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61. 发明申请

US20080045915A1 ABSORBENT ARTICLE 有权
标题翻译：吸收品
公开(公告)号：US20080045915A1
公开(公告)日：2008-02-21
申请号：US11766867
申请日：2007-06-22
申请人： Yuki NODA , Kenichiro Kuroda , Kumiko Nishikawa , Satoshi Mizutani , Hideyuki Ishikawa , Akihiro Kimura
发明人： Yuki NODA , Kenichiro Kuroda , Kumiko Nishikawa , Satoshi Mizutani , Hideyuki Ishikawa , Akihiro Kimura
IPC分类号： A61F13/15
CPC分类号： D04H1/70 , A61F13/51108 , D04H1/42 , Y10T428/2457 , Y10T428/24595 , Y10T428/24669
摘要： An absorbent article comprising nonwoven fabric having convex and concave surfaces, and that allows liquid such as excreta and the like to permeate quickly. A sanitary napkin has a plurality of raised ridge portions and groove portions in a top sheet member. The fiber density of the side edge portions of each of the plurality of raised ridge portions in the thickness direction of the nonwoven fabric is substantially uniform, and is higher than the average fiber density in the raised ridge portions. The fiber density of the central portion between both the side edge portions of each of the plurality of raised ridge portions is substantially uniform in the thickness direction of the nonwoven fabric, and is lower than the average fiber density in the raised ridge portions.
摘要翻译：一种吸收性物品，其特征在于，所述吸收性物品包括具有凸表面和凹面的非织造织物，并允许诸如排泄物等的液体迅速渗透。卫生巾在顶片部件中具有多个凸脊部和槽部。无纺布的厚度方向上的多个凸状部的侧缘部的纤维密度基本均匀，高于凸状部的平均纤维密度。多个凸脊部的两个侧缘部之间的中央部的纤维密度在无纺布的厚度方向上基本均匀，并且低于凸状部的平均纤维密度。

62. 发明申请

US20080044622A1 NONWOVEN FABRIC 有权
标题翻译：无纺布
公开(公告)号：US20080044622A1
公开(公告)日：2008-02-21
申请号：US11757218
申请日：2007-06-01
申请人： Yuki NODA , Hideyuki ISHIKAWA , Satoshi MIZUTANI , Akihiro KIMURA
发明人： Yuki NODA , Hideyuki ISHIKAWA , Satoshi MIZUTANI , Akihiro KIMURA
IPC分类号： B32B3/10
CPC分类号： D04H1/76 , D04H1/74 , Y10T428/24273 , Y10T428/24322 , Y10T428/24331 , Y10T428/24479 , Y10T428/2457 , Y10T428/24595 , Y10T428/24603 , Y10T428/24612 , Y10T428/24992 , Y10T442/60
摘要： A nonwoven fabric adjusted so that the fiber densities of convex portions and recessed portions are not excessively high. A plurality of open portions is formed by blowing fluid mainly composed of gas from the top side of a fiber web onto the fiber web supported from the bottom side thereof by a supporting member, and moving fiber constituting the fiber web. The nonwoven fabric is formed with the plurality of open portions continuously formed at predetermined intervals along a predetermined direction and a plurality of joining portions formed between the open portions adjacent thereto in a predetermined direction.
摘要翻译：调整为使凸部和凹部的纤维密度不高的无纺布。多个开放部分是通过将主要由气体组成的流体从纤维网的上侧吹入通过支撑部件从其底侧支撑的纤维网上形成的，以及构成纤维网的移动纤维形成的。该非织造织物形成有沿预定方向以预定间隔连续形成的多个开口部分，以及形成在与其相邻的开放部分之间的多个接合部分沿预定方向。

