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61. 发明授权

US09529714B2 Electronic device 有权
标题翻译：电子设备
公开(公告)号：US09529714B2
公开(公告)日：2016-12-27
申请号：US14559509
申请日：2014-12-03
申请人： Yang-Kon Kim , Bo-Mi Lee , Won-Joon Choi , Guk-Cheon Kim , Daisuke Watanabe , Makoto Nagamine , Young-Min Eeh , Koji Ueda , Toshihiko Nagase , Kazuya Sawada
发明人： Yang-Kon Kim , Bo-Mi Lee , Won-Joon Choi , Guk-Cheon Kim , Daisuke Watanabe , Makoto Nagamine , Young-Min Eeh , Koji Ueda , Toshihiko Nagase , Kazuya Sawada
IPC分类号： H01L43/08 , G06F12/08 , G11C11/16
CPC分类号： G06F12/0802 , G11C11/161 , G11C11/1675 , H01L43/08
摘要： An electronic device includes a semiconductor memory, and the semiconductor memory includes a first magnetic layer having a variable magnetization direction; a second magnetic layer having a pinned magnetization direction; and a tunnel barrier layer interposed between the first magnetic layer and the second magnetic layer, wherein the second magnetic layer includes a ferromagnetic material with molybdenum (Mo) added thereto.
摘要翻译：电子设备包括半导体存储器，并且半导体存储器包括具有可变磁化方向的第一磁性层; 具有钉扎磁化方向的第二磁性层; 以及插入在所述第一磁性层和所述第二磁性层之间的隧道势垒层，其中所述第二磁性层包括添加有钼（Mo）的铁磁材料。

62. 发明授权

US09494098B2 Method for detecting combustion noise in internal combustion engine, combustion noise detection device, and device for controlling internal combustion engine 有权
标题翻译：用于检测内燃机燃烧噪声的方法，燃烧噪声检测装置和用于控制内燃机的装置
公开(公告)号：US09494098B2
公开(公告)日：2016-11-15
申请号：US14235271
申请日：2012-07-26
申请人： Kenichiroh Ogata , Daisuke Watanabe , Takashi Okamoto
发明人： Kenichiroh Ogata , Daisuke Watanabe , Takashi Okamoto
IPC分类号： F02D35/02 , F02D41/00 , F02D41/14 , G01H17/00 , F02D41/30 , B60W10/04 , F02D41/40 , F02P5/04 , F02D13/02 , G01M15/12 , F02D41/28
CPC分类号： F02D41/1493 , B60W10/04 , F02D13/0242 , F02D35/027 , F02D41/0007 , F02D41/3017 , F02D41/40 , F02D2041/001 , F02D2041/1432 , F02D2041/288 , F02D2200/025 , F02P5/04 , G01H17/00 , G01M15/12 , Y02T10/128 , Y02T10/144 , Y02T10/18 , Y02T10/44
摘要： Although a method for changing a combustion method taking place in an internal combustion engine depending on running condition is proposed, it can be considered that conditions under which a combustion noise occurs naturally differ with different methods. A detection method of prior art is not compatible with different combustion methods and the accuracy of combustion noise detection was low. Accurate combustion noise detection is enabled by identifying a combustion mode taking place in the internal combustion engine, selecting a sensed frequency or frequency band of a combustion noise sensor that detects a combustion noise in a combustion chamber of the internal combustion engine according to the combustion mode, and detecting a combustion noise.
摘要翻译：虽然提出了根据运行条件改变在内燃机中发生的燃烧方法的方法，但是可以认为燃烧噪声发生的条件自然地因不同的方法而不同。现有技术的检测方法与不同的燃烧方法不兼容，燃烧噪声检测的精度低。通过识别在内燃机中发生的燃烧模式来实现准确的燃烧噪声检测，根据燃烧模式选择检测内燃机的燃烧室中的燃烧噪声的燃烧噪声传感器的感测频率或频带，并且检测燃烧噪声。

63. 发明授权

US09461240B2 Magnetoresistive memory device 有权
标题翻译：磁阻存储器件
公开(公告)号：US09461240B2
公开(公告)日：2016-10-04
申请号：US14814158
申请日：2015-07-30
申请人： Kazuya Sawada , Toshihiko Nagase , Youngmin Eeh , Koji Ueda , Daisuke Watanabe , Makoto Nagamine
发明人： Kazuya Sawada , Toshihiko Nagase , Youngmin Eeh , Koji Ueda , Daisuke Watanabe , Makoto Nagamine
IPC分类号： H01L43/08 , H01L43/02 , H01L43/10
CPC分类号： H01L43/08 , H01L27/228 , H01L43/10
摘要： According to one embodiment, a magnetoresistive memory device includes a first magnetic layer, a second magnetic layer, a nonmagnetic layer provided between the first magnetic layer and the second magnetic layer, and a third magnetic layer provided on a side of the first or second magnetic layer opposite to the nonmagnetic layer. The third magnetic layer has a multilayer film having an artificial lattice structure, and the third magnetic layer is partly microcrystalline or amorphous.
摘要翻译：根据一个实施例，磁阻存储器件包括第一磁性层，第二磁性层，设置在第一磁性层和第二磁性层之间的非磁性层，以及设置在第一或第二磁性层的一侧的第三磁性层层与非磁性层相对。第三磁性层具有具有人造晶格结构的多层膜，第三磁性层是部分微晶或无定形的。

