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61. 发明授权

US07260256B2 Method and system for inspecting a pattern 失效
标题翻译：检查图案的方法和系统
公开(公告)号：US07260256B2
公开(公告)日：2007-08-21
申请号：US09571938
申请日：2000-05-16
申请人： Takashi Hiroi , Maki Tanaka , Masahiro Watanabe , Asahiro Kuni , Hiroyuki Shinada , Mari Nozoe , Aritoshi Sugimoto , Chie Shishido
发明人： Takashi Hiroi , Maki Tanaka , Masahiro Watanabe , Asahiro Kuni , Hiroyuki Shinada , Mari Nozoe , Aritoshi Sugimoto , Chie Shishido
IPC分类号： G06K9/00
CPC分类号： G06T7/001 , G06T2207/10056 , G06T2207/30148
摘要： The present invention relates to detection of defects with simple specification of the coordinates, in the inspection of an object having a plurality of patterns in which a portion having the two-dimensional repetition and portions having the repetition only in the X direction and in the Y direction are mixedly present. The cross comparison between a notice point and comparison points, for example which are repetitive pitches away from the notice point, is carried out, and only the portion having the difference which can be found out with any of the comparison points is extracted as a defect candidate, which results in that the portion having the two-dimensional repetition as well as the portion having the repetition only in the X direction or in the Y direction can be inspected. As a result, while the portion, such as an isolated point, having no repetition both in the X direction and in the Y direction is extracted as the defect candidate, the defect candidate is not treated as the defect in the case where the defect candidate of interest occurs regularly in a plurality of objects to be inspected, so that such a defect candidate is excluded to extract only a true defect.
摘要翻译：本发明涉及通过简单的坐标指定来检测缺陷，在检查具有多个图案的物体时，其中具有二维重复的部分和仅在X方向上重复的部分和Y 方向混合存在。执行通知点和比较点之间的交叉比较，例如，距离通知点的重复间距是比较点，并且只有具有任何比较点可以找出的具有差异的部分被提取为缺陷候选，这导致可以检查具有二维重复的部分以及仅在X方向或Y方向上具有重复的部分。结果，虽然提取了在X方向和Y方向上都没有重复的诸如孤立点的部分作为缺陷候选，但是在缺陷候选者的情况下，缺陷候选不被视为缺陷感兴趣的事件定期发生在要检查的多个对象中，因此排除这样的缺陷候选者仅提取真实的缺陷。

62. 发明授权

US07133550B2 Pattern inspection method and apparatus 有权
标题翻译：图案检验方法及装置
公开(公告)号：US07133550B2
公开(公告)日：2006-11-07
申请号：US09986299
申请日：2001-11-08
申请人： Takashi Hiroi , Masahiro Watanabe , Chie Shishido , Aritoshi Sugimoto , Maki Tanaka , Hiroshi Miyai , Asahiro Kuni , Yasuhiko Nara
发明人： Takashi Hiroi , Masahiro Watanabe , Chie Shishido , Aritoshi Sugimoto , Maki Tanaka , Hiroshi Miyai , Asahiro Kuni , Yasuhiko Nara
IPC分类号： G06K9/00
CPC分类号： G01N21/9501 , G01N21/956 , G01N2021/8854 , G01N2021/8861 , G01N2021/8864 , G01R31/311 , G03F1/86 , G06T1/0007 , G06T7/0002 , G06T7/001 , G06T2200/24 , G06T2207/10061 , G06T2207/30148 , H01J37/222 , H01J37/265 , H01J37/28 , H01J2237/221 , H01J2237/24592 , H01J2237/28
摘要： A pattern inspection method in which an image can be detected without an image detection error caused by an adverse effect to be given by such factors as ions implanted in a wafer, pattern connection/non-connection, and pattern edge formation. A digital image of an object substrate is attained through microscopic observation thereof, the attained digital image is examined to detect defects, while masking a region pre-registered in terms of coordinates, or while masking a pattern meeting a pre-registered pattern, and an image of each of the defects thus detected is displayed. Further, each of the defects detected using the digital image attained through microscopic observation is checked to determine whether its feature meets a pre-registered feature or not. Defects having a feature that meets the pre-registered feature are so displayed that they can be turned on/off, or they are so displayed as to be distinguishable from the other defects.
摘要翻译：图案检查方法，其中可以检测图像，而不会由于植入在晶片中的离子，图案连接/非连接和图案边缘形成等因素所引起的不利影响而引起图像检测误差。通过显微镜观察目标基板的数字图像，检查所获得的数字图像以检测缺陷，同时掩蔽预先登记的区域上的坐标，或者在掩蔽满足预先注册的图案的图案的同时，显示由此检测到的每个缺陷的图像。此外，检查使用通过显微镜观察获得的数字图像检测到的每个缺陷，以确定其特征是否满足预先注册的特征。具有满足预注册特征的特征的缺陷被显示为可以打开/关闭，或者它们被显示为与其他缺陷区分开。

