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61. 发明授权

US06303551B1 Cleaning solution and method for cleaning semiconductor substrates after polishing of cooper film 有权
标题翻译：用于清洗铜膜后的半导体衬底的清洗液和清洗方法
公开(公告)号：US06303551B1
公开(公告)日：2001-10-16
申请号：US09568793
申请日：2000-05-09
申请人： Xu Li , Yuexing Zhao , Diane J. Hymes , John M. de Larios
发明人： Xu Li , Yuexing Zhao , Diane J. Hymes , John M. de Larios
IPC分类号： B08B500
CPC分类号： H01L21/02074 , C11D7/08 , C11D7/265 , C11D11/0047 , C23G1/103
摘要： A cleaning solution for cleaning a semiconductor substrate is formed by mixing an amount of citric acid and an amount of ammonia in deionized water. In one embodiment, the amount of citric acid is in a range from about 0.18% by weight to about 0.22% by weight and the amount of ammonia is in a range from about 0.0225% by weight to about 0.0275% by weight, and the cleaning solution has a pH of about 4. A method for cleaning a semiconductor substrate having a polished copper layer in which a concentrated cleaning solution is mixed with deionized water proximate to a scrubbing apparatus also is described.
摘要翻译：通过将一定量的柠檬酸和一定量的氨在去离子水中混合来形成用于清洁半导体衬底的清洁溶液。在一个实施方案中，柠檬酸的量在约0.18重量％至约0.22重量％的范围内，氨的量在约0.0225重量％至约0.0275重量％的范围内，并且清洁溶液的pH为约4.描述了一种清洗具有抛光铜层的半导体衬底的方法，其中浓缩清洗溶液与靠近洗涤装置的去离子水混合。

62. 发明授权

US08671959B2 Method and apparatus for cleaning a substrate using non-newtonian fluids 有权
标题翻译：使用非牛顿流体清洗基材的方法和设备
公开(公告)号：US08671959B2
公开(公告)日：2014-03-18
申请号：US13252859
申请日：2011-10-04
申请人： John M. de Larios , Mike Ravkin , Jeffrey Farber , Mikhail Korolik , Fred C. Redeker
发明人： John M. de Larios , Mike Ravkin , Jeffrey Farber , Mikhail Korolik , Fred C. Redeker
IPC分类号： B08B3/00
CPC分类号： H01L21/67057 , B08B3/003 , B08B7/0014 , C11D7/5004 , C11D11/0047 , H01L21/02057 , H01L21/67051 , Y10S134/902
摘要： An apparatus for cleaning a substrate includes an application unit having a top inlet conduit and a bottom plate section. The top inlet conduit has an opening for receiving a non-Newtonian fluid and the bottom plate section has an opening through which the non-Newtonian fluid can flow. The bottom plate section is perpendicular to the top inlet conduit, and a surface of the bottom plate section is disposed above and parallel to a surface of a substrate so as to define a gap between the surface of the bottom plate section and the surface of the substrate. The defined gap has a height configured to create a flow of the non-Newtonian fluid in which a portion of the flow exhibits plug flow, and the plug flow moves over the surface of the substrate to remove particles from the surface of the substrate.
摘要翻译：用于清洁基板的装置包括具有顶部入口导管和底板部分的施加单元。顶部入口导管具有用于接收非牛顿流体的开口，底板部分具有非牛顿流体可以流过的开口。底板部分垂直于顶部入口导管，并且底板部分的表面设置在基板的表面上方并平行于基板的表面，以便限定底板部分的表面与底板部分的表面之间的间隙基质。限定的间隙具有构造成产生非牛顿流体的流动的高度，其中流体的一部分显示出塞子流动，并且塞子流动在衬底的表面上移动以从衬底的表面移除颗粒。

