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1. 发明授权

US08737444B2 Edge-emitting semiconductor laser 有权
标题翻译：边缘发射半导体激光器
公开(公告)号：US08737444B2
公开(公告)日：2014-05-27
申请号：US13497036
申请日：2010-09-01
申请人： Alvaro Gomez-Iglesias , Guenther Groenninger , Christian Lauer , Harald Koenig
发明人： Alvaro Gomez-Iglesias , Guenther Groenninger , Christian Lauer , Harald Koenig
IPC分类号： H01S5/00
CPC分类号： H01S5/20 , B82Y20/00 , H01S5/2031 , H01S5/34313 , H01S2301/16 , H01S2301/166
摘要： An edge emitting semiconductor laser comprising an active, radiation-generating zone (1), and an common waveguide (8), which is suitable for guiding the radiation generated in the active zone (1) within the semiconductor laser. The common waveguide (8) comprises a first n-doped layer (4) and a second n-doped layer (5), which is arranged between the first n-doped layer (4) and the active zone (1), wherein the refractive index n2 of the second n-doped layer (5) is greater than the refractive index n1 of the first n-doped layer (4) by a value dn.
摘要翻译：一种边缘发射半导体激光器，包括有源辐射发生区（1）和公共波导（8），其适于引导在半导体激光器内的有源区（1）中产生的辐射。公共波导（8）包括布置在第一n掺杂层（4）和有源区（1）之间的第一n掺杂层（4）和第二n掺杂层（5），其中第二n掺杂层（5）的折射率n2大于第一n掺杂层（4）的折射率n1值dn。

2. 发明申请

US20100284434A1 EDGE EMITTING SEMICONDUCTOR LASER CHIP HAVING AT LEAST ONE CURRENT BARRIER 审中-公开
标题翻译：边缘发射半导体激光芯片，具有至少一个电流障碍物
公开(公告)号：US20100284434A1
公开(公告)日：2010-11-11
申请号：US12810644
申请日：2008-12-15
申请人： Harald Koenig , Christian Lauer , Martin Mueller , Martin Reufer , Bernd Mayer
发明人： Harald Koenig , Christian Lauer , Martin Mueller , Martin Reufer , Bernd Mayer
IPC分类号： H01S5/02 , H01S5/10
CPC分类号： H01S5/0425 , H01S3/08072 , H01S5/024 , H01S5/02461 , H01S5/1014 , H01S5/168 , H01S5/2004 , H01S5/2205 , H01S5/2231 , H01S5/3095 , H01S5/4031 , H01S5/4081 , H01S2301/18
摘要： An edge emitting semiconductor laser chip includes at least one contact strip, wherein the contact strip has a width B, an active zone, in which electromagnetic radiation is generated during the operation of the semiconductor laser chip, and at least two current barriers, arranged on different sides of the contact strip and extending along the contact strip, wherein the largest distance V between at least one of the current barriers and the contact strip is chosen in such a way that the ratio of the largest distance V to the width B is V/B>1.
摘要翻译：边缘发射半导体激光器芯片包括至少一个接触条，其中接触带具有宽度B，活动区域，其中在半导体激光器芯片的操作期间产生电磁辐射，以及至少两个电流屏障，布置在接触片的不同侧面并沿着接触片延伸，其中至少一个电流屏障和接触片之间的最大距离V选择为使得最大距离V与宽度B之比为V / B> 1。

3. 发明授权

US08831061B2 Edge emitting semiconductor laser chip 有权
标题翻译：边缘发射半导体激光芯片
公开(公告)号：US08831061B2
公开(公告)日：2014-09-09
申请号：US13127887
申请日：2009-10-21
申请人： Christian Lauer , Harald König , Wolfgang Reill , Uwe Strauss
发明人： Christian Lauer , Harald König , Wolfgang Reill , Uwe Strauss
IPC分类号： H01S5/42 , H01S5/12 , H01S5/042 , H01S5/40 , H01S5/22 , H01S5/10 , H01S5/022 , H01S5/20 , H01S5/065
CPC分类号： H01S5/0425 , H01S5/02284 , H01S5/0655 , H01S5/10 , H01S5/1017 , H01S5/1053 , H01S5/1064 , H01S5/1228 , H01S5/1234 , H01S5/1237 , H01S5/2036 , H01S5/2205 , H01S5/4012 , H01S5/4031 , H01S2301/166 , H01S2301/18
摘要： An edge emitting semiconductor laser chip includes a semiconductor body, which comprises at least one active zone in which electromagnetic radiation is generated during the operation of the semiconductor laser chip. At least one contact strip is arranged on a top surface at a top side of the semiconductor body. At least two delimiting structures are for delimiting the current spreading between the contact strip and the active zone. The delimiting structures are arranged on both sides of the contact strip.
摘要翻译：边缘发射半导体激光器芯片包括半导体本体，其包括在半导体激光器芯片的操作期间产生电磁辐射的至少一个有效区域。至少一个接触条布置在半导体本体的顶侧的顶表面上。至少两个限定结构用于限定接触片和活动区之间的电流扩展。分隔结构布置在接触片的两侧。

