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61. 发明授权

US06261955B1 Application of vapor phase HFACAC-based compound for use in copper decontamination and cleaning processes 失效
标题翻译：应用气相HFACAC基化合物用于铜去污和清洗过程
公开(公告)号：US06261955B1
公开(公告)日：2001-07-17
申请号：US09618262
申请日：2000-07-18
申请人： Yakub Aliyu , Simon Chooi , Mei Sheng Zhou , John Leonard Sudijono , Subhash Gupta , Sudipto Ranendra Roy , Paul Kwok Keung Ho , Yi Xu
发明人： Yakub Aliyu , Simon Chooi , Mei Sheng Zhou , John Leonard Sudijono , Subhash Gupta , Sudipto Ranendra Roy , Paul Kwok Keung Ho , Yi Xu
IPC分类号： H01L2144
CPC分类号： H01L21/02046 , C23F1/12 , H01L21/02079 , Y10S438/906
摘要： An effective copper decontamination method in the fabrication of integrated circuits is achieved. An organic-based HFACAC decontamination compound in vapor phase is sprayed over elemental copper found on equipment or tools or as a spill wherein the compound reacts with all of the elemental copper and forms a volatile compound that can be flushed away thereby completing copper decontamination.
摘要翻译：实现了集成电路制造中有效的铜去污方法。蒸气相中的基于有机的HFACAC去污化合物喷洒在设备或工具上发现的元素铜上，或作为溢出物喷洒，其中化合物与所有元素铜反应并形成可被冲洗掉的挥发性化合物，从而完成铜去污。

62. 发明授权

US6124194A Method of fabrication of anti-fuse integrated with dual damascene process 有权
标题翻译：与双镶嵌工艺集成的抗熔丝的制造方法
公开(公告)号：US6124194A
公开(公告)日：2000-09-26
申请号：US439365
申请日：1999-11-15
申请人： Kai Shao , Yi Xu , Cerdin Lee , Shao-Fu Sanford Chu
发明人： Kai Shao , Yi Xu , Cerdin Lee , Shao-Fu Sanford Chu
IPC分类号： H01L21/768 , H01L23/525 , H07L29/00
CPC分类号： H01L21/7681 , H01L23/5252 , H01L2924/0002
摘要： A method of fabricating an anti-fuse module and dual damascene interconnect structure comprises the following steps. A semiconductor structure having at least two exposed metal lines covered by a first dielectric layer is provided. A first metal line is within an anti-fuse area and a second metal line is within an interconnect area. A first metal via is formed within the first dielectric layer within the anti-fuse area with the first metal via contacting the first metal line. A SiN layer is deposited over the first dielectric layer and the first metal via. The SiN layer is patterned to form at least two openings. A first opening exposes the first metal via, and a second opening exposes a portion of the first dielectric layer above the second metal line. A fusing element layer is deposited and patterned over the patterned SiN layered structure to form a fusing element over the first metal via. Simultaneously, an anti-fuse metal line is formed over the fusing element to form an anti-fuse module within the anti-fuse area, and a dual damascene interconnect is formed over, and contacting with, the second metal line and within the interconnect area.
摘要翻译：一种制造抗熔丝模块和双镶嵌互连结构的方法包括以下步骤。提供具有被第一介电层覆盖的至少两个暴露的金属线的半导体结构。第一金属线在反熔丝区内，第二金属线在互连区内。第一金属通孔形成在反熔丝区域内的第一电介质层内，第一金属通孔接触第一金属线。在第一介电层和第一金属通孔上沉积SiN层。图案化SiN层以形成至少两个开口。第一开口暴露第一金属通孔，第二开口暴露第二电介质层的第二金属线上方的一部分。在图案化的SiN层状结构上沉积并图案化定影元件层，以在第一金属通孔之上形成定影元件。同时，在熔断元件上方形成抗熔丝金属线，以在反熔丝区域内形成反熔丝模块，并且在第二金属线之间和互连区内形成双面镶嵌互连。