63. 发明授权

US08535451B2 Method and apparatus for cleaning semiconductor wafers using compressed and/or pressurized foams, bubbles, and/or liquids 失效
标题翻译：使用压缩和/或加压泡沫，气泡和/或液体清洁半导体晶片的方法和设备
公开(公告)号：US08535451B2
公开(公告)日：2013-09-17
申请号：US12240300
申请日：2008-09-29
申请人： John M. de Larios , Mike Ravkin , Jeffrey Farber , Mikhail Korolik , Fritz Redeker , Aleksander Owczarz
发明人： John M. de Larios , Mike Ravkin , Jeffrey Farber , Mikhail Korolik , Fritz Redeker , Aleksander Owczarz
IPC分类号： B08B1/04
CPC分类号： B08B3/003 , H01L21/67028 , H01L21/67046 , Y10S134/902
摘要： An apparatus and method are disclosed in which a semiconductor substrate having a surface containing contaminants is cleaned or otherwise subjected to chemical treatment using a foam. The semiconductor wafer is supported either on a stiff support (or a layer of foam) and foam is provided on the opposite surface of the semiconductor wafer while the semiconductor wafer is supported. The foam contacting the semiconductor wafer is pressurized using a form to produce a jammed foam. Relative movement between the form and the semiconductor wafer. such as oscillation parallel and/or perpendicular to the top surface of the semiconductor wafer. is then induced while the jammed foam is in contact with the semiconductor wafer to remove the undesired contaminants and/or otherwise chemically treat the surface of the semiconductor wafer using the foam.
摘要翻译：公开了一种装置和方法，其中具有含有污染物的表面的半导体衬底被清洁或以其它方式用泡沫进行化学处理。半导体晶片被支撑在刚性支撑件（或泡沫层）上，并且在半导体晶片被支撑的同时在半导体晶片的相对表面上提供泡沫。接触半导体晶片的泡沫使用形式加压以产生卡住的泡沫。形式与半导体晶圆之间的相对移动。例如平行于和/或垂直于半导体晶片的顶表面的振荡。然后在卡住的泡沫与半导体晶片接触的同时引发，以除去不期望的污染物和/或以其它方式化学处理使用泡沫的半导体晶片的表面。

64. 发明申请

US20120017950A1 METHOD AND APPARATUS FOR CLEANING A SUBSTRATE USING NON-NEWTONIAN FLUIDS 有权
标题翻译：用于清洁使用非牛顿流体的基材的方法和装置
公开(公告)号：US20120017950A1
公开(公告)日：2012-01-26
申请号：US13252859
申请日：2011-10-04
申请人： John M. de Larios , Mike Ravkin , Jeffrey Farber , Mikhail Korolik , Fred C. Redeker
发明人： John M. de Larios , Mike Ravkin , Jeffrey Farber , Mikhail Korolik , Fred C. Redeker
IPC分类号： B08B3/04
CPC分类号： H01L21/67057 , B08B3/003 , B08B7/0014 , C11D7/5004 , C11D11/0047 , H01L21/02057 , H01L21/67051 , Y10S134/902
摘要： A method for cleaning a substrate is provided. In this method, a flow of non-Newtonian fluid is provided where at least a portion of the flow exhibits plug flow. To remove particles from a surface of the substrate, the surface of the substrate is placed in contact with the portion of the flow that exhibits plug flow such that the portion of the flow exhibiting plug flow moves over the surface of the substrate. Additional methods and apparatuses for cleaning a substrate also are described.
摘要翻译：提供一种清洗基板的方法。在该方法中，提供了非牛顿流体的流动，其中至少一部分流动呈现出流动。为了从基板的表面去除颗粒，将基板的表面与显示塞子流的流动部分接触，使得显示塞子流的流动部分在基板的表面上移动。还描述了用于清洁基板的附加方法和装置。

65. 发明授权

US08043441B2 Method and apparatus for cleaning a substrate using non-Newtonian fluids 有权
标题翻译：使用非牛顿流体清洗基材的方法和设备
公开(公告)号：US08043441B2
公开(公告)日：2011-10-25
申请号：US11153957
申请日：2005-06-15
申请人： John M. de Larios , Mike Ravkin , Jeffrey Farber , Mikhail Korolik , Fred C. Redeker
发明人： John M. de Larios , Mike Ravkin , Jeffrey Farber , Mikhail Korolik , Fred C. Redeker
IPC分类号： B08B3/00
CPC分类号： H01L21/67057 , B08B3/003 , B08B7/0014 , C11D7/5004 , C11D11/0047 , H01L21/02057 , H01L21/67051 , Y10S134/902
摘要： A method for cleaning a substrate is provided. In this method, a flow of non-Newtonian fluid is provided where at least a portion of the flow exhibits plug flow. To remove particles from a surface of the substrate, the surface of the substrate is placed in contact with the portion of the flow that exhibits plug flow such that the portion of the flow exhibiting plug flow moves over the surface of the substrate. Additional methods and apparatuses for cleaning a substrate also are described.
摘要翻译：提供一种清洗基板的方法。在该方法中，提供了非牛顿流体的流动，其中至少一部分流动呈现出流动。为了从基板的表面去除颗粒，将基板的表面与显示塞子流的流动部分接触，使得显示塞子流的流动部分在基板的表面上移动。还描述了用于清洁基板的附加方法和装置。