63. 发明申请

US20080010795A1 NONWOVEN FABRIC, NONWOVEN FABRIC MANUFACTURING METHOD, AND NONWOVEN FABRIC MANUFACTURING APPARATUS 有权
标题翻译：非织造布，非织造织物制造方法和非织造织物制造装置（NONWOVEN FABRIC MANUFACTURING APPARATUS
公开(公告)号：US20080010795A1
公开(公告)日：2008-01-17
申请号：US11764899
申请日：2007-06-19
申请人： Satoshi Mizutani , Yuki Noda , Hideyuki Ishikawa , Akihiro Kimura
发明人： Satoshi Mizutani , Yuki Noda , Hideyuki Ishikawa , Akihiro Kimura
IPC分类号： D04H3/14 , D04H1/46 , D06B1/02 , D04H1/54
CPC分类号： D06C29/00 , D04H1/492 , D04H1/495 , D04H18/04 , D06C23/00 , Y10T442/689 , Y10T442/69
摘要： The present invention provides a nonwoven fabric of which at least one of fiber orientation, fiber density, and basis weight is adjusted, and in which at least one of a predetermined groove portion, an opening, and a protrusion is formed, a manufacturing method for the nonwoven fabric, and a nonwoven fabric manufacturing apparatus. The nonwoven fabric manufacturing apparatus of the present invention manufactures a nonwoven fabric of which at least one of fiber orientation, fiber density, and basis weight is adjusted, or in which at least one of a predetermined groove portion, an opening, and a protrusion is formed by blowing fluid mainly containing gas onto a fiber web which is formed in a sheet shape, and which is in a state where at least a portion of the fibers constituting the fiber aggregate has a degree of freedom.
摘要翻译：本发明提供了一种无纺布，其中纤维取向性，纤维密度和单位面积重量中的至少一种被调节，并且其中形成有预定的凹槽部分，开口和突起中的至少一种的制造方法无纺布，无纺布制造装置。本发明的无纺布制造装置制造了调节纤维取向，纤维密度和单位面积重量中的至少一种的规定的无纺布，或者规定的槽部，开口部和突起部中的至少一个为通过将主要含有气体的流体吹送到形成为片状的纤维网上，并且处于其中构成纤维聚集体的至少一部分纤维具有自由度的状态而形成。

64. 发明申请

US20070298213A1 NONWOVEN FABRIC 有权
标题翻译：无纺布
公开(公告)号：US20070298213A1
公开(公告)日：2007-12-27
申请号：US11755376
申请日：2007-05-30
申请人： Yuki NODA , Hideyuki ISHIKAWA , Satoshi MIZUTANI , Koichiro TANI , Akihiro KIMURA
发明人： Yuki NODA , Hideyuki ISHIKAWA , Satoshi MIZUTANI , Koichiro TANI , Akihiro KIMURA
IPC分类号： B32B3/10
CPC分类号： A61F13/53717 , A61F13/51 , A61F13/512 , A61F13/5146 , A61F13/536 , A61F13/53713 , A61F2013/15016 , A61F2013/15365 , A61F2013/15422 , A61F2013/53778 , A61F2013/53782 , D04H1/495 , Y10T428/24124 , Y10T428/24273 , Y10T428/24322 , Y10T428/24331 , Y10T428/2457 , Y10T428/24595 , Y10T428/24603 , Y10T428/24612 , Y10T428/24942 , Y10T428/2495 , Y10T428/24992 , Y10T442/60 , Y10T442/643 , Y10T442/696
摘要： A nonwoven fabric that is not easily damaged during use is provided. A fiber web supported by a predetermined supporting member from the lower face side is blown with fluid, mainly composed of gas, from the upper face side of the fiber web to move fibers that constitute the fiber web, thereby forming at least a plurality of open areas. The nonwoven fabric includes a plurality of open areas continuously formed along a predetermined direction with a predetermined interval and a plurality of joining portions, each of which are formed between the open areas adjacent to each other in a predetermined direction.
摘要翻译：提供在使用中不容易损坏的无纺布。从下表面侧由预定的支撑构件支撑的纤维网从纤维网的上表面侧吹送主要由气体组成的流体，以移动构成纤维网的纤维，从而形成至少多个开口地区无纺织物包括沿预定间隔连续形成的多个开放区域和多个接合部分，每个接合部分沿预定方向形成在彼此相邻的开放区域之间。

65. 发明申请

US20070146254A1 LIGHT EMITTING DEVICE 有权
标题翻译：发光装置
公开(公告)号：US20070146254A1
公开(公告)日：2007-06-28
申请号：US11612226
申请日：2006-12-18
申请人： Hiromi YANAI , Shuhei NAGATSUKA , Akihiro KIMURA
发明人： Hiromi YANAI , Shuhei NAGATSUKA , Akihiro KIMURA
IPC分类号： G09G3/32
CPC分类号： G09G3/2022 , G09G3/3258 , G09G2300/0842 , G09G2300/0861 , G09G2320/029 , G09G2320/041 , G09G2320/043
摘要： A display device in which characteristic change of an organic light emitting layer due to deterioration or temperature change can be detected to keep the constant luminance of a light emitting element is provided. A monitor region is provided in addition to a pixel portion for display. A plurality of monitor elements is arranged in the monitor region. A switching circuit is provided so as to prevent a large amount of current from flowing in a shorted monitor element among the plurality of monitor elements. As a result, by monitoring potential change between electrodes of the monitor element, the voltage or the current that is supplied to a light emitting element in the pixel portion for display can be corrected in accordance with time degradation or temperature change.
摘要翻译：可以检测出由于劣化或温度变化引起的有机发光层的特性变化以保持发光元件的恒定亮度的显示装置。除了用于显示的像素部分之外还提供监视器区域。多个监视器元件布置在监视器区域中。提供一种开关电路，以防止大量的电流在多个监视元件之间的短路监视元件中流动。结果，通过监视监视元件的电极之间的电位变化，可以根据时间的劣化或温度变化来校正供给到用于显示的像素部中的发光元件的电压或电流。

