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61. 发明申请

US20080258166A1 Semiconductor Light Emitting Device and Method for Manufacturing the Same 审中-公开
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US20080258166A1
公开(公告)日：2008-10-23
申请号：US11596124
申请日：2005-05-10
申请人： Mitsuhiko Sakai , Shinichi Kohda , Masayuki Sonobe , Ken Nakahara
发明人： Mitsuhiko Sakai , Shinichi Kohda , Masayuki Sonobe , Ken Nakahara
IPC分类号： H01L33/00
CPC分类号： H01L33/40 , H01L33/32
摘要： There is provided a semiconductor light emitting semiconductor device including an n-side electrode which has a structure capable of stably suppressing the contact resistance between the n-side electrode and a nitride semiconductor layer. Further, there is provided a light emitting device and a manufacturing method wherein an ohmic contact between the n-side electrode and the nitride semiconductor layer can be obtained by a simple manufacturing process, and the n-side electrode has an Au layer on a top surface to facilitate wire bonding. Semiconductor layers (2-8) to form a light emitting layer are laminated on a surface of a substrate (1) made of, for example, a sapphire (Al2O3 single crystal) or the like and a p-side electrode (10) is formed on the surface thereof thorough a light transmitting conductive layer (9). An n-side electrode (11) is formed on an exposed surface of an n-type layer (4), exposed by removing a part of the semiconductor layers (4-8) by etching. The n-side electrode includes actually an Al layer (11a) in contact with the n-type layer, a barrier metal layer (11b) and an Au layer (11c).
摘要翻译：提供一种包括具有能够稳定地抑制n侧电极和氮化物半导体层之间的接触电阻的结构的n侧电极的半导体发光半导体器件。此外，提供了一种发光器件及其制造方法，其中通过简单的制造工艺可以获得n侧电极和氮化物半导体层之间的欧姆接触，并且n侧电极在顶部具有Au层表面方便引线接合。形成发光层的半导体层（2〜8）层压在由例如蓝宝石（Al 2 O 3·N 3）构成的基板（1）的表面上 >单晶）等，并且通过透光导电层（9）在其表面上形成p侧电极（10）。在n型层（4）的暴露表面上形成n侧电极（11），通过蚀刻去除一部分半导体层（4-8）而露出。 n侧电极实际上包括与n型层接触的Al层（11a），阻挡金属层（11b）和Au层（11c）。

62. 发明申请

US20080245297A1 Material supply apparatus 审中-公开
标题翻译：材料供应装置
公开(公告)号：US20080245297A1
公开(公告)日：2008-10-09
申请号：US12078322
申请日：2008-03-28
申请人： Ken Nakahara , Hiroyuki Yuji , Kentaro Tamura , Shunsuke Akasaka , Masashi Kawasaki , Akira Ohtomo , Atsushi Tsukazaki
发明人： Ken Nakahara , Hiroyuki Yuji , Kentaro Tamura , Shunsuke Akasaka , Masashi Kawasaki , Akira Ohtomo , Atsushi Tsukazaki
IPC分类号： B05C5/00
CPC分类号： C30B23/066 , C30B35/00
摘要： A container of a material supply apparatus is configured of a crucible and an orifice. The crucible has a cylindrical shape, a rectangular-column shape or the like, and is hollow. Heat sources such as heaters are disposed around the crucible. The orifice including an opening is provided on a side of the crucible in a material element supplying direction. The orifice includes a pipe portion that extends in the material element supplying direction. The opening is formed on a tip of the pipe portion. An opening area of the pipe portion is formed to become gradually narrower towards the material element supplying side, namely in a direction of the opening.
摘要翻译：材料供给装置的容器由坩埚和孔构成。坩埚具有圆柱形状，矩形柱状等，并且是中空的。诸如加热器的热源设置在坩埚周围。包括开口的孔口沿着材料元件供给方向设置在坩埚的一侧。孔口包括在材料元件供给方向上延伸的管部分。开口形成在管部的前端。管部的开口部形成为朝向材料供给侧逐渐变窄，即开口方向。

