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61. 发明申请

US20070182433A1 Wafer holder, and wafer prober and semiconductor manufacturing apparatus provided therewith 审中-公开
标题翻译：晶片支架，以及提供的晶圆探测器和半导体制造装置
公开(公告)号：US20070182433A1
公开(公告)日：2007-08-09
申请号：US11699043
申请日：2007-01-29
申请人： Masuhiro Natsuhara , Tomoyuki Awazu , Hirohiko Nakata , Katsuhiro Itakura
发明人： Masuhiro Natsuhara , Tomoyuki Awazu , Hirohiko Nakata , Katsuhiro Itakura
IPC分类号： G01R31/02
CPC分类号： G01R31/2877
摘要： A wafer holder that includes a cooling module for rapid cooling, that can further improve the heating uniformity of a wafer, and that can be appropriately used with a wafer prober, a coater/developer, or the like. The wafer holder includes a mounting stage arranged to mount a wafer on a mounting surface, a heat generator 1 arranged to heat the mounting stage, and a cooling module arranged to cool the mounting stage, wherein an outside diameter of the cooling module is smaller than an outside diameter of the mounting stage, and the heat generator 1 attached to the mounting stage is positioned further to the outside than the cooling module. Along with the heat generator 1, a supplementary heat generator may be positioned between the cooling module and the mounting stage or on a surface of the cooling module opposite the mounting stage.
摘要翻译：包括用于快速冷却的冷却模块的晶片保持器，其可以进一步提高晶片的加热均匀性，并且可以与晶片探测器，涂布机/显影剂等适当地使用。晶片保持器包括安装台，用于将晶片安装在安装表面上，布置成加热安装台的热发生器1和布置成冷却安装台的冷却模块，其中冷却模块的外径小于安装台的外径和附接到安装台的发热体1比冷却模块更靠外侧。与发热体1一起，辅助热发生器可以位于冷却模块和安装台之间或冷却模块的与安装台相对的表面上。

62. 发明申请

US20070173185A1 WAFER HOLDER FOR SEMICONDUCTOR MANUFACTURING DEVICE AND SEMICONDUCTOR MANUFACTURING DEVICE EQUIPPED WITH THE SAME 审中-公开
标题翻译：用于半导体制造装置的半固态装置和配备其的半导体制造装置
公开(公告)号：US20070173185A1
公开(公告)日：2007-07-26
申请号：US11625594
申请日：2007-01-22
申请人： Masuhiro Natsuhara , Tomoyuki Awazu , Kenji Shinma , Hirohiko Nakata
发明人： Masuhiro Natsuhara , Tomoyuki Awazu , Kenji Shinma , Hirohiko Nakata
IPC分类号： B24B29/00
CPC分类号： H01L21/68735
摘要： A wafer holder uniformly heats a wafer at high temperatures without being damaged. A semiconductor manufacturing apparatus is provided with this wafer holder. The contact surface area where the wafer and the wafer mounting surface of the wafer-holding part are in contact includes a contact surface area A in an outer circumferential area that is farther than 1/√2R from the center of the wafer, where R is the radius of the wafer, and a contact surface area B in an inner circumferential area that is within 1/√2R of the center. The contact surface area is established so that A>B. In order to obtain this relationship, the wafer-contacting part of the wafer mounting surface is preferably formed into annular convexities or embossed convexities.
摘要翻译：晶片保持器在高温下均匀地加热晶片而不被损坏。半导体制造装置设置有该晶片保持器。晶片保持部的晶片和晶片安装面接触面的接触面积包括比晶片中心更远离1 /√2R的外周区域的接触面积A，其中R为晶圆的半径以及在中心的1 /√2R以内的内周区域的接触面积B. 建立接触面积，使A> B。为了获得这种关系，晶片安装表面的晶片接触部分优选地形成为环形凸起或压花凸起。