66. 发明申请

US20110061687A1 Apparatus for Contained Chemical Surface Treatment 审中-公开
标题翻译：含化学表面处理装置
公开(公告)号：US20110061687A1
公开(公告)日：2011-03-17
申请号：US12949762
申请日：2010-11-18
申请人： Katrina Mikhaylichenko , Mike Ravkin , Fritz Redeker , John M. de Larios , Erik M. Freer , Mikhail Korolik
发明人： Katrina Mikhaylichenko , Mike Ravkin , Fritz Redeker , John M. de Larios , Erik M. Freer , Mikhail Korolik
IPC分类号： B08B3/00
CPC分类号： H01L21/02057 , C25D5/34 , C25D7/12 , H01L21/288 , H01L21/67051 , H01L21/67057 , H01L21/6708 , H01L21/67086 , H01L21/76841
摘要： Apparatuses for preparing a surface of a substrate using a proximity head includes a carrier to hold and move the substrate along an axis and a proximity head having a head surface with a plurality of outlet ports defined thereon. The proximity head is defined to be positioned proximate and over the carrier and the surface of the substrate. A length of the head surface of the proximity head is defined to be greater than a diameter of the substrate and at least partially overlapping over the carrier when the substrate is present. The proximity head includes a first set of outlet ports in a first region defining a first applicator that is configured to apply a non-Newtonian fluid between a surface of the carrier and the head surface of the proximity head. A second set of outlet ports in a second region of the proximity head defines a second applicator that is configured to apply a first chemistry to the surface of the substrate when present. The second region is adjacent to the first region. A third set of outlet ports in a third region of the proximity head defines a third applicator that is configured to apply the non-Newtonian fluid between the head surface of the proximity head and the surface of the substrate when present. The third region is defined adjacent to the second region. A fourth set of outlet ports is defined in the second region of the proximity head to substantially remove the first chemistry from the surface of the substrate when present.
摘要翻译：用于使用接近头来制备基底表面的装置包括：载体，用于沿着轴保持和移动基底;以及接近头，具有头表面，其上限定有多个出口。接近头被限定为位于载体和基底的表面附近和上方。接近头部的头表面的长度被限定为大于衬底的直径，并且当衬底存在时至少部分地重叠在载体上。邻近头部包括在第一区域中的第一组出口端口，所述第一区域限定第一施用器，其被构造成在载体的表面和邻近头部的头部表面之间施加非牛顿流体。在邻近头部的第二区域中的第二组出口端口限定第二施加器，其被配置为当存在时将第一化学物质施加到衬底的表面。第二区域与第一区域相邻。接近头部的第三区域中的第三组出口限定了第三施加器，其被配置为当存在时将非牛顿流体施加在邻近头部的头部表面和基底表面之间。第三区域被定义为与第二区域相邻。第四组出口端口限定在邻近头部的第二区域中，以在存在时从衬底的表面基本上移除第一化学物质。

67. 发明申请

US20100317556A1 Two-Phase Substrate Cleaning Material 失效
标题翻译：两相基材清洗材料
公开(公告)号：US20100317556A1
公开(公告)日：2010-12-16
申请号：US12862072
申请日：2010-08-24
申请人： Mikhail Korolik , Erik M. Freer , John M. de Larios , Katrina Mikhaylichenko , Mike Ravkin , Fritz Redeker
发明人： Mikhail Korolik , Erik M. Freer , John M. de Larios , Katrina Mikhaylichenko , Mike Ravkin , Fritz Redeker
IPC分类号： C11D3/43
CPC分类号： C11D11/0047 , B08B7/02 , C11D1/146 , C11D3/2079 , C11D9/02 , C11D17/0013 , C11D17/0017 , C23G1/18 , G03F7/423 , H01L21/02052 , H01L21/31133 , H01L21/6708 , H01L21/67086
摘要： A cleaning compound is disclosed for removing particulate contaminants from a semiconductor substrate surface. The cleaning compound includes a liquid and carboxylic acid solid components dispersed in a substantially uniform manner in the liquid. A concentration of the carboxylic acid solid components in the liquid exceeds a solubility limit of the carboxylic acid solid components in the liquid. In one embodiment, a concentration of the carboxylic acid solid components in the liquid is within a range extending from about 3 percent by weight to about 5 percent by weight. In one embodiment, the carboxylic acid solid components are defined by a carbon number of at least four. The carboxylic acid solid components are defined to interact with the particulate contaminants on the semiconductor substrate surface to remove the particulate contaminants from the semiconductor substrate surface. The cleaning compound is viscous and may be formed as a gel.
摘要翻译：公开了用于从半导体衬底表面去除微粒污染物的清洁化合物。清洁化合物包括以基本均匀的方式分散在液体中的液体和羧酸固体组分。液体中羧酸固体组分的浓度超过了液体中羧酸固体组分的溶解度极限。在一个实施方案中，液体中羧酸固体组分的浓度在约3重量％至约5重量％的范围内。在一个实施方案中，羧酸固体组分由至少四个的碳数定义。羧酸固体组分被定义为与半导体衬底表面上的颗粒污染物相互作用以从半导体衬底表面去除颗粒污染物。清洁化合物是粘稠的并且可以形成为凝胶。

