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61. 发明授权

US07045829B2 Light-emitting semiconductor device using Group III nitride compound 失效
标题翻译：使用III族氮化物的发光半导体器件
公开(公告)号：US07045829B2
公开(公告)日：2006-05-16
申请号：US08681412
申请日：1996-07-23
申请人： Masayoshi Koike , Shinya Asami
发明人： Masayoshi Koike , Shinya Asami
IPC分类号： H01L33/00
CPC分类号： H01L33/32 , H01S5/3213 , H01S5/32341
摘要： A Group III nitride compound semiconductor includes a multiple layer structure having an emission layer between an n-type cladding layer and a p-type cladding layer. The n-type cladding layer may be below the emission layer, having been formed on another n-type layer which was formed over a buffer Layer and a sapphire substrate. The emission layer has a thickness which is wider than the diffusion length of holes within the emission layer. The n-type cladding layer is doped with a donor impurity and has a lattice constant Substantially equal to a lattice constant of the emission layer. The p-type cladding layer is doped with an acceptor impurity and has a forbidden band sufficiently wider than the forbidden band of the emission layer in ordor to confine electrons injected into the emission layer.
摘要翻译： III族氮化物化合物半导体包括在n型包覆层和p型包覆层之间具有发射层的多层结构。 n型覆层可以在形成在缓冲层和蓝宝石衬底上的另一n型层上形成的发光层之下。发光层的厚度比发光层内的孔的扩散长度宽。 n型包覆层掺杂有施主杂质，其晶格常数基本上等于发光层的晶格常数。 p型覆层被掺杂有受主杂质，并且具有比限制发射层中的发射层的禁带宽度更宽的禁带，以限制注入到发射层中的电子。

62. 发明授权

US06979584B2 Method for producing group III nitride compound semiconductor and group III nitride compound semiconductor device 失效
标题翻译：制备III族氮化物化合物半导体和III族氮化物化合物半导体器件的方法
公开(公告)号：US06979584B2
公开(公告)日：2005-12-27
申请号：US10168617
申请日：2000-12-21
申请人： Masayoshi Koike , Yuta Tezen , Toshio Hiramatsu
发明人： Masayoshi Koike , Yuta Tezen , Toshio Hiramatsu
IPC分类号： C30B29/38 , H01L21/20 , H01L21/205 , H01L33/06 , H01L33/16 , H01L33/22 , H01L33/32 , H01S5/323 , H01S5/343
CPC分类号： H01L33/007 , B82Y20/00 , H01L21/0237 , H01L21/02381 , H01L21/0242 , H01L21/0243 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L21/0265 , H01L33/0075 , H01L33/025 , H01S5/34333
摘要： A first Group III nitride compound semiconductor layer 31 is etched, to thereby form an island-like structure such as a dot-like, stripe-shaped, or grid-like structure, so as to provide a trench/post. Thus, a second Group III nitride compound layer 32 can be epitaxially grown, vertically and laterally, from a top surface of the post and a sidewall/sidewalls of the trench serving as a nucleus for epitaxial growth, to thereby bury the trench and also grow the layer in the vertical direction. In this case, propagation of threading dislocations contained in the first Group III nitride compound semiconductor layer 31 can be prevented in the upper portion of the second Group III nitride compound semiconductor 32 that is formed through lateral epitaxial growth. As a result, a region having less threading dislocations is formed at the buried trench.
摘要翻译：蚀刻第一III族氮化物化合物半导体层31，从而形成诸如点状，条状或栅格状结构的岛状结构，以提供沟槽/柱。因此，可以从柱的顶表面和用作外延生长的核的沟槽的侧壁/侧壁外延生长第二III族氮化物化合物层32，从而埋入沟槽并且也生长该层在垂直方向。在这种情况下，可以通过横向外延生长形成的第二III族氮化物半导体32的上部阻止在第一III族氮化物化合物半导体层31中包含的穿透位错的传播。结果，在埋入沟槽处形成具有较少穿透位错的区域。

