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61. 发明授权

US6073576A Substrate edge seal and clamp for low-pressure processing equipment 失效
标题翻译：用于低压加工设备的基板边缘密封和夹具
公开(公告)号：US6073576A
公开(公告)日：2000-06-13
申请号：US977822
申请日：1997-11-25
申请人： Mehrdad M. Moslehi , Cecil J. Davis
发明人： Mehrdad M. Moslehi , Cecil J. Davis
IPC分类号： C23C14/50 , C23C16/458 , C23C16/00
CPC分类号： C23C14/50 , C23C16/4585 , Y10S414/136 , Y10S414/14 , Y10S414/141 , Y10T279/35
摘要： A low-pressure processor for processing substrates includes a chuck that engages the substrates' peripheries for purposes of clamping, sealing, and centering the substrates on chuck bodies. For accomplishing all three purposes, a mechanical clamp can be arranged with two sealing regions. One of the sealing regions seals the clamp to a chuck body or an extension of the chuck body, and another of the sealing regions engages a peripheral edge surface of a substrate for sealing the clamp to the substrate. The second sealing region includes an inclined seating surface that engages a front edge of the substrate's peripheral edge surface and divides a clamping force into a first component that presses the substrate against the chuck body and a second component that centers the substrate on the chuck body. The peripheral engagement of the substrate exposes substantially the entire front surface of the substrate to processing and exposes substantially the entire back surface of the substrate to a heat-transfer gas for enhancing thermal transfers between the substrate and the temperature-regulated chuck body.
摘要翻译：用于处理基板的低压处理器包括与基板周边接合的卡盘，用于夹紧，密封和将基板对准在卡盘体上。为了实现所有这三个目的，机械夹具可以布置有两个密封区域。一个密封区域将夹具密封到卡盘主体或卡盘主体的延伸部分，另一个密封区域与基板的周边边缘表面接合，以将夹具密封到基板。第二密封区域包括倾斜的就座表面，其与衬底的周边边缘表面的前边缘接合并且将夹紧力分成第一部件，该第一部件将衬底压靠在卡盘主体上;以及第二部件，其将衬底定位在卡盘主体上。衬底的周边接合基本上暴露了衬底的整个前表面，从而基本上将衬底的整个后表面基本上暴露于传热气体，以增强衬底和温度调节卡盘体之间的热传递。

62. 发明授权

US6039848A Ultra-high vacuum apparatus and method for high productivity physical vapor deposition. 失效
标题翻译：超高真空装置和高生产率物理气相沉积方法。
公开(公告)号：US6039848A
公开(公告)日：2000-03-21
申请号：US958877
申请日：1997-10-27
申请人： Mehrdad M. Moslehi , Cecil J. Davis , Dorian Heimanson
发明人： Mehrdad M. Moslehi , Cecil J. Davis , Dorian Heimanson
IPC分类号： C23C14/35 , C23C14/56 , H01J37/34 , C23C14/34
CPC分类号： H01J37/3408 , C23C14/35 , C23C14/564
摘要： A magnetron sputtering system is provided that uses a backing plate assembly having an insulating spacer ring coupled between and hermetically sealed to the backing plate and an extender ring. The insulating spacer ring can be constructed from a ceramic material, and the extender ring can be constructed from a metal material. The use of this backing plate assembly allows the backing plate assembly to be coupled directly to the chamber walls with a metal-to-metal contact, while the backing plate remains electrically isolated from the chamber walls. This allows the sealing of a vacuum chamber in the magnetron sputtering system using a seal suitable for creating an ultra-high vacuum in the vacuum chamber.
摘要翻译：提供了一种磁控溅射系统，其使用背板组件，该背板组件具有联接在背衬板和延伸环之间并与气垫密封的绝缘间隔环。绝缘间隔环可以由陶瓷材料构成，并且增量环可以由金属材料构成。使用该背板组件允许背板组件通过金属对金属接触直接耦合到室壁，而背板保持与室壁电隔离。这允许使用适于在真空室中产生超高真空的密封来密封磁控溅射系统中的真空室。

