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1. 发明授权

US07195942B2 Radiation emitting semiconductor device 有权
标题翻译：辐射发射半导体器件
公开(公告)号：US07195942B2
公开(公告)日：2007-03-27
申请号：US10837828
申请日：2004-05-03
申请人： Dominik Eisert , Volker Haerle , Frank Kuehn , Manfred Mundbrod-Vangerow , Uwe Strauss , Ulrich Zehnder
发明人： Dominik Eisert , Volker Haerle , Frank Kuehn , Manfred Mundbrod-Vangerow , Uwe Strauss , Ulrich Zehnder
IPC分类号： H01L21/50
CPC分类号： H01L33/20 , H01L33/0079 , H01L33/22 , H01L33/38 , H01L33/405 , H01L33/60 , H01L2224/32245 , H01L2224/32257 , H01L2224/48091 , H01L2224/48247 , H01L2224/48465 , H01L2224/73265 , H01L2924/10155 , H01L2924/00014 , H01L2924/00
摘要： Radiation-emitting semiconductor device, method for fabricating same and radiation-emitting optical device.A radiation-emitting semiconductor device with a multilayer structure (100) comprising a radiation-emitting active layer (10), with electrical contacts (30, 40) for impressing a current in the multilayer structure (100) and with a radiotransparent window layer (20). The window layer is arranged exclusively on the side of the multilayer structure (100) facing away from a main direction of radiation of the semiconductor device and has at least one side wall that includes a first side wall portion (20a) which extends obliquely, concavely or in a stepwise manner toward a central axis of the semiconductor device lying perpendicular to the multilayer sequence. In its subsequent extension toward the back side, viewed from the multilayer structure, the side wall changes over into a second side wall portion (20b) that extends perpendicularly to the multilayer structure, that is, parallel to the central axis, and the portion of the window layer (20) encompassing the second side wall portion (20b) forms a mounting pedestal for the semiconductor device. The first and second side wall portions are fabricated especially preferably by means of a saw blade having a shaped edge. In a preferred optical device, the semiconductor device is mounted window layer downward in a reflector cup.
摘要翻译：辐射发射半导体器件，其制造方法和发射光学器件。

2. 发明授权

US06730939B2 Radiation emitting semiconductor device 有权
标题翻译：辐射发射半导体器件
公开(公告)号：US06730939B2
公开(公告)日：2004-05-04
申请号：US09781753
申请日：2001-02-12
申请人： Dominik Eisert , Volker Haerle , Frank Kuehn , Manfred Mundbrod-Vangerow , Uwe Strauss , Ulrich Zehnder
发明人： Dominik Eisert , Volker Haerle , Frank Kuehn , Manfred Mundbrod-Vangerow , Uwe Strauss , Ulrich Zehnder
IPC分类号： H01L3300
CPC分类号： H01L33/20 , H01L33/0079 , H01L33/22 , H01L33/38 , H01L33/405 , H01L33/60 , H01L2224/32245 , H01L2224/32257 , H01L2224/48091 , H01L2224/48247 , H01L2224/48465 , H01L2224/73265 , H01L2924/10155 , H01L2924/00014 , H01L2924/00
摘要： A radiation-emitting semiconductor device with a multilayer structure comprising a radiation-emitting active layer, with electrical contacts for impressing a current in the multilayer structure and with a radiotransparent window layer. The window layer is arranged exclusively on the side of the multilayer structure facing away from a main direction of radiation of the semiconductor device and has at least one side wall that includes a first side wall portion which extends obliquely, concavely or in a stepwise manner toward a central axis of the semiconductor device lying perpendicular to the multilayer sequence. In its subsequent extension toward the back side, viewed from the multilayer structure, the side wall changes over into a second side wall portion that extends perpendicularly to the multilayer structure, that is, parallel to the central axis, and the portion of the window layer encompassing the second side wall portion forms a mounting pedestal for the semiconductor device. The first and second side wall portions are fabricated especially preferably by means of a saw blade having a shaped edge. In a preferred optical device, the semiconductor device is mounted window layer downward in a reflector cup.
摘要翻译：一种具有多层结构的辐射发射半导体器件，包括发射有辐射的有源层，具有用于在多层结构中施加电流的电触点和无线电透过窗口层。窗层仅排列在背离半导体器件的主辐射方向的多层结构的侧面上，并且具有至少一个侧壁，该侧壁包括第一侧壁部分，该第一侧壁部分倾斜地，凹形地或逐步地向着半导体器件的垂直于多层序列的中心轴线。在从多层结构观察的其后向后侧的延伸中，侧壁转变成垂直于多层结构延伸的第二侧壁部分，即平行于中心轴线的部分和窗口层的部分包围第二侧壁部分形成用于半导体器件的安装基座。第一和第二侧壁部分特别优选地通过具有成形边缘的锯片来制造。在优选的光学器件中，半导体器件将窗口层向下安装在反射杯中。

