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1. 发明授权

US06548035B1 Silicon single crystal wafer for epitaxial wafer, epitaxial wafer, and methods for producing the same and evaluating the same 有权
标题翻译：用于外延晶片的硅单晶晶片，外延晶片及其制造方法及其评估
公开(公告)号：US06548035B1
公开(公告)日：2003-04-15
申请号：US09868058
申请日：2001-06-14
申请人： Akihiro Kimura , Makoto Iida , Yoshinori Hayamizu , Ken Aihara , Masanori Kimura
发明人： Akihiro Kimura , Makoto Iida , Yoshinori Hayamizu , Ken Aihara , Masanori Kimura
IPC分类号： A01N4340
CPC分类号： C30B29/06 , C30B15/203 , C30B15/206 , H01L21/3225
摘要： A silicon single crystal wafer for epitaxial growth grown by the CZ method, which is doped with nitrogen and has a V-rich region over its entire plane, or doped with nitrogen, has an OSF region in its plane, and shows an LEP density of 20/cm2 or less or an OSF density of 1×104/cm2 or less in the OSF region, epitaxial wafer utilizing the substrate, as well as methods for producing them and method for evaluating a substrate suitable for an epitaxial wafer. There are provided a substrate for an epitaxial wafer that suppresses crystal defects to be generated in an epitaxial layer when epitaxial growth is performed on a CZ silicon single crystal wafer doped with nitrogen and also has superior IG ability, epitaxial wafer utilizing the substrate, as well as methods for producing them and method for evaluating a substrate suitable for an epitaxial wafer.
摘要翻译：通过CZ法生长的用于外延生长的硅单晶晶片，其掺杂有氮并在其整个平面上具有富V区或掺杂氮，在其平面中具有OSF区，并且显示出LEP密度在OSF区域中使用20 / cm 2以下的OSF密度或1×10 4 / cm 2以下的OSF密度，利用该基板的外延晶片及其制造方法以及评价适用于外延晶片的基板的方法。提供了一种用于外延晶片的衬底，其抑制在掺杂氮的CZ硅单晶晶片上进行外延生长时外延层中产生的晶体缺陷，并且还具有优异的IG能力，以及利用衬底的外延晶片作为其制造方法和评价适用于外延晶片的基板的方法。

2. 发明授权

US06544332B1 Method for manufacturing silicon single crystal, silicon single crystal manufactured by the method, and silicon wafer 有权
标题翻译：通过该方法制造硅单晶，硅单晶的方法和硅晶片
公开(公告)号：US06544332B1
公开(公告)日：2003-04-08
申请号：US09830386
申请日：2001-04-26
申请人： Makoto Iida , Masanori Kimura , Hiroshi Takeno , Yoshinori Hayamizu
发明人： Makoto Iida , Masanori Kimura , Hiroshi Takeno , Yoshinori Hayamizu
IPC分类号： C30B1504
CPC分类号： C30B15/206 , C30B29/06
摘要： A method for producing a silicon single crystal in accordance with CZ method, characterized in that before producing the crystal having a predetermined kind and concentration of impurity, another silicon single crystal having the same kind and concentration of impurity as the crystal to be produced is grown to thereby determine an agglomeration temperature zone of grown-in defects thereof, and then based on the temperature, growth condition of the crystal to be produced or temperature distribution within a furnace of a pulling apparatus is set such that a cooling rate of the crystal for passing through the agglomeration temperature zone is a desired rate to thereby produce the silicon single crystal. A silicon single crystal produced in accordance with the above method, characterized in that a density of LSTD before subjecting to heat treatment is 500 number/cm2 or more and the average defect size is 70 nm or less. The present invention provides by CZ method a silicon single crystal and a silicon wafer wherein the dispersion in size and density of grown-in defects is suppressed effectively and the quality is stabilized regardless of the variety of crystals, and a producing method therefor.
摘要翻译：根据CZ方法制造单晶硅的方法，其特征在于，在制造具有预定种类和浓度的杂质的晶体之前，生长具有与待生产的晶体相同种类和杂质浓度的另一硅单晶从而确定其生长缺陷的附聚温度区，然后基于温度，将要生产的晶体的生长条件或拉制装置的炉内的温度分布设定为使得用于通过附聚温度区域是所需的速率，从而产生硅单晶。根据上述方法制备的硅单晶，其特征在于，在热处理之前的LSTD的密度为500个数/ cm 2以上，平均缺陷尺寸为70nm以下。本发明通过CZ法提供了硅单晶和硅晶片，其中无论晶体的种类如何，有效地抑制了生长缺陷的尺寸和密度的分散，并且质量稳定，并且其制造方法。