63. 发明授权

US06946370B2 Semiconductor crystal producing method 有权
标题翻译：半导体晶体制造方法
公开(公告)号：US06946370B2
公开(公告)日：2005-09-20
申请号：US10488083
申请日：2002-08-05
申请人： Masayoshi Koike , Hiroshi Watanabe
发明人： Masayoshi Koike , Hiroshi Watanabe
IPC分类号： C30B29/38 , C30B25/02 , C30B25/18 , H01L21/20
CPC分类号： C30B25/02 , C30B25/18 , C30B29/403 , C30B29/406
摘要： In a separation layer removing process α, temperature in a reaction chamber (heat treatment temperature TX) is raised to about 1000° C. and a separation layer A is evaporated through thermal decomposition, to thereby separate about 10 μm in thickness of protection layer B from a base substrate side (a sapphire substrate 101 comprising a buffer layer 102). Because decomposition temperature of the separation layer A is higher than growth temperature of the protection layer B (about 650° C.) and lower than growth temperature of the semiconductor crystal C (about 1000° C.), the separation layer A vanishes (evaporates) by thermal decomposition, which generates this separation process. Accordingly, a semiconductor crystal having a cross sectional structure shown in FIG. 2B is obtained. By employing the protection layer B which is independent from the base substrate side as another crystal growth substrate, dislocations and cracks may not be generated by stress owing to difference of lattice constants or difference of thermal expansion coefficients, and a semiconductor crystal layer C (GaN single crystal) of high quality can be obtained.
摘要翻译：在分离层去除方法α中，将反应室中的温度（热处理温度T×X）升高至约1000℃，通过热分解蒸发分离层A，从而分离约保护层B的厚度为10μm，从基底侧（包括缓冲层102的蓝宝石衬底101）。由于分离层A的分解温度高于保护层B的生长温度（约650℃）且低于半导体晶体C的生长温度（约1000℃），所以分离层A消失（蒸发）通过热分解，产生这种分离过程。因此，具有图1所示的横截面结构的半导体晶体。 2 B。通过采用独立于基底侧的保护层B作为另一种晶体生长衬底，由于晶格常数或热膨胀系数的差异而导致的应力不会产生位错和裂纹，并且半导体晶体层C（GaN 单晶）。

64. 发明授权

US06645295B1 Method for manufacturing group III nitride compound semiconductor and a light-emitting device using group III nitride compound semiconductor 有权
标题翻译：制造III族氮化物化合物半导体的方法和使用III族氮化物化合物半导体的发光装置
公开(公告)号：US06645295B1
公开(公告)日：2003-11-11
申请号：US09566917
申请日：2000-05-09
申请人： Masayoshi Koike , Seiji Nagai
发明人： Masayoshi Koike , Seiji Nagai
IPC分类号： C30B2504
CPC分类号： H01L33/007 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L21/02647
摘要： A buffer layer 2 made of aluminum nitride (AlN) is formed on a substrate 1 and is formed into an island pattern such as a dot pattern, a striped pattern, or a grid pattern such that substrate-exposed portions are formed in a scattered manner. A group III nitride compound semiconductor 3 grows epitaxially on the buffer layer 2 in a longitudinal direction, and grows epitaxially on the substrate-exposed portions in a lateral direction. As a result, a group III nitride compound semiconductor 3 which has little or no feedthrough dislocations 4 is obtained. Because the region where the group III nitride compound semiconductor 3 grows epitaxially in a lateral direction, on region 32, has excellent crystallinity, forming a group III nitride compound semiconductor device on the upper surface of the region results in improved device characteristics.
摘要翻译：在基板1上形成由氮化铝（AlN）构成的缓冲层2，形成为点阵图案，条纹图案或格栅图案等岛状图案，使得基板曝光部分以散射方式形成。 III族氮化物化合物半导体3沿纵向在外延生长在缓冲层2上，并沿横向在外延生长在基板暴露部分上。结果，得到几乎没有或没有穿穿位错4的III族氮化物化合物半导体3。由于III族氮化物半导体3在横向上外延生长的区域，在区域32上具有优异的结晶性，所以在该区域的上表面上形成III族氮化物化合物半导体器件导致改进的器件特性。