63. 发明授权

US07417263B2 Transparent electrode 有权
标题翻译：透明电极
公开(公告)号：US07417263B2
公开(公告)日：2008-08-26
申请号：US10748734
申请日：2003-12-30
申请人： Ken Nakahara
发明人： Ken Nakahara
IPC分类号： H01L33/00 , H01L23/29
CPC分类号： H01L33/42
摘要： In order to emit a light from an electrode side, in semiconductor light emitting devices such as LED and the like, and liquid crystal, the electrode is formed of a transparent material so as to transmit a light through the transparent electrode and exit the light. A ZnO, which constitutes a material for the transparent electrode, is subject to erosion by acid and alkali, thus, as the case may cause loss of a reliability of the electrode under the influence of ion-containing moisture. In order to solve such a problem, this invention has as its aim a transparent electrode film provided with stability capable of preventing any degradation under the influence of any ion-containing moisture, while being kept acid-proof and alkali-proof. In order to accomplish the above-mentioned aim, this invention provides a transparent electrode made up of a ZnO as its main material, wherein its surface is covered with a Mg-doped ZnO film.
摘要翻译：为了从电极侧发出光，在诸如LED等的半导体发光器件和液晶中，电极由透明材料形成，以便透过透明电极发出光并离开光。构成透明电极的材料的ZnO被酸碱侵蚀，因此在离子含水分的影响的情况下可能导致电极的可靠性降低。为了解决这个问题，本发明的目的是提供具有稳定性的透明电极膜，其能够在保持耐酸碱性的同时防止在任何含离子的水分的影响下的任何劣化。为了实现上述目的，本发明提供一种由ZnO作为其主要材料的透明电极，其表面被掺杂了Mg的ZnO膜覆盖。

64. 发明授权

US07132691B1 Semiconductor light-emitting device and method for manufacturing the same 有权
标题翻译：半导体发光装置及其制造方法
公开(公告)号：US07132691B1
公开(公告)日：2006-11-07
申请号：US09786338
申请日：1999-09-09
申请人： Tetsuhiro Tanabe , Ken Nakahara
发明人： Tetsuhiro Tanabe , Ken Nakahara
IPC分类号： H01L27/15
CPC分类号： B82Y20/00 , H01L21/0237 , H01L21/0242 , H01L21/02472 , H01L21/02488 , H01L21/02554 , H01L21/02565 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/02631 , H01L33/28 , H01S5/0213 , H01S5/0422 , H01S5/2224 , H01S5/2231 , H01S5/3214 , H01S5/327 , H01S5/34333 , H01S5/347
摘要： It has a structure in which an active layer (5) that emits light by electric current injection is sandwiched between an n-type cladding layer (4) and a p-type cladding layer (6) made of materials having a larger band gap than the active layer (5), wherein the active layer (5) is made, for example, of CdxZn1−xO (0≦x
摘要翻译：具有通过电流注入发光的有源层（5）夹在由n型包层（4）和p型包覆层（6）构成的p型包覆层所述有源层（5），其中所述有源层（5）由例如Cd x 1 x 1-x O（0 <= x <1）制成，。进一步优选的是，包覆层（4），（6）由例如Mg Y 1 Y y O（0≤y< 1）。这使得ZnO材料的带隙变窄，并且可以使用能够被湿蚀刻，易于处理和结晶性优异的氧化物半导体作为半导体发光器件的有源层或包层的材料例如其中有源层夹在包层之间的蓝色发光二极管或蓝色激光二极管，从而可以获得发光特性优异的蓝色半导体发光器件。

