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1. 发明授权

US09537070B2 Optoelectronic component with a wireless contacting 有权
标题翻译：光电组件与无线接触
公开(公告)号：US09537070B2
公开(公告)日：2017-01-03
申请号：US11664304
申请日：2005-09-13
申请人： Ewald Karl Michael Guenther , Jörg Erich Sorg , Norbert Stath
发明人： Ewald Karl Michael Guenther , Jörg Erich Sorg , Norbert Stath
IPC分类号： H01L27/15 , H01L33/62 , H01L23/00 , H01L33/52 , H01L33/54 , H01L33/50
CPC分类号： H01L33/62 , H01L24/24 , H01L24/82 , H01L33/508 , H01L33/52 , H01L33/54 , H01L2224/24051 , H01L2224/24105 , H01L2224/24226 , H01L2224/24998 , H01L2224/82007 , H01L2224/82039 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01023 , H01L2924/01033 , H01L2924/01049 , H01L2924/01051 , H01L2924/01058 , H01L2924/01082 , H01L2924/014 , H01L2924/12036 , H01L2924/12041 , H01L2924/12042 , H01L2924/351 , H01L2924/00
摘要： An optoelectronic component contains a semiconductor chip (1) and a carrier body (10), which are provided with a transparent, electrically insulating encapsulation layer (3), the encapsulation layer (3) having two cutouts (11, 12) for uncovering a contact area (6) and a connection region (8) of the carrier body, and an electrically conductive layer (14) being led from the contact area (6) over a partial region of the encapsulation layer (3) to the electrical connection region (8) of the carrier body (10) in order to electrically connect the contact area (6) and the electrical connection region (8) to one another. The radiation emitted in a main radiation direction (13) by the semiconductor chip (1) is coupled out through the encapsulation layer (3), which advantageously contains luminescence conversion substances for the wavelength conversion of the emitted radiation.
摘要翻译：光电子部件包含半导体芯片（1）和载体主体（10），其具有透明的电绝缘封装层（3），所述封装层（3）具有两个切口（11,12），用于露出接触区域（6）和所述载体主体的连接区域（8），以及导电层（14），其从所述接触区域（6）在所述封装层（3）的部分区域上引导到所述电连接区域（10）的所述电连接区域（8）之间，以将所述接触区域（6）和所述电连接区域（8）彼此电连接。通过半导体芯片（1）在主辐射方向（13）上发射的辐射通过封装层（3）耦合出来，该封装层有利地包含发射辐射的波长转换的发光转换物质。

2. 发明申请

US20120223360A1 Optoelectronic Component and Method for Producing an Opto-Electronic Component 有权
标题翻译：光电子元件及其制造方法
公开(公告)号：US20120223360A1
公开(公告)日：2012-09-06
申请号：US13505283
申请日：2010-10-05
申请人： Bernd Barchmann , Axel Kal Tenbacher , Norbert Stath , Walter Wegleiter , Karl Weidner , Ralph Wirth
发明人： Bernd Barchmann , Axel Kal Tenbacher , Norbert Stath , Walter Wegleiter , Karl Weidner , Ralph Wirth
IPC分类号： H01L33/48
CPC分类号： H01L33/62 , H01L24/24 , H01L24/82 , H01L25/0753 , H01L2224/24998 , H01L2224/76155 , H01L2224/82102 , H01L2924/01006 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/12036 , H01L2924/12042 , H01L2924/00
摘要： An opto-electronic component has a carrier element (3) with a connection region (5). Arranged on the carrier element (3) is a semiconductor chip (7). A contact region (10) is mounted on the surface (8) of the semiconductor chip (7) remote from the carrier element (3). The connection region (5) is electrically conductively connected to the contact region (10) by way of an unsupported conductive structure (13). A method for manufacturing an opto-electronic component is described.
摘要翻译：光电子部件具有带有连接区域（5）的载体元件（3）。在载体元件（3）上排列的是半导体芯片（7）。接触区域（10）安装在远离载体元件（3）的半导体芯片（7）的表面（8）上。连接区域（5）通过未支撑的导电结构（13）导电地连接到接触区域（10）。描述了一种用于制造光电子部件的方法。