63. 发明申请

US20220255833A1 DEVICE CLUSTERING 有权
公开(公告)号：US20220255833A1
公开(公告)日：2022-08-11
申请号：US17731719
申请日：2022-04-28
申请人： Zahra Ferdowsi , Michael Cieslak , Michael David Marr , Aysegul Cansizoglu , Xiaolin Shi , Hussein Mehanna , Caleb Ogden , Yi Xu
发明人： Zahra Ferdowsi , Michael Cieslak , Michael David Marr , Aysegul Cansizoglu , Xiaolin Shi , Hussein Mehanna , Caleb Ogden , Yi Xu
IPC分类号： H04L43/55 , H04L67/125 , H04L67/1087 , H04L41/50
摘要： Clustering a plurality of client devices running an application as a function of a data structure such that the plurality of client devices are each assigned a cluster. Client devices having similar performance metrics are assigned the same cluster. An operation of the application is modified as a function of the performance metrics of the client device. The modification of application operation is performed by turning certain features of the application on and off using a rule based on device cluster.

64. 发明授权

US11194237B2 Projector 有权
公开(公告)号：US11194237B2
公开(公告)日：2021-12-07
申请号：US16198749
申请日：2018-11-21
申请人： Yi Xu
发明人： Yi Xu
IPC分类号： G03B21/16 , G02B27/30 , G03B21/00 , G03B21/20 , G02B27/28
摘要： The invention discloses a novel projector, comprising a sealed shell of electronic projector, an illumination system and a LED light source system, wherein the sealed shell is provided with an optical and internal circulation cooling assembly inside by area; the optical assembly comprises the projector working assembly. The invention is inside a sealed shell; the cold air far below normal temperature generated by semiconductor refrigeration piece takes away the heat on optical device, improving the heat dissipation efficiency. Simultaneously, because the cold air is inside a sealed shell, the optical device can be placed in a dust-free environment. The polarized light conversion prism converts the useless P light in conventional projector imagining into the useful S light, improving the light utilization, and increasing the brightness of projection at the same power. The LED light source is collimated by the collimating lens to meet PCS conversion requirement for polarized light converter.

65. 发明授权

US08659971B2 Word-line voltage regulating circuit and single power supply memory 有权
标题翻译：字线调压电路和单电源存储器
公开(公告)号：US08659971B2
公开(公告)日：2014-02-25
申请号：US13541600
申请日：2012-07-03
申请人： Lei Wang , Yi Xu , Xiaojin Guan
发明人： Lei Wang , Yi Xu , Xiaojin Guan
IPC分类号： G11C7/00
CPC分类号： G11C16/12 , G11C5/145 , G11C8/08
摘要： A word-line voltage regulating circuit and a single power supply memory are disclosed. The word-line voltage regulating circuit includes: a charge pump for raising an input voltage to a desired value and outputting the raised input voltage as an output voltage; a controller for inputting a refresh signal to the charge pump according to the output voltage of the charge pump; and a comparator for inputting a feedback signal to the charge pump according to a comparison result between the output voltage of the charge pump and a reference voltage. The charge pump works under control of the refresh signal when the memory is in an active mode, and works under control of the feedback signal when the memory is in a standby mode. The word-line voltage regulating circuit can effectively reduce the power consumption and can meet the requirement for proportional scale-down of integrated circuits.
摘要翻译：公开了一种字线电压调节电路和单电源存储器。字线电压调节电路包括：用于将输入电压提高到期望值并输出升高的输入电压作为输出电压的电荷泵; 控制器，用于根据电荷泵的输出电压向电荷泵输入刷新信号; 以及比较器，用于根据电荷泵的输出电压和参考电压之间的比较结果将反馈信号输入到电荷泵。当存储器处于活动模式时，电荷泵在刷新信号的控制下工作，并且当存储器处于待机模式时在反馈信号的控制下工作。字线电压调节电路可以有效降低功耗，满足集成电路比例缩小的要求。

