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1. 发明授权

US07116411B2 Method of performing resist process calibration/optimization and DOE optimization for providing OPE matching between different lithography systems 有权
标题翻译：执行抗蚀剂工艺校准/优化和DOE优化的方法，以提供不同光刻系统之间的OPE匹配
公开(公告)号：US07116411B2
公开(公告)日：2006-10-03
申请号：US10926400
申请日：2004-08-26
申请人： Sangbong Park , Jang Fung Chen , Armin Liebchen
发明人： Sangbong Park , Jang Fung Chen , Armin Liebchen
IPC分类号： G01B9/00 , G03B27/32 , G03C5/00
CPC分类号： G03F7/70458 , G03F7/70108 , G03F7/705 , G03F7/70525
摘要： A method of optimizing a process for use with a plurality of lithography systems. The method includes the steps of: (a) determining a calibrated resist model for a given process and a target pattern utilizing a first lithography system; (b) selecting a second lithography system to be utilized to image the target pattern utilizing the given process, the second lithography system capable of being configured with one of a plurality of diffractive optical elements, each of the plurality of diffractive optical elements having corresponding variable parameters for optimizing performance of the given diffractive optical element; (c) selecting one of the plurality of diffractive optical elements and simulating the imaging performance of the second lithography system utilizing the selected one of the plurality of diffractive optical elements, the calibrated resist model and the target pattern; and (d) optimizing the imaging performance of the selected one of the plurality of diffractive optical elements by executing a genetic algorithm which identifies the values of the parameters of the selected one of the plurality of diffractive optical elements that optimizes the imaging of the target pattern.
摘要翻译：一种优化用于多个光刻系统的工艺的方法。该方法包括以下步骤：（a）使用第一光刻系统确定用于给定过程的校准抗蚀剂模型和目标图案; （b）选择待利用的第二光刻系统，以利用所述给定的处理对所述目标图案进行成像，所述第二光刻系统能够被配置为具有多个衍射光学元件中的一个衍射光学元件，所述多个衍射光学元件中的每一个具有对应的变量用于优化给定衍射光学元件的性能的参数; （c）选择多个衍射光学元件中的一个并利用所选择的多个衍射光学元件中的所选择的一个衍射光学元件，校准的抗蚀剂模型和目标图案来模拟第二光刻系统的成像性能; 以及（d）通过执行遗传算法来优化所述多个衍射光学元件中所选择的一个衍射光学元件的成像性能，所述遗传算法识别所述多个衍射光学元件中所选择的一个的参数的值，其优化所述目标图案的成像。

2. 发明授权

US07652758B2 Method of performing resist process calibration/optimization and DOE optimization for providing OPE matching between different lithography systems 有权
标题翻译：执行抗蚀剂工艺校准/优化和DOE优化的方法，以提供不同光刻系统之间的OPE匹配
公开(公告)号：US07652758B2
公开(公告)日：2010-01-26
申请号：US11503188
申请日：2006-08-14
申请人： SangBong Park , Jang Fung Chen , Armin Liebchen
发明人： SangBong Park , Jang Fung Chen , Armin Liebchen
IPC分类号： G01B9/00 , G03B27/32 , G03C5/00
CPC分类号： G03F7/70458 , G03F7/70108 , G03F7/705 , G03F7/70525
摘要： A method of optimizing a process for use with a plurality of lithography systems. The method includes the steps of: (a) determining a calibrated resist model for a given process and a target pattern utilizing a first lithography system; (b) selecting a second lithography system to be utilized to image the target pattern utilizing the given process, the second lithography system capable of being configured with one of a plurality of diffractive optical elements, each of the plurality of diffractive optical elements having corresponding variable parameters for optimizing performance of the given diffractive optical element; (c) selecting one of the plurality of diffractive optical elements and simulating the imaging performance of the second lithography system utilizing the selected one of the plurality of diffractive optical elements, the calibrated resist model and the target pattern; and (d) optimizing the imaging performance of the selected one of the plurality of diffractive optical elements by executing a genetic algorithm which identifies the values of the parameters of the selected one of the plurality of diffractive optical elements that optimizes the imaging of the target pattern.
摘要翻译：一种优化用于多个光刻系统的工艺的方法。该方法包括以下步骤：（a）使用第一光刻系统确定用于给定过程的校准抗蚀剂模型和目标图案; （b）选择待利用的第二光刻系统，以利用所述给定的处理对所述目标图案进行成像，所述第二光刻系统能够被配置为具有多个衍射光学元件中的一个衍射光学元件，所述多个衍射光学元件中的每一个具有对应的变量用于优化给定衍射光学元件的性能的参数; （c）选择多个衍射光学元件中的一个并利用所选择的多个衍射光学元件中的所选择的一个衍射光学元件，校准的抗蚀剂模型和目标图案来模拟第二光刻系统的成像性能; 以及（d）通过执行遗传算法来优化所述多个衍射光学元件中所选择的一个衍射光学元件的成像性能，所述遗传算法识别所述多个衍射光学元件中所选择的一个的参数的值，其优化所述目标图案的成像。

