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1. 发明申请

US20130010532A1 MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY USING THE SAME 有权
公开(公告)号：US20130010532A1
公开(公告)日：2013-01-10
申请号：US13427732
申请日：2012-03-22
申请人： Toshihiko Nagase , Eiji Kitagawa , Katsuya Nishiyama , Tadashi Kai , Koji Ueda , Daisuke Watanabe
发明人： Toshihiko Nagase , Eiji Kitagawa , Katsuya Nishiyama , Tadashi Kai , Koji Ueda , Daisuke Watanabe
IPC分类号： G11C11/15 , H01L29/82 , B82Y99/00
CPC分类号： H01L43/08 , G11C11/161 , H01F10/123 , H01F10/3272 , H01F10/3286 , H01L43/02 , H01L43/10
摘要： According to one embodiment, a magnetoresistive element includes first and second magnetic layers and a first nonmagnetic layer. The first magnetic layer has an axis of easy magnetization perpendicular to a film plane, and a variable magnetization. The second magnetic layer has an axis of easy magnetization perpendicular to a film plane, and an invariable magnetization. The first nonmagnetic layer is provided between the first and second magnetic layers. The second magnetic layer includes third and fourth magnetic layers, and a second nonmagnetic layer formed between the third and fourth magnetic layers. The third magnetic layer is in contact with the first nonmagnetic layer and includes Co and at least one of Zr, Nb, Mo, Hf, Ta, and W.

2. 发明申请

US20130001713A1 MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY USING THE SAME 有权
标题翻译：磁性元件和使用它的磁记忆
公开(公告)号：US20130001713A1
公开(公告)日：2013-01-03
申请号：US13424072
申请日：2012-03-19
申请人： Koji Ueda , Katsuya Nishiyama , Toshihiko Nagase , Daisuke Watanabe , Eiji Kitagawa , Tadashi Kai
发明人： Koji Ueda , Katsuya Nishiyama , Toshihiko Nagase , Daisuke Watanabe , Eiji Kitagawa , Tadashi Kai
IPC分类号： H01L29/82
CPC分类号： H01L27/228 , G11C11/161 , H01L43/08
摘要： According to one embodiment, a magnetoresistive element includes the following configuration. First nonmagnetic layer is provided between the first magnetic layer (storage layer) and the second magnetic layer (reference layer). Third magnetic layer is formed on a surface of the storage layer, which is opposite to a surface on which the first nonmagnetic layer is formed. Fourth magnetic layer is formed on a surface of the reference layer, which is opposite to a surface on which the first nonmagnetic layer is formed. The third and fourth magnetic layers have a magnetization antiparallel to the magnetization of the storage layer. Second nonmagnetic layer is located between the storage and third magnetic layers. Third nonmagnetic layer is located between the reference and fourth magnetic layers. The thickness of the fourth magnetic layer is smaller than that of the third magnetic layer.
摘要翻译：根据一个实施例，磁阻元件包括以下构造。第一非磁性层设置在第一磁性层（存储层）和第二磁性层（参考层）之间。第三磁性层形成在存储层的与形成有第一非磁性层的表面相反的表面上。第四磁性层形成在与形成第一非磁性层的表面相反的参考层的表面上。第三和第四磁性层具有与存储层的磁化反平行的磁化。第二非磁性层位于存储和第三磁性层之间。第三非磁性层位于参考和第四磁性层之间。第四磁性层的厚度小于第三磁性层的厚度。