66. 外观设计

USD633443S1 Portable generator 有权
标题翻译：便携式发电机
公开(公告)号：USD633443S1
公开(公告)日：2011-03-01
申请号：US29278786
申请日：2007-04-10
申请人： Junxing Wang , Chengcun Wang , Yi Xu , Qi Chen , Dehua Zhou , Jisheng Xia , Hongchun Ding , Chaojian Zhang
设计人： Junxing Wang , Chengcun Wang , Yi Xu , Qi Chen , Dehua Zhou , Jisheng Xia , Hongchun Ding , Chaojian Zhang

67. 发明授权

US07544780B2 Prokaryotic collagen-like proteins and uses thereof 有权
标题翻译：原核胶原蛋白及其用途
公开(公告)号：US07544780B2
公开(公告)日：2009-06-09
申请号：US11800288
申请日：2007-05-04
申请人： Magnus Höök , Slawomir Lukomski , Yi Xu
发明人： Magnus Höök , Slawomir Lukomski , Yi Xu
IPC分类号： A61K38/17 , C07K14/00
CPC分类号： C07K14/78
摘要： The present invention provides recombinant triple helical proteins or collagen-like proteins comprising a prokaryotic protein or one or more domains of a prokaryotic protein comprising a collagen-like peptide sequence of repeated Gly-Xaa-Yaa triplets and, optionally, one or more domains from a mammalian collagen. Also provided are expression vectors and host cells containing the expression vectors to produce these recombinant proteins and methods of production for the same. Additionally, antibodies are provided that are directed against a recombinant collagen-like protein that, preferably, binds an integrin. Furthermore, a method of screening for potential therapeutic compounds that inhibit the integrin-binding or -interacting activities of recombinant collagen-like proteins.
摘要翻译：本发明提供重组三螺旋蛋白或胶原样蛋白，其包含原核蛋白或原核蛋白的一个或多个结构域，其包含重复Gly-Xaa-Yaa三联体的胶原样肽序列和任选的一个或多个结构域哺乳动物胶原蛋白。还提供了含有表达载体以产生这些重组蛋白的表达载体和宿主细胞及其生产方法。此外，提供针对重组胶原样蛋白的抗体，其优选结合整联蛋白。此外，筛选抑制重组胶原样蛋白的整联蛋白结合或相互作用活性的潜在治疗化合物的方法。

68. 发明授权

US06987321B2 Copper diffusion deterrent interface 失效
标题翻译：铜扩散阻止界面
公开(公告)号：US06987321B2
公开(公告)日：2006-01-17
申请号：US10718865
申请日：2003-11-21
申请人： Simon Chooi , Yakub Aliyu , Mei Sheng Zhou , John Leonard Sudijono , Subbash Gupta , Sudipto Ranendra Roy , Paul Kwok Keung Ho , Yi Xu
发明人： Simon Chooi , Yakub Aliyu , Mei Sheng Zhou , John Leonard Sudijono , Subbash Gupta , Sudipto Ranendra Roy , Paul Kwok Keung Ho , Yi Xu
IPC分类号： H01L23/48
CPC分类号： H01L21/76844 , H01L21/28556 , H01L21/31111 , H01L21/314 , H01L21/76807
摘要： Method and product for forming a dual damascene interconnect structure, wherein depositing a copper sulfide interface layer as sidewalls to the opening deters migration or diffusing of copper ions into the dielectric material.
摘要翻译：用于形成双镶嵌互连结构的方法和产品，其中将铜硫化物界面层作为开口的侧壁沉积阻止铜离子迁移或扩散到电介质材料中。

