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    • 66. 发明申请
    • OPTICAL TRANSMITTER SUPPLYING OPTICAL SIGNALS HAVING MULTIPLE MODULATION FORMATS
    • 提供多个调制格式的光信号的光传输器
    • US20110229149A1
    • 2011-09-22
    • US12728951
    • 2010-03-22
    • STEPHEN G. GRUBBDavid F. Welch
    • STEPHEN G. GRUBBDavid F. Welch
    • H04B10/04
    • H04B10/506H04B10/5161
    • Consistent with the present disclosure, a compact transmitter is provided that can generate optical signals having different modulation formats depending on optical link requirements. Preferably, the transmitter includes a photonic integrated circuit having multiple lasers and modulators. A control circuit adjusts the drive signals supplied to the modulators such that optical signals having a desired modulation format may be output from the modulators. Thus, for example, the transmitter may be used to output optical signals having a modulation format suitable for long haul or submarine links, as well as for links having a shorter distance. Moreover, the same photonic integrated circuit may supply optical signals with different modulation formats, such that, for example, those optical signals that are dropped along a link, and thus travel a shorter distance, may have a first modulation format, while other optical signals that travel the entire length of the link may have a second modulation format that is more suited for longer distances.
    • 根据本公开,提供了紧凑型发射机,其可以根据光链路要求生成具有不同调制格式的光信号。 优选地,发射机包括具有多个激光器和调制器的光子集成电路。 控制电路调节提供给调制器的驱动信号,使得可以从调制器输出具有所需调制格式的光信号。 因此,例如,发射机可以用于输出具有适合于长距离或潜艇链路的调制格式的光信号,以及具有较短距离的链路。 此外,相同的光子集成电路可以提供具有不同调制格式的光信号,使得例如沿着链路落下并因此行进更短距离的那些光信号可以具有第一调制格式,而其它光信号 传播链路的整个长度的信号可以具有更适合于较长距离的第二调制格式。
    • 67. 发明申请
    • DEGRADATION ADAPTATION NETWORK
    • 降解适应网络
    • US20100080562A1
    • 2010-04-01
    • US12239896
    • 2008-09-29
    • DREW D. PERKINSDavid F. Welch
    • DREW D. PERKINSDavid F. Welch
    • H04J14/08
    • H04J14/0227H04J14/0246H04J14/025H04J14/0279H04L1/0009H04L1/0057
    • Consistent with the present disclosure, based on system requirements or in response to an increase in optical signal-to-noise level of an optical channel, such as a WDM channel, additional FEC bits are inserted into and replace selected data payload bits in each frame carried by the channel. The replaced data payload bits may then be transmitted in subsequent frames on the same channel. As a result, the transmitted frames have a reduced data payload rate, but a higher coding gain. Alternatively, the replaced data payload bits may be included in frames transmitted on another optical channel. In that case, the frames carried by the two channels typically have the same bit length or number of bits and may thus be compliant with the frame length requirements of G.709, for example. Preferably, the number of coding bits may be changed dynamically to obtain different coding gains.
    • 根据本公开内容,基于系统要求或响应于诸如WDM信道的光信道的光信噪比水平的增加,附加的FEC比特被插入并替换每个帧中的选定的数据有效载荷比特 由频道携带 然后可以在相同信道上的后续帧中发送替换的数据有效载荷比特。 结果,所发送的帧具有减少的数据有效载荷速率,但是编码增益更高。 或者,替换的数据有效载荷比特可以包括在另一光信道上发送的帧中。 在这种情况下,由两个信道携带的帧通常具有相同的比特长度或比特数,并且因此可以符合例如G.709的帧长度要求。 优选地,可以动态地改变编码比特的数量以获得不同的编码增益。
    • 70. 发明授权
    • Methods for forming group III-arsenide-nitride semiconductor materials
    • 形成III族砷化物 - 氮化物半导体材料的方法
    • US06342405B1
    • 2002-01-29
    • US09576746
    • 2000-05-23
    • Jo S. MajorDavid F. WelchDonald R. Scifres
    • Jo S. MajorDavid F. WelchDonald R. Scifres
    • H01L2100
    • H01S5/3235C23C16/303C30B25/02C30B29/40H01L33/32H01S5/32H01S5/323H01S5/32341H01S5/32366H01S5/32375
    • Methods are disclosed for forming Group III-arsenide-nitride semiconductor materials. Group III elements are combined with group V elements, including at least nitrogen and arsenic, in concentrations chosen to lattice match commercially available crystalline substrates. Epitaxial growth of these III-V crystals results in direct bandgap materials, which can be used in applications such as light emitting diodes and lasers. Varying the concentrations of the elements in the III-V crystals varies the bandgaps, such that materials emitting light spanning the visible spectra, as well as mid-IR and near-UV emitters, can be created. Conversely, such material can be used to create devices that acquire light and convert the light to electricity, for applications such as full color photodetectors and solar energy collectors. The growth of the III-V crystals can be accomplished by growing thin layers of elements or compounds in sequences that result in the overall lattice match and bandgap desired.
    • 公开了用于形成III族 - 氮化物 - 氮化物半导体材料的方法。 III族元素与V族元素组合,包括至少氮和砷,其浓度选择为与市售的晶体基质匹配。 这些III-V晶体的外延生长导致直接的带隙材料,其可以用于诸如发光二极管和激光器的应用中。 改变III-V晶体中元素的浓度会改变带隙,从而可以产生跨越可见光谱的光的材料,以及中红外和近紫外线发射器。 相反,这种材料可用于产生获得光并将光转换成电的装置,用于诸如全色光电检测器和太阳能收集器的应用。 III-V晶体的生长可以通过在导致总体晶格匹配和带隙期望的序列中生长薄层的元素或化合物来实现。