65. 发明授权

US06620643B1 Light-emitting device using group III nitride compound semiconductor 失效
标题翻译：使用III族氮化物化合物半导体的发光装置
公开(公告)号：US06620643B1
公开(公告)日：2003-09-16
申请号：US09631980
申请日：2000-08-03
申请人： Masayoshi Koike
发明人： Masayoshi Koike
IPC分类号： H01L2100
CPC分类号： H01L33/08 , H01L33/06 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2224/49107 , H01L2924/00014
摘要： A group III nitride compound semiconductor light-emitting device provides a multiple quantum well (MQW) active layer formed on an intermediate layer. The MQW active layer may include, for example, five semiconductor layers having a thickness of approximately 500 Å. The five layers of the MQW active layer may comprise two gallium nitride (GaN) barrier layers each having a thickness of approximately 100 Å and three well layers having different emission wavelengths. The barrier layers and the well layers are stacked alternately. The three well layers may include, for example, an Al0.1In0.9N red-light-emitting well layer having a thickness of approximately 20 Å and doped with impurities (zinc (Zn) and silicon (Si)), a non-doped In0.2Ga0.8N green-light-emitting well layer having a thickness of approximately 50 Å and a non-doped In0.05Ga0.95N blue-light-emitting well layer having a thickness of approximately 30 Å, wherein the three well layers are stacked in the order given.
摘要翻译： III族氮化物化合物半导体发光器件提供形成在中间层上的多量子阱（MQW）有源层。 MQW有源层可以包括例如厚度约为500埃的五个半导体层。 MQW有源层的五层可以包括各自具有大约厚度的两个氮化镓（GaN）阻挡层和具有不同发射波长的三个阱层。阻挡层和阱层交替堆叠。三个阱层可以包括例如厚度约为20埃的掺杂有杂质（锌（Zn）和硅（Si））的Al 0.1 In 0.9 N红色发光阱层，非掺杂具有厚度约为50埃的In 0.2 Ga 0.8 N绿色发光阱层和厚度约为30埃的未掺杂的In0.05Ga0.95N蓝色发光阱层，其中三个阱层是按照给定的顺序堆放。

66. 发明授权

US06552376B1 Group III nitride compound semiconductor device 有权
公开(公告)号：US06552376B1
公开(公告)日：2003-04-22
申请号：US09654492
申请日：2000-09-01
申请人： Masayoshi Koike , Shiro Yamasaki
发明人： Masayoshi Koike , Shiro Yamasaki
IPC分类号： H01L31072
CPC分类号： H01L33/32 , B82Y20/00 , H01L31/03046 , H01S5/021 , H01S5/0211 , H01S5/305 , H01S5/3054 , H01S5/3211 , H01S5/34333 , H01S2304/04 , Y02E10/544
摘要： Aluminum gallium nitride (AlxGa1−xN, 0

67. 发明授权

US5811319A Methods of forming electrodes on gallium nitride group compound semiconductors 失效
标题翻译：在氮化镓基化合物半导体上形成电极的方法
公开(公告)号：US5811319A
公开(公告)日：1998-09-22
申请号：US622045
申请日：1996-03-26
申请人： Masayoshi Koike , Seiji Nagai , Shiro Yamasaki , Masanori Murakami , Katsuyuki Tsukui , Hidenori Ishikawa
发明人： Masayoshi Koike , Seiji Nagai , Shiro Yamasaki , Masanori Murakami , Katsuyuki Tsukui , Hidenori Ishikawa
IPC分类号： H01L21/28 , H01L21/285 , H01L29/45 , H01L33/32 , H01L33/40
CPC分类号： H01L33/40 , H01L21/28575 , H01L29/452 , H01L33/007
摘要： A surface of a compound semiconductor having at least gallium (Ga) and nitride (N) forms a target for sputtering with inert gas, so that oxide and other attachments are removed therefrom. The sputtering the surface is carried out until a disruption layer is formed which has atomically disordered and bumpy arrangement. Following the sputtering process, metal deposition by sputtering and alloying are carried out under vacuum in the same chamber used for the sputtering processes. As a result, the contact resistance between the surface layer and the deposited electrode layer is decreased.
摘要翻译：至少具有镓（Ga）和氮化物（N）的化合物半导体的表面形成用惰性气体溅射的靶，从而除去氧化物和其它附着物。进行表面的溅射，直到形成具有原子上无序和颠簸布置的破坏层。在溅射工艺之后，通过溅射和合金化的金属沉积在用于溅射工艺的相同的室中在真空下进行。结果，表面层和沉积电极层之间的接触电阻降低。