63. 发明授权

US5972803A High throughput optical curing process for semiconductor device manufacturing 失效
标题翻译：半导体器件制造的高通量光学固化工艺
公开(公告)号：US5972803A
公开(公告)日：1999-10-26
申请号：US955422
申请日：1997-10-22
申请人： Jing Shing Shu , Ming-Jang Hwang , Mehrdad M. Moslehi , Cecil J. Davis
发明人： Jing Shing Shu , Ming-Jang Hwang , Mehrdad M. Moslehi , Cecil J. Davis
IPC分类号： B29C35/02 , B29L31/34 , H01L21/3105 , H01L21/314 , H01L21/768 , H01L23/522 , H01L21/469 , H01L21/02
CPC分类号： H01L21/76828 , H01L21/31058
摘要： This is a curing method of low-k dielectric material in a semiconductor device and system for such. The method may comprise: depositing metal interconnection lines; depositing the low-k dielectric material layer over the lines; and curing the low-k dielectric material layer with a heating lamp for less than 10 minutes, wherein the heating lamp provides optical radiation energy in the infrared spectral range of about 1 micron to 3.5 microns in wavelength. The heating lamp may be a tungsten-halogen lamp.
摘要翻译：这是半导体器件中的低k电介质材料的固化方法及其制造方法。该方法可以包括：沉积金属互连线; 在线路上沉积低k电介质材料层; 以及用加热灯固化低k电介质材料层少于10分钟，其中加热灯在波长为约1微米至3.5微米的红外光谱范围内提供光辐射能量。加热灯可以是卤钨灯。

64. 发明授权

US5876573A High magnetic flux cathode apparatus and method for high productivity physical-vapor deposition 失效
标题翻译：高磁通阴极装置和高生产率物理气相沉积方法
公开(公告)号：US5876573A
公开(公告)日：1999-03-02
申请号：US677951
申请日：1996-07-10
申请人： Mehrdad M. Moslehi , Dorian Heimanson , Cecil J. Davis , Thomas R. Omstead
发明人： Mehrdad M. Moslehi , Dorian Heimanson , Cecil J. Davis , Thomas R. Omstead
IPC分类号： C23C14/34 , C23C14/35 , H01J37/34
CPC分类号： H01J37/3435 , C23C14/3407 , C23C14/35 , H01J37/3408 , H01J37/3497
摘要： A magnetron sputtering system is provided that uses cooling channels in the magnetron assembly to cool the target. The magnetron sputtering system also generates low pressure region in the magnetron assembly such that the backing plate sees a pressure differential much lower than atmospheric pressure. The backing plate is reduced in thickness and provides less of a barrier to the generated magnetic field.
摘要翻译：提供磁控溅射系统，其使用磁控管组件中的冷却通道来冷却靶。磁控溅射系统还在磁控管组件中产生低压区域，使得背板看到的压差远低于大气压。背板的厚度减小，并且对产生的磁场提供较少的屏障。

65. 发明授权

US5139288A Coupling device for providing electrical and thermal insulation under high pressure, cryogenic conditions 失效
标题翻译：用于在高压，低温条件下提供电气和绝热的耦合装置
公开(公告)号：US5139288A
公开(公告)日：1992-08-18
申请号：US575459
申请日：1990-08-30
申请人： Habib Najm , Cecil J. Davis , Gregory E. Gardner
发明人： Habib Najm , Cecil J. Davis , Gregory E. Gardner
IPC分类号： F16L25/02 , F16L59/14 , F16L59/18 , F17C13/00
CPC分类号： F16L59/184 , F16L25/026 , F16L59/141 , F17C13/00 , Y10S285/911
摘要： A coupling device (10) provides sealing members (24), (26), preferably Indium wire O-rings (72), (74), suitable for sealing engagement with an insulating member (28) under cryogenic, high-pressure conditions. Coupling device (10) is designed to couple a first metal pipe attached to a first adapter (12), and a second metal pipe attached to a second adapter (14), so that fluid may be conveyed via bore (36), chamber (84), and bore (48) under such cryogenic high-pressure conditions. According to the invention, the coupling device (10) provides effective sealing under these extreme conditions while also providing thermal and electrical insulation due to the advantageous construction featuring insulating member (28), first collar member (20) and second collar member (22). Thus, two metal pipes may be joined together, one in a high-voltage, low temperature state, the other in an electrically grounded condition, each pipe being maintained substantially in its respective condition by virtue of the insulating properties of coupling device (10).
摘要翻译：耦合装置（10）提供适于在低温，高压条件下与绝缘构件（28）密封接合的密封构件（24），（26），优选铟线O形环（72），（74）。耦合装置（10）被设计成将附接到第一适配器（12）的第一金属管和附接到第二适配器（14）的第二金属管耦合，使得流体可以经由孔（36），室（ 84）和孔（48）在这样的低温高压条件下。根据本发明，耦合装置（10）在这些极端条件下提供有效的密封，同时由于具有绝缘构件（28），第一环构件（20）和第二环构件（22）的有利结构，还提供热和电绝缘，。因此，两个金属管可以连接在一起，一个处于高电压，低温状态，另一个处于电接地状态，由于耦合装置（10）的绝缘性能，每个管基本维持在其各自的状态，。