3. 发明授权

US6027562A Method for producing a silicon single crystal having few crystal defects, and a silicon single crystal and silicon wafers produced by the method 有权
公开(公告)号：US6027562A
公开(公告)日：2000-02-22
申请号：US173931
申请日：1998-10-16
申请人： Makoto Iida , Eiichi Iino , Masanori Kimura , Shozo Muraoka
发明人： Makoto Iida , Eiichi Iino , Masanori Kimura , Shozo Muraoka
IPC分类号： C30B15/20 , C30B15/00 , C30B15/14 , C30B29/06
CPC分类号： C30B29/06 , C30B15/14 , C30B15/206
摘要： A single crystal is grown in accordance with a Czochralski method such that the time for passing through a temperature zone of 1150-1080.degree. C. is 20 minutes or less, or such that the length of a portion of the single crystal corresponding to the temperature zone of 1150-1080.degree. C. in the temperature distribution is 2.0 cm or less. Alternatively, the single crystal is grown such that the time for passing through a temperature zone of 1250-1200.degree. C. is 20 minutes or less, or such that the length of a portion of the single crystal corresponding to the temperature zone of 1250-1200.degree. C. in the temperature distribution is 2.0 cm or less. This method decreases both the density and size of so-called grown-in defects such as FPD (100 defects/cm.sup.2 or less), LSTD, and COP (10 defects/cm.sup.2 or less) to thereby enable efficient production of a single crystal having an excellent good chip yield (80% or greater) in terms of oxide dielectric breakdown voltage characteristics.

4. 发明授权

US5911821A Method of holding a monocrystal, and method of growing the same 失效
标题翻译：保持单晶的方法及其生长方法
公开(公告)号：US5911821A
公开(公告)日：1999-06-15
申请号：US923963
申请日：1997-09-05
申请人： Eiichi Iino , Makoto Iida , Masanori Kimura , Shozo Muraoka
发明人： Eiichi Iino , Makoto Iida , Masanori Kimura , Shozo Muraoka
IPC分类号： C30B15/00 , C30B15/30 , C30B15/32 , C30B29/06 , C30B15/04
CPC分类号： C30B15/32 , C30B15/30 , Y10S117/911 , Y10T117/1032 , Y10T117/1072
摘要： There is disclosed a Czochralski method in which a seed crystal in contact with material melt is pulled, while being rotated, so as to grow a monocrystal, and a part of the crystal being grown is mechanically held during the pulling operation. The crystal is mechanically held in such a way that the weight W(kg) of the crystal satisfies the following Formula (1):W
摘要翻译：公开了一种切克劳斯基方法，其中在旋转的同时拉动与材料熔体接触的晶种，以便生长单晶，并且在牵引操作期间机械地保持部分正在生长的晶体。机械地保持晶体，使得晶体的重量W（kg）满足下式（1）：W <12.5×pi D2 / 4（1）其中D表示颈部的最小直径（mm）。这使得可以安全可靠地拉出重的单晶。

5. 发明授权

US6159438A Method and apparatus for manufacturing a silicon single crystal having few crystal defects, and a silicon single crystal and silicon wafers manufactured by the same 有权
标题翻译：具有很少晶体缺陷的硅单晶的制造方法和装置以及由其制造的硅单晶硅晶片
公开(公告)号：US6159438A
公开(公告)日：2000-12-12
申请号：US359078
申请日：1999-07-22
申请人： Makoto Iida , Eiichi Iino , Masanori Kimura , Shozo Muraoka , Hideki Yamanaka
发明人： Makoto Iida , Eiichi Iino , Masanori Kimura , Shozo Muraoka , Hideki Yamanaka
IPC分类号： C30B15/00 , C30B15/14 , C30B15/22 , C30B29/06 , H01L21/02 , H01L21/208 , H01L21/322 , C01B33/26
CPC分类号： C30B29/06 , C30B15/14 , C30B15/203 , C30B15/206 , C30B15/22 , Y10S117/917 , Y10T117/1024 , Y10T117/1068 , Y10T117/1072 , Y10T117/1076 , Y10T117/108 , Y10T117/1088
摘要： In method for manufacturing a silicon single crystal in accordance with a Czochralski method, during the growth of the silicon single crystal, pulling is performed such that a solid-liquid interface in the crystal, excluding a peripheral 5 mm-width portion, exists within a range of an average vertical position of the solid-liquid interface.+-. 5 mm. There is also disclosed a method for manufacturing a silicon single crystal in accordance with the Czochralski method, wherein during the growth of a silicon single crystal, a furnace temperature is controlled such that a temperature gradient difference .DELTA.G (=Ge-Gc) is not greater than 5.degree. C./cm, where Ge is a temperature gradient (.degree. C./cm) at a peripheral portion of the crystal, and Gc is a temperature gradient (.degree. C./cm) at a central portion of the crystal, both in an in-crystal descending temperature zone between 1420.degree. C. and 1350.degree. C. or between a melting point of silicon and 1400.degree. C. in the vicinity of the solid-liquid interface of the crystal. The method maintains high productivity and enables a silicon single crystal and silicon wafers to be manufactured such that a defect density is very low over the entire crystal cross section, and the oxygen concentration distribution over the surface of each silicon wafer is improved.
摘要翻译：在使用Czochralski法制造硅单晶的方法中，在硅单晶的生长期间，进行拉伸，使得晶体内的固体 - 液体界面（不包括外围5mm宽度部分）存在于固液界面平均垂直位置的范围+/- 5 mm。还公开了根据Czochralski方法制造硅单晶的方法，其中在单晶生长期间，控制炉温，使得温度梯度差DELTA G（= Ge-Gc）不是大于5℃/ cm，其中Ge是晶体周边部分的温度梯度（℃/ cm），Gc是晶体中心部分的温度梯度（℃/ cm）在晶体的固 - 液界面附近，在1420℃至1350℃之间的晶体下降温度区域或硅熔点与1400℃之间。该方法保持高生产率，并且能够制造硅单晶和硅晶片，使得在整个晶体截面上的缺陷密度非常低，并且提高了每个硅晶片的表面上的氧浓度分布。