4. 发明申请

US20120263205A1 Edge-Emitting Semiconductor Laser 有权
标题翻译：边缘发射半导体激光器
公开(公告)号：US20120263205A1
公开(公告)日：2012-10-18
申请号：US13497036
申请日：2010-09-01
申请人： Alvaro Gomez-Iglesias , Guenther Groenninger , Christian Lauer , Harald Koenig
发明人： Alvaro Gomez-Iglesias , Guenther Groenninger , Christian Lauer , Harald Koenig
IPC分类号： H01S5/20
CPC分类号： H01S5/20 , B82Y20/00 , H01S5/2031 , H01S5/34313 , H01S2301/16 , H01S2301/166
摘要： An edge emitting semiconductor laser comprising an active, radiation-generating zone (1), and an common waveguide (8), which is suitable for guiding the radiation generated in the active zone (1) within the semiconductor laser. The common waveguide (8) comprises a first n-doped layer (4) and a second n-doped layer (5), which is arranged between the first n-doped layer (4) and the active zone (1), wherein the refractive index n2 of the second n-doped layer (5) is greater than the refractive index n1 of the first n-doped layer (4) by a value dn.
摘要翻译：一种边缘发射半导体激光器，包括有源辐射发生区（1）和公共波导（8），其适于引导在半导体激光器内的有源区（1）中产生的辐射。公共波导（8）包括布置在第一n掺杂层（4）和有源区（1）之间的第一n掺杂层（4）和第二n掺杂层（5），其中第二n掺杂层（5）的折射率n2大于第一n掺杂层（4）的折射率n1值dn。

5. 发明申请

US20110243169A1 Edge Emitting Semiconductor Laser Chip 有权
标题翻译：边缘发射半导体激光芯片
公开(公告)号：US20110243169A1
公开(公告)日：2011-10-06
申请号：US13127887
申请日：2009-10-21
申请人： Christian Lauer , Harald König , Wolfgang Reill , Uwe Strauss
发明人： Christian Lauer , Harald König , Wolfgang Reill , Uwe Strauss
IPC分类号： H01S5/42
CPC分类号： H01S5/0425 , H01S5/02284 , H01S5/0655 , H01S5/10 , H01S5/1017 , H01S5/1053 , H01S5/1064 , H01S5/1228 , H01S5/1234 , H01S5/1237 , H01S5/2036 , H01S5/2205 , H01S5/4012 , H01S5/4031 , H01S2301/166 , H01S2301/18
摘要： An edge emitting semiconductor laser chip includes a semiconductor body, which comprises at least one active zone in which electromagnetic radiation is generated during the operation of the semiconductor laser chip. At least one contact strip is arranged on a top surface at a top side of the semiconductor body. At least two delimiting structures are for delimiting the current spreading between the contact strip and the active zone. The delimiting structures are arranged on both sides of the contact strip.
摘要翻译：边缘发射半导体激光器芯片包括半导体本体，其包括在半导体激光器芯片的操作期间产生电磁辐射的至少一个有效区域。至少一个接触条布置在半导体本体的顶侧的顶表面上。至少两个限定结构用于限定接触片和活动区之间的电流扩展。分隔结构布置在接触片的两侧。