65. 发明授权

US07002179B2 ZnO system semiconductor device 失效
标题翻译： ZnO系半导体器件
公开(公告)号：US07002179B2
公开(公告)日：2006-02-21
申请号：US10772077
申请日：2004-02-04
申请人： Ken Nakahara
发明人： Ken Nakahara
IPC分类号： H01L29/15
CPC分类号： C30B23/02 , C30B29/16 , H01L21/0242 , H01L21/02458 , H01L21/02554 , H01L21/02565 , H01L21/02579 , H01L21/02631 , H01L21/02658 , H01L29/2003 , H01L29/22 , H01L29/267 , H01L29/78603 , H01L29/7869 , H01L33/16 , H01L33/285
摘要： In order to provide ZnO system semiconductor devices having a stable p-type ZnO layer, a ZnO thin film is doped with nitrogen atoms having a high concentration. By fabricating the stable p-type ZnO layer, combinations with n-type ZnO layers easy of fabrication, or combinations with different compositions of p-type layers or n-type layers are made possible, thereby it enables to provide various configurations of ZnO system semiconductor devices.A ZnO system semiconductor device according to the present invention is characterized in that in a semiconductor device comprising one or more layers of n-type layer and p-type layers respectively, at least one layer of said p-type layers is (are) formed of the Zn-polar ZnO system semiconductor film doped with nitrogen atoms such that the thin film growth direction of said Zn-polar ZnO system semiconductor film is conformed to the direction of Zn polarity (0001).
摘要翻译：为了提供具有稳定的p型ZnO层的ZnO系半导体器件，ZnO薄膜掺杂有高浓度的氮原子。通过制造稳定的p型ZnO层，可以容易地制造与n型ZnO层的组合，或者与p型层或n型层的组合不同的组合，从而能够提供各种构造的ZnO系半导体器件。

66. 发明申请

US20050247954A1 ZnO based compound semiconductor light emitting device and method for manufacturing the same 失效
标题翻译： ZnO系化合物半导体发光元件及其制造方法
公开(公告)号：US20050247954A1
公开(公告)日：2005-11-10
申请号：US11166254
申请日：2005-06-27
申请人： Shigeru Niki , Paul Fons , Kakuya Iwata , Tetsuhiro Tanabe , Hidemi Takasu , Ken Nakahara
发明人： Shigeru Niki , Paul Fons , Kakuya Iwata , Tetsuhiro Tanabe , Hidemi Takasu , Ken Nakahara
IPC分类号： H01L21/00 , H01L33/00 , H01L33/28 , H01S5/02 , H01S5/323 , H01S5/327
CPC分类号： H01L33/28 , H01L33/0087 , H01S5/021 , H01S5/32308 , H01S5/32341 , H01S5/327
摘要： A light emitting device includes a silicon substrate (1), a silicon nitride film (2) formed on the surface of the silicon substrate (1), at least an n-type layer (3), (4) and a p-type layer (6), (7) which are formed on the silicon nitride film (2) and also which are made of a ZnO based compound semiconductor, and a semiconductor layer lamination (11) in which layers are laminated to form a light emitting layer. Preferably this silicon nitride film (2) is formed by thermal treatment conducted in an atmosphere containing nitrogen such as an ammonium gas. Also, in another embodiment, a light emitting device is formed by growing a ZnO based compound semiconductor layer on a main face of a sapphire substrate, the main face being perpendicular to the C-face thereof. As a result, it is possible to obtain a device using a ZnO based compound with high properties such as an LED very excellent in crystallinity and having a high light emitting efficiency.
摘要翻译：发光器件包括：硅衬底（1），形成在硅衬底（1）的表面上的氮化硅膜（2），至少n型层（3），（4）和p型形成在氮化硅膜（2）上并且由ZnO基化合物半导体制成的层（6），（7）和层叠层以形成发光层的半导体层层叠体。优选地，该氮化硅膜（2）通过在含氮气体的气氛中进行热处理而形成。此外，在另一实施例中，通过在蓝宝石衬底的主面上生长ZnO基化合物半导体层，主面垂直于其C面而形成发光器件。结果，可以获得使用具有高性能的ZnO基化合物的器件，例如非常优异的结晶度并且具有高发光效率的LED。

