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    • 62. 发明授权
    • System and method for generating pattern data used to control a pattern generator
    • 用于生成用于控制图案生成器的图案数据的系统和方法
    • US07713667B2
    • 2010-05-11
    • US10998991
    • 2004-11-30
    • Azat M. LatypovArno Jan BleekerJang Fung ChenKars Zeger Troost
    • Azat M. LatypovArno Jan BleekerJang Fung ChenKars Zeger Troost
    • G03F9/00
    • G03F7/70441G03F7/70291G03F7/70508
    • A method and system are used to modify pattern data obtained in relation to a pattern on a static patterning device. It is suggested that, in an example when a maskless lithography tool is used, continuous OPC-enhanced features used for maskless lithography rasterization should include a variation in local amplitude and phase transmittance that matches modulation capabilities of a patterning device being used. The modified pattern data is used by a dynamic patterning device to pattern impinging light, which is then projected onto an object. The system and method comprise using a pattern data generating device, a modification device, a dynamic pattern generator, and a projection system. The pattern data generating device generates pattern data corresponding to a pattern on a static patterning device. The modification device receives the pattern data and modifies the pattern data using characteristics of a type of the dynamic pattern generator being used. The dynamic pattern generator receives the modified patterned data and uses the modified pattern data to pattern the beam of radiation. The projection system projects the patterned beam onto the object.
    • 使用方法和系统来修改相对于静态图案形成装置上的图案获得的图案数据。 建议在使用无掩模光刻工具的示例中,用于无掩模光刻光栅化的连续OPC增强特征应包括与正在使用的图案形成装置的调制能力相匹配的局部振幅和相位透射率的变化。 修改的图案数据由动态图案形成装置用于对入射光进行图案化,然后将其投影到物体上。 该系统和方法包括使用图案数据生成装置,修改装置,动态图案生成器和投影系统。 图案数据生成装置生成与静态图案形成装置上的图案对应的图案数据。 修改设备接收图案数据,并使用所使用的动态图案生成器的类型的特性来修改图案数据。 动态图案生成器接收经修改的图案数据并使用经修改的图案数据来对辐射束进行图案化。 投影系统将图案化的光束投射到物体上。
    • 69. 发明授权
    • Method and apparatus for minimizing optical proximity effects
    • US06519760B2
    • 2003-02-11
    • US09840305
    • 2001-04-24
    • Xuelong ShiJang Fung ChenStephen Hsu
    • Xuelong ShiJang Fung ChenStephen Hsu
    • G06F1750
    • G03F7/705G03F7/70125G03F7/70433G03F7/70441
    • Optical proximity effects (OPEs) are a well-known phenomenon in photolithography. OPEs result from the structural interaction between the main feature and neighboring features. It has been determined by the present inventors that such structural interactions not only affect the critical dimension of the main feature at the image plane, but also the process latitude of the main feature. Moreover, it has been determined that the variation of the critical dimension as well as the process latitude of the main feature is a direct consequence of light field interference between the main feature and the neighboring features. Depending on the phase of the field produced by the neighboring features, the main feature critical dimension and process latitude can be improved by constructive light field interference, or degraded by destructive light field interference. The phase of the field produced by the neighboring features is dependent on the pitch as well as the illumination angle. For a given illumination, the forbidden pitch region is the location where the field produced by the neighboring features interferes with the field of the main feature destructively. The present invention provides a method for determining and eliminating the forbidden pitch region for any feature size and illumination condition. Moreover, it provides a method for performing illumination design in order to suppress the forbidden pitch phenomena, and for optimal placement of scattering bar assist features.
    • 70. 发明授权
    • Method of performing resist process calibration/optimization and DOE optimization for providing OPE matching between different lithography systems
    • 执行抗蚀剂工艺校准/优化和DOE优化的方法,以提供不同光刻系统之间的OPE匹配
    • US07652758B2
    • 2010-01-26
    • US11503188
    • 2006-08-14
    • SangBong ParkJang Fung ChenArmin Liebchen
    • SangBong ParkJang Fung ChenArmin Liebchen
    • G01B9/00G03B27/32G03C5/00
    • G03F7/70458G03F7/70108G03F7/705G03F7/70525
    • A method of optimizing a process for use with a plurality of lithography systems. The method includes the steps of: (a) determining a calibrated resist model for a given process and a target pattern utilizing a first lithography system; (b) selecting a second lithography system to be utilized to image the target pattern utilizing the given process, the second lithography system capable of being configured with one of a plurality of diffractive optical elements, each of the plurality of diffractive optical elements having corresponding variable parameters for optimizing performance of the given diffractive optical element; (c) selecting one of the plurality of diffractive optical elements and simulating the imaging performance of the second lithography system utilizing the selected one of the plurality of diffractive optical elements, the calibrated resist model and the target pattern; and (d) optimizing the imaging performance of the selected one of the plurality of diffractive optical elements by executing a genetic algorithm which identifies the values of the parameters of the selected one of the plurality of diffractive optical elements that optimizes the imaging of the target pattern.
    • 一种优化用于多个光刻系统的工艺的方法。 该方法包括以下步骤:(a)使用第一光刻系统确定用于给定过程的校准抗蚀剂模型和目标图案; (b)选择待利用的第二光刻系统,以利用所述给定的处理对所述目标图案进行成像,所述第二光刻系统能够被配置为具有多个衍射光学元件中的一个衍射光学元件,所述多个衍射光学元件中的每一个具有对应的变量 用于优化给定衍射光学元件的性能的参数; (c)选择多个衍射光学元件中的一个并利用所选择的多个衍射光学元件中的所选择的一个衍射光学元件,校准的抗蚀剂模型和目标图案来模拟第二光刻系统的成像性能; 以及(d)通过执行遗传算法来优化所述多个衍射光学元件中所选择的一个衍射光学元件的成像性能,所述遗传算法识别所述多​​个衍射光学元件中所选择的一个的参数的值,其优化所述目标图案的成像 。