3. 发明授权

US08670268B2 Magnetoresistive element and magnetic memory using the same 有权
标题翻译：磁阻元件和使用其的磁存储器
公开(公告)号：US08670268B2
公开(公告)日：2014-03-11
申请号：US13427732
申请日：2012-03-22
申请人： Toshihiko Nagase , Eiji Kitagawa , Katsuya Nishiyama , Tadashi Kai , Koji Ueda , Daisuke Watanabe
发明人： Toshihiko Nagase , Eiji Kitagawa , Katsuya Nishiyama , Tadashi Kai , Koji Ueda , Daisuke Watanabe
IPC分类号： G11C11/00 , G11C11/14 , G11C11/15 , H01L29/82
CPC分类号： H01L43/08 , G11C11/161 , H01F10/123 , H01F10/3272 , H01F10/3286 , H01L43/02 , H01L43/10
摘要： According to one embodiment, a magnetoresistive element includes first and second magnetic layers and a first nonmagnetic layer. The first magnetic layer has an axis of easy magnetization perpendicular to a film plane, and a variable magnetization. The second magnetic layer has an axis of easy magnetization perpendicular to a film plane, and an invariable magnetization. The first nonmagnetic layer is provided between the first and second magnetic layers. The second magnetic layer includes third and fourth magnetic layers, and a second nonmagnetic layer formed between the third and fourth magnetic layers. The third magnetic layer is in contact with the first nonmagnetic layer and includes Co and at least one of Zr, Nb, Mo, Hf, Ta, and W.
摘要翻译：根据一个实施例，磁阻元件包括第一和第二磁性层和第一非磁性层。第一磁性层具有垂直于膜平面的容易磁化的轴和可变磁化。第二磁性层具有垂直于膜平面的容易磁化的轴和不变的磁化。第一非磁性层设置在第一和第二磁性层之间。第二磁性层包括第三和第四磁性层，以及形成在第三和第四磁性层之间的第二非磁性层。第三磁性层与第一非磁性层接触，包括Co和Zr，Nb，Mo，Hf，Ta和W中的至少一种。

4. 发明授权

US08669628B2 Magnetoresistive element and magnetic memory using the same 有权
标题翻译：磁阻元件和使用其的磁存储器
公开(公告)号：US08669628B2
公开(公告)日：2014-03-11
申请号：US13424072
申请日：2012-03-19
申请人： Koji Ueda , Katsuya Nishiyama , Toshihiko Nagase , Daisuke Watanabe , Eiji Kitagawa , Tadashi Kai
发明人： Koji Ueda , Katsuya Nishiyama , Toshihiko Nagase , Daisuke Watanabe , Eiji Kitagawa , Tadashi Kai
IPC分类号： H01L29/82
CPC分类号： H01L27/228 , G11C11/161 , H01L43/08
摘要： According to one embodiment, a magnetoresistive element includes the following configuration. First nonmagnetic layer is provided between the first magnetic layer (storage layer) and the second magnetic layer (reference layer). Third magnetic layer is formed on a surface of the storage layer, which is opposite to a surface on which the first nonmagnetic layer is formed. Fourth magnetic layer is formed on a surface of the reference layer, which is opposite to a surface on which the first nonmagnetic layer is formed. The third and fourth magnetic layers have a magnetization antiparallel to the magnetization of the storage layer. Second nonmagnetic layer is located between the storage and third magnetic layers. Third nonmagnetic layer is located between the reference and fourth magnetic layers. The thickness of the fourth magnetic layer is smaller than that of the third magnetic layer.
摘要翻译：根据一个实施例，磁阻元件包括以下构造。第一非磁性层设置在第一磁性层（存储层）和第二磁性层（参考层）之间。第三磁性层形成在存储层的与形成有第一非磁性层的表面相反的表面上。第四磁性层形成在与形成第一非磁性层的表面相反的参考层的表面上。第三和第四磁性层具有与存储层的磁化反平行的磁化。第二非磁性层位于存储和第三磁性层之间。第三非磁性层位于参考和第四磁性层之间。第四磁性层的厚度小于第三磁性层的厚度。