3. 发明授权

US08256947B2 Light-emitting device 有权
标题翻译：发光装置
公开(公告)号：US08256947B2
公开(公告)日：2012-09-04
申请号：US12306919
申请日：2007-05-31
申请人： Volker Harle , Alfred Lell , Hubert Ott , Norbert Stath , Uwe Strauss
发明人： Volker Harle , Alfred Lell , Hubert Ott , Norbert Stath , Uwe Strauss
IPC分类号： F21V4/00
CPC分类号： G02B6/0003 , F21S41/13 , F21S41/135 , F21S41/14 , F21S41/141 , F21S41/16 , F21S41/24 , F21S45/46 , G01M11/062 , G01M11/088 , G01M11/31 , G01M11/33 , G02B6/4469 , G02B6/447
摘要： A light-emitting device, comprising: a radiation source (5), which emits radiation having a first wavelength, an optical waveguide (10), into which the radiation emitted by the radiation source is coupled, and a converter material (15), which converts the radiation transported through the optical waveguide (10) into light (20) having a second, longer wavelength. A light-emitting device of this type can have an improved light conversion efficiency.
摘要翻译：一种发光装置，包括：辐射源（5），其发射具有第一波长的辐射;辐射源发射的辐射被耦合到其中的光波导（10）;以及转换器材料（15），其将通过光波导（10）传输的辐射转换成具有第二较长波长的光（20）。这种类型的发光装置可以具有改进的光转换效率。

4. 发明申请

US20100301355A1 Optoelectronic Component and Production Method for an Optoelectronic Component 有权
标题翻译：光电子元件的光电元件和生产方法
公开(公告)号：US20100301355A1
公开(公告)日：2010-12-02
申请号：US12808953
申请日：2008-12-11
申请人： Walter Wegleiter , Norbert Stath , Bert Braune , Karl Weidner , Matthias Rebhan , Hans Wulkesch
发明人： Walter Wegleiter , Norbert Stath , Bert Braune , Karl Weidner , Matthias Rebhan , Hans Wulkesch
IPC分类号： H01L33/58 , H01L21/30
CPC分类号： H01L51/52 , H01L24/24 , H01L25/0753 , H01L33/44 , H01L33/46 , H01L33/60 , H01L51/5253 , H01L51/5284 , H01L2224/73267 , H01L2924/01029 , H01L2924/12041 , H01L2924/12044 , H01L2924/00
摘要： An optoelectronic component includes a carrier element. At least two elements are arranged in an adjacent fashion on a first side of the carrier element. Each element has at least one optically active region for generating the electromagnetic radiation. The optoelectronic component has an electrically insulating protective layer arranged at least in part on a surface of the at least two adjacent elements which lies opposite the first side. The protective layer, at least in a first region arranged between the at least two adjacent elements, at least predominantly prevents a transmission of the electromagnetic radiation generated by the optically active regions.
摘要翻译：光电子部件包括载体元件。至少两个元件以相邻方式布置在载体元件的第一侧上。每个元件具有用于产生电磁辐射的至少一个光学活性区域。光电子部件具有至少部分地布置在与第一侧相对的至少两个相邻元件的表面上的电绝缘保护层。至少在布置在所述至少两个相邻元件之间的第一区域中的保护层至少主要地防止由光学活性区域产生的电磁辐射的透射。

5. 发明授权

US07026657B2 High radiance led chip and a method for producing same 有权
标题翻译：高辐射led芯片及其制造方法
公开(公告)号：US07026657B2
公开(公告)日：2006-04-11
申请号：US10258154
申请日：2001-04-19
申请人： Georg Bogner , Siegmar Kugler , Ernst Nirschl , Raimund Oberschmid , Karl-Heinz Schlereth , Olaf Schoenfeld , Norbert Stath , Gerald Neumann
发明人： Georg Bogner , Siegmar Kugler , Ernst Nirschl , Raimund Oberschmid , Karl-Heinz Schlereth , Olaf Schoenfeld , Norbert Stath , Gerald Neumann
IPC分类号： H01L21/00 , H01L33/00
CPC分类号： H01L33/20 , H01L33/02 , H01L33/08 , H01L33/145 , H01L33/44 , H01L2224/16225
摘要： The invention concerns a light-emitting diode chip (1) comprising a radiation-emitting active region (32) and a window layer (2). To increase the luminous efficiency, the cross-sectional area of the radiation-emitting active region (32) is smaller than the cross-sectional area of the window layer (2) available for the decoupling of light.The invention is further directed to a method for fabricating a lens structure on the surface of a light-emitting component.
摘要翻译：本发明涉及一种包括发射辐射有源区（32）和窗口层（2）的发光二极管芯片（1）。为了提高发光效率，发射有源区域（32）的横截面面积小于可用于解耦光的窗口层（2）的横截面面积。本发明还涉及一种用于在发光部件的表面上制造透镜结构的方法。