3. 发明授权

US06336264B1 Method and apparatus for loosening and removing connection bolts 有权
标题翻译：松开连接螺栓的方法和装置
公开(公告)号：US06336264B1
公开(公告)日：2002-01-08
申请号：US09503548
申请日：2000-02-14
申请人： Ralf von Borstel , Reinhard Czaja , Frank Kuehn , Claas Hiestermann , Husnu Can , Falco Sengebusch , Mario Meyer , Marc Peters , Meiko Kaninck
发明人： Ralf von Borstel , Reinhard Czaja , Frank Kuehn , Claas Hiestermann , Husnu Can , Falco Sengebusch , Mario Meyer , Marc Peters , Meiko Kaninck
IPC分类号： B23P1904
CPC分类号： B25B31/00 , B25B27/026 , B25B27/04 , Y10T29/53896
摘要： A connection bolt arrangement typically used for connecting two structural members to each other, for example in aircraft construction, includes a conically tapered connection bolt that is force-locked or frictionally engaged in an expansion sleeve so as to cause a radial outward expansion of the sleeve and thereby tightly hold the structural components. An apparatus for releasing such a connection bolt arrangement includes two levers that are pivotably connected to each other, a stamping actuator arranged between respective first ends of the two levers, a pulling extraction device mounted at the second end of the first lever, and a pushing block mounted at the second end of the second lever. The actuating force applied by the actuator is transmitted through the levers and applied to the connection bolt and to the expansion sleeve in opposite directions so as to tend to push the bolt out of the sleeve. The extraction device additionally applies a tension pulling force to the connection bolt relative to the expansion sleeve. The combination of the pressing forces and the tension pulling force releases the connection bolt from the expansion sleeve. The tension pulling force is developed by applying a turning torque to the extraction device.
摘要翻译：通常用于将两个结构构件彼此连接的连接螺栓装置，例如在飞行器结构中，包括锥形连接螺栓，该锥形连接螺栓被力锁定或摩擦地接合在膨胀套筒中，以使套筒径向向外膨胀从而紧紧地保持结构部件。用于释放这种连接螺栓装置的装置包括两个彼此可枢转地连接的杠杆，设置在两个杠杆的相应第一端之间的冲压致动器，安装在第一杆的第二端处的拉拔装置，以及推动块安装在第二杆的第二端。由致动器施加的致动力通过杠杆传递，并以相反方向施加到连接螺栓和膨胀套筒，以便将螺栓推出套筒。提取装置还相对于膨胀套管向连接螺栓施加拉力拉力。按压力和拉力拉动力的组合从膨胀套筒释放连接螺栓。通过对提取装置施加转动力矩来产生拉力拉力。

4. 发明申请

US20050003565A1 Radiation emitting semiconductor device 有权
标题翻译：辐射发射半导体器件
公开(公告)号：US20050003565A1
公开(公告)日：2005-01-06
申请号：US10837828
申请日：2004-05-03
申请人： Dominik Eisert , Volker Haerle , Frank Kuehn , Manfred Mundbrod-Vangerow , Uwe Strauss , Ulrich Zehnder
发明人： Dominik Eisert , Volker Haerle , Frank Kuehn , Manfred Mundbrod-Vangerow , Uwe Strauss , Ulrich Zehnder
IPC分类号： H01L33/00 , H01L33/20 , H01L33/22 , H01L33/38 , H01L33/40 , H01L21/00
CPC分类号： H01L33/20 , H01L33/0079 , H01L33/22 , H01L33/38 , H01L33/405 , H01L33/60 , H01L2224/32245 , H01L2224/32257 , H01L2224/48091 , H01L2224/48247 , H01L2224/48465 , H01L2224/73265 , H01L2924/10155 , H01L2924/00014 , H01L2924/00
摘要： Radiation-emitting semiconductor device, method for fabricating same and radiation-emitting optical device. A radiation-emitting semiconductor device with a multilayer structure (100) comprising a radiation-emitting active layer (10), with electrical contacts (30, 40) for impressing a current in the multilayer structure (100) and with a radiotransparent window layer (20). The window layer is arranged exclusively on the side of the multilayer structure (100) facing away from a main direction of radiation of the semiconductor device and has at least one side wall that includes a first side wall portion (20a) which extends obliquely, concavely or in a stepwise manner toward a central axis of the semiconductor device lying perpendicular to the multilayer sequence. In its subsequent extension toward the back side, viewed from the multilayer structure, the side wall changes over into a second side wall portion (20b) that extends perpendicularly to the multilayer structure, that is, parallel to the central axis, and the portion of the window layer (20) encompassing the second side wall portion (20b) forms a mounting pedestal for the semiconductor device. The first and second side wall portions are fabricated especially preferably by means of a saw blade having a shaped edge. In a preferred optical device, the semiconductor device is mounted window layer downward in a reflector cup.
摘要翻译：辐射发射半导体器件，其制造方法和发射光学器件。一种具有多层结构（100）的辐射发射半导体器件（100），包括辐射发射有源层（10），具有用于在多层结构（100）中施加电流的电触点（30,40）以及无线电透过窗口层 20）。窗层仅排列在背离半导体器件的主辐射方向的多层结构（100）的侧面上，并具有至少一个侧壁，该侧壁包括第一侧壁部分（20a），该第一侧壁部分倾斜地，或者以逐步的方式朝向垂直于多层序列的半导体器件的中心轴线。在从多层结构观察的随后的向后延伸的过程中，侧壁转变成垂直于多层结构延伸的第二侧壁部分（20b），即平行于中心轴线的部分包围第二侧壁部分（20b）的窗口层（20）形成用于半导体器件的安装基座。第一和第二侧壁部分特别优选地通过具有成形边缘的锯片来制造。在优选的光学器件中，半导体器件将窗口层向下安装在反射杯中。

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