63. 发明申请

US20050173633A1 Method of measuring dimensions of pattern 有权
标题翻译：测量图案尺寸的方法
公开(公告)号：US20050173633A1
公开(公告)日：2005-08-11
申请号：US11019995
申请日：2004-12-23
申请人： Maki Tanaka , Chie Shishido , Yuji Takagi
发明人： Maki Tanaka , Chie Shishido , Yuji Takagi
IPC分类号： G01B15/00 , G01N23/225 , H01J37/147 , H01J37/22 , H01L21/02 , H01L21/66
CPC分类号： G01N23/2251
摘要： With complexity of a process, the setting of conditions for pattern measurement by an SEM image falls into difficulties. However, the present invention aims to realize the setting of easy and reliable measuring conditions even with respect to a pattern complex in structure. Points characterized in terms of an SEM image signal are calculated as candidates for measurement values. The calculated candidates for measurement values are displayed with being superimposed on the SEM image. An operator selects the optimum one from the displayed candidates and thereby determines the optimum image processing condition for measurement. The relationship between the result of measurement under a predetermined image processing condition and pattern portions has been made clear using model data of a sectional shape and an electron beam simulation image.
摘要翻译：由于处理的复杂性，通过SEM图像进行图案测定的条件的设定变得困难。然而，本发明的目的在于即使对于结构上的图案复合体也能实现容易且可靠的测量条件的设定。以SEM图像信号为特征的点被计算为测量值的候选。计算出的测量值候选被叠加在SEM图像上。操作者从所显示的候选者中选择最佳值，从而确定用于测量的最佳图像处理条件。使用截面形状和电子束模拟图像的模型数据，在预定图像处理条件下的测量结果与图案部分之间的关系已被清楚。

64. 发明授权

US06913861B2 Method of observing exposure condition for exposing semiconductor device and its apparatus and method of manufacturing semiconductor device 有权
标题翻译：观察曝光半导体器件的曝光条件的方法及其装置及制造半导体器件的方法
公开(公告)号：US06913861B2
公开(公告)日：2005-07-05
申请号：US10370369
申请日：2003-02-18
申请人： Chie Shishido , Osamu Komuro , Hidetoshi Morokuma , Ryo Nakagaki , Maki Tanaka , Yuuji Takagi
发明人： Chie Shishido , Osamu Komuro , Hidetoshi Morokuma , Ryo Nakagaki , Maki Tanaka , Yuuji Takagi
IPC分类号： G01B15/00 , G03F7/20 , G03F7/207 , H01J37/28 , H01L21/027 , G03F9/00 , G03C5/00
CPC分类号： G03F7/70625 , G03F7/70641 , H01J37/28 , H01J2237/2817 , Y10S430/143
摘要： Size characteristic quantities are measured at a plural locations. The size characteristic quantities include edge widths, pattern widths, and/or pattern lengths of the electron-beam images of a resist-dropout pattern and a resist-remaining pattern that are located such that the effective exposure quantities differ depending on the places. With the predetermined measurement errors added thereto, the size characteristic quantities are compared with model data that has been created in advance and that causes various exposure conditions to be related with the size characteristic quantities measured under these various exposure conditions. This comparison makes it possible not only to estimate deviation quantities in the exposure quantity and the focal-point position from the correct values, but also to calculate ambiguity degrees of the estimated values. This, allows the implementation of a proper monitoring/controlling of the exposure-condition variations (i.e., the deviations in the exposure quantity and the focal-point position) in the lithography process.
摘要翻译：在多个位置测量尺寸特征量。尺寸特征量包括抗蚀剂落下图案和抗蚀剂剩余图案的电子束图像的边缘宽度，图案宽度和/或图案长度，其位置使得有效曝光量根据位置而不同。随着预定的测量误差被添加到其中，将尺寸特征量与预先创建的模型数据进行比较，并使各种曝光条件与在这些各种曝光条件下测量的尺寸特征量相关。该比较使得不仅可以从正确值估计曝光量和焦点位置中的偏差量，而且可以计算估计值的模糊度。这允许在光刻工艺中实现曝光条件变化（即，曝光量和焦点位置的偏差）的适当监控/控制。

