会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 10. 发明公开
    • Optical semiconductor device and optical communication system
    • Optische Halbleitervorrichtung und optisches Kommunikationssystem
    • EP1065765A2
    • 2001-01-03
    • EP00305431.9
    • 2000-06-28
    • NEC CORPORATION
    • Furushima, Yuji
    • H01S5/026
    • B82Y20/00G02F1/01708G02F1/01725G02F2001/0157G02F2001/01758
    • In an electro-absorption (EA) type of optical modulator using a variation of a quantum level light-emission wavelength caused by an application of an electric field to an absorption layer having a multiple quantum well (MQW) structure, quantum well layers in the MQW absorption layer are varied in thickness or in composition to make a quantum level light-emission wavelength at zero-bias voltage be shorter in a quantum well located in a portion subjected to a weak electric field. This structure unifies extinction curves of quantum wells when a reverse bias voltage is applied to them in order to maintain the enhanced non-linearity of the extinction curve which a single quantum well originally has, and accordingly realizes an EA optical modulator which has a large extinction ratio and an extinction curve with an enhanced non-linearity.
    • 在使用通过向具有多量子阱(MQW)结构的吸收层施加电场而引起的量子级发光波长的变化的电吸收(EA)型光调制器中的量子阱层 MQW吸收层的厚度或组成变化,使得在位于经受弱电场的部分中的量子阱中,零偏置电压下的量子级发光波长较短。 当将反向偏置电压施加到量子阱时,该结构将量子阱的消光曲线统一起来,以保持原来具有单个量子阱的消光曲线的增强的非线性,从而实现具有大消光的EA光调制器 比例和具有增强的非线性的消光曲线。