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1. 发明授权

US06569770B2 Method for improving oxide erosion of tungsten CMP operations 有权
标题翻译：改善钨CMP操作的氧化物侵蚀的方法
公开(公告)号：US06569770B2
公开(公告)日：2003-05-27
申请号：US09893080
申请日：2001-06-28
申请人： Xian Bin Wang , Yi Xu , Subramanian Balakumar , Cuiyang Wang
发明人： Xian Bin Wang , Yi Xu , Subramanian Balakumar , Cuiyang Wang
IPC分类号： H01L2100
CPC分类号： H01L21/7684 , H01L21/3212
摘要： A new method to prevent oxide erosion in a metal plug process by employing a silicon nitride layer over the oxide is described. An oxide layer is deposited overlying a semiconductor substrate. A silicon nitride layer is deposited overlying the oxide layer. An opening is etched through the silicon nitride layer and into the oxide layer. A barrier metal layer is deposited overlying the silicon nitride layer and into the opening. A metal layer is deposited overlying the barrier metal layer. The metal layer and barrier metal layer are polished away using chemical mechanical polishing (CMP) with a polish stop at the silicon nitride layer. The metal layer forms a metal plug. The silicon nitride layer prevents erosion of the oxide layer during the polishing step to complete formation of a metal plug in the fabrication of an integrated circuit device.
摘要翻译：描述了通过在氧化物上使用氮化硅层来防止金属塞过程中的氧化物侵蚀的新方法。沉积在半导体衬底上的氧化物层。沉积氮化硅层覆盖在氧化物层上。通过氮化硅层蚀刻开口并进入氧化物层。在氮化硅层上沉积阻挡金属层并进入开口。沉积在阻挡金属层上的金属层。使用化学机械抛光（CMP）在氮化硅层上抛光停止来抛光金属层和阻挡金属层。金属层形成金属塞。氮化硅层在抛光步骤期间防止氧化物层的侵蚀，以在集成电路器件的制造中完成金属插塞的形成。

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