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61. 发明申请

US20050003565A1 Radiation emitting semiconductor device 有权
标题翻译：辐射发射半导体器件
公开(公告)号：US20050003565A1
公开(公告)日：2005-01-06
申请号：US10837828
申请日：2004-05-03
申请人： Dominik Eisert , Volker Haerle , Frank Kuehn , Manfred Mundbrod-Vangerow , Uwe Strauss , Ulrich Zehnder
发明人： Dominik Eisert , Volker Haerle , Frank Kuehn , Manfred Mundbrod-Vangerow , Uwe Strauss , Ulrich Zehnder
IPC分类号： H01L33/00 , H01L33/20 , H01L33/22 , H01L33/38 , H01L33/40 , H01L21/00
CPC分类号： H01L33/20 , H01L33/0079 , H01L33/22 , H01L33/38 , H01L33/405 , H01L33/60 , H01L2224/32245 , H01L2224/32257 , H01L2224/48091 , H01L2224/48247 , H01L2224/48465 , H01L2224/73265 , H01L2924/10155 , H01L2924/00014 , H01L2924/00
摘要： Radiation-emitting semiconductor device, method for fabricating same and radiation-emitting optical device. A radiation-emitting semiconductor device with a multilayer structure (100) comprising a radiation-emitting active layer (10), with electrical contacts (30, 40) for impressing a current in the multilayer structure (100) and with a radiotransparent window layer (20). The window layer is arranged exclusively on the side of the multilayer structure (100) facing away from a main direction of radiation of the semiconductor device and has at least one side wall that includes a first side wall portion (20a) which extends obliquely, concavely or in a stepwise manner toward a central axis of the semiconductor device lying perpendicular to the multilayer sequence. In its subsequent extension toward the back side, viewed from the multilayer structure, the side wall changes over into a second side wall portion (20b) that extends perpendicularly to the multilayer structure, that is, parallel to the central axis, and the portion of the window layer (20) encompassing the second side wall portion (20b) forms a mounting pedestal for the semiconductor device. The first and second side wall portions are fabricated especially preferably by means of a saw blade having a shaped edge. In a preferred optical device, the semiconductor device is mounted window layer downward in a reflector cup.
摘要翻译：辐射发射半导体器件，其制造方法和发射光学器件。一种具有多层结构（100）的辐射发射半导体器件（100），包括辐射发射有源层（10），具有用于在多层结构（100）中施加电流的电触点（30,40）以及无线电透过窗口层 20）。窗层仅排列在背离半导体器件的主辐射方向的多层结构（100）的侧面上，并具有至少一个侧壁，该侧壁包括第一侧壁部分（20a），该第一侧壁部分倾斜地，或者以逐步的方式朝向垂直于多层序列的半导体器件的中心轴线。在从多层结构观察的随后的向后延伸的过程中，侧壁转变成垂直于多层结构延伸的第二侧壁部分（20b），即平行于中心轴线的部分包围第二侧壁部分（20b）的窗口层（20）形成用于半导体器件的安装基座。第一和第二侧壁部分特别优选地通过具有成形边缘的锯片来制造。在优选的光学器件中，半导体器件将窗口层向下安装在反射杯中。

62. 发明授权

US09178332B2 Housing for an optoelectronic semiconductor component and method for producing such a housing 有权
标题翻译：光电半导体部件用壳体及其制造方法
公开(公告)号：US09178332B2
公开(公告)日：2015-11-03
申请号：US13825290
申请日：2011-09-13
申请人： Uwe Strauss , Markus Arzberger
发明人： Uwe Strauss , Markus Arzberger
IPC分类号： H01L23/495 , H01S5/024 , H01L33/62 , H01S5/022
CPC分类号： H01S5/02244 , H01L23/495 , H01L33/62 , H01L2224/48091 , H01L2224/48465 , H01S5/02208 , H01S5/02216 , H01S5/02268 , H01S5/02276 , H01S5/02288 , H01S5/02296 , H01S5/024 , H01S5/02476 , H05K5/0091 , H01L2924/00014 , H01L2924/00
摘要： A housing for an optoelectronic semiconductor component includes a housing body having a mounting plane and a leadframe with a first connection conductor and a second connection conductor. The housing body deforms the leadframe in some regions. The leadframe has a main extension plane which extends obliquely or perpendicularly with respect to the mounting plane. A semiconductor component having such a housing and a semiconductor chip and a method for producing a housing are also disclosed.
摘要翻译：一种用于光电子半导体部件的壳体包括具有安装平面的壳体和具有第一连接导体和第二连接导体的引线框架。壳体在一些区域使引线框变形。引线框具有相对于安装平面倾斜或垂直延伸的主延伸平面。还公开了一种具有这种外壳和半导体芯片的半导体元件及其制造方法。