67. 发明授权

US06569548B2 Transparent conductive film of zinc oxide 有权
公开(公告)号：US06569548B2
公开(公告)日：2003-05-27
申请号：US09920292
申请日：2001-08-02
申请人： Tetsuya Yamamoto , Ken Nakahara
发明人： Tetsuya Yamamoto , Ken Nakahara
IPC分类号： B32B900
CPC分类号： H01L31/02963 , H01L31/022483 , H01L31/1884 , Y02E10/50 , Y10T428/1059 , Y10T428/1064
摘要： An n-type dopant of at least one of elements of Group III such as Ga and the like and a p-type dopant of at least one of elements of Group V such as N and the like are doped to a ZnO crystalline layer as dopants, and the n-type dopant is more than the p-type dopant and doped into the ZnO layer in an impurity concentration of 1×1018 cm−3 or more. Therefore, it is possible to lower the resistivity of the ZnO layer with a degree of the transparency high and to obtain the transparent conductive film of zinc oxide having the electrical resistivity lower than ITO.

68. 发明授权

US06472241B2 Radical cell device and method for manufacturing groups II-VI compound semiconductor device 有权
标题翻译：激光电池器件及其制造方法II-VI族化合物半导体器件
公开(公告)号：US06472241B2
公开(公告)日：2002-10-29
申请号：US09939719
申请日：2001-08-28
申请人： Kakuya Iwata , Paul Fons , Akimasa Yamada , Koji Matsubara , Shigeru Niki , Ken Nakahara
发明人： Kakuya Iwata , Paul Fons , Akimasa Yamada , Koji Matsubara , Shigeru Niki , Ken Nakahara
IPC分类号： H01L2100
CPC分类号： C30B23/06 , H01L33/0087
摘要： The closing plates (61b), (61c) are provided on the both end portions of the cylindrical insulator body (61a), the gas introduction tube for introducing a gaseous substance is inserted into one plate (61b) of the closing plates of the plasma chamber (61) for making the gaseous substance plasmatic within it, and on the other plate (61c), the plasma radiation outlet (61d) is provided. Then, nearby the plasma jet (63) outgoing from the radiation outlet, the electrode (64) for applying a high electric field of an ion trapper is provided so as to be opposed to the grounded electrode (65) interposed the plasma jet between them. This electrode for applying a high electric field is fixed on the grounded metal plate (61e) provided on the other plate (61c) via the insulation porcelain (66) made of MgO or quartz. As a result, a radical cell device which does not blow-off and mix up Al into the layer epitaxially grown is obtained ,and a Groups II-VI compound semiconductor device because undoped Al is not contained in the semiconductor layers.
摘要翻译：封闭板（61b），（61c）设置在圆筒形绝缘体（61a）的两端部，将用于引入气态物质的气体导入管插入等离子体的封闭板的一个板（61b）用于在其内制备气态物质的室（61），在另一个板（61c）上设置有等离子体辐射出口（61d）。然后，在从辐射出口排出的等离子体射流（63）附近，设置用于施加离子捕获器的高电场的电极（64），以与插入其间的等离子体射流的接地电极（65）相对。用于施加高电场的电极经由由MgO或石英制成的绝缘瓷（66）固定在设置在另一板（61c）上的接地金属板（61e）上。结果，可以获得不将Al吹出和外延生长的层的自由基电池器件，由于在半导体层中不含有未掺杂的Al的II-VI族化合物半导体器件。