6. 发明授权

US5990499A Integrated semiconductor circuit 有权
标题翻译：集成半导体电路
公开(公告)号：US5990499A
公开(公告)日：1999-11-23
申请号：US163599
申请日：1998-09-28
申请人： Werner Kuhlmann , Norbert Stath , Hans-Ludwig Althaus , Werner Spath
发明人： Werner Kuhlmann , Norbert Stath , Hans-Ludwig Althaus , Werner Spath
IPC分类号： H01L33/64 , H01S5/00 , H01S5/026 , H01L33/00
CPC分类号： H01L33/641 , H01L25/167 , H01L2224/48464
摘要： An integrated semiconductor circuit has a component formed of a semiconductor substrate with an active pn junction formed between a first semiconductor region of a first conductivity type and a second semiconductor region of a second conductivity type. The semiconductor circuit also has a protective circuit that is associated with the component and serves to dissipate overvoltages and/or electrostatic charges. The protective circuit has a protective pn junction formed in a semiconductor mount with a first semiconductor mount region of the first conductivity type and a second semiconductor mount region of the second conductivity type. The second semiconductor mount region of the second conductivity type is electrically coupled to the first semiconductor region formed in the semiconductor substrate of the first conductivity type.
摘要翻译：集成半导体电路具有由在第一导电类型的第一半导体区域和第二导电类型的第二半导体区域之间形成的具有活性pn结的半导体衬底形成的部件。半导体电路还具有与部件相关联的保护电路，并用于消除过电压和/或静电电荷。保护电路具有形成在具有第一导电类型的第一半导体安装区域和第二导电类型的第二半导体安装区域的半导体安装件中的保护性pn结。第二导电类型的第二半导体安装区域电耦合到形成在第一导电类型的半导体衬底中的第一半导体区域。

7. 发明授权

US09196800B2 Light-radiating semiconductor component with a luminescence conversion element 有权
公开(公告)号：US09196800B2
公开(公告)日：2015-11-24
申请号：US12610560
申请日：2009-11-02
申请人： Ulrike Reeh , Klaus Höhn , Norbert Stath , Günter Waitl , Peter Schlotter , Jürgen Schneider , Ralf Schmidt
发明人： Ulrike Reeh , Klaus Höhn , Norbert Stath , Günter Waitl , Peter Schlotter , Jürgen Schneider , Ralf Schmidt
IPC分类号： H01L33/00 , H01L33/50 , C09K11/77 , H01L33/48 , H01L33/56
CPC分类号： H01L33/50 , C09K11/7718 , C09K11/7721 , C09K11/7746 , C09K11/7749 , C09K11/7767 , C09K11/7769 , C09K11/7774 , H01L33/486 , H01L33/501 , H01L33/502 , H01L33/56 , H01L2224/32245 , H01L2224/32257 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2224/48465 , H01L2224/48472 , H01L2224/49107 , H01L2224/73265 , H01L2224/8592 , H01L2924/01021 , H01L2924/01079 , H01L2924/12041 , H01L2924/12044 , H01L2924/181 , H01L2933/0091 , Y02B20/181 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： The light-radiating semiconductor component has a radiation-emitting semiconductor body and a luminescence conversion element. The semiconductor body emits radiation in the ultraviolet, blue and/or green spectral region and the luminescence conversion element converts a portion of the radiation into radiation of a longer wavelength. This makes it possible to produce light-emitting diodes which radiate polychromatic light, in particular white light, with only a single light-emitting semiconductor body. A particularly preferred luminescence conversion dye is YAG:Ce.

8. 发明申请

US20120322178A1 Method of Producing a Radiation-Emitting Optoelectronic Component 有权
标题翻译：产生辐射发光光电子元件的方法
公开(公告)号：US20120322178A1
公开(公告)日：2012-12-20
申请号：US13596842
申请日：2012-08-28
申请人： Ewald Karl Michael Guenther , Jörg Erich Sorg , Norbert Stath
发明人： Ewald Karl Michael Guenther , Jörg Erich Sorg , Norbert Stath
IPC分类号： H01L33/52
CPC分类号： H01L33/62 , H01L24/24 , H01L24/82 , H01L33/508 , H01L33/52 , H01L33/54 , H01L2224/24051 , H01L2224/24105 , H01L2224/24226 , H01L2224/24998 , H01L2224/82007 , H01L2224/82039 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01023 , H01L2924/01033 , H01L2924/01049 , H01L2924/01051 , H01L2924/01058 , H01L2924/01082 , H01L2924/014 , H01L2924/12036 , H01L2924/12041 , H01L2924/12042 , H01L2924/351 , H01L2924/00
摘要： In a method for producing a radiation-emitting optoelectronic component, a semiconductor chip is mounted by a first main area onto a carrier body and is electrically conductively connected at a first contact area to a first connection region, and a transparent electrically insulating encapsulation layer is applied to the chip and the carrier body. A first cutout in the encapsulation layer for at least partly uncovering a second contact area of the chip is produced, and a second cutout in the encapsulation layer for at least partly uncovering a second connection region of the carrier body is produced. Finally, an electrically conductive layer, which electrically conductively connects the second contact area of the semiconductor chip and the second connection region of the carrier body, is applied.
摘要翻译：在制造发射光电子部件的方法中，半导体芯片由第一主区域安装到载体主体上，并且在第一接触区域与第一连接区域导电连接，并且透明电绝缘封装层是应用于芯片和载体主体。产生用于至少部分地露出芯片的第二接触区域的封装层中的第一切口，并且产生用于至少部分地露出载体主体的第二连接区域的封装层中的第二切口。最后，施加导电连接半导体芯片的第二接触区域和载体主体的第二连接区域的导电层。

