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    • 5. 发明授权
    • Energy ray-curable ink composition
    • 能量射线固化型油墨组合物
    • US08846779B2
    • 2014-09-30
    • US12921957
    • 2009-05-15
    • Katsuyuki KitoMasayuki OyaSatoshi Kobayashi
    • Katsuyuki KitoMasayuki OyaSatoshi Kobayashi
    • C08F2/50C09D11/00C08J3/28C09D11/101C09D11/38
    • C09D11/101C09D11/38Y10S522/909
    • The present invention provides an energy ray-curable ink composition excellent in the continuous discharge property, and excellent in curability and adherability. The present invention relates to an energy ray-curable ink composition which contains a coloring agent, contains only a monofunctional monomer having an acrylic equivalent of 300 or less, and having one ethylenic double bond in one molecule, and a polyfunctional monomer having an acrylic equivalent of 150 or less, and having two or more ethylenic double bonds in one molecule as a polymerizable compound, contains an α-aminoalkylphenone compound and a thioxanthone compound as a photopolymerization initiator, and contains a silicone compound having a polydimethylsiloxane structure as a surface conditioner.
    • 本发明提供了连续放电性优异,固化性和粘接性优异的能量射线固化性油墨组合物。 本发明涉及一种含有着色剂的能量射线固化性油墨组合物,其仅含有丙烯酸当量为300以下,单分子中具有1个烯属双键的单官能单体和具有丙烯酸当量的多官能单体 150以下,在1分子中具有2个以上的烯属双键作为聚合性化合物,含有α-氨基烷基苯酮化合物和噻吨酮化合物作为光聚合引发剂,并含有作为表面调节剂的聚二甲基硅氧烷结构的硅氧烷化合物。
    • 8. 发明授权
    • Machine tool and pallet standby station
    • 机床和托盘备用站
    • US08307522B2
    • 2012-11-13
    • US12439026
    • 2006-09-04
    • Satoshi Kobayashi
    • Satoshi Kobayashi
    • B23Q7/00
    • B23Q3/18B23Q1/0072Y10T29/5196
    • A machine tool and pallet standby station using a crane for changing a pallet between a table or pallet mounting table (27) of the machine tool and the pallet standby station are provided. The table (27) includes a plurality of guide pins (31) having tapered front ends, a plurality of elevatable lift pins (35) having spherical front ends, and a plurality of taper cones (37) having tapered outer peripheral surfaces. On the other hand, the pallet (P) includes at least two brackets (39) attached so as to project in the side directions from the two side surfaces of the pallet, and each bracket is formed with a guide hole (41) into which a guide pin (31) is inserted for rough positioning of the pallet. Further, the bottom of the pallet (P) is formed with a plurality of locate holes (45) having tapered inner peripheral surfaces and engaging with the spherical front ends of the lift pins for precision positioning of the pallet and a plurality of taper holes (47) having shapes complementary with the taper cones (37) and engaging with the taper cones for final positioning of the pallet.
    • 提供了一种使用起重机的机床和托盘备用站,用于在机床的工作台或托盘安装台(27)和托盘备用站之间更换托盘。 工作台(27)包括具有锥形前端的多个导向销(31),具有球形前端的多个可升降提升销(35)和具有锥形外周表面的多个锥形锥体(37)。 另一方面,托盘(P)包括至少两个托架(39),其从托盘的两个侧表面沿侧向突出安装,并且每个托架形成有引导孔(41),托架 插入导销(31)用于托盘的粗略定位。 此外,托盘(P)的底部形成有多个具有锥形内周面的定位孔(45),并与提升销的球形前端接合,用于托盘的精确定位和多个锥孔 47)具有与锥形锥体(37)互补的形状并与锥形锥体接合以最终定位托盘。
    • 9. 发明授权
    • Thin film transistor and display device
    • 薄膜晶体管和显示装置
    • US08120030B2
    • 2012-02-21
    • US12633067
    • 2009-12-08
    • Hiromichi GodoSatoshi KobayashiHidekazu MiyairiToshiyuki IsaShunpei Yamazaki
    • Hiromichi GodoSatoshi KobayashiHidekazu MiyairiToshiyuki IsaShunpei Yamazaki
    • H01L29/04
    • H01L29/78696H01L27/12H01L29/04
    • Off current of a bottom gate thin film transistor in which a semiconductor layer is shielded from light by a gate electrode is reduced. A thin film transistor includes a gate electrode layer; a first semiconductor layer; a second semiconductor layer, provided on and in contact with the first semiconductor layer; a gate insulating layer between and in contact with the gate electrode layer and the first semiconductor layer; impurity semiconductor layers in contact with the second semiconductor layer; and source and drain electrode layers partially in contact with the impurity semiconductor layers and the first and second semiconductor layers. The entire surface of the first semiconductor layer on the gate electrode layer side is covered by the gate electrode layer; and a potential barrier at a portion where the first semiconductor layer is in contact with the source or drain electrode layer is 0.5 eV or more.
    • 其中半导体层被栅极电极遮挡光的底栅薄膜晶体管的截止电流减小。 薄膜晶体管包括栅电极层; 第一半导体层; 第二半导体层,设置在第一半导体层上并与第一半导体层接触; 在栅极电极层和第一半导体层之间并与之接触的栅极绝缘层; 与第二半导体层接触的杂质半导体层; 以及与杂质半导体层和第一和第二半导体层部分接触的源极和漏极电极层。 栅极电极层侧的第一半导体层的整个表面被栅电极层覆盖; 并且在第一半导体层与源极或漏极电极层接触的部分处的势垒为0.5eV以上。