63. 发明申请

US20070133964A1 Fluid heating heater 审中-公开
标题翻译：流体加热器
公开(公告)号：US20070133964A1
公开(公告)日：2007-06-14
申请号：US11636495
申请日：2006-12-11
申请人： Masuhiro Natsuhara , Hirohiko Nakata
发明人： Masuhiro Natsuhara , Hirohiko Nakata
IPC分类号： H05B3/78
CPC分类号： H05B3/265 , F24H1/102 , H05B3/141 , H05B2203/003
摘要： The invention provides a fluid heater in which the efficiency of heat transfer to a fluid is improved, downsizing of the heater itself can be achieved, and the rise time until warm water heated to a necessary temperature is supplied is shortened, which results in reduction of the power consumption. The heater includes a flat ceramic substrate (1) and a heating element formed on one surface of or in the interior of the ceramic substrate (1). The ceramic substrate (1) is made of A1N, etc. or silicon nitride, whose thermal conductivity is 50W/m·K or more. A zigzag water channel is formed by walls 6, etc., on the fluid-heating surface of the ceramic substrate (1). A plurality of fins 5 are fixed in the water channel. A heat insulating material 8 can be mounted so as to cover a surface excluding the fluid-heating surface of the ceramic substrate (1).
摘要翻译：本发明提供了一种流体加热器，其中提高了对流体的传热效率，可以实现加热器本身的小型化，并且提供加热到必要温度的温水的上升时间缩短，从而导致功耗。加热器包括平坦陶瓷基板（1）和形成在陶瓷基板（1）的内表面上或其内部的加热元件。陶瓷基板（1）由A 1 N等或氮化硅制成，其导热率为50W / m·K以上。在陶瓷基板（1）的流体加热表面上由壁6等形成锯齿形的水通道。多个翅片5固定在水通道中。绝热材料8可以安装成覆盖除了陶瓷基板（1）的流体加热表面之外的表面。

64. 发明申请

US20070126457A1 Wafer holder, and heating unit and wafer prober provided with the wafer holder 审中-公开
标题翻译：晶片支架，以及配有晶片支架的加热单元和晶圆探测器
公开(公告)号：US20070126457A1
公开(公告)日：2007-06-07
申请号：US11603233
申请日：2006-11-22
申请人： Masuhiro Natsuhara , Tomoyuki Awazu , Hirohiko Nakata , Katsuhiro Itakura
发明人： Masuhiro Natsuhara , Tomoyuki Awazu , Hirohiko Nakata , Katsuhiro Itakura
IPC分类号： G01R31/26
CPC分类号： G01R31/2893
摘要： A wafer holder is provided with a mounting stage having a mounting surface for mounting a wafer, and a holding member for holding the mounting stage, wherein relationships are established such that K1>K2 and Y1 K3, where K3 is the thermal conductivity of the holding member.
摘要翻译：晶片保持器设置有具有用于安装晶片的安装表面的安装台和用于保持安装台的保持构件，其中建立K 1> K 2和Y 1 K 3，其中K 3是保持构件的热导率。

65. 发明授权

US07177536B2 Fluid heating heater 失效
标题翻译：流体加热器
公开(公告)号：US07177536B2
公开(公告)日：2007-02-13
申请号：US10169249
申请日：2001-10-19
申请人： Masuhiro Natsuhara , Hirohiko Nakata
发明人： Masuhiro Natsuhara , Hirohiko Nakata
IPC分类号： F24H1/10
CPC分类号： H05B3/265 , F24H1/102 , H05B3/141 , H05B2203/003
摘要： The invention provides a fluid heater in which the efficiency of heat transfer to a fluid is improved, downsizing of the heater itself can be achieved, and the rise time until warm water heated to a necessary temperature is supplied is shortened, which results in reduction of the power consumption. The heater includes a flat ceramic substrate (1) and a beating element formed on one surface of or in the interior of the ceramic substrate (1). The ceramic substrate (1) is made of AlN, etc. or silicon nitride, whose thermal conductivity is 50 W/m·K or more. A zigzag water channel is formed by walls 6, etc., on the fluid-heating surface of the ceramic substrate (1). A plurality of fins 5 are fixed in the water channel. A heat insulating material 8 can be mounted so as to cover a surface excluding the fluid-heating surface of the ceramic substrate (1).
摘要翻译：本发明提供了一种流体加热器，其中提高了对流体的传热效率，可以实现加热器本身的小型化，并且提供加热到必要温度的温水的上升时间缩短，这导致功耗。加热器包括平坦陶瓷基板（1）和形成在陶瓷基板（1）的内表面上或其内部的打浆元件。陶瓷基板（1）由AlN等或氮化硅制成，其导热率为50W / m·K以上。在陶瓷基板（1）的流体加热表面上由壁6等形成锯齿形的水通道。多个翅片5固定在水通道中。绝热材料8可以安装成覆盖除了陶瓷基板（1）的流体加热表面之外的表面。

