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    • 63. 发明授权
    • Ghost cancelling circuit having filter controlled by variable limiter
    • 具有由可变限制器控制的滤波器的抖动消除电路
    • US5138453A
    • 1992-08-11
    • US712673
    • 1991-06-10
    • Satoshi KobayashiJunya SaitoTsutomu KumeTakatomo Nagamine
    • Satoshi KobayashiJunya SaitoTsutomu KumeTakatomo Nagamine
    • H03H15/00H03H17/00H03H17/02H03H21/00H04B3/04H04B3/23H04N5/21
    • H04N5/211
    • A circuit for detecting a wave distortion in a circuit for eliminating a ghost wave component, wherein a received video signal is applied to a transversal filter, a reference signal for cancelling a ghost signal (GCR signal) is taken out from an output signal from the transversal filter, a ghost wave component is picked up from the GCR signal, a signal for controlling a transmission characteristic of the transversal filter is formed on the basis of the picked-up ghost wave component, and the control signal is applied to the transversal filter to thereby extract from the filter a video signal from which the ghost wave component is cancelled. This circuit includes a variable limiter provided on a signal line for transmitting the control signal to the transversal filter and an unit for controlling a limiter level of the variable limiter to be decreased with time.
    • 一种用于检测用于消除重影分量的电路中的波形失真的电路,其中接收到的视频信号被施加到横向滤波器,用于取消重影信号(GCR信号)的参考信号从 横向滤波器,从GCR信号中拾取鬼波分量,基于拾取的重影分量形成用于控制横向滤波器的传输特性的信号,并且控制信号被施加到横向滤波器 从而从滤波器提取从其中消除重影波分量的视频信号。 该电路包括设置在用于将控制信号发送到横向滤波器的信号线上的可变限制器,以及用于控制随时间减小的可变限幅器限幅器电平的单元。
    • 69. 发明授权
    • Semiconductor device
    • 半导体器件
    • US08916866B2
    • 2014-12-23
    • US13279868
    • 2011-10-24
    • Hiromichi GodoSatoshi Kobayashi
    • Hiromichi GodoSatoshi Kobayashi
    • H01L29/786H01L21/00
    • H01L29/7869H01L29/78648
    • A semiconductor device includes a first gate electrode; a gate insulating layer covering the first gate electrode; an oxide semiconductor layer that overlaps with the first gate electrode; oxide semiconductor layers having high carrier density covering end portions of the oxide semiconductor layer; a source electrode and a drain electrode in contact with the oxide semiconductor layers having high carrier density; an insulating layer covering the source electrode, the drain electrode, and the oxide semiconductor layer; and a second gate electrode that is in contact with the insulating layer. Each of the oxide semiconductor layers is in contact with part of each of an upper surface, a lower surface, and a side surface of one of the end portions of the oxide semiconductor layer and part of an upper surface of the gate insulating layer.
    • 半导体器件包括第一栅电极; 覆盖所述第一栅电极的栅极绝缘层; 与所述第一栅电极重叠的氧化物半导体层; 具有覆盖氧化物半导体层的端部的高载流子密度的氧化物半导体层; 与具有高载流子密度的氧化物半导体层接触的源电极和漏电极; 覆盖源电极,漏电极和氧化物半导体层的绝缘层; 以及与绝缘层接触的第二栅电极。 每个氧化物半导体层与氧化物半导体层的一个端部和栅极绝缘层的上表面的一部分的上表面,下表面和侧表面的一部分接触。
    • 70. 发明授权
    • Laser beam machining apparatus with detection laser beam oscillator
    • 激光束加工设备带检测激光束振荡器
    • US08847108B2
    • 2014-09-30
    • US12430522
    • 2009-04-27
    • Satoshi KobayashiKeiji Nomaru
    • Satoshi KobayashiKeiji Nomaru
    • B23K26/00B23K26/067B23K26/04B23K26/40B28D5/04
    • B23K26/046B23K26/40B23K26/53B23K2103/50B28D5/04
    • A laser beam machining apparatus includes a height position detecting unit configured to detect the height position of an upper surface of a workpiece to be machined which is held on a chuck table, and a controller configured to control a condensing point position adjusting unit on the basis of a detection signal from the height position detecting unit. The height position detecting unit includes a detection laser beam oscillating unit configured to oscillate a detection laser beam having a wavelength different from the wavelength of the machining laser beam, and a reflected beam analyzing unit which analyzes a reflected beam generated upon reflection of the detection laser beam on the upper surface of the workpiece and which sends an analytical results to the controller. The laser beam machining apparatus further includes a condensing point position displacing unit configured to displace the condensing point position of the detection laser beam and the condensing point position of the machining laser beam.
    • 一种激光束加工装置,包括:高度位置检测单元,被配置为检测保持在卡盘台上的待加工工件的上表面的高度位置;以及控制器,其基于该控制器来控制聚光点位置调整单元 来自高度位置检测单元的检测信号。 高度位置检测单元包括:检测激光束振荡单元,被配置为振荡具有与加工激光束的波长不同的波长的检测激光束;以及反射光束分析单元,其分析在检测激光器反射时产生的反射光束 在工件的上表面上射束,并将分析结果发送给控制器。 激光束加工装置还包括:凝结点位置移动单元,被配置为移动检测激光束的聚光点位置和加工激光束的聚光点位置。