65. 发明授权

US06909930B2 Method and system for monitoring a semiconductor device manufacturing process 有权
标题翻译：用于监测半导体器件制造工艺的方法和系统
公开(公告)号：US06909930B2
公开(公告)日：2005-06-21
申请号：US10124412
申请日：2002-04-18
申请人： Chie Shishido , Yuji Takagi , Masahiro Watanabe , Yasuhiro Yoshitake , Shunichi Matsumoto , Takashi Iizumi , Osamu Komuro , Maki Tanaka , Hidetoshi Morokuma
发明人： Chie Shishido , Yuji Takagi , Masahiro Watanabe , Yasuhiro Yoshitake , Shunichi Matsumoto , Takashi Iizumi , Osamu Komuro , Maki Tanaka , Hidetoshi Morokuma
IPC分类号： H01L21/00 , G06F19/00
CPC分类号： H01L21/67276
摘要： To realize a method for detecting variations in conditions (drift of the exposure and drift of the focus) in exposure equipment at a product wafer level in lithography process, the process is specified in such a way that calculation results of feature quantities such as electron beam images, line profiles, dimensions, etc. under various sets of the exposure and the focus are stored as a library, and an electron beam image of the product wafer is compared with these pieces of data in the library so that detection of drifts of the exposure and the focus a check of the results on the screen can easily be performed.
摘要翻译：为了实现用于在光刻工艺中在产品晶片级的曝光设备中检测条件变化（曝光漂移和焦点偏移）的方法，以这样的方式指定特征量的计算结果，例如电子束将各种曝光和焦点下的图像，线轮廓，尺寸等存储为库，并将产品晶片的电子束图像与库中的这些数据进行比较，以便检测到曝光和重点检查屏幕上的结果可以很容易地执行。

66. 发明申请

US20120274757A1 CHARGED PARTICLE BEAM DEVICE AND A METHOD OF IMPROVING IMAGE QUALITY OF THE SAME 有权
标题翻译：充电颗粒束装置和改进其图像质量的方法
公开(公告)号：US20120274757A1
公开(公告)日：2012-11-01
申请号：US13513280
申请日：2010-11-08
申请人： Jie Bai , Kenji Nakahira , Atsushi Miyamoto , Chie Shishido , Hideyuki Kazumi
发明人： Jie Bai , Kenji Nakahira , Atsushi Miyamoto , Chie Shishido , Hideyuki Kazumi
IPC分类号： H04N7/18
CPC分类号： H01J37/28 , H01J37/244 , H01J2237/24495 , H01J2237/2809 , H01J2237/2817 , H01L22/12
摘要： The invention relates to a technique of improving a contrast of a lower-layer pattern in a multi layer by synthesizing detected signals from a plurality of detectors by using an appropriate allocation ratio in accordance with pattern arrangement. In a charged particle beam device capable of improving image quality by using detected images obtained from a plurality of detectors and in a method of improving the image quality, a method of generating one or more output images from detected images corresponding to respective outputs of the detectors that are arranged at different locations is controlled by using information of a pattern direction, an edge strength, or others calculated from a design data or the detected image. In this manner, a detection area of the detected signals can be expanded by using the plurality of detectors, and the image quality such as the contrast can be improved by synthesizing the detected signals by using the pattern direction or the edge strength calculated from the design data or the detected images.
摘要翻译：本发明涉及一种通过根据图案布置使用合适的分配比例来合成来自多个检测器的检测信号来提高多层下层图案的对比度的技术。在能够通过使用从多个检测器获得的检测图像来提高图像质量的带电粒子束装置中，以及提高图像质量的方法中，提供一种从与检测器的各个输出对应的检测图像生成一个或多个输出图像的方法通过使用从设计数据或检测到的图像计算的图案方向，边缘强度或其他的信息来控制布置在不同位置处的位置。以这种方式，可以通过使用多个检测器来扩展检测信号的检测区域，并且可以通过使用从设计计算出的图案方向或边缘强度合成检测信号来提高诸如对比度的图像质量数据或检测到的图像。