6. 发明授权

US6053975A Crystal holding apparatus 失效
标题翻译：水晶保持装置
公开(公告)号：US6053975A
公开(公告)日：2000-04-25
申请号：US39830
申请日：1998-03-16
申请人： Makoto Iida , Eiichi Iino , Masanori Kimura , Shozo Muraoka
发明人： Makoto Iida , Eiichi Iino , Masanori Kimura , Shozo Muraoka
IPC分类号： C30B15/30 , C30B15/32 , C30B29/06 , H01L21/208 , C30B35/00
CPC分类号： C30B15/30 , Y10T117/1072
摘要： In a crystal holding apparatus, a corrugated portion between a seed crystal and a straight cylindrical portion of a monocrystal is held by holding portions of a lifting jig during a monocrystal growth process in which the seed crystal is brought into contact with material melt and is subsequently pulled while being rotated. In the crystal holding apparatus, an attachment member for establishing surface contact with the corrugated portion of the crystal is attached to the tip end of each holding portion of the lifting jig. Therefore, the monocrystal can be held reliably, so that the breaking and falling down of the monocrystal during the pulling operation can be prevented.
摘要翻译：在晶体保持装置中，晶种与单晶的直圆柱形部分之间的波纹状部分通过在晶体与材料熔体接触的单晶生长过程中保持提升夹具的部分来保持，随后在旋转时拉动。在晶体保持装置中，在提升夹具的每个保持部分的末端安装有用于与晶体的波纹部分建立表面接触的附接构件。因此，可以可靠地保持单晶，从而可以防止在牵引操作期间单晶的断裂和下降。