69. 发明授权

US06705512B2 Method of application of conductive cap-layer in flip-chip, cob, and micro metal bonding 有权
标题翻译：导电盖层在倒装芯片，芯棒和微金属接合中的应用方法
公开(公告)号：US06705512B2
公开(公告)日：2004-03-16
申请号：US10099283
申请日：2002-03-15
申请人： Kwok Keung Paul Ho , Simon Chooi , Yi Xu , Yakub Aliyu , Mei Sheng Zhou , John Leonard Sudijono , Subhash Gupta , Sudipto Ranendra Roy
发明人： Kwok Keung Paul Ho , Simon Chooi , Yi Xu , Yakub Aliyu , Mei Sheng Zhou , John Leonard Sudijono , Subhash Gupta , Sudipto Ranendra Roy
IPC分类号： B23K3102
CPC分类号： H01L24/85 , B23K20/007 , H01L24/03 , H01L24/05 , H01L24/45 , H01L24/48 , H01L2224/04042 , H01L2224/05073 , H01L2224/05124 , H01L2224/05147 , H01L2224/05166 , H01L2224/05184 , H01L2224/05187 , H01L2224/05624 , H01L2224/05647 , H01L2224/45124 , H01L2224/45144 , H01L2224/48463 , H01L2224/48624 , H01L2224/48647 , H01L2224/48724 , H01L2224/48747 , H01L2224/85 , H01L2924/00014 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01022 , H01L2924/01028 , H01L2924/01029 , H01L2924/01047 , H01L2924/01072 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/014 , H01L2924/04941 , H01L2924/14 , H01L2924/04953 , H01L2224/78 , H01L2924/00
摘要： A method of bonding a bonding element to a metal bonding pad comprises the following steps. A semiconductor structure having an exposed, recessed metal bonding pad within a layer opening is provided. The layer has an upper surface. A conductive cap having a predetermined thickness is formed over the metal bonding pad. A bonding element is bonded to the conductive cap to form an electrical connection with the metal bonding pad.
摘要翻译：将接合元件接合到金属接合焊盘的方法包括以下步骤。提供了一种在层开口内具有暴露的凹陷金属接合焊盘的半导体结构。该层具有上表面。在金属焊盘上形成具有预定厚度的导电盖。接合元件结合到导电盖以与金属接合焊盘形成电连接。

70. 发明授权

US06569770B2 Method for improving oxide erosion of tungsten CMP operations 有权
标题翻译：改善钨CMP操作的氧化物侵蚀的方法
公开(公告)号：US06569770B2
公开(公告)日：2003-05-27
申请号：US09893080
申请日：2001-06-28
申请人： Xian Bin Wang , Yi Xu , Subramanian Balakumar , Cuiyang Wang
发明人： Xian Bin Wang , Yi Xu , Subramanian Balakumar , Cuiyang Wang
IPC分类号： H01L2100
CPC分类号： H01L21/7684 , H01L21/3212
摘要： A new method to prevent oxide erosion in a metal plug process by employing a silicon nitride layer over the oxide is described. An oxide layer is deposited overlying a semiconductor substrate. A silicon nitride layer is deposited overlying the oxide layer. An opening is etched through the silicon nitride layer and into the oxide layer. A barrier metal layer is deposited overlying the silicon nitride layer and into the opening. A metal layer is deposited overlying the barrier metal layer. The metal layer and barrier metal layer are polished away using chemical mechanical polishing (CMP) with a polish stop at the silicon nitride layer. The metal layer forms a metal plug. The silicon nitride layer prevents erosion of the oxide layer during the polishing step to complete formation of a metal plug in the fabrication of an integrated circuit device.
摘要翻译：描述了通过在氧化物上使用氮化硅层来防止金属塞过程中的氧化物侵蚀的新方法。沉积在半导体衬底上的氧化物层。沉积氮化硅层覆盖在氧化物层上。通过氮化硅层蚀刻开口并进入氧化物层。在氮化硅层上沉积阻挡金属层并进入开口。沉积在阻挡金属层上的金属层。使用化学机械抛光（CMP）在氮化硅层上抛光停止来抛光金属层和阻挡金属层。金属层形成金属塞。氮化硅层在抛光步骤期间防止氧化物层的侵蚀，以在集成电路器件的制造中完成金属插塞的形成。

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