66. 发明授权

US5044871A Integrated circuit processing system 失效
标题翻译：集成电路处理系统
公开(公告)号：US5044871A
公开(公告)日：1991-09-03
申请号：US143918
申请日：1988-01-13
申请人： Cecil J. Davis , Robert Matthews , Robert A. Bowling
发明人： Cecil J. Davis , Robert Matthews , Robert A. Bowling
IPC分类号： B65G49/07 , H01L21/00 , H01L21/677 , H01L21/687
CPC分类号： H01L21/67748 , H01L21/67201 , H01L21/67757 , H01L21/67772 , Y10S414/139 , Y10S414/14
摘要： A vacuum-tight wafer carrier, and a load lock suitable for use with this wafer carrier. The wafers are supported at each side by a slightly sloping shelf, so that minimal contact (line contact) is made between the wafer surface and the surface of the shelf. This reduces generation of particulates by abrasion of the surface of the wafer. The carrier also contains elastic elements to restrain the wafers from rattling around, which further reduces the internal generation of particulates. When the wafer carrier is placed into the load lock, its body is lowered from beneath its cover through an aperture into a lower chamber, where wafers are loaded and unloaded under vacuum; the carrier cover remains covering the aperture into the lower chamber, so that the wafers never see any surface which is directly exposed to atmosphere. A wafer transport arm mechanism permits interchange of wafers among one or more processing stations and one or more load locks of this type.
摘要翻译：真空密封晶片载体和适合与该晶片载体一起使用的负载锁。晶片在每一侧由稍微倾斜的搁架支撑，从而在晶片表面和搁板表面之间进行最小的接触（线接触）。这通过晶片表面的磨损来减少颗粒的产生。载体还包含弹性元件以限制晶片的晃动，这进一步减少了微粒的内部产生。当晶片载体被放置在负载锁中时，其主体通过一个孔从其下方的下部腔室下降到下部腔室，其中晶片在真空下被装载和卸载; 载体盖保持覆盖孔进入下室，使得晶片从未看到直接暴露于大气的任何表面。晶片传送臂机构允许在一个或多个处理站和一个或多个这种类型的装载锁之间交换晶片。

67. 发明授权

US4877757A Method of sequential cleaning and passivating a GaAs substrate using remote oxygen plasma 失效
标题翻译：使用远程氧等离子体顺序清洗和钝化GaAs衬底的方法
公开(公告)号：US4877757A
公开(公告)日：1989-10-31
申请号：US282927
申请日：1988-12-07
申请人： Rudy L. York , Joseph D. Luttmer , Patricia B. Smith , Cecil J. Davis
发明人： Rudy L. York , Joseph D. Luttmer , Patricia B. Smith , Cecil J. Davis
IPC分类号： H01L21/00 , H01L21/465 , H01L21/471
CPC分类号： H01L21/67028 , H01L21/465 , H01L21/471 , Y10S148/017 , Y10S148/021 , Y10S148/056
摘要： A processing apparatus and method for depositing a passivating layer on a mercury-cadmium-telluride wafer utilizing a single process chamber to provide oxygen gas to the chamber with the excitation energy being provided by a remotely generated plasma in order to remove any organic residue and then supplying either a sulfide or selenide gas in combination with illuminating the wafer with an in situ generated ultraviolet energy to produce a passivating layer.
摘要翻译：一种用于在汞镉碲化物晶片上沉积钝化层的处理装置和方法，其利用单个处理室向室提供氧气，其中激发能由远程产生的等离子体提供，以便除去任何有机残余物，然后提供硫化物或硒化物气体与原位产生的紫外线能量照射晶片以产生钝化层。