5. 发明授权

US08895162B2 Magnetoresistive element and magnetic memory 有权
标题翻译：磁阻元件和磁记忆体
公开(公告)号：US08895162B2
公开(公告)日：2014-11-25
申请号：US13236028
申请日：2011-09-19
申请人： Katsuya Nishiyama , Shigemi Mizukami , Terunobu Miyazaki , Hiroaki Yoda , Tadashi Kai , Tatsuya Kishi , Daisuke Watanabe , Mikihiko Oogane , Yasuo Ando , Masatoshi Yoshikawa , Toshihiko Nagase , Eiji Kitagawa , Tadaomi Daibou , Makoto Nagamine , Chunlan Feng
发明人： Katsuya Nishiyama , Wu Feng , Shigemi Mizukami , Terunobu Miyazaki , Hiroaki Yoda , Tadashi Kai , Tatsuya Kishi , Daisuke Watanabe , Mikihiko Oogane , Yasuo Ando , Masatoshi Yoshikawa , Toshihiko Nagase , Eiji Kitagawa , Tadaomi Daibou , Makoto Nagamine
IPC分类号： G01R33/09 , H01L43/08 , H01F10/32 , H01L43/10 , H01F10/193 , G11C11/16 , H01L27/22 , B82Y25/00 , H01F10/28
CPC分类号： H01L27/228 , B82Y25/00 , G01R33/09 , G11C11/16 , G11C11/161 , H01F10/123 , H01F10/1933 , H01F10/1936 , H01F10/28 , H01F10/3254 , H01F10/3272 , H01F10/3286 , H01F10/329 , H01L43/08 , H01L43/10 , Y10T428/1121 , Y10T428/1143
摘要： A magnetoresistive element according to an embodiment includes: a base layer; a first magnetic layer formed on the base layer and having a changeable magnetization direction with an easy axis of magnetization in a direction perpendicular to a film plane; a first nonmagnetic layer formed on the first magnetic layer; and a second magnetic layer formed on the first nonmagnetic layer and having a fixed magnetization layer with an easy axis of magnetization in a direction perpendicular to the film plane. The first magnetic layer includes a ferrimagnetic layer having a DO22 structure or an L10 structure, the ferrimagnetic layer has a c-axis oriented in a direction perpendicular to the film plane, and the magnetization direction of the first magnetic layer is changeable by a current flowing through the first magnetic layer, the first nonmagnetic layer, and the second magnetic layer.
摘要翻译：根据实施例的磁阻元件包括：基底层; 第一磁性层，形成在所述基底层上，并且具有在垂直于膜平面的方向上具有容易的磁化轴的可变磁化方向; 形成在第一磁性层上的第一非磁性层; 以及形成在第一非磁性层上并且具有在垂直于膜平面的方向上具有易磁化轴的固定磁化层的第二磁性层。第一磁性层包括具有DO22结构或L10结构的铁氧体层，所述铁氧体层具有在垂直于所述膜平面的方向上取向的c轴，并且所述第一磁性层的磁化方向可以由电流流过通过第一磁性层，第一非磁性层和第二磁性层。

6. 发明申请

US20120088125A1 MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY 有权
标题翻译：磁性元件和磁记忆
公开(公告)号：US20120088125A1
公开(公告)日：2012-04-12
申请号：US13236028
申请日：2011-09-19
申请人： Katsuya NISHIYAMA , Wu Feng , Chunlan Feng , Shigemi Mizukami , Terunobu Miyazaki , Hiroaki Yoda , Tadashi Kai , Tatsuya Kishi , Daisuke Watanabe , Mikihiko Oogane , Yasuo Ando , Masatoshi Yoshikawa , Toshihiko Nagase , Eiji Kitagawa , Tadaomi Daibou , Makoto Nagamine
发明人： Katsuya NISHIYAMA , Wu Feng , Chunlan Feng , Shigemi Mizukami , Terunobu Miyazaki , Hiroaki Yoda , Tadashi Kai , Tatsuya Kishi , Daisuke Watanabe , Mikihiko Oogane , Yasuo Ando , Masatoshi Yoshikawa , Toshihiko Nagase , Eiji Kitagawa , Tadaomi Daibou , Makoto Nagamine
IPC分类号： G11B5/66
CPC分类号： H01L27/228 , B82Y25/00 , G01R33/09 , G11C11/16 , G11C11/161 , H01F10/123 , H01F10/1933 , H01F10/1936 , H01F10/28 , H01F10/3254 , H01F10/3272 , H01F10/3286 , H01F10/329 , H01L43/08 , H01L43/10 , Y10T428/1121 , Y10T428/1143
摘要： A magnetoresistive element according to an embodiment includes: a base layer; a first magnetic layer formed on the base layer and having a changeable magnetization direction with an easy axis of magnetization in a direction perpendicular to a film plane; a first nonmagnetic layer formed on the first magnetic layer; and a second magnetic layer formed on the first nonmagnetic layer and having a fixed magnetization layer with an easy axis of magnetization in a direction perpendicular to the film plane. The first magnetic layer includes a ferrimagnetic layer having a DO22 structure or an L10 structure, the ferrimagnetic layer has a c-axis oriented in a direction perpendicular to the film plane, and the magnetization direction of the first magnetic layer is changeable by a current flowing through the first magnetic layer, the first nonmagnetic layer, and the second magnetic layer.
摘要翻译：根据实施例的磁阻元件包括：基底层; 第一磁性层，形成在所述基底层上，并且具有在垂直于膜平面的方向上具有容易的磁化轴的可变磁化方向; 形成在第一磁性层上的第一非磁性层; 以及形成在第一非磁性层上并且具有在垂直于膜平面的方向上具有易磁化轴的固定磁化层的第二磁性层。第一磁性层包括具有DO22结构或L10结构的铁氧体层，所述铁氧体层具有在垂直于所述膜平面的方向上取向的c轴，并且所述第一磁性层的磁化方向可以由电流流过通过第一磁性层，第一非磁性层和第二磁性层。