6. 发明申请

US20170204644A1 Combination Door Assembly 审中-公开
公开(公告)号：US20170204644A1
公开(公告)日：2017-07-20
申请号：US14997645
申请日：2016-01-18
申请人： Robert Mc Mullen, JR. , Christian Lauer
发明人： Robert Mc Mullen, JR. , Christian Lauer
IPC分类号： E05D15/58 , E05D15/06 , E05C7/00 , E06B3/92
CPC分类号： E05D15/58 , E05C7/045 , E05C2007/007 , E05D15/0665 , E05D2015/485 , E05D2015/585 , E05F2700/02 , E05Y2201/218 , E05Y2900/132 , E06B3/5072 , E06B3/5081 , E06B3/509 , E06B3/922
摘要： A combination door assembly includes a frame that may be coupled to a wall of a building. A door is hingedly coupled to the frame such that the door is positionable between an open position and a closed position. The door comprises a first half that is slidably coupled to a second half. The second half is positionable in an open position when the door is positioned in the closed position. Thus, the second half is configured to allow egress and entry to the building when the door is in the closed position.

7. 发明授权

US09136671B2 Edge emitting semiconductor laser 有权
标题翻译：边缘发射半导体激光器
公开(公告)号：US09136671B2
公开(公告)日：2015-09-15
申请号：US13503661
申请日：2010-08-25
申请人： Christian Lauer , Alvaro Gomez-Iglesias
发明人： Christian Lauer , Alvaro Gomez-Iglesias
IPC分类号： H01S5/00 , H01S5/10 , H01S5/042 , H01S5/065 , H01S5/20 , H01S5/32 , H01S5/40
CPC分类号： H01S5/0655 , H01S5/02284 , H01S5/0425 , H01S5/10 , H01S5/1082 , H01S5/2004 , H01S5/2018 , H01S5/2036 , H01S5/2081 , H01S5/2086 , H01S5/209 , H01S5/3211 , H01S5/3213 , H01S5/323 , H01S5/4031 , H01S2301/166 , H01S2301/176 , H01S2301/18
摘要： An edge emitting semiconductor laser includes a semiconductor body including a waveguide region, wherein the waveguide region includes a first waveguide layer, a second waveguide layer and an active layer arranged between the first and second waveguide layers and generates laser radiation, the waveguide region is arranged between first and second cladding layers disposed downstream of the waveguide region in a growth direction of the semiconductor body, a phase structure is formed in the semiconductor body and includes at least one cutout extending from a top side of the semiconductor body into the second cladding layer, at least one first intermediate layer including a semiconductor material different from the semiconductor material of the second cladding layer is embedded into the second cladding layer, and the cutout extends from a top side of the semiconductor body at least partly into the first intermediate layer.
摘要翻译：边缘发射半导体激光器包括：包括波导区域的半导体本体，其中波导区域包括第一波导层，第二波导层和布置在第一和第二波导层之间的有源层，并且产生激光辐射，波导区域布置在半导体本体的生长方向上设置在波导区域下游的第一和第二覆层之间，在半导体本体中形成相结构，并且包括从半导体本体的顶侧延伸到第二覆层的至少一个切口包含与第二包层的半导体材料不同的半导体材料的至少一个第一中间层嵌入到第二包层中，并且切口从半导体本体的顶侧至少部分地延伸到第一中间层。

8. 发明授权

US4929829A Method for detecting flooding of a surface 失效
标题翻译：检测表面淹水的方法
公开(公告)号：US4929829A
公开(公告)日：1990-05-29
申请号：US389443
申请日：1989-08-04
申请人： Hubert Dedden , Eckhard Gieger , Christian Lauer
发明人： Hubert Dedden , Eckhard Gieger , Christian Lauer
IPC分类号： G01N21/47 , B01D29/075 , B01D29/25 , B01D29/37 , B01D29/60 , B01D35/22 , G01F23/28 , G01F23/292
CPC分类号： B01D29/60 , G01F23/292 , G01F23/2928 , B01D2029/075
摘要： In the method for detecting the point of immersion or emergence of a solid or porous body into or out of a liquid, surface waves are generated in the liquid and the light coming from a light source and reflected on the surface of the liquid is scanned photoelectrically. Only the alternating light component of the reflected light is detected here and the rectified alternating light signal is compared with a preset threshold value. When the actual value falls below or exceeds the threshold value, a control signal is then generated which can be utilized for control or regulating actions. For detecting the alternating light component, the photoelectric scanning signal is differentiated. Advantageously, scanning of the surface of the liquid is carried out at a plurality of points. The resulting rectified alternating light components can subsequently be added up, and the total value can be compared with the preset threshold value.
摘要翻译：在用于检测固体或多孔体浸入或流出液体的点的方法中，在液体中产生表面波，并且来自光源并在液体表面上反射的光被光电扫描。在此仅检测反射光的交替光分量，并将整流交替光信号与预设阈值进行比较。当实际值低于或超过阈值时，产生可用于控制或调节动作的控制信号。为了检测交变光分量，光电扫描信号被区分。有利地，在多个点处进行液体表面的扫描。随后将所得到的整流交替光分量相加，并将总值与预设的阈值进行比较。