68. 发明授权

US07416370B2 Method and apparatus for transporting a substrate using non-Newtonian fluid 失效
标题翻译：使用非牛顿流体输送基材的方法和装置
公开(公告)号：US07416370B2
公开(公告)日：2008-08-26
申请号：US11154129
申请日：2005-06-15
申请人： John M. de Larios , Mike Ravkin , John Parks , Mikhail Korolik , Fred C. Redeker
发明人： John M. de Larios , Mike Ravkin , John Parks , Mikhail Korolik , Fred C. Redeker
IPC分类号： B65G51/16
CPC分类号： H01L21/67784 , H01L21/67057
摘要： A method for transporting a substrate is provided. In this method, a non-Newtonian fluid is provided and the substrate is suspended in the non-Newtonian fluid. The non-Newtonian fluid is capable of supporting the substrate. Thereafter, a supply force is applied on the non-Newtonian fluid to cause the non-Newtonian fluid to flow, whereby the flow is capable of moving the substrate along a direction of the flow. Apparatuses and systems for transporting the substrate using the non-Newtonian fluid also are described.
摘要翻译：提供了一种输送基板的方法。在该方法中，提供了非牛顿流体，并将基底悬挂在非牛顿流体中。非牛顿流体能够支撑基底。此后，向非牛顿流体施加供应力以使非牛顿流体流动，由此流动能够沿着流动方向移动基底。还描述了使用非牛顿流体输送基底的装置和系统。

69. 发明授权

US07192488B2 Methods and systems for processing a bevel edge of a substrate using a dynamic liquid meniscus 失效
标题翻译：使用动态液体弯月面处理衬底的斜边缘的方法和系统
公开(公告)号：US07192488B2
公开(公告)日：2007-03-20
申请号：US11292490
申请日：2005-12-01
申请人： Carl A. Woods , James P. Garcia , John M. de Larios
发明人： Carl A. Woods , James P. Garcia , John M. de Larios
IPC分类号： B08B3/00 , C23G1/00
CPC分类号： B08B3/04 , H01L21/67028 , H01L21/67034 , H01L21/67051 , Y10S134/902
摘要： A system and method for processing an edge of a substrate includes an edge roller and a first proximity head. The first proximity head being mounted on the edge roller. The first proximity head capable of forming a meniscus and including a concave portion and multiple ports opening into the concave portion. The concave portion being capable of receiving an edge of a substrate and the ports including at least one process liquid injection port, at least one vacuum port and at least one surface tension control port.
摘要翻译：用于处理衬底的边缘的系统和方法包括边缘辊和第一邻近头。第一接近头安装在边缘辊上。第一接近头部能够形成弯液面并且包括凹入部分和通向凹部的多个端口。所述凹部能够容纳衬底的边缘，并且所述端口包括至少一个处理液体注入端口，至少一个真空端口和至少一个表面张力控制端口。

70. 发明授权

US07000622B2 Methods and systems for processing a bevel edge of a substrate using a dynamic liquid meniscus 失效
公开(公告)号：US07000622B2
公开(公告)日：2006-02-21
申请号：US10603427
申请日：2003-06-24
申请人： Carl A. Woods , James P. Garcia , John M. de Larios
发明人： Carl A. Woods , James P. Garcia , John M. de Larios
IPC分类号： B08B3/00
CPC分类号： B08B3/04 , H01L21/67028 , H01L21/67034 , H01L21/67051 , Y10S134/902
摘要： A system and method for processing an edge of a substrate includes an edge roller and a first proximity head. The first proximity head being mounted on the edge roller. The first proximity head capable of forming a meniscus and including a concave portion and multiple ports opening into the concave portion. The concave portion being capable of receiving an edge of a substrate and the ports including at least one process liquid injection port, at least one vacuum port and at least one surface tension control port.

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