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    • 65. 发明申请
    • DRIVER CIRCUIT FOR POWERING A DC LAMP IN A NON-DC LAMP FITTING
    • 用于为非直流灯配件提供DC灯的驱动电路
    • US20120306403A1
    • 2012-12-06
    • US13150435
    • 2011-06-01
    • Shu Hung Henry ChungNan Chen
    • Shu Hung Henry ChungNan Chen
    • H05B37/02
    • H05B33/0818Y02B20/346Y02B20/383
    • The invention comprises a driver circuit for adapting an LED lamp or an LED lamp array to be used in a lamp fitting for a non-LED type lamp without modification of the lamp fitting. The driver circuit is such that the LED lamp or LED lamp array can be inserted into the lamp fitting as a replacement for a non-LED lamp such that the combined unit of the LED lamp and the driver circuit are retained in the lamp fitting and make electrical connections with the lamp fitting's electrical contacts for powering the inserted lamp. The driver circuit enables the LED lamp of lamp array to operate with any of an ac power supply, an electromagnetic ballast or an electronic ballast. The driver circuit comprises a first stage comprising a filter circuit and having an input connectable to any of an ac power supply, an electromagnetic ballast or an electronic ballast of the lamp fitting, a second stage comprising a high frequency switched network and having an input connected to an output of the first stage, and a third stage comprising an ac/dc converter and having an input connected to an output of the second stage and an output connectable to an LED lamp. The third stage is configured to deliver dc power to a connected LED lamp. The second stage is configured to operate in a low frequency mode when said driver circuit is connected to an ac power supply or an electromagnetic ballast of the lamp fitting and configured to operate in a high frequency mode when said driver circuit is connected to an electronic ballast of the lamp fitting.
    • 本发明包括一种驱动电路,用于在不修改灯具的情况下,适配于用于非LED型灯的灯具中使用的LED灯或LED灯阵列。 驱动电路使得LED灯或LED灯阵列可以插入灯具中作为非LED灯的替代物,使得LED灯和驱动电路的组合单元保持在灯具中并使 与灯具的电气触点的电气连接,用于为插入的灯供电。 驱动器电路使得灯阵列的LED灯能够与任何交流电源,电磁镇流器或电子镇流器一起工作。 驱动器电路包括第一级,该第一级包括滤波电路,并且具有可连接到交流电源,电灯镇流器或灯具的电子镇流器中的任一者的输入端,第二级包括高频开关网络并具有输入连接 到第一级的输出,以及包括ac / dc转换器并且具有连接到第二级的输出的输入和可连接到LED灯的输出的第三级。 第三级配置为向连接的LED灯提供直流电。 当所述驱动器电路连接到灯具的交流电源或电磁镇流器并被配置为在所述驱动器电路连接到电子镇流器时以高频模式工作时,第二级被配置为以低频模式工作 的灯具。
    • 69. 发明授权
    • Method of manufacture of single phase ceramic superconductors
    • 单相陶瓷超导体的制造方法
    • US5401712A
    • 1995-03-28
    • US947324
    • 1992-09-18
    • Jitrenda P. SinghRoger B. PoeppelKenneth C. GorettaNan Chen
    • Jitrenda P. SinghRoger B. PoeppelKenneth C. GorettaNan Chen
    • H01L39/24H01B12/00H01L39/12
    • H01L39/2464Y10S505/742Y10S505/782
    • A ceramic superconductor is produced by close control of oxygen partial pressure during sintering of the material. The resulting microstructure of YBa.sub.2 Cu.sub.3 O.sub.x indicates that sintering kinetics are enhanced at reduced p(O.sub.2) and that because of second phase precipitates, grain growth is prevented. The density of specimens sintered at 910.degree. C. increased from 79 to 94% theoretical when p(O.sub.2) was decreased from 0.1 to 0.0001 MPa. The increase in density with decrease in p(O.sub.2) derives from enhanced sintering kinetics, due to increased defect concentration and decreased activation energy of the rate-controlling species undergoing diffusion. Sintering at 910.degree. C resulted in a fine-grain microstructure, with an average grain size of about 4 .mu.m. Post sintering annealing in a region of stability for the desired phase converts the second phases and limits grain growth. The method of pinning grain boundaries by small scale decompositive products and then annealing to convert its product to the desired phase can be used for other complex asides. Such a microstructure results in reduced microcracking, strengths as high as 230 MPa and high critical current density capacity.
    • 陶瓷超导体是通过在材料烧结过程中紧密控制氧分压而产生的。 所得到的YBa2Cu3Ox微观结构表明烧结动力学在降低的p(O 2)下得到提高,而由于第二相析出,可以防止晶粒生长。 当p(O2)从0.1降低到0.0001 MPa时,在910℃下烧结的样品的密度从理论上从79增加到94%。 由于增加的缺陷浓度和速率控制物质经历扩散的活化能降低,p(O 2)的密度增加来自增强的烧结动力学。 在910℃烧结得到细晶粒微观结构,平均粒径约4μm。 在所需相的稳定区域中的后烧结退火转变第二相并限制晶粒生长。 通过小规模分解产物固定晶界的方法,然后退火以将其产物转化成所需相,可用于其它复合物。 这种微观结构导致微裂纹减少,强度高达230MPa和高临界电流密度容量。