69. 发明授权

US08795184B2 Wireless plethysmogram sensor unit, a processing unit for plethysmogram and a plethysmogram system 有权
标题翻译：无线体积描记传感器单元，体积描记图处理单元和体积描记图系统
公开(公告)号：US08795184B2
公开(公告)日：2014-08-05
申请号：US13179814
申请日：2011-07-11
申请人： Daisuke Niwa , Koji Terumoto , Kazuhiro Oguchi , Masahide Tanaka , Ken Nakahara
发明人： Daisuke Niwa , Koji Terumoto , Kazuhiro Oguchi , Masahide Tanaka , Ken Nakahara
IPC分类号： A61B5/02 , A61B5/024 , A61B5/1455 , A61B5/16 , A61B5/00
CPC分类号： A61B5/002 , A61B5/0022 , A61B5/02416 , A61B5/14551 , A61B5/164 , A61B5/165 , A61B5/4815 , A61B5/6802 , A61B5/6826 , A61B2503/10 , A61B2503/12 , A61B2503/40 , A61B2505/07
摘要： A wireless plethysmogram sensor unit is capable of obtaining a plethysmogram from a living tissue of a measuring object and of transmitting the plethysmogram to a processing unit outside the wireless plethysmogram sensor unit. The sensor unit includes a light source to emit measuring light into the living tissue and a light receiving element to receive light emerging from the tissue, which is accompanied by pulsation caused by absorption by arteries in the tissue. A memory stores a plethysmogram obtained in accordance with the light received by the light receiving element. A short range wireless communicator transmits the plethysmogram to the processing unit. A power source provides power to other elements in the sensor unit, and a controller controls the elements of the sensor unit.
摘要翻译：无线体积描记传感器单元能够从测量对象的生物体组织获取体积图，并将体积图传送到无线体积描记传感器单元外部的处理单元。传感器单元包括用于将测量光发射到生物体组织中的光源和用于接收从组织出射的光的光接收元件，其伴随着由组织中的动脉的吸收引起的脉动。存储器存储根据由光接收元件接收的光获得的体积图。短距离无线通信器将体积图传送到处理单元。电源为传感器单元中的其他元件提供电力，并且控制器控制传感器单元的元件。

70. 发明授权

US08304795B2 Semiconductor light emitting device with concave-convex pattern and method for manufacturing the same 有权
标题翻译：具有凹凸图案的半导体发光器件及其制造方法
公开(公告)号：US08304795B2
公开(公告)日：2012-11-06
申请号：US12087173
申请日：2006-12-28
申请人： Atsushi Yamaguchi , Ken Nakahara
发明人： Atsushi Yamaguchi , Ken Nakahara
IPC分类号： H01L33/00
CPC分类号： H01L33/42 , H01L33/20 , H01L33/44 , H01L2933/0083
摘要： A semiconductor lamination portion (6) is formed by laminating nitride semiconductor layers including an n-type layer (3) and a p-type layer (5) on one side of a substrate (1) so as to form a light emitting layer, and a light transmitting conductive layer (7) is provided at a surface side of the semiconductor lamination portion. A concave-convex pattern, i.e., concaves (7a), is provided on a surface of the light transmitting conductive layer. A p-side electrode (8) is provided on the light transmitting conductive layer, and an n-side electrode (9) is electrically connected to the n-type layer exposed by etching a part of the semiconductor lamination portion. Light emitted from the light emitting layer is therefore totally reflected repeatedly in the semiconductor lamination portion and the substrate and can be effectively taken out without attenuation, so external quantum efficiency can be improved.
摘要翻译：通过在衬底（1）的一侧层叠包括n型层（3）和p型层（5）的氮化物半导体层以形成发光层，形成半导体层叠部（6）并且在半导体层叠部的表面侧设置有透光性导电层（7）。在透光导电层的表面上设置凹凸图案，即凹部（7a）。 p侧电极（8）设置在透光导电层上，n侧电极（9）与通过蚀刻半导体层叠部分的一部分露出的n型层电连接。因此，从半导体层叠部和基板反射全反射从发光层发出的光，能够有效地取出而不衰减，能够提高外部的量子效率。

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