7. 发明授权

US08659103B2 Magnetoresistive element and magnetic memory using the same 有权
标题翻译：磁阻元件和使用其的磁存储器
公开(公告)号：US08659103B2
公开(公告)日：2014-02-25
申请号：US13424136
申请日：2012-03-19
申请人： Daisuke Watanabe , Katsuya Nishiyama , Toshihiko Nagase , Koji Ueda , Tadashi Kai
发明人： Daisuke Watanabe , Katsuya Nishiyama , Toshihiko Nagase , Koji Ueda , Tadashi Kai
IPC分类号： H01L29/82 , G11C11/02
CPC分类号： H01L27/228 , H01L43/08 , H01L43/10
摘要： According to one embodiment, a magnetoresistive element includes the following configuration. A first magnetic layer has an invariable magnetization. A second magnetic layer has a variable magnetization. A nonmagnetic layer is provided between the first and the second magnetic layers. The first magnetic layer has a structure in which first, second and third magnetic material films and a nonmagnetic material film are stacked. The first magnetic material film is provided in contact with the nonmagnetic layer, the nonmagnetic material film is provided in contact with the first magnetic material film, the second magnetic material film is provided in contact with the nonmagnetic material film, and the third magnetic material film is provided in contact with the second magnetic material film. The second magnetic material film has a Co concentration higher than that of the first magnetic material film.
摘要翻译：根据一个实施例，磁阻元件包括以下构造。第一磁性层具有不变的磁化。第二磁性层具有可变磁化强度。在第一和第二磁性层之间提供非磁性层。第一磁性层具有堆叠第一，第二和第三磁性材料膜和非磁性材料膜的结构。第一磁性材料膜设置成与非磁性层接触，非磁性材料膜设置成与第一磁性材料膜接触，第二磁性材料膜设置成与非磁性材料膜接触，并且第三磁性材料膜设置成与第二磁性材料膜接触。第二磁性材料膜的Co浓度高于第一磁性材料膜。

8. 发明授权

US09178137B2 Magnetoresistive element and magnetic memory 有权
标题翻译：磁阻元件和磁记忆体
公开(公告)号：US09178137B2
公开(公告)日：2015-11-03
申请号：US13963682
申请日：2013-08-09
申请人： Youngmin Eeh , Katsuya Nishiyama , Daisuke Ikeno , Toshihiko Nagase , Tadashi Kai , Daisuke Watanabe
发明人： Youngmin Eeh , Katsuya Nishiyama , Daisuke Ikeno , Toshihiko Nagase , Tadashi Kai , Daisuke Watanabe
IPC分类号： H01L43/08 , H01L43/12 , H01L27/22
CPC分类号： H01L43/12 , H01L27/226 , H01L43/08
摘要： A magnetoresistive element includes first and magnetic layers, first and second non-magnetic layers and a W layer. Each of the first and second magnetic layers includes an axis of easy magnetization in a direction perpendicular to a film plane. The first magnetic layer has a variable magnetization direction. The second magnetic layer has an invariable magnetization direction. The first non-magnetic layer is provided between the first and second magnetic layers. The second non-magnetic layer is arranged on a surface of the first magnetic layer opposite to a surface on which the first non-magnetic layer is arranged and contains MgO. The W layer is arranged on a surface of the second non-magnetic layer opposite to a surface on which the first magnetic layer is arranged, and is in contact with the surface of the second non-magnetic layer.
摘要翻译：磁阻元件包括第一和第二磁性层，第一和第二非磁性层以及W层。第一和第二磁性层中的每一个包括在垂直于膜平面的方向上易磁化的轴。第一磁性层具有可变的磁化方向。第二磁性层具有不变的磁化方向。第一非磁性层设置在第一和第二磁性层之间。第二非磁性层布置在第一磁性层的与布置第一非磁性层的表面相对的表面上并且包含MgO。 W层布置在第二非磁性层的与布置第一磁性层的表面相对的表面上，并与第二非磁性层的表面接触。