66. 发明申请

US20070024313A1 Chuck top, wafer holder having the chuck top, and wafer prober having the chuck top 审中-公开
标题翻译：卡盘顶部，具有卡盘顶部的晶片架，以及具有卡盘顶部的晶片探测器
公开(公告)号：US20070024313A1
公开(公告)日：2007-02-01
申请号：US11493920
申请日：2006-07-27
申请人： Katsuhiro Itakura , Masuhiro Natsuhara , Tomoyuki Awazu , Hirohiko Nakata
发明人： Katsuhiro Itakura , Masuhiro Natsuhara , Tomoyuki Awazu , Hirohiko Nakata
IPC分类号： G01R31/26
CPC分类号： G01R31/2893
摘要： A chuck top allowing reliable recognition of a wafer mounted on a wafer-mounting surface or on a chuck top conductive layer by a camera such as a CCD and hence allowing wafer inspection without problem is provided. The chuck top is used for a wafer prober mounting a wafer on the wafer-mounting surface for inspection, in which reflectance of a portion other than the portion for mounting the wafer of the wafer-mounting surface or the chuck top conductive layer is smaller than the reflectance of a peripheral end portion of the wafer to be inspected. The portion other than the portion for mounting the wafer of the wafer-mounting surface or the chuck top conductive layer of chuck top preferably has surface roughness Ra of at least 0.0001 μm and at most 0.05 μm.
摘要翻译：提供了一种卡盘头，其允许通过诸如CCD的照相机安装在晶片安装表面或卡盘顶部导电层上的晶片可靠地识别，并且因此允许晶片检查没有问题。卡盘顶部用于将晶片安装在晶片安装表面上用于检查的晶片探测器，其中除了用于安装晶片安装表面或卡盘顶部导电层的晶片的部分之外的部分的反射率小于要检查的晶片的外周端部的反射率。除了用于安装晶片安装表面的晶片或卡盘顶板的导电层的部分之外的部分优选具有至少0.0001μm的表面粗糙度Ra和至多0.05μm的表面粗糙度Ra。

67. 发明申请

US20070024299A1 Body for keeping a wafer and wafer prober using the same 有权
标题翻译：保持晶圆和晶圆探测器的身体使用相同
公开(公告)号：US20070024299A1
公开(公告)日：2007-02-01
申请号：US11485624
申请日：2006-07-13
申请人： Katsuhiro Itakura , Masuhiro Natsuhara , Hirohiko Nakata
发明人： Katsuhiro Itakura , Masuhiro Natsuhara , Hirohiko Nakata
IPC分类号： G01R31/02 , B25B1/00
CPC分类号： H01L21/67109 , G01R31/2865 , G01R31/2877
摘要： According to the invention, there is provided a wafer holding member for use in a wafer prober for inspecting a semiconductor wafer, including a chuck top and a supporting member for supporting the chuck top, wherein the supporting member has a bottom portion facing to the chuck top, a cavity portion is formed between the chuck top and the bottom portion of the supporting member, and there is provided, in the cavity portion, at least a portion of a cooling mechanism for cooling at least one of the chuck top and the supporting member. Further, there is provided a wafer prober using the wafer holding member.
摘要翻译：根据本发明，提供一种晶片保持构件，用于检查半导体晶片的晶片保持构件，该半导体晶片包括卡盘顶部和用于支撑卡盘顶部的支撑构件，其中支撑构件具有面向卡盘的底部顶部，在支撑构件的卡盘顶部和底部之间形成空腔部分，并且在空腔部分中设置有用于冷却卡盘顶部和支撑件中的至少一个的冷却机构的至少一部分会员。此外，提供了使用晶片保持构件的晶片探测器。

