要： This invention discloses a photomask manufacturing method. A pattern dimensional map is generated by preparing a photomask in which a mask pattern is formed on a transparent substrate, and measuring a mask in-plane distribution of the pattern dimensions. A transmittance correction coefficient map is generated by dividing a pattern formation region into a plurality of subregions, and determining a transmittance correction coefficient for each of the plurality of subregions. The transmittance correction value of each subregion is calculated on the basis of the pattern dimensional map and the transmittance correction coefficient map. The transmittance of the transparent substrate corresponding to each subregion is changed on the basis of the transmittance correction value.
摘要翻译：本发明公开了一种光掩模制造方法。通过准备其中在透明基板上形成掩模图案并测量图案尺寸的掩模面内分布的光掩模来生成图案尺寸图。通过将图案形成区域划分为多个子区域，并且确定多个子区域中的每个子区域的透射率校正系数来生成透射率校正系数图。基于图案尺寸图和透射率校正系数图计算每个子区域的透射率校正值。基于透射率校正值改变对应于每个子区域的透明基板的透射率。

5. 发明申请

US20130179846A1 PHOTOMASK MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD 失效
标题翻译：光电子制造方法和半导体器件制造方法
公开(公告)号：US20130179846A1
公开(公告)日：2013-07-11
申请号：US13785604
申请日：2013-03-05
申请人： Masamitsu Itoh , Takashi Hirano , Kazuya Fukuhara
发明人： Masamitsu Itoh , Takashi Hirano , Kazuya Fukuhara
IPC分类号： G06F17/50
CPC分类号： G06F17/5081 , G03F1/50
摘要： This invention discloses a photomask manufacturing method. A pattern dimensional map is generated by preparing a photomask in which a mask pattern is formed on a transparent substrate, and measuring a mask in-plane distribution of the pattern dimensions. A transmittance correction coefficient map is generated by dividing a pattern formation region into a plurality of subregions, and determining a transmittance correction coefficient for each of the plurality of subregions. The transmittance correction value of each subregion is calculated on the basis of the pattern dimensional map and the transmittance correction coefficient map. The transmittance of the transparent substrate corresponding to each subregion is changed on the basis of the transmittance correction value.
摘要翻译：本发明公开了一种光掩模制造方法。通过准备其中在透明基板上形成掩模图案并测量图案尺寸的掩模面内分布的光掩模来生成图案尺寸图。通过将图案形成区域划分为多个子区域，并且确定多个子区域中的每个子区域的透射率校正系数来生成透射率校正系数图。基于图案尺寸图和透射率校正系数图计算每个子区域的透射率校正值。基于透射率校正值改变对应于每个子区域的透明基板的透射率。

6. 发明授权

US08759957B2 Film for use in manufacturing semiconductor device, method for producing semiconductor device and semiconductor device 有权
标题翻译：用于制造半导体器件的膜，用于制造半导体器件的方法和半导体器件
公开(公告)号：US08759957B2
公开(公告)日：2014-06-24
申请号：US12866108
申请日：2009-02-06
申请人： Takashi Hirano
发明人： Takashi Hirano
IPC分类号： H01L23/02
CPC分类号： H01L23/295 , C09J7/22 , C09J7/38 , C09J2203/326 , H01L21/6836 , H01L24/16 , H01L24/29 , H01L25/50 , H01L2221/68327 , H01L2224/0554 , H01L2224/05573 , H01L2224/13025 , H01L2224/16145 , H01L2224/16225 , H01L2224/27436 , H01L2224/29111 , H01L2224/32145 , H01L2224/32225 , H01L2224/73204 , H01L2224/83191 , H01L2225/06513 , H01L2225/06517 , H01L2225/06541 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01011 , H01L2924/01012 , H01L2924/01013 , H01L2924/01015 , H01L2924/01019 , H01L2924/0102 , H01L2924/01021 , H01L2924/01025 , H01L2924/01027 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01045 , H01L2924/01047 , H01L2924/0105 , H01L2924/01056 , H01L2924/01058 , H01L2924/01059 , H01L2924/01075 , H01L2924/01077 , H01L2924/01082 , H01L2924/01087 , H01L2924/0132 , H01L2924/014 , H01L2924/12044 , H01L2924/14 , H01L2924/15787 , H01L2924/30105 , H01L2924/00012 , H01L2924/3512 , H01L2924/00 , H01L2224/05599 , H01L2224/0555 , H01L2224/0556
摘要： A film for use in manufacturing a semiconductor device having at least one semiconductor element of the present invention is characterized by comprising: a base sheet having one surface; and a bonding layer provided on the one surface of the base sheet, the bonding layer being adapted to be bonded to the semiconductor element in the semiconductor device, the bonding layer being formed of a resin composition comprising a crosslinkable resin and a compound having flux activity. Further, it is preferred that in the film of the present invention, the semiconductor element is of a flip-chip type and has a functional surface, and the bonding layer is adapted to be bonded to the functional surface of the semiconductor element.
摘要翻译：用于制造具有本发明的至少一个半导体元件的半导体器件的薄膜的特征在于包括：具有一个表面的基片; 以及设置在所述基片的一个表面上的接合层，所述接合层适于与所述半导体器件中的所述半导体元件接合，所述接合层由包含可交联树脂和具有助焊剂活性的化合物的树脂组合物形成。此外，优选在本发明的膜中，半导体元件为倒装型，具有功能面，并且接合层适于与半导体元件的功能面接合。