3. 发明申请

US20060044542A1 Method of performing resist process calibration/optimization and DOE optimization for providing OPE matching between different lithography systems 有权
公开(公告)号：US20060044542A1
公开(公告)日：2006-03-02
申请号：US10926400
申请日：2004-08-26
申请人： Sangbong Park , Jang Chen , Armin Liebchen
发明人： Sangbong Park , Jang Chen , Armin Liebchen
IPC分类号： G03B27/72
CPC分类号： G03F7/70458 , G03F7/70108 , G03F7/705 , G03F7/70525
摘要： A method of optimizing a process for use with a plurality of lithography systems. The method includes the steps of: (a) determining a calibrated resist model for a given process and a target pattern utilizing a first lithography system; (b) selecting a second lithography system to be utilized to image the target pattern utilizing the given process, the second lithography system capable of being configured with one of a plurality of diffractive optical elements, each of the plurality of diffractive optical elements having corresponding variable parameters for optimizing performance of the given diffractive optical element; (c) selecting one of the plurality of diffractive optical elements and simulating the imaging performance of the second lithography system utilizing the selected one of the plurality of diffractive optical elements, the calibrated resist model and the target pattern; and (d) optimizing the imaging performance of the selected one of the plurality of diffractive optical elements by executing a genetic algorithm which identifies the values of the parameters of the selected one of the plurality of diffractive optical elements that optimizes the imaging of the target pattern.

4. 发明申请

US20070002311A1 Method of performing resist process calibration/optimization and DOE optimization for providing OPE matching between different lithography systems 有权
标题翻译：执行抗蚀剂工艺校准/优化和DOE优化的方法，以提供不同光刻系统之间的OPE匹配
公开(公告)号：US20070002311A1
公开(公告)日：2007-01-04
申请号：US11503188
申请日：2006-08-14
申请人： SangBong Park , Jang Chen , Armin Liebchen
发明人： SangBong Park , Jang Chen , Armin Liebchen
IPC分类号： G01B9/00
CPC分类号： G03F7/70458 , G03F7/70108 , G03F7/705 , G03F7/70525
摘要： A method of optimizing a process for use with a plurality of lithography systems. The method includes the steps of: (a) determining a calibrated resist model for a given process and a target pattern utilizing a first lithography system; (b) selecting a second lithography system to be utilized to image the target pattern utilizing the given process, the second lithography system capable of being configured with one of a plurality of diffractive optical elements, each of the plurality of diffractive optical elements having corresponding variable parameters for optimizing performance of the given diffractive optical element; (c) selecting one of the plurality of diffractive optical elements and simulating the imaging performance of the second lithography system utilizing the selected one of the plurality of diffractive optical elements, the calibrated resist model and the target pattern; and (d) optimizing the imaging performance of the selected one of the plurality of diffractive optical elements by executing a genetic algorithm which identifies the values of the parameters of the selected one of the plurality of diffractive optical elements that optimizes the imaging of the target pattern.
摘要翻译：一种优化用于多个光刻系统的工艺的方法。该方法包括以下步骤：（a）使用第一光刻系统确定用于给定过程的校准抗蚀剂模型和目标图案; （b）选择待利用的第二光刻系统，以利用所述给定的处理对所述目标图案进行成像，所述第二光刻系统能够被配置为具有多个衍射光学元件之一，所述多个衍射光学元件中的每一个具有对应的变量用于优化给定衍射光学元件的性能的参数; （c）选择多个衍射光学元件中的一个并利用所选择的多个衍射光学元件中的所选择的一个衍射光学元件，校准的抗蚀剂模型和目标图案来模拟第二光刻系统的成像性能; 以及（d）通过执行遗传算法来优化所述多个衍射光学元件中所选择的一个衍射光学元件的成像性能，所述遗传算法识别所述多个衍射光学元件中所选择的一个的参数的值，其优化所述目标图案的成像。