67. 发明授权

US07916929B2 Defect inspection method and apparatus 有权
标题翻译：缺陷检查方法和装置
公开(公告)号：US07916929B2
公开(公告)日：2011-03-29
申请号：US12359452
申请日：2009-01-26
申请人： Shunji Maeda , Kenji Oka , Yukihiro Shibata , Minoru Yoshida , Chie Shishido , Yuji Takagi , Atsushi Yoshida , Kazuo Yamaguchi
发明人： Shunji Maeda , Kenji Oka , Yukihiro Shibata , Minoru Yoshida , Chie Shishido , Yuji Takagi , Atsushi Yoshida , Kazuo Yamaguchi
IPC分类号： G06K9/00
CPC分类号： G06T7/001 , G01N21/9501 , G01N21/95607 , G06T7/0004 , G06T2207/30148
摘要： A method of inspecting patterns, including: adjusting a brightness of at least one of a first bright field image and a second bright field image detected from a specimen and directed to similar patterns on differing parts of the specimen, so as to more closely match a brightness; comparing the images which are adjusted in brightness to match with each other to detect dissimilarities indicative of a defect of the pattern, wherein in adjusting the brightness, the brightness between the first bright field image and the second bright field image is adjusted by performing a gradation conversion of at least one of the brightness between the first bright field image and the second bright field image; and wherein in the comparing, said defect of the pattern is detected by using information of a scattered diagram of brightness of the first bright field image and the second bright field image.
摘要翻译：一种检查图案的方法，包括：调整从样本检测到的第一明视野图像和第二亮视场图像中的至少一个的亮度，并且针对样本的不同部分上的相似图案，以便更紧密地匹配亮度; 将亮度调整后的图像进行比较以相互匹配，以检测表示图案缺陷的不相似性，其中在调整亮度时，通过执行渐变来调整第一亮场图像和第二亮视场图像之间的亮度第一亮场图像和第二亮场图像之间的亮度中的至少一个的转换; 并且其中在所述比较中，通过使用所述第一亮场图像和所述第二亮视场图像的亮度的散射图的信息来检测所述图案的所述缺陷。

68. 发明授权

US07817860B2 Method and apparatus for measuring dimension using electron microscope 有权
标题翻译：使用电子显微镜测量尺寸的方法和装置
公开(公告)号：US07817860B2
公开(公告)日：2010-10-19
申请号：US12326544
申请日：2008-12-02
申请人： Chie Shishido , Mayuka Iwasaki , Hiroki Kawada
发明人： Chie Shishido , Mayuka Iwasaki , Hiroki Kawada
IPC分类号： G06K9/46 , G06K9/00 , G06K9/68
CPC分类号： G06T7/74 , G06T2207/30148
摘要： Disclosed is a scanning electron microscope (SEM) for realizing high-precision dimension measurement of a sample, such as an ArF exposure photoresist, that requires the measurement of a dimension by a low S/N signal waveform. To this end, partial waveforms (or partial images) of sample signal waveforms (or an images) acquired from a dimension measurement target sample and a sample material of the same kind are registered in advance, a measurement target signal waveform (or an image) obtained from the dimension measurement target sample and the sample registration waveform are combined, and a dimension of the dimension measurement target pattern is calculated based on the combination result.
摘要翻译：公开了一种用于实现需要通过低S / N信号波形测量尺寸的样品（例如ArF曝光光致抗蚀剂）的高精度尺寸测量的扫描电子显微镜（SEM）。为此，预先登记从维度测量目标样本和相同种类的样本材料获取的样本信号波形（或图像）的部分波形（或部分图像），测量目标信号波形（或图像）从尺寸测量目标样本和样本登记波形中获得的尺寸测量目标图案的尺寸基于组合结果被计算。