7. 发明授权

US08530119B2 Positive photosensitive resin composition, cured film, protective film, interlayer insulating film, and semiconductor device and display element using the same 有权
标题翻译：正型感光性树脂组合物，固化膜，保护膜，层间绝缘膜，以及使用其的显示元件
公开(公告)号：US08530119B2
公开(公告)日：2013-09-10
申请号：US13321180
申请日：2009-05-20
申请人： Takashi Hirano , Toshio Banba , Shusaku Okamyo , Hiroaki Makabe
发明人： Takashi Hirano , Toshio Banba , Shusaku Okamyo , Hiroaki Makabe
IPC分类号： G03F7/023
CPC分类号： G03F7/0233 , G03F7/0226
摘要： A positive photosensitive resin composition includes (A) a polybenzoxazole precursor resin, (B) a photosensitive diazoquinone compound, (C) a hindered phenol antioxidant shown by the following general formula (1), and (D) a phenol compound shown by the following general formula (2). Formula (1) is: wherein R1 represents a hydrogen atom or an organic group having 1 to 4 carbon atoms, a is an integer from 1 to 3, and b is an integer from 1 to 3. Formula (2) is: wherein R2 represents a methylene group or a single bond, c is an integer from 1 to 3, and d is an integer from 1 to 3. A protective film, an interlayer insulating film, and a semiconductor device and a display element using the same are also disclosed.
摘要翻译：正型感光性树脂组合物包含（A）聚苯并恶唑前体树脂，（B）感光性重氮醌化合物，（C）下述通式（1）所示的受阻酚抗氧化剂，（D）下述通式通式（2）。式（1）为：式中，R 1表示氢原子或碳原子数1〜4的有机基团，a为1〜3的整数，b为1〜3的整数。式（2）表示亚甲基或单键，c为1〜3的整数，d为1〜3的整数。保护膜，层间绝缘膜及半导体装置以及使用该键的显示元件也是披露

8. 发明申请

US20130070888A1 METHOD OF REDUCING CORROSION OF NUCLEAR REACTOR STRUCTURAL MATERIAL 有权
标题翻译：减少核反应堆结构材料腐蚀的方法
公开(公告)号：US20130070888A1
公开(公告)日：2013-03-21
申请号：US13619377
申请日：2012-09-14
申请人： Seiji YAMAMOTO , Tadasu Yotsuyanagi , Nagayoshi Ichikawa , Tetsuo Oosato , Masato Okamura , Junichi Takagi , Kenji Yamazaki , Shunichi Suzuki , Kenro Takamori , Mitsuru Sambongi , Takeshi Shibano , Takashi Hirano , Yuichi Fukaya
发明人： Seiji YAMAMOTO , Tadasu Yotsuyanagi , Nagayoshi Ichikawa , Tetsuo Oosato , Masato Okamura , Junichi Takagi , Kenji Yamazaki , Shunichi Suzuki , Kenro Takamori , Mitsuru Sambongi , Takeshi Shibano , Takashi Hirano , Yuichi Fukaya
IPC分类号： G21C9/00
CPC分类号： G21C9/00 , G21C3/324 , G21Y2002/103 , Y02E30/40
摘要： In a method of reducing corrosion of a material constituting a nuclear reactor structure, an electrochemical corrosion potential is controlled by injecting a solution or a suspension containing a substance generating an excitation current by an action of at least one of radiation, light, and heat existing in a nuclear reactor, or a metal or a metallic compound forming the substance generating the excitation current under the condition in the nuclear reactor to allow the substance generating the excitation current to adhere to the surface of the nuclear reactor structural material, and by injecting hydrogen in cooling water of the nuclear reactor while controlling the hydrogen concentration in a feed water.
摘要翻译：在减少构成核反应堆结构的材料的腐蚀的方法中，电化学腐蚀电位通过注入含有产生激发电流的物质的溶液或悬浮液来控制，该溶液或悬浮液通过存在辐射，光和热中的至少一种的作用或在核反应堆中形成产生激励电流的物质的金属或金属化合物，以使产生激发电流的物质附着到核反应堆结构材料的表面，并通过注入氢同时控制供水中的氢浓度。