5. 发明授权

US07034919B2 Method and apparatus for providing lens aberration compensation by illumination source optimization 有权
标题翻译：通过照明光源优化提供透镜像差补偿的方法和装置
公开(公告)号：US07034919B2
公开(公告)日：2006-04-25
申请号：US10705234
申请日：2003-11-12
申请人： Armin Liebchen
发明人： Armin Liebchen
IPC分类号： G03B27/68 , G03B27/52
CPC分类号： G03F7/705 , G03F7/70125
摘要： A method for compensating for lens aberrations, which includes the steps of: (a) defining a cost metric which quantifies an imaging performance of an imaging system, where the cost metric reflects the effects of lens aberrations on the imaging performance; (b) defining a source illumination profile; (c) evaluating the cost metric based on the source illumination profile; (d) modifying the source illumination profile, and re-evaluating the cost metric based on the modified source illumination profile; and (e) repeating step (d) until the cost metric is minimized. The source illumination profile corresponding to the minimized cost metric represents the optimal illumination for the imaging device.
摘要翻译：一种用于补偿透镜像差的方法，其包括以下步骤：（a）定义量化成像系统的成像性能的成本度量，其中成本度量反映透镜像差对成像性能的影响; （b）定义源照明轮廓; （c）基于源照明曲线评估成本度量; （d）修改源照明轮廓，以及基于修改的源照明轮廓重新评估成本度量; 和（e）重复步骤（d），直到成本度量最小化为止。对应于最小化成本度量的源照明轮廓表示成像装置的最佳照明。

6. 发明授权

US07355673B2 Method, program product and apparatus of simultaneous optimization for NA-Sigma exposure settings and scattering bars OPC using a device layout 有权
标题翻译：使用设备布局的NA-Sigma曝光设置和散射棒OPC的同时优化的方法，程序产品和设备
公开(公告)号：US07355673B2
公开(公告)日：2008-04-08
申请号：US10878489
申请日：2004-06-29
申请人： Duan-Fu Stephen Hsu , Armin Liebchen
发明人： Duan-Fu Stephen Hsu , Armin Liebchen
IPC分类号： G03B27/42 , G03B27/54 , G03B27/32 , G03C5/00
CPC分类号： G03F7/70441 , G03F1/36 , G03F7/70125 , G03F7/70425
摘要： Disclose is a method, program product and apparatus for optimizing numerical aperture (“NA”) and sigma of a lithographic system based on the target layout. A pitch or interval analysis is performed to identify the distribution of critical pitch over the design. Based on the pitch or interval analysis, a critical dense pitch is identified. NA, sigma-in, sigma-out parameters are optimized such that the critical feature will print with or without bias adjustment. For features other than the critical dense features, adjustments are made in accordance with OPC, and lithographic apparatus settings are further mutually optimized. Accordingly, lithographic apparatus settings may be optimized for any pattern concurrently with OPC.
摘要翻译： Disclose是一种基于目标布局优化光刻系统的数值孔径（“NA”）和sigma的方法，程序产品和设备。执行音调或间隔分析以确定设计上的关键音高的分布。基于间距或间隔分析，确定了一个临界密度。 NA，sigma-in，sigma-out参数被优化，使得临界特征将在有或没有偏置调整的情况下打印。对于临界致密特征以外的特征，根据OPC进行调整，并进一步相互优化光刻设备设置。因此，可以对于与OPC同时的任何图案来优化光刻设备设置。