63. 发明授权

US08976829B2 Edge-emitting semiconductor laser 有权
标题翻译：边缘发射半导体激光器
公开(公告)号：US08976829B2
公开(公告)日：2015-03-10
申请号：US13695249
申请日：2011-05-09
申请人： Harald Koenig , Uwe Strauss , Wolfgang Reill
发明人： Harald Koenig , Uwe Strauss , Wolfgang Reill
IPC分类号： H01S5/30 , H01L33/00 , H01S5/042 , H01S5/40 , H01S5/02 , H01S5/028 , H01S5/0625 , H01S5/16 , H01S5/20 , H01S5/22
CPC分类号： H01S5/30 , H01L33/005 , H01L2924/0002 , H01S5/0201 , H01S5/0283 , H01S5/0425 , H01S5/0625 , H01S5/16 , H01S5/2036 , H01S5/22 , H01S5/4031 , H01L2924/00
摘要： An edge-emitting semiconductor laser is specified. A semiconductor body includes an active zone suitable for producing electromagnetic radiation. At least two facets on the active zone form a resonator. At least two contact points are spaced apart from one another in a lateral direction by at least one intermediate region and are mounted on an outer face of the semiconductor body.
摘要翻译：指定边缘发射半导体激光器。半导体本体包括适于产生电磁辐射的活性区域。有源区域上的至少两个面形成谐振器。至少两个接触点在横向方向上彼此间隔开至少一个中间区域，并且安装在半导体本体的外表面上。

64. 发明授权

US08711893B2 Optoelectronic component and method for producing an optoelectronic component 有权
标题翻译：光电子元件的制造方法
公开(公告)号：US08711893B2
公开(公告)日：2014-04-29
申请号：US12920312
申请日：2009-01-28
申请人： Adrian Stefan Avramescu , Christoph Eichler , Uwe Strauss , Volker Haerle
发明人： Adrian Stefan Avramescu , Christoph Eichler , Uwe Strauss , Volker Haerle
IPC分类号： H01S5/00
CPC分类号： H01L33/0075 , H01L21/02389 , H01L21/02458 , H01L21/02505 , H01L21/0254 , H01L33/0079 , H01L33/10 , H01L2924/0002 , H01S5/0217 , H01S5/0424 , H01S5/12 , H01S5/18308 , H01S5/22 , H01S5/32341 , H01L2924/00
摘要： An optoelectronic component contains an epitaxial layer sequence based on a nitride compound semiconductor having an active layer and an epitaxial growth substrate comprising Al1-xGaxN, where 0
摘要翻译：光电子部件包含基于具有活性层的氮化物化合物半导体和包含Al1-xGaxN的外延生长衬底的外延层序列，其中0

65. 发明授权

US08581280B2 Optoelectronic semiconductor chip 有权
标题翻译：光电半导体芯片
公开(公告)号：US08581280B2
公开(公告)日：2013-11-12
申请号：US12223382
申请日：2006-12-20
申请人： Michael Fehrer , Uwe Strauss
发明人： Michael Fehrer , Uwe Strauss
IPC分类号： H01L33/00
CPC分类号： H01L33/20 , H01L33/32 , H01L33/405 , H01L33/42 , H01L2924/0002 , H01L2924/00
摘要： An optoelectronic semiconductor chip (1) having a semiconductor layer sequence (2), which comprises an active region (3) suitable for generating radiation and has a lateral main extension direction. The semiconductor layer sequence is arranged by a substrate (4) having a side surface (17), the side surface has a side surface region (18) that is beveled with respect to the main extension direction, and/or a cutout (21), and the semiconductor chip has a radiation-transmissive and electrically conductive contact layer (5).
摘要翻译：一种具有半导体层序列（2）的光电子半导体芯片（1），其包括适于产生辐射并具有横向主延伸方向的有源区域（3）。半导体层序列由具有侧面（17）的基板（4）配置，侧面具有相对于主延伸方向倾斜的侧面区域（18）和/或切口（21），，并且半导体芯片具有辐射透射和导电的接触层（5）。