64. 发明授权

US09293695B2 Magnetoresistive element and magnetic random access memory 有权
标题翻译：磁阻元件和磁性随机存取存储器
公开(公告)号：US09293695B2
公开(公告)日：2016-03-22
申请号：US14160166
申请日：2014-01-21
申请人： Koji Ueda , Toshihiko Nagase , Kazuya Sawada , Youngmin Eeh , Daisuke Watanabe , Hiroaki Yoda
发明人： Koji Ueda , Toshihiko Nagase , Kazuya Sawada , Youngmin Eeh , Daisuke Watanabe , Hiroaki Yoda
IPC分类号： H01L43/00 , H01L43/08 , H01L27/22
CPC分类号： H01L43/10 , H01L27/228 , H01L43/02 , H01L43/08
摘要： According to one embodiment, a magnetoresistive element comprises a first magnetic layer, a second magnetic layer, a first nonmagnetic layer, a second nonmagnetic layer, and a third magnetic layer. The first magnetic layer has a variable magnetization direction. The second magnetic layer has an invariable magnetization direction and includes a nonmagnetic material film and a magnetic material film. The first nonmagnetic layer is arranged between the first magnetic layer and the second magnetic layer. The second nonmagnetic layer is arranged on a surface of the second magnetic layer. The third magnetic layer is arranged on a surface of the second nonmagnetic layer. The second nonmagnetic layer is in contact with the nonmagnetic material film included in the second magnetic layer.
摘要翻译：根据一个实施例，磁阻元件包括第一磁性层，第二磁性层，第一非磁性层，第二非磁性层和第三磁性层。第一磁性层具有可变的磁化方向。第二磁性层具有不变的磁化方向，并且包括非磁性材料膜和磁性材料膜。第一非磁性层布置在第一磁性层和第二磁性层之间。第二非磁性层布置在第二磁性层的表面上。第三磁性层布置在第二非磁性层的表面上。第二非磁性层与包含在第二磁性层中的非磁性材料膜接触。

65. 发明授权

US09184374B2 Magnetoresistive element 有权
标题翻译：磁阻元件
公开(公告)号：US09184374B2
公开(公告)日：2015-11-10
申请号：US13963762
申请日：2013-08-09
申请人： Kazuya Sawada , Toshihiko Nagase , Youngmin Eeh , Koji Ueda , Daisuke Watanabe , Masahiko Nakayama , Tadashi Kai , Hiroaki Yoda
发明人： Kazuya Sawada , Toshihiko Nagase , Youngmin Eeh , Koji Ueda , Daisuke Watanabe , Masahiko Nakayama , Tadashi Kai , Hiroaki Yoda
IPC分类号： H01L29/82 , H01L43/08 , H01L43/10
CPC分类号： H01L43/08 , H01L43/10
摘要： According to one embodiment, a magnetoresistive element includes first, second and third magnetic layers, and first and second nonmagnetic layers. The third magnetic layer has stack layers including a first stack layer close to the second magnetic layer, and a second stack layer far from the second magnetic layer. Each of the first and second stack layers includes a first layer made of a ferromagnetic material and a second layer made of a nonmagnetic material, and a first ratio of a film thickness of the first layer to that of the second layer in the first stack layer is higher than a second ratio of a film thickness of the first layer to that of the second layer in the second stack layer.
摘要翻译：根据一个实施例，磁阻元件包括第一，第二和第三磁性层以及第一和第二非磁性层。第三磁性层具有包括靠近第二磁性层的第一堆叠层和远离第二磁性层的第二堆叠层的堆叠层。第一和第二堆叠层中的每一个包括由铁磁材料制成的第一层和由非磁性材料制成的第二层，并且第一层的第一层的膜厚度与第二层的膜厚度的第一比率高于第二层的第一层的膜厚度与第二层的膜厚度的第二比率。