68. 发明授权

US4837113A Method for depositing compound from group II-VI 失效
标题翻译：从II-VI组沉积化合物的方法
公开(公告)号：US4837113A
公开(公告)日：1989-06-06
申请号：US203562
申请日：1988-05-25
申请人： Joseph D. Luttmer , Rudy L. York , Patricia B. Smith , Cecil J. Davis
发明人： Joseph D. Luttmer , Rudy L. York , Patricia B. Smith , Cecil J. Davis
IPC分类号： C23C16/30 , H01L21/00
CPC分类号： H01L21/67017 , C23C16/306 , Y10S438/935
摘要： A II-VI compound, such as zinc sulfide, is deposited from a gaseous mixture in a reactor which is compatible with a vacuum processing system which includes vacuum wafer transport. Two manifolds are used, each connected to a supply of one or more reagent gases, to improve uniformity.
摘要翻译：将II-VI化合物如硫化锌从气态混合物沉积在与包括真空晶片输送的真空处理系统相容的反应器中。使用两个歧管，每个歧管连接到一个或多个试剂气体的供应以改善均匀性。

69. 发明授权

US06475359B1 Thin-film processing electromagnet with modified core for producing low-skew magnetic orientation 有权
标题翻译：具有改性芯的薄膜加工电磁铁，用于产生低偏磁磁取向
公开(公告)号：US06475359B1
公开(公告)日：2002-11-05
申请号：US09595932
申请日：2000-06-16
申请人： Mehrdad M. Moslehi , Shiyuan Cheng , Xiangqun Chen , Cecil J. Davis
发明人： Mehrdad M. Moslehi , Shiyuan Cheng , Xiangqun Chen , Cecil J. Davis
IPC分类号： C14C1435
CPC分类号： C23C14/3414 , C23C14/351 , C23C16/08 , C23C16/10 , C23C16/16 , C23C16/18 , H01F7/20
摘要： An electromagnet having one or more coils wrapped around a plate-shaped core produces a uniaxial magnetic field in the vicinity of a substrate surface for orienting a magnetic film deposited onto the substrate surface. Variations in the magnetic mass of the plate-shaped core or in the magnetic permeability of the core mass are made to reduce angular skew and to improve uniformity of the uniaxial magnetic field. The variations generally involve a reduction in magnetic mass or permeability near a center of the core with respect to a periphery of the core. Cavities of various sizes and shapes but having symmetry with a magnetic axis can be formed in the core for this purpose.
摘要翻译：具有缠绕在板状芯上的一个或多个线圈的电磁体在基板表面附近产生单轴磁场，用于使沉积在基板表面上的磁性膜定向。制成板状芯的磁性质量或芯体的磁导率的变化，以减小角偏移并提高单轴磁场的均匀性。这些变化通常涉及相对于芯的周边在芯的中心附近减小磁性质量或磁导率。为此，可以在芯中形成各种尺寸和形状但具有与磁轴对称的腔体。

70. 发明授权

US5435379A Method and apparatus for low-temperature semiconductor processing 失效
标题翻译：低温半导体加工方法和装置
公开(公告)号：US5435379A
公开(公告)日：1995-07-25
申请号：US930074
申请日：1992-08-14
申请人： Mehrdad M. Moslehi , Habib N. Najm , Ajit P. Paranjpe , Cecil J. Davis
发明人： Mehrdad M. Moslehi , Habib N. Najm , Ajit P. Paranjpe , Cecil J. Davis
IPC分类号： H01L21/302 , F04B23/02 , F04B49/24 , H01J37/34 , H01L21/00 , H01L21/3065 , H01L21/683 , F28D15/00
CPC分类号： H01L21/67103 , F04B23/028 , F04B49/24 , H01J37/34 , H01J2237/2001 , H01J2237/32
摘要： A chilling system (12) has a container (20) filled with a coolant (22). A pipe (16) traverses within the container (20) and the coolant (22) to a housing (18). Fluid flows within the pipe (16) and becomes chilled through the pipe (16) upon entering the container (20) and the coolant (22). The chilled fluid enters the housing (18) chilling the housing (18) through the pipe (16). In turn, semiconductor substrate (19) in contact with the housing (18) also is chilled.
摘要翻译：冷却系统（12）具有填充有冷却剂（22）的容器（20）。管道（16）在容器（20）和冷却剂（22）内移动到壳体（18）。流体在管道（16）内流动，并且在进入容器（20）和冷却剂（22）时通过管道（16）变冷。冷冻流体通过管道（16）进入冷却壳体（18）的壳体（18）。反过来，与壳体（18）接触的半导体衬底（19）也被冷却。

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