68. 发明授权

US08664687B2 Nitride semiconductor light-emitting device and process for producing the same 失效
标题翻译：氮化物半导体发光器件及其制造方法
公开(公告)号：US08664687B2
公开(公告)日：2014-03-04
申请号：US10898204
申请日：2004-07-26
申请人： Dong Hyun Cho , Masayoshi Koike , Yuiji Imai , Min Ho Kim , Bang Won Oh , Hun Joo Hahm
发明人： Dong Hyun Cho , Masayoshi Koike , Yuiji Imai , Min Ho Kim , Bang Won Oh , Hun Joo Hahm
IPC分类号： H01L33/00
CPC分类号： H01L33/0075 , H01L21/02389 , H01L21/02458 , H01L21/0254 , H01L21/02639 , H01L21/02647
摘要： Provided are a nitride semiconductor light-emitting device comprising a polycrystalline or amorphous substrate made of AlN; a plurality of dielectric patterns formed on the AlN substrate and having a stripe or lattice structure; a lateral epitaxially overgrown-nitride semiconductor layer formed on the AlN substrate having the dielectric patterns by Lateral Epitaxial Overgrowth; a first conductive nitride semiconductor layer formed on the nitride semiconductor layer; an active layer formed on the first conductive nitride semiconductor layer; and a second conductive nitride semiconductor layer formed on the active layer; and a process for producing the same.
摘要翻译：提供一种氮化物半导体发光器件，其包括由AlN制成的多晶或非晶衬底; 形成在所述AlN基板上并具有条纹或格子结构的多个电介质图案; 通过横向外延生长形成在具有电介质图案的AlN衬底上的侧向外延氮化半导体层; 形成在所述氮化物半导体层上的第一导电氮化物半导体层; 形成在所述第一导电氮化物半导体层上的有源层; 以及形成在所述有源层上的第二导电氮化物半导体层; 及其制造方法。

69. 发明授权

US08593063B2 White light emitting device 失效
标题翻译：白色发光装置
公开(公告)号：US08593063B2
公开(公告)日：2013-11-26
申请号：US13474240
申请日：2012-05-17
申请人： Pun Jae Choi , Masayoshi Koike , Sang Yeob Song
发明人： Pun Jae Choi , Masayoshi Koike , Sang Yeob Song
IPC分类号： H05B33/00 , H01J1/62
CPC分类号： H01L33/50 , H01L25/0753 , H01L2924/0002 , H01L2924/00
摘要： A white light emitting device includes a structure for emitting white light having at least four wavelengths by using two or less LEDs, where the LEDs include a blue/green LED emitting blue and green wavelengths of light. The device also includes means for emitting red wavelength of light.
摘要翻译：白色发光器件包括通过使用两个或更少的LED发射具有至少四个波长的白光的结构，其中LED包括发射蓝色和绿色波长的光的蓝/绿LED。该装置还包括用于发射红色波长的光的装置。

70. 发明申请

US20130126907A1 GROUP III NITRIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译： III类氮化物半导体器件及其制造方法
公开(公告)号：US20130126907A1
公开(公告)日：2013-05-23
申请号：US13704963
申请日：2011-11-25
申请人： Tsukasa Kitano , Koichi Naniwae , Masayoshi Koike , Fumiharu Teramae , Toshiyuki Kondo , Atsushi Suzuki , Tomohiko Maeda , Midori Mori
发明人： Tsukasa Kitano , Koichi Naniwae , Masayoshi Koike , Fumiharu Teramae , Toshiyuki Kondo , Atsushi Suzuki , Tomohiko Maeda , Midori Mori
IPC分类号： H01L29/16 , H01L21/02
CPC分类号： H01L29/1608 , H01L21/02107 , H01L21/02378 , H01L21/02458 , H01L21/0254 , H01L21/02603 , H01L21/02631 , H01L21/02639 , H01L33/007 , H01L33/12 , H01L33/20 , H01L33/32
摘要： [Problem] To provide a group III nitride semiconductor device and a method for manufacturing the same in which dislocation density in a semiconductor layer can be precisely reduced.[Solution] In manufacturing a group III nitride semiconductor device 1, a mask layer 40 is formed on a substrate 20, followed by selectively growing nanocolumns 50 made of a group III nitride semiconductor through a pattern 44 of the mask layer 40 in order to grow a group III nitride semiconductor layer 10 on the mask layer 40.
摘要翻译： [问题]提供可以精确地减少半导体层中的位错密度的III族氮化物半导体器件及其制造方法。 [解决方案]在制造III族氮化物半导体器件1中，在衬底20上形成掩模层40，然后通过掩模层40的图案44选择性地生长由III族氮化物半导体制成的纳米柱50，以生长掩模层40上的III族氮化物半导体层10。

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