66. 发明授权

US08565278B2 Semiconductor component and method for producing a semiconductor component 有权
标题翻译：半导体元件的制造方法及半导体元件的制造方法
公开(公告)号：US08565278B2
公开(公告)日：2013-10-22
申请号：US12863673
申请日：2009-03-09
申请人： Christoph Eichler , Uwe Strauss
发明人： Christoph Eichler , Uwe Strauss
IPC分类号： H01S5/00
CPC分类号： H01L22/10 , H01L22/12 , H01S5/22 , H01S2301/173
摘要： A semiconductor component includes a semiconductor body with a semiconductor layer sequence having an active region, provided for generating coherent radiation, and an indicator layer. With respect to an interface which delimits the semiconductor body in regions in a vertical direction, on that side of said interface which is remote from the active region, the semiconductor body has a web-like region extending in a vertical direction between the interface and a surface of the semiconductor body. The indicator layer has a material composition that differs from that of the material of the web-like region which adjoins the indicator layer. A distance between the indicator layer and the surface is at most of the same magnitude as a distance between the interface and the surface.
摘要翻译：半导体部件包括具有半导体层序列的半导体本体，其具有用于产生相干辐射的有源区域和指示层。关于在垂直方向的区域中限定半导体本体的界面，在远离有源区的所述界面的该侧，半导体本体具有在界面和a之间沿垂直方向延伸的网状区域半导体体的表面。指示剂层具有与邻接指示剂层的网状区域的材料组成不同的材料组成。指示剂层和表面之间的距离与界面和表面之间的距离最大相同的大小。

67. 发明授权

US08502264B2 Composite substrate, and method for the production of a composite substrate 有权
标题翻译：复合基板，以及复合基板的制造方法
公开(公告)号：US08502264B2
公开(公告)日：2013-08-06
申请号：US12298723
申请日：2007-04-20
申请人： Volker Hârle , Uwe Strauss , Georg Brüderl , Christoph Eichler , Adrian Avramescu
发明人： Volker Hârle , Uwe Strauss , Georg Brüderl , Christoph Eichler , Adrian Avramescu
IPC分类号： H01L33/02
CPC分类号： H01L31/184 , H01L21/76254 , H01L31/1852 , H01L33/007 , H01L33/0075 , H01L33/0079 , Y02E10/544
摘要： A composite substrate (1) comprising a substrate body (2) and a utility layer (31) fixed on the substrate body (2). A planarization layer (4) is arranged between the utility layer (31) and the substrate body (2). A method for producing a composite substrate (1) applies a planarization layer (4) on a provided utility substrate (3). The utility substrate (3) is fixed on a substrate body (2) for the composite substrate (1). The utility substrate (3) is subsequently separated, wherein a utility layer (31) of the utility substrate (3) remains for the composite substrate (1) on the substrate body (2).
摘要翻译：一种复合基板（1），其包括固定在所述基板主体（2）上的基板主体（2）和有效层（31）。在实用层（31）和基板主体（2）之间布置有平坦化层（4）。复合基板（1）的制造方法在设置的实用基板（3）上涂敷平坦化层（4）。该实用基板（3）固定在复合基板（1）的基板主体（2）上。随后分离实用基板（3），其中保留用于基板主体（2）上的复合基板（1）的效用基板（3）的有用层（31）。