68. 发明申请

US20070023320A1 Wafer holder, heater unit having the wafer holder, and wafer prober having the heater unit 审中-公开
标题翻译：晶片保持器，具有晶片保持器的加热器单元和具有加热器单元的晶片探测器
公开(公告)号：US20070023320A1
公开(公告)日：2007-02-01
申请号：US11492223
申请日：2006-07-25
申请人： Katsuhira Itakura , Masuhiro Natsuhara , Tomoyuki Awazu , Hirohiko Nakata , Kenji Shinma
发明人： Katsuhira Itakura , Masuhiro Natsuhara , Tomoyuki Awazu , Hirohiko Nakata , Kenji Shinma
IPC分类号： B65D85/00
CPC分类号： H01L21/68757 , H01L21/67103
摘要： A wafer holder hardly deformable under high load and capable of effectively preventing a contact failure with a wafer and further capable of preventing temperature increase of a driving system of a wafer prober is provided. In a wafer holder having a chuck top and a supporter, variation in thickness of the chuck top from a wafer-mounting surface to a contact surface with the supporter, and variation in thickness of the supporter from a bottom surface to a contact surface with the chuck top are both set to at most 50 μm. When the supporter is of a structure having a circular tube portion and a base portion separate from each other, variation in thickness of the circular tube portion from a contact surface with the chuck top to a contact surface with the base portion, and variation in thickness of the base portion from a bottom surface to a contact surface with the circular tube portion are preferably both set to at most 25 μm.
摘要翻译：晶片保持器在高负载下几乎不变形，并且能够有效地防止与晶片的接触故障，并且还能够防止晶片探测器的驱动系统的温度升高。在具有卡盘顶部和支撑件的晶片保持器中，卡盘顶部从晶片安装表面到支撑件的接触表面的厚度变化，以及支撑件从底表面到接触表面的厚度的变化卡盘顶部都设定为最多50马姆。当支撑体具有圆形管部分和基部彼此分离的结构时，圆形管部分从与卡盘顶部的接触表面到与基部的接触表面的厚度的变化以及厚度的变化从底面到与圆管部分的接触表面的底部部分优选地设定为至多25μm。

69. 发明申请

US20060186904A1 Wafer holder for wafer prober and wafer prober equipped with the same 有权
标题翻译：用于晶圆探针和晶圆探测器的晶片支架配备相同
公开(公告)号：US20060186904A1
公开(公告)日：2006-08-24
申请号：US11287847
申请日：2005-11-29
申请人： Masuhiro Natsuhara , Katsuhiro Itakura , Hirohiko Nakata
发明人： Masuhiro Natsuhara , Katsuhiro Itakura , Hirohiko Nakata
IPC分类号： G01R31/02
CPC分类号： G01R31/2886 , G01R31/2891
摘要： The invention provides a wafer-prober wafer holder that allows positional precision and temperature uniformity to be increased, and also allows the chip to be heated and cooled rapidly, and a wafer prober device provided with the same. The wafer-prober wafer holder of the invention is constituted by a chuck top having a chuck top conducting layer on its surface, and a support member for supporting the chuck top, and has a cavity in a portion between the chuck top and the support member. The chuck top preferably is provided with a heating member.
摘要翻译：本发明提供了一种能够提高位置精度和温度均匀性的晶片探针晶片保持器，并且还允许芯片被快速加热和冷却，以及提供其的晶片探测器装置。本发明的晶片探针晶片保持器由其表面上具有卡盘顶部导电层的卡盘顶板和用于支撑卡盘顶部的支撑件构成，并且在卡盘顶部和支撑件之间的部分中具有空腔。卡盘顶部优选地设置有加热构件。

70. 发明申请

US20050274325A1 Semiconductor heating apparatus 失效
标题翻译：半导体加热装置
公开(公告)号：US20050274325A1
公开(公告)日：2005-12-15
申请号：US11099987
申请日：2005-04-05
申请人： Akira Kuibira , Hirohiko Nakata , Kenji Shinma
发明人： Akira Kuibira , Hirohiko Nakata , Kenji Shinma
IPC分类号： G01R31/26 , C23C16/00 , G01R31/30 , H01L21/00 , H01L21/02 , H01L21/66 , H01L21/68 , H01L21/683 , H05B3/06 , H05B3/10 , H05B3/20 , H05B3/68 , H05B3/74
CPC分类号： H01L21/67109 , H01L21/67103
摘要： The present invention provides a semiconductor heating apparatus, in which, when measuring the electrical properties of multiple chips formed on a large size wafer, only one or a several chips are heated uniformly, and the other chips are on standby at a low temperature. The present invention is a semiconductor heating apparatus, comprising a heating part for mounting and heating the workpiece, a support part which supports the heating part, and a cooling module which contacts the support part. A plurality of heating parts and supporting parts are joined together. The workpiece mounting surfaces of the plurality of heating parts are preferably constructed in the same plane. In addition, there is preferably a thermal insulating material distributed underneath the support part. The heating part is preferably a ceramic heater.
摘要翻译：本发明提供一种半导体加热装置，其中，当测量形成在大尺寸晶片上的多个芯片的电特性时，只有一个或几个芯片被均匀地加热，并且其它芯片在低温待机。本发明是一种半导体加热装置，包括用于安装和加热工件的加热部件，支撑加热部件的支撑部件和与支撑部件接触的冷却模块。多个加热部和支撑部接合在一起。多个加热部的工件安装面优选构成为同一平面。此外，优选地，分布在支撑部分下方的绝热材料。加热部件优选为陶瓷加热器。

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