66. 发明授权

US08792044B2 Image pickup device and method for manufacturing the image pickup device 有权
标题翻译：用于制造图像拾取装置的图像拾取装置和方法
公开(公告)号：US08792044B2
公开(公告)日：2014-07-29
申请号：US13503826
申请日：2010-10-26
申请人： Toshiyuki Imai , Tougo Teramoto , Yasushi Iijima , Shigeru Hosoe , Akira Sato , Yuiti Fujii , Daisuke Watanabe
发明人： Toshiyuki Imai , Tougo Teramoto , Yasushi Iijima , Shigeru Hosoe , Akira Sato , Yuiti Fujii , Daisuke Watanabe
IPC分类号： H04N5/225
CPC分类号： G02B13/001 , G02B13/0085 , H04N5/2254 , H04N5/2257
摘要： Disclosed is an image pickup device, by which cut resistance at the time of cutting a wafer lens is reduced, high production efficiency is maintained, and excellent optical characteristics are obtained. The image pickup device has a first lens block, a second lens block, a spacer, and a sensor unit. The side surface section of the first lens block, the side surface section of the second lens block, and the side surface section of the spacer are formed on the same plane. A lens cover that covers the first and the second lens blocks is provided in a step formed by respective side surface sections of the first lens block, the second lens block and the spacer, and the side surface section of the sensor unit.
摘要翻译：公开了一种图像拾取装置，通过该方式，切割晶片透镜时的切割电阻降低，生产效率高，并且获得了优异的光学特性。图像拾取装置具有第一透镜块，第二透镜块，间隔件和传感器单元。第一透镜块的侧表面部分，第二透镜块的侧表面部分和间隔件的侧表面部分形成在同一平面上。覆盖第一透镜块和第二透镜块的透镜盖设置在由第一透镜块，第二透镜块和间隔件的相应侧表面部分以及传感器单元的侧表面部分形成的台阶中。

67. 发明授权

US08765311B2 Fuel cell 有权
标题翻译：燃料电池
公开(公告)号：US08765311B2
公开(公告)日：2014-07-01
申请号：US12528599
申请日：2008-02-25
申请人： Hideyuki Oozu , Yukinori Akamoto , Yuuichi Sato , Genta Oomichi , Hirofumi Kan , Daisuke Watanabe , Nobuyasu Negishi , Yuichi Yoshida , Asako Sato
发明人： Hideyuki Oozu , Yukinori Akamoto , Yuuichi Sato , Genta Oomichi , Hirofumi Kan , Daisuke Watanabe , Nobuyasu Negishi , Yuichi Yoshida , Asako Sato
IPC分类号： H01M8/06 , H01M8/10 , H01M8/04
CPC分类号： H01M8/04156 , H01M8/04171 , H01M8/04186 , H01M8/04201 , H01M8/04291 , H01M8/0662 , H01M8/0668 , H01M8/1011 , H01M8/241 , H01M8/2455 , H01M2250/20 , Y02E60/523 , Y02T90/32
摘要： A fuel cell (1) includes an electromotive unit (2) having a membrane electrode assembly (MEA) (12), a fuel storage unit (4) storing a liquid fuel, and a fuel supply mechanism (3) supplying the fuel from the fuel storage unit (4) to a fuel electrode (7) of the membrane electrode assembly (12). The membrane electrode assembly (12) has a gas vent hole (17) provided in a manner to penetrate through at least an electrolyte membrane (11) to let a gas component generated on a side of the fuel electrode (7) escape to a side of an air electrode (10).
摘要翻译：燃料电池（1）包括具有膜电极组件（MEA）（12）的电动单元（2），存储液体燃料的燃料存储单元（4），以及从燃料供给机构燃料存储单元（4）连接到膜电极组件（12）的燃料电极（7）。膜电极组件（12）具有以至少透过电解质膜（11）的方式设置的气体通气孔（17），以使在燃料电极（7）侧产生的气体成分逸出到侧面的空气电极（10）。