9. 发明授权

US09269890B2 Magnetoresistance effect element with shift canceling layer having pattern area greater than that of storage layer 有权
标题翻译：磁阻效应元件具有移位消除层，其图案面积大于存储层的图案面积
公开(公告)号：US09269890B2
公开(公告)日：2016-02-23
申请号：US14014210
申请日：2013-08-29
申请人： Masahiko Nakayama , Toshihiko Nagase , Tadashi Kai , Youngmin Eeh , Koji Ueda , Yutaka Hashimoto , Daisuke Watanabe , Kazuya Sawada
发明人： Masahiko Nakayama , Toshihiko Nagase , Tadashi Kai , Youngmin Eeh , Koji Ueda , Yutaka Hashimoto , Daisuke Watanabe , Kazuya Sawada
IPC分类号： H01L29/82 , H01L43/08 , H01F10/32 , H01F41/32
CPC分类号： H01L43/08 , H01F10/3254 , H01F10/3259 , H01F41/325
摘要： According to one embodiment, a magnetoresistance effect element includes a reference layer, a shift canceling layer, a storage layer provided between the reference layer and the shift canceling layer, a tunnel barrier layer provided between the reference layer and the storage layer, and a spacer layer provided between the shift canceling layer and the storage layer, wherein a pattern of the storage layer is provided inside a pattern of the shift canceling layer when the patterns of the storage layer and the shift canceling layer are viewed from a direction perpendicular to the patterns of the storage layer and the shift canceling layer.
摘要翻译：根据一个实施例，磁阻效应元件包括参考层，移位消除层，设置在参考层和移位消除层之间的存储层，设置在参考层和存储层之间的隧道势垒层，以及间隔物设置在移位消除层和存储层之间的层，其中当从垂直于图案的方向观察存储层和移位消除层的图案时，存储层的图案设置在移位消除层的图案内部的存储层和移位消除层。

10. 发明授权

US09184374B2 Magnetoresistive element 有权
标题翻译：磁阻元件
公开(公告)号：US09184374B2
公开(公告)日：2015-11-10
申请号：US13963762
申请日：2013-08-09
申请人： Kazuya Sawada , Toshihiko Nagase , Youngmin Eeh , Koji Ueda , Daisuke Watanabe , Masahiko Nakayama , Tadashi Kai , Hiroaki Yoda
发明人： Kazuya Sawada , Toshihiko Nagase , Youngmin Eeh , Koji Ueda , Daisuke Watanabe , Masahiko Nakayama , Tadashi Kai , Hiroaki Yoda
IPC分类号： H01L29/82 , H01L43/08 , H01L43/10
CPC分类号： H01L43/08 , H01L43/10
摘要： According to one embodiment, a magnetoresistive element includes first, second and third magnetic layers, and first and second nonmagnetic layers. The third magnetic layer has stack layers including a first stack layer close to the second magnetic layer, and a second stack layer far from the second magnetic layer. Each of the first and second stack layers includes a first layer made of a ferromagnetic material and a second layer made of a nonmagnetic material, and a first ratio of a film thickness of the first layer to that of the second layer in the first stack layer is higher than a second ratio of a film thickness of the first layer to that of the second layer in the second stack layer.
摘要翻译：根据一个实施例，磁阻元件包括第一，第二和第三磁性层以及第一和第二非磁性层。第三磁性层具有包括靠近第二磁性层的第一堆叠层和远离第二磁性层的第二堆叠层的堆叠层。第一和第二堆叠层中的每一个包括由铁磁材料制成的第一层和由非磁性材料制成的第二层，并且第一层的第一层的膜厚度与第二层的膜厚度的第一比率高于第二层的第一层的膜厚度与第二层的膜厚度的第二比率。

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