66. 发明授权

US07226331B2 Electron source manufacturing apparatus and electron source manufacturing method 失效
标题翻译：电子源制造装置和电子源制造方法
公开(公告)号：US07226331B2
公开(公告)日：2007-06-05
申请号：US10957839
申请日：2004-10-05
申请人： Shigeto Kamata , Kazuhiro Oki , Akihiro Kimura , Kazumasa Takatsu
发明人： Shigeto Kamata , Kazuhiro Oki , Akihiro Kimura , Kazumasa Takatsu
IPC分类号： H01J9/00 , H01J9/42
CPC分类号： H01J9/42 , H01J9/027 , H01J2201/3165 , H01J2329/00
摘要： In an electron source manufacturing apparatus, the quantity of heat generated from an electron source substrate is measured. A temperature of a support member for the electron source substrate is controlled based on the measured quantity of heat generated. A variation in performances of electron source substrates is suppressed, which increase their life.
摘要翻译：在电子源制造装置中，测量从电子源基板产生的热量。基于所测量的热量来控制电子源基板的支撑部件的温度。抑制了电子源基板的性能变化，延长了使用寿命。

67. 发明申请

US20050264924A1 Disk device 失效
标题翻译：磁盘设备
公开(公告)号：US20050264924A1
公开(公告)日：2005-12-01
申请号：US11138395
申请日：2005-05-27
申请人： Akihiro Kimura , Kazuhito Shimomura
发明人： Akihiro Kimura , Kazuhito Shimomura
IPC分类号： G11B25/04 , G11B5/012 , G11B5/02 , G11B17/00 , G11B33/00 , G11B33/12 , H05K1/00 , H05K1/11 , H05K3/36
CPC分类号： G11B33/122 , G11B5/012 , G11B25/043 , H05K1/0281 , H05K1/117 , H05K1/118 , H05K3/361 , H05K2201/09781 , H05K2201/09954 , H05K2201/2009
摘要： A control circuit board is opposed to an outer surface of a case in the form of a rectangular box, and an connector cable, which has connector terminals connectable with an external device, extends from the circuit board. The control circuit board has a plurality of first connector pads with a first property and a plurality of second connector pads with a second property different from the first property, the first and second connector pads being arranged side by side on the control circuit board. The connector cable has a proximal end portion connected to at least one type, among the first and second connector pads, and the connector terminals including a plurality of connector terminals connecting with the at least one type of connector pads to which the proximal end portion is connected.
摘要翻译：控制电路板与矩形盒形式的外壳的外表面相对，并且具有可与外部装置连接的连接器端子的连接器电缆从电路板延伸。控制电路板具有多个具有第一特性的第一连接器焊盘和具有与第一特性不同的第二特性的多个第二连接器焊盘，第一和第二连接器焊盘并排布置在控制电路板上。所述连接器电缆具有连接到所述第一和第二连接器焊盘中的至少一种类型的近端部分，并且所述连接器端子包括多个连接器端子，所述连接器端子与所述至少一种类型的连接器焊盘相连，所述连接器端子的近端部分连接的。

68. 发明授权

US06741087B2 Voltage-applying probe, apparatus for manufacturing electron source using the probe, and method for manufacturing electron source using the apparatus 失效
公开(公告)号：US06741087B2
公开(公告)日：2004-05-25
申请号：US10143783
申请日：2002-05-14
申请人： Akihiro Kimura , Kazuhiro Oki , Shigeto Kamata
发明人： Akihiro Kimura , Kazuhiro Oki , Shigeto Kamata
IPC分类号： G01R3102
CPC分类号： H01J9/02 , H01J2201/3165 , H01J2329/00 , Y10T29/49204
摘要： A probe for applying a voltage to lines provided on a substrate comprises (a) a conductive sheet, the conductive sheet including a mesh sheet in which linear members are woven into a mesh and a conductive material which coats the mesh sheet, (b) an elastic member for pressing the conductive sheet against the lines, and (c) a holding member for holding the conductive sheet and the elastic member together. The probe has improved electrical connectivity and durability, and achieves a reduction in size and facilitation of operations of an apparatus for manufacturing an electron source.