68. 发明授权

US08669628B2 Magnetoresistive element and magnetic memory using the same 有权
标题翻译：磁阻元件和使用其的磁存储器
公开(公告)号：US08669628B2
公开(公告)日：2014-03-11
申请号：US13424072
申请日：2012-03-19
申请人： Koji Ueda , Katsuya Nishiyama , Toshihiko Nagase , Daisuke Watanabe , Eiji Kitagawa , Tadashi Kai
发明人： Koji Ueda , Katsuya Nishiyama , Toshihiko Nagase , Daisuke Watanabe , Eiji Kitagawa , Tadashi Kai
IPC分类号： H01L29/82
CPC分类号： H01L27/228 , G11C11/161 , H01L43/08
摘要： According to one embodiment, a magnetoresistive element includes the following configuration. First nonmagnetic layer is provided between the first magnetic layer (storage layer) and the second magnetic layer (reference layer). Third magnetic layer is formed on a surface of the storage layer, which is opposite to a surface on which the first nonmagnetic layer is formed. Fourth magnetic layer is formed on a surface of the reference layer, which is opposite to a surface on which the first nonmagnetic layer is formed. The third and fourth magnetic layers have a magnetization antiparallel to the magnetization of the storage layer. Second nonmagnetic layer is located between the storage and third magnetic layers. Third nonmagnetic layer is located between the reference and fourth magnetic layers. The thickness of the fourth magnetic layer is smaller than that of the third magnetic layer.
摘要翻译：根据一个实施例，磁阻元件包括以下构造。第一非磁性层设置在第一磁性层（存储层）和第二磁性层（参考层）之间。第三磁性层形成在存储层的与形成有第一非磁性层的表面相反的表面上。第四磁性层形成在与形成第一非磁性层的表面相反的参考层的表面上。第三和第四磁性层具有与存储层的磁化反平行的磁化。第二非磁性层位于存储和第三磁性层之间。第三非磁性层位于参考和第四磁性层之间。第四磁性层的厚度小于第三磁性层的厚度。

69. 发明授权

US08659103B2 Magnetoresistive element and magnetic memory using the same 有权
标题翻译：磁阻元件和使用其的磁存储器
公开(公告)号：US08659103B2
公开(公告)日：2014-02-25
申请号：US13424136
申请日：2012-03-19
申请人： Daisuke Watanabe , Katsuya Nishiyama , Toshihiko Nagase , Koji Ueda , Tadashi Kai
发明人： Daisuke Watanabe , Katsuya Nishiyama , Toshihiko Nagase , Koji Ueda , Tadashi Kai
IPC分类号： H01L29/82 , G11C11/02
CPC分类号： H01L27/228 , H01L43/08 , H01L43/10
摘要： According to one embodiment, a magnetoresistive element includes the following configuration. A first magnetic layer has an invariable magnetization. A second magnetic layer has a variable magnetization. A nonmagnetic layer is provided between the first and the second magnetic layers. The first magnetic layer has a structure in which first, second and third magnetic material films and a nonmagnetic material film are stacked. The first magnetic material film is provided in contact with the nonmagnetic layer, the nonmagnetic material film is provided in contact with the first magnetic material film, the second magnetic material film is provided in contact with the nonmagnetic material film, and the third magnetic material film is provided in contact with the second magnetic material film. The second magnetic material film has a Co concentration higher than that of the first magnetic material film.
摘要翻译：根据一个实施例，磁阻元件包括以下构造。第一磁性层具有不变的磁化。第二磁性层具有可变磁化强度。在第一和第二磁性层之间提供非磁性层。第一磁性层具有堆叠第一，第二和第三磁性材料膜和非磁性材料膜的结构。第一磁性材料膜设置成与非磁性层接触，非磁性材料膜设置成与第一磁性材料膜接触，第二磁性材料膜设置成与非磁性材料膜接触，并且第三磁性材料膜设置成与第二磁性材料膜接触。第二磁性材料膜的Co浓度高于第一磁性材料膜。

70. 发明授权

US08643412B2 Test apparatus, transmission apparatus, receiving apparatus, test method, transmission method and receiving method 有权
标题翻译：测试装置，传输装置，接收装置，测试方法，传输方法和接收方法
公开(公告)号：US08643412B2
公开(公告)日：2014-02-04
申请号：US13026155
申请日：2011-02-11
申请人： Daisuke Watanabe
发明人： Daisuke Watanabe
IPC分类号： H03L7/00
CPC分类号： G01R31/31932 , G01R31/31726
摘要： Provided is a test apparatus that tests a device under test, comprising a phase comparing section that compares a phase of an internal clock generated in the test apparatus and a phase of a clock superimposed on a device signal output by the device under test; an adjusting section that adjusts a phase shift amount of the internal clock with respect to the device signal, based on the phase comparison result; an acquiring section that acquires the device signal according to the internal clock whose phase shift amount with respect to the device signal is adjusted; and an inhibiting section that inhibits change of the phase shift amount based on the phase comparison result, for at least a portion of a period during which the clock is not superimposed on the device signal. Also provided is a test method relating to the test apparatus.
摘要翻译：提供了一种测试被测设备的测试装置，包括相位比较部分，其比较测试装置中产生的内部时钟的相位和叠加在由被测器件输出的器件信号上的时钟的相位; 调整部，其根据所述相位比较结果调整所述内部时钟相对于所述装置信号的相移量; 获取部，其根据调整了相对于所述装置信号的相移量的内部时钟获取所述装置信号; 以及禁止部，其在所述时钟未叠加在所述装置信号上的周期的至少一部分期间，基于所述相位比较结果，禁止所述相位偏移量的变化。还提供了与测试装置相关的测试方法。

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