69. 发明申请

US20090214102A1 DEFECT INSPECTION METHOD AND APPARATUS 有权
标题翻译：缺陷检查方法和装置
公开(公告)号：US20090214102A1
公开(公告)日：2009-08-27
申请号：US12359452
申请日：2009-01-26
申请人： Shunji Maeda , Kenji Oka , Yukihiro Shibata , Minoru Yoshida , Chie Shishido , Yuji Takagi , Atsushi Yoshida , Kazuo Yamaguchi
发明人： Shunji Maeda , Kenji Oka , Yukihiro Shibata , Minoru Yoshida , Chie Shishido , Yuji Takagi , Atsushi Yoshida , Kazuo Yamaguchi
IPC分类号： G06K9/00
CPC分类号： G06T7/001 , G01N21/9501 , G01N21/95607 , G06T7/0004 , G06T2207/30148
摘要： A method of inspecting patterns, including: adjusting a brightness of at least one of a first bright field image and a second bright field image detected from a specimen and directed to similar patterns on differing parts of the specimen, so as to more closely match a brightness; comparing the images which are adjusted in brightness to match with each other to detect dissimilarities indicative of a defect of the pattern, wherein in adjusting the brightness, the brightness between the first bright field image and the second bright field image is adjusted by performing a gradation conversion of at least one of the brightness between the first bright field image and the second bright field image; and wherein in the comparing, said defect of the pattern is detected by using information of a scattered diagram of brightness of the first bright field image and the second bright field image.
摘要翻译：一种检查图案的方法，包括：调整从样本检测到的第一明视野图像和第二亮视场图像中的至少一个的亮度，并指示到样本的不同部分上的相似图案，以便更紧密地匹配亮度; 将亮度调整后的图像进行比较以相互匹配，以检测表示图案缺陷的不相似性，其中在调整亮度时，通过执行渐变来调整第一亮场图像和第二亮视场图像之间的亮度第一亮场图像和第二亮场图像之间的亮度中的至少一个的转换; 并且其中在所述比较中，通过使用所述第一亮场图像和所述第二亮视场图像的亮度的散射图的信息来检测所述图案的所述缺陷。

70. 发明申请

US20090208090A1 METHOD AND APPARATUS FOR INSPECTING DEFECT OF PATTERN FORMED ON SEMICONDUCTOR DEVICE 有权
标题翻译：用于检查形成在半导体器件上的图案的缺陷的方法和装置
公开(公告)号：US20090208090A1
公开(公告)日：2009-08-20
申请号：US12350260
申请日：2009-01-08
申请人： Tomofumi NISHIURA , Atsushi Miyamoto , Chie Shishido , Takumichi Sutani
发明人： Tomofumi NISHIURA , Atsushi Miyamoto , Chie Shishido , Takumichi Sutani
IPC分类号： G06K9/00
CPC分类号： G06T7/001 , G06K9/6255 , G06T2207/10056 , G06T2207/30148 , H01L22/12 , H01L2924/0002 , H01L2924/00
摘要： In the inspection apparatus for a defect of a semiconductor and the method using it for automatically detecting the defect on a semiconductor wafer and presuming the defect occurrence factor using the circuit design data, a plurality of shapes are formed from the circuit design data by deforming the design data with respect to shape deformation items stipulated for respective defect occurrence factor for comparison with the inspection object circuit pattern. The defect is detected by comparison of the group of shapes formed and the actual pattern. Further, the occurrence factors of these defects are presumed, and the defects are classified according to respective factor.
摘要翻译：在半导体缺陷检查装置及其自动检测半导体晶片上的缺陷的方法中，使用电路设计数据设定缺陷发生因子，通过使电路设计数据变形来形成多个形状相对于与检查对象电路图案进行比较的各个缺陷发生因子规定的形状变形项目的设计数据。通过比较形成的形状组和实际图案来检测缺陷。此外，推测出这些缺陷的发生因素，根据各自的因素对缺陷进行分类。

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