69. 发明授权

US06599603B1 Silicon wafer 有权
标题翻译：硅晶片
公开(公告)号：US06599603B1
公开(公告)日：2003-07-29
申请号：US09673955
申请日：2000-10-24
申请人： Masahiro Kato , Masaro Tamatsuka , Osamu Imai , Akihiro Kimura , Tomosuke Yoshida
发明人： Masahiro Kato , Masaro Tamatsuka , Osamu Imai , Akihiro Kimura , Tomosuke Yoshida
IPC分类号： C30B2906
CPC分类号： C30B29/06 , C30B15/00 , H01L21/3225 , Y10T428/21
摘要： The present invention provides a CZ silicon wafer, wherein the wafer includes rod-like void defects and/or plate-like void defects inside thereof, and a CZ silicon wafer, wherein the silicon wafer includes void defects inside the wafer, a maximum value of a ratio between long side length L1 and short side length L2 (L1/L2) in an optional rectangle circumscribed the void defect image projected on an optional {110} plane is 2.5 or more, and the silicon wafer including rod-like void defects and/or plate-like void defects inside the wafer, wherein a void defect density of the silicon wafer at a depth of from the wafer surface to at least 0.5 &mgr;m after the heat treatment is ½ or less than that of inside the wafer. According to this, the silicon wafer, which is suitable for expanding reducing effect of void defects by heat treatment up to a deeper region, can be obtained.
摘要翻译：本发明提供了一种CZ硅晶片，其中晶片在其内部包括棒状空隙缺陷和/或板状空隙缺陷，以及CZ硅晶片，其中硅晶片包括晶片内的空隙，其最大值在可选择的{110}平面上投影的空隙缺陷图像的任意矩形中的长边长L1和短边长L2之间的比率（L1 / L2）为2.5以上，硅晶片包括棒状空隙， /或晶片内的板状空隙缺陷，其中在晶片表面的深度处的硅晶片的空隙缺陷密度在热处理之后至少为0.5微米的半孔缺陷密度为晶片内部的1/2以下。据此，可以获得适合于通过热处理直到更深的区域来减少空隙缺陷的效果的硅晶片。

70. 发明授权

US06548035B1 Silicon single crystal wafer for epitaxial wafer, epitaxial wafer, and methods for producing the same and evaluating the same 有权
标题翻译：用于外延晶片的硅单晶晶片，外延晶片及其制造方法及其评估
公开(公告)号：US06548035B1
公开(公告)日：2003-04-15
申请号：US09868058
申请日：2001-06-14
申请人： Akihiro Kimura , Makoto Iida , Yoshinori Hayamizu , Ken Aihara , Masanori Kimura
发明人： Akihiro Kimura , Makoto Iida , Yoshinori Hayamizu , Ken Aihara , Masanori Kimura
IPC分类号： A01N4340
CPC分类号： C30B29/06 , C30B15/203 , C30B15/206 , H01L21/3225
摘要： A silicon single crystal wafer for epitaxial growth grown by the CZ method, which is doped with nitrogen and has a V-rich region over its entire plane, or doped with nitrogen, has an OSF region in its plane, and shows an LEP density of 20/cm2 or less or an OSF density of 1×104/cm2 or less in the OSF region, epitaxial wafer utilizing the substrate, as well as methods for producing them and method for evaluating a substrate suitable for an epitaxial wafer. There are provided a substrate for an epitaxial wafer that suppresses crystal defects to be generated in an epitaxial layer when epitaxial growth is performed on a CZ silicon single crystal wafer doped with nitrogen and also has superior IG ability, epitaxial wafer utilizing the substrate, as well as methods for producing them and method for evaluating a substrate suitable for an epitaxial wafer.
摘要翻译：通过CZ法生长的用于外延生长的硅单晶晶片，其掺杂有氮并在其整个平面上具有富V区或掺杂氮，在其平面中具有OSF区，并且显示出LEP密度在OSF区域中使用20 / cm 2以下的OSF密度或1×10 4 / cm 2以下的OSF密度，利用该基板的外延晶片及其制造方法以及评价适用于外延晶片的基板的方法。提供了一种用于外延晶片的衬底，其抑制在掺杂氮的CZ硅单晶晶片上进行外延生长时外延层中产生的晶体缺陷，并且还具有优异的IG能力，以及利用衬底的外延晶片作为其制造方法和评价适用于外延晶片的基板的方法。

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