9. 发明授权

US08209529B2 Authentication system, network line concentrator, authentication method and authentication program 失效
标题翻译：认证系统，网络集线器，认证方式和认证方案
公开(公告)号：US08209529B2
公开(公告)日：2012-06-26
申请号：US11179602
申请日：2005-07-13
申请人： Takashi Hirano , Atsushi Nunome , Hiroaki Hirata , Kiyoshi Shibayama
发明人： Takashi Hirano , Atsushi Nunome , Hiroaki Hirata , Kiyoshi Shibayama
IPC分类号： H04L29/06
CPC分类号： H04L63/08
摘要： A DHCP server 8 dispenses an IP address in response to a request from a terminal equipment 1. An authentication server 3 receives an authentication frame transmitted from the terminal equipment 1 using the dispensed IP address as a sender address and authenticates the terminal equipment 1. Upon completion of authentication, the authentication server 3 informs a registration information database 22 of an authentication hub 2 of communication permission for the terminal equipment 1. In the authentication hub 2, a frame receiving circuit 21 receives a transmission frame transmitted from the terminal equipment 1. The authentication hub 2 refers to the registration information database 22 on the basis of sender information of the transmission frame, determines transmission, rewriting-and-transmission, or discarding for the frame, and sends the transmission frame to a transmission buffer 23 if transmission or rewriting-and-transmission is permitted for the frame.
摘要翻译： DHCP服务器8响应于来自终端设备1的请求来分配IP地址。认证服务器3使用分配的IP地址作为发送者地址接收从终端设备1发送的认证帧，并对终端设备1进行认证。认证服务器3向认证中心2的登记信息数据库22通知终端设备1的通信许可。在认证集线器2中，帧接收电路21接收从终端设备1发送的传输帧。认证集线器2基于发送帧的发送者信息来参考注册信息数据库22，确定发送，重写和发送，或丢弃该帧，并且如果发送或发送，则将发送帧发送到发送缓冲器23 框架允许重写传输。

10. 发明申请

US20120108012A1 FILM FOR SEMICONDUCTOR AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD 审中-公开
标题翻译：半导体和半导体器件制造方法
公开(公告)号：US20120108012A1
公开(公告)日：2012-05-03
申请号：US13382593
申请日：2010-05-31
申请人： Hiroyuki Yasuda , Takashi Hirano , Naoya Oda
发明人： Hiroyuki Yasuda , Takashi Hirano , Naoya Oda
IPC分类号： B32B3/00 , B32B7/02 , B32B3/02 , H01L21/78 , B32B5/00
CPC分类号： H01L24/27 , C09J7/38 , C09J2201/36 , C09J2203/326 , H01L21/6836 , H01L24/29 , H01L24/48 , H01L24/73 , H01L24/83 , H01L2221/68327 , H01L2221/68336 , H01L2221/68359 , H01L2224/274 , H01L2224/27436 , H01L2224/2919 , H01L2224/32225 , H01L2224/32245 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/73265 , H01L2224/83191 , H01L2224/838 , H01L2224/92247 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01019 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01059 , H01L2924/01061 , H01L2924/01078 , H01L2924/01082 , H01L2924/014 , H01L2924/0665 , H01L2924/10253 , H01L2924/10329 , H01L2924/15311 , H01L2924/15787 , H01L2924/181 , H01L2924/30105 , Y10T428/15 , Y10T428/24777 , Y10T428/2495 , Y10T428/24983 , Y10T428/265 , H01L2924/00 , H01L2924/3512 , H01L2924/00012 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A film for semiconductor includes a support film, a second adhesive layer, a first adhesive layer and a bonding layer which are laminated together in this order. This film for semiconductor is configured so that it supports a semiconductor wafer laminated on the bonding layer thereof when the semiconductor wafer is diced and the bonding layer is selectively peeled off from the first adhesive layer when the semiconductor elements obtained by the dicing are picked up. This film for semiconductor is characterized in that an average thickness of the second adhesive layer is in the range of 20 to 100 μm. This makes it possible to control cutting lines formed during the dicing so as to locate distal ends thereof within the first adhesive layer easily and reliably and to prevent defects which would be generated when the cutting lines come down to the support film.
摘要翻译：半导体膜包括依次层叠在一起的支撑膜，第二粘合层，第一粘合层和接合层。这种半导体膜被配置为当半导体晶片被切割时，它支撑层叠在其接合层上的半导体晶片，并且当通过切割获得的半导体元件被拾取时，从第一粘合剂层选择性地剥离接合层。该半导体膜的特征在于，第二粘合层的平均厚度在20〜100μm的范围内。这使得可以控制在切割期间形成的切割线，以便容易且可靠地将其远端定位在第一粘合层内，并且防止当切割线下降到支撑膜时会产生的缺陷。

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