68. 发明申请

US20120250715A1 Optoelectronic Semiconductor Component 审中-公开
标题翻译：光电半导体元件
公开(公告)号：US20120250715A1
公开(公告)日：2012-10-04
申请号：US13257515
申请日：2010-01-20
申请人： Martin Müller , Uwe Strauss
发明人： Martin Müller , Uwe Strauss
IPC分类号： H01S5/20
CPC分类号： H01S5/4031 , H01S3/094096 , H01S3/0941 , H01S5/0425 , H01S5/1053 , H01S5/3095 , H01S5/4043 , H01S5/405 , H01S5/4087 , H01S5/423
摘要： In at least one embodiment of the optoelectronic semiconductor component (1), the latter comprises an epitaxially grown semiconductor body (2) with at least one active layer (3). Furthermore, the semiconductor body (2) of the semiconductor component (1) comprises at least one barrier layer (4), the barrier layer (4) directly adjoining the active layer (3). A material composition and/or a layer thickness of the active layer (3) and/or of the barrier layer (4) is varied in a direction of variation or a longitudinal direction (L), perpendicular to a direction of growth (G) of the semiconductor body (2). By varying the material composition and/or the layer thickness of the active layer (3) and/or of the barrier layer (4), an emission wavelength (λ) of a radiation (R) generated in the active layer (3) is likewise adjusted in the direction of variation or in the longitudinal direction (L).
摘要翻译：在光电子半导体部件（1）的至少一个实施例中，后者包括具有至少一个有源层（3）的外延生长的半导体本体（2）。此外，半导体部件（1）的半导体本体（2）包括至少一个阻挡层（4），阻挡层（4）直接邻接有源层（3）。活性层（3）和/或阻挡层（4）的材料组成和/或层厚度在垂直于生长方向（G）的变化方向或纵向方向（L）上变化，的半导体本体（2）。通过改变有源层（3）和/或阻挡层（4）的材料组成和/或层厚度，在有源层（3）中产生的辐射（R）的发射波长（λ）为同样地在变化的方向或纵向（L）上调整。

69. 发明授权

US08073300B2 Arrangement comprising a fiber-optic waveguide 有权
标题翻译：布置包括光纤波导
公开(公告)号：US08073300B2
公开(公告)日：2011-12-06
申请号：US12306923
申请日：2007-06-15
申请人： Volker Härle , Alfred Lell , Hubert Ott , Norbert Stath , Uwe Strauss
发明人： Volker Härle , Alfred Lell , Hubert Ott , Norbert Stath , Uwe Strauss
IPC分类号： G02B6/02
CPC分类号： G01M11/088 , B60Q1/0011 , B60Q11/005 , F21S8/06 , F21S41/13 , F21S41/141 , F21S41/16 , F21S41/24 , F21S45/46 , F21S45/47 , F21V3/061 , F21V3/062 , F21V3/10 , F21V7/005 , F21V7/045 , F21V7/22 , F21V9/30 , F21Y2103/00 , G01M11/30
摘要： An arrangement comprising a fiber-optic waveguide (10) and a detection device (25), wherein the fiber-optic waveguide (10) comprises a core region (10E) and a cladding region (10C) surrounding the core region (10E), wherein the core region has a higher refractive index than the cladding region, and wherein the detection device (25) can detect damage to the fiber-optic waveguide (10).
摘要翻译：一种包括光纤波导（10）和检测装置（25）的装置，其中光纤波导（10）包括芯区（10E）和围绕芯区（10E）的包层区（10C）其中所述芯区域具有比所述包层区域更高的折射率，并且其中所述检测装置（25）可以检测对所述光纤波导（10）的损坏。

70. 发明申请

US20110243169A1 Edge Emitting Semiconductor Laser Chip 有权
标题翻译：边缘发射半导体激光芯片
公开(公告)号：US20110243169A1
公开(公告)日：2011-10-06
申请号：US13127887
申请日：2009-10-21
申请人： Christian Lauer , Harald König , Wolfgang Reill , Uwe Strauss
发明人： Christian Lauer , Harald König , Wolfgang Reill , Uwe Strauss
IPC分类号： H01S5/42
CPC分类号： H01S5/0425 , H01S5/02284 , H01S5/0655 , H01S5/10 , H01S5/1017 , H01S5/1053 , H01S5/1064 , H01S5/1228 , H01S5/1234 , H01S5/1237 , H01S5/2036 , H01S5/2205 , H01S5/4012 , H01S5/4031 , H01S2301/166 , H01S2301/18
摘要： An edge emitting semiconductor laser chip includes a semiconductor body, which comprises at least one active zone in which electromagnetic radiation is generated during the operation of the semiconductor laser chip. At least one contact strip is arranged on a top surface at a top side of the semiconductor body. At least two delimiting structures are for delimiting the current spreading between the contact strip and the active zone. The delimiting structures are arranged on both sides of the contact strip.
摘要翻译：边缘发射半导体激光器芯片包括半导体本体，其包括在半导体激光器芯片的操作期间产生电磁辐射的至少一个有效区域。至少一个接触条布置在半导体本体的顶侧的顶表面上。至少两个限定结构用于限定接触片和活动区之间的电流扩展。分隔结构布置在接触片的两侧。

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