9. 发明授权

US08073300B2 Arrangement comprising a fiber-optic waveguide 有权
标题翻译：布置包括光纤波导
公开(公告)号：US08073300B2
公开(公告)日：2011-12-06
申请号：US12306923
申请日：2007-06-15
申请人： Volker Härle , Alfred Lell , Hubert Ott , Norbert Stath , Uwe Strauss
发明人： Volker Härle , Alfred Lell , Hubert Ott , Norbert Stath , Uwe Strauss
IPC分类号： G02B6/02
CPC分类号： G01M11/088 , B60Q1/0011 , B60Q11/005 , F21S8/06 , F21S41/13 , F21S41/141 , F21S41/16 , F21S41/24 , F21S45/46 , F21S45/47 , F21V3/061 , F21V3/062 , F21V3/10 , F21V7/005 , F21V7/045 , F21V7/22 , F21V9/30 , F21Y2103/00 , G01M11/30
摘要： An arrangement comprising a fiber-optic waveguide (10) and a detection device (25), wherein the fiber-optic waveguide (10) comprises a core region (10E) and a cladding region (10C) surrounding the core region (10E), wherein the core region has a higher refractive index than the cladding region, and wherein the detection device (25) can detect damage to the fiber-optic waveguide (10).
摘要翻译：一种包括光纤波导（10）和检测装置（25）的装置，其中光纤波导（10）包括芯区（10E）和围绕芯区（10E）的包层区（10C）其中所述芯区域具有比所述包层区域更高的折射率，并且其中所述检测装置（25）可以检测对所述光纤波导（10）的损坏。

10. 发明申请

US20100044739A1 Light-Radiating Semiconductor Component with a Luminescence Conversion Element 有权
标题翻译：具有发光转换元件的光辐射半导体元件
公开(公告)号：US20100044739A1
公开(公告)日：2010-02-25
申请号：US12610560
申请日：2009-11-02
申请人： Ulrike Reeh , Klaus Höhn , Norbert Stath , Günter Waitl , Peter Schlotter , Jürgen Schneider , Ralf Schmidt
发明人： Ulrike Reeh , Klaus Höhn , Norbert Stath , Günter Waitl , Peter Schlotter , Jürgen Schneider , Ralf Schmidt
IPC分类号： H01L33/00
CPC分类号： H01L33/50 , C09K11/7718 , C09K11/7721 , C09K11/7746 , C09K11/7749 , C09K11/7767 , C09K11/7769 , C09K11/7774 , H01L33/486 , H01L33/501 , H01L33/502 , H01L33/56 , H01L2224/32245 , H01L2224/32257 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2224/48465 , H01L2224/48472 , H01L2224/49107 , H01L2224/73265 , H01L2224/8592 , H01L2924/01021 , H01L2924/01079 , H01L2924/12041 , H01L2924/12044 , H01L2924/181 , H01L2933/0091 , Y02B20/181 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： The light-radiating semiconductor component has a radiation-emitting semiconductor body and a luminescence conversion element. The semiconductor body emits radiation in the ultraviolet, blue and/or green spectral region and the luminescence conversion element converts a portion of the radiation into radiation of a longer wavelength. This makes it possible to produce light-emitting diodes which radiate polychromatic light, in particular white light, with only a single light-emitting semiconductor body. A particularly preferred luminescence conversion dye is YAG:Ce.
摘要翻译：光辐射半导体部件具有辐射发射半导体本体和发光转换元件。半导体体在紫外线，蓝色和/或绿色光谱区域中发射辐射，并且发光转换元件将辐射的一部分转换成较长波长的辐射。这使得可以仅生产单个发光半导体本体来产生辐射多色光，特别是白光的发光二极管。特别优选的发光转化染料是YAG：Ce。

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