9. 发明申请

US20120250717A1 EDGE EMITTING SEMICONDUCTOR LASER 有权
标题翻译：边缘发射半导体激光
公开(公告)号：US20120250717A1
公开(公告)日：2012-10-04
申请号：US13503661
申请日：2010-08-25
申请人： Christian Lauer , Alvaro Gomez-Iglesias
发明人： Christian Lauer , Alvaro Gomez-Iglesias
IPC分类号： H01S5/028
CPC分类号： H01S5/0655 , H01S5/02284 , H01S5/0425 , H01S5/10 , H01S5/1082 , H01S5/2004 , H01S5/2018 , H01S5/2036 , H01S5/2081 , H01S5/2086 , H01S5/209 , H01S5/3211 , H01S5/3213 , H01S5/323 , H01S5/4031 , H01S2301/166 , H01S2301/176 , H01S2301/18
摘要： An edge emitting semiconductor laser includes a semiconductor body including a waveguide region, wherein the waveguide region includes a first waveguide layer, a second waveguide layer and an active layer arranged between the first waveguide layer and the second waveguide layer and generates laser radiation, the waveguide region is arranged between a first cladding layer and a second cladding layer disposed downstream of the waveguide region in a growth direction of the semiconductor body, a phase structure for selection of lateral modes of the laser radiation emitted by the active layer is formed in the semiconductor body, wherein the phase structure comprises at least one cutout extending from a top side of the semiconductor body into the second cladding layer, at least one first intermediate layer comprising a semiconductor material different from the semiconductor material of the second cladding layer is embedded into the second cladding layer, and the cutout extends from a top side of the semiconductor body at least partly into the first intermediate layer.
摘要翻译：边缘发射半导体激光器包括：包括波导区域的半导体本体，其中波导区域包括布置在第一波导层和第二波导层之间的第一波导层，第二波导层和有源层，并产生激光辐射，波导区域布置在第一包层和设置在半导体主体的生长方向的波导区域下游的第二包层之间，在半导体中形成用于选择由有源层发射的激光辐射的横向模式的相位结构其中所述相结构包括从所述半导体主体的顶侧延伸到所述第二覆层中的至少一个切口，包括不同于所述第二覆层的半导体材料的半导体材料的至少一个第一中间层嵌入第二包覆层，并且切口从顶部延伸 e至少部分地进入第一中间层。

10. 发明授权

US5521510A Process for monitoring for organic impurities in water 失效
标题翻译：监测水中有机杂质的方法
公开(公告)号：US5521510A
公开(公告)日：1996-05-28
申请号：US319418
申请日：1994-10-06
申请人： Gunter Schunck , Joachim Wasel-Nielen , Christian Lauer , Werner Melzer
发明人： Gunter Schunck , Joachim Wasel-Nielen , Christian Lauer , Werner Melzer
IPC分类号： G01R27/22 , C02F1/42 , G01N27/02 , G01N27/06 , G01N33/18 , G01N27/04
CPC分类号： G01N33/1826 , G01N27/021
摘要： In the process for monitoring water, in particular boiler feed water, for organic impurities by measuring the conductivity, a part stream is diverted from a sample water stream and its conductivity is measured. The other part stream evaporated at 300.degree.-500.degree. C.; the vapor is thermally treated at temperatures of 800.degree.-1000.degree. C.; the treated vapor is condensed and the conductivity of the condensate is measured. Subsequently the difference between the measured conductivities is taken.
摘要翻译：在通过测量导电性来监测水，特别是锅炉给水的有机杂质的过程中，将一部分物流从样品水流中转移并测量其电导率。另一部分物流在300-500℃蒸发; 蒸汽在800°-1000℃的温度下进行热处理。处理后的蒸汽被冷凝，并测量冷凝物的电导率。随后测量电导率之间的差异。

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