7. 发明申请

US20050028129A1 Method, program product and apparatus of simultaneous optimization for NA-Sigma exposure settings and scattering bars OPC using a device layout 有权
标题翻译：使用设备布局的NA-Sigma曝光设置和散射棒OPC的同时优化的方法，程序产品和设备
公开(公告)号：US20050028129A1
公开(公告)日：2005-02-03
申请号：US10878489
申请日：2004-06-29
申请人： Duan-Fu Hsu , Armin Liebchen
发明人： Duan-Fu Hsu , Armin Liebchen
IPC分类号： G03F1/00 , G03F1/36 , G03F7/20 , H01L21/027 , G06F17/50
CPC分类号： G03F7/70441 , G03F1/36 , G03F7/70125 , G03F7/70425
摘要： Disclose is a method, program product and apparatus for optimizing numerical aperture (“NA”) and sigma of a lithographic system based on the target layout. A pitch or interval analysis is performed to identify the distribution of critical pitch over the design. Based on the pitch or interval analysis, a critical dense pitch is identified. NA, sigma-in, sigma-out parameters are optimized such that the critical feature will print with or without bias adjustment. For features other than the critical dense features, adjustments are made in accordance with OPC, and lithographic apparatus settings are further mutually optimized. Accordingly, lithographic apparatus settings may be optimized for any pattern concurrently with OPC.
摘要翻译： Disclose是一种基于目标布局优化光刻系统的数值孔径（“NA”）和sigma的方法，程序产品和设备。执行音调或间隔分析以确定设计上的关键音高的分布。基于间距或间隔分析，确定了一个临界密度。 NA，sigma-in，sigma-out参数被优化，使得临界特征将在有或没有偏置调整的情况下打印。对于临界致密特征以外的特征，根据OPC进行调整，并进一步相互优化光刻设备设置。因此，可以对于与OPC同时的任何图案来优化光刻设备设置。

8. 发明授权

US06738859B2 Method and apparatus for fast aerial image simulation 有权
标题翻译：快速航空图像模拟的方法和装置
公开(公告)号：US06738859B2
公开(公告)日：2004-05-18
申请号：US09948697
申请日：2001-09-10
申请人： Armin Liebchen
发明人： Armin Liebchen
IPC分类号： G06F1750
CPC分类号： G03F1/36 , G03F7/705
摘要： The present invention provides a method and apparatus for simulating an aerial image projected from an optical system, wherein the optical system includes a pupil and a mask. In general, the method comprises the steps of obtaining parameters for the optical system, calculating a kernel based on an orthogonal pupil projection of the parameters of the optical system onto a basis set, obtaining parameters of the mask, calculating a vector based on an orthogonal mask projection of the parameters of the mask onto a basis set, calculating a field intensity distribution using the kernel and the vector, and obtaining aerial image data from the field intensity distribution.
摘要翻译：本发明提供了一种用于模拟从光学系统投影的空间图像的方法和装置，其中所述光学系统包括瞳孔和掩模。通常，该方法包括以下步骤：获得光学系统的参数，基于光学系统的参数的正交光瞳投影计算内核到基准集，获得掩模的参数，基于正交将掩模的参数掩模投影到基础集合上，使用核和向量计算场强分布，以及从场强分布获得空间图像数据。

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