7. 发明授权

US5968264A Method and apparatus for manufacturing a silicon single crystal having few crystal defects, and a silicon single crystal and silicon wafers manufactured by the same 失效
标题翻译：具有很少晶体缺陷的硅单晶的制造方法和装置以及由其制造的硅单晶硅晶片
公开(公告)号：US5968264A
公开(公告)日：1999-10-19
申请号：US109530
申请日：1998-07-02
申请人： Makoto Iida , Eiichi Iino , Masanori Kimura , Shozo Muraoka , Hideki Yamanaka
发明人： Makoto Iida , Eiichi Iino , Masanori Kimura , Shozo Muraoka , Hideki Yamanaka
IPC分类号： C30B15/00 , C30B15/14 , C30B15/22 , C30B29/06 , H01L21/02 , H01L21/208 , H01L21/322
CPC分类号： C30B29/06 , C30B15/14 , C30B15/203 , C30B15/206 , C30B15/22 , Y10S117/917 , Y10T117/1024 , Y10T117/1068 , Y10T117/1072 , Y10T117/1076 , Y10T117/108 , Y10T117/1088
摘要： In method for manufacturing a silicon single crystal in accordance with a Czochralski method, during the growth of the silicon single crystal, pulling is performed such that a solid-liquid interface in the crystal, excluding a peripheral 5 mm-width portion, exists within a range of an average vertical position of the solid-liquid interface .+-.5 mm. There is also disclosed a method for manufacturing a silicon single crystal in accordance with the Czochralski method, wherein during the growth of a silicon single crystal, a furnace temperature is controlled such that a temperature gradient difference .DELTA.G (=Ge-Gc) is not greater than 5.degree. C./cm, where Ge is a temperature gradient (.degree.C./cm) at a peripheral portion of the crystal, and Gc is a temperature gradient (.degree.C./cm) at a central portion of the crystal, both in an in-crystal descending temperature zone between 1420.degree. C. and 1350.degree. C. or between a melting point of silicon and 1400.degree. C. in the vicinity of the solid-liquid interface of the crystal. The method maintains high productivity and enables a silicon single crystal and silicon wafers to be manufactured such that a defect density is very low over the entire crystal cross section, and the oxygen concentration distribution over the surface of each silicon wafer is improved.
摘要翻译：在使用Czochralski法制造硅单晶的方法中，在硅单晶的生长期间，进行拉伸，使得晶体内的固体 - 液体界面（不包括外围5mm宽度部分）存在于固液界面平均垂直位置的范围+/- 5 mm。还公开了根据Czochralski方法制造硅单晶的方法，其中在单晶生长期间，控制炉温，使得温度梯度差DELTA G（= Ge-Gc）不是大于5℃/ cm，其中Ge是晶体周边部分的温度梯度（℃/ cm），Gc是晶体中心部分的温度梯度（℃/ cm）在晶体的固 - 液界面附近，在1420℃至1350℃之间的晶体下降温度区域或硅熔点与1400℃之间。该方法保持高生产率，并且能够制造硅单晶和硅晶片，使得在整个晶体截面上的缺陷密度非常低，并且提高了每个硅晶片的表面上的氧浓度分布。

8. 发明授权

US5948164A Seed crystal holder 失效
标题翻译：种子晶体座
公开(公告)号：US5948164A
公开(公告)日：1999-09-07
申请号：US140288
申请日：1998-08-25
申请人： Makoto Iida , Eiichi Iino , Masanori Kimura , Shozo Muraoka
发明人： Makoto Iida , Eiichi Iino , Masanori Kimura , Shozo Muraoka
IPC分类号： C30B15/32 , C30B29/06 , D04H1/4209 , H01L21/208 , C30B35/00
CPC分类号： C30B15/32 , Y10S117/90 , Y10S117/911 , Y10T117/10 , Y10T117/1072
摘要： A seed crystal holder used in a crystal pulling apparatus operated in accordance with the Czochralski method. In the seed crystal holder, a heat-resistant cushioning material is provided between the surface of a seed crystal and the contact surface of claws of the holder or between a cutaway surface of the seed crystal and a contact surface of an insert of the holder. The heat-resistant cushioning material is selected from the group consisting of carbon fiber felt, glass fiber felt, metallic fiber felt, or selected from materials that cause plastic deformation such as Al.
摘要翻译：用于根据切克劳斯基方法操作的晶体拉制装置中的晶种保持架。在种子晶体保持器中，在晶种的表面和保持器的爪的接触表面之间或晶种的切口表面与保持器的插入物的接触表面之间设置耐热缓冲材料。耐热缓冲材料选自碳纤维毡，玻璃纤维毡，金属纤维毡，或选自引起塑性变形的材料如Al。

9. 发明授权

US5871578A Methods for holding and pulling single crystal 失效
标题翻译：持有和拉取单晶的方法
公开(公告)号：US5871578A
公开(公告)日：1999-02-16
申请号：US915397
申请日：1997-08-20
申请人： Eiichi Iino , Makoto Iida , Masanori Kimura , Shozo Muraoka
发明人： Eiichi Iino , Makoto Iida , Masanori Kimura , Shozo Muraoka
IPC分类号： C30B15/00 , C30B15/24 , C30B15/30 , C30B29/06 , C30B33/04 , H01L21/208 , C30B15/32
CPC分类号： C30B15/30 , C30B15/305 , Y10S117/917
摘要： Oscillation of a growing crystal is suppressed in a Czochralski method when part of the growing crystal is mechanically held. Methods for holding and pulling a single crystal in a Czochralski method, wherein a seed crystal is pulled while rotating after the seed crystal is contacted with a raw material melt, part of the growing single crystal is mechanically held during pulling and the single crystal of heavy weight can be pulled regardless of mechanical strengths of the seed crystal or a neck portion thereof, wherein the raw material melt is under application of a magnetic field thereto when the growing crystal is mechanically held.
摘要翻译：当生长晶体的一部分被机械保持时，生长晶体的振荡被抑制在切克劳斯基法（Czochralski method）中。用Czochralski方法保持和拉取单晶的方法，其中在晶种与原料熔体接触之后，旋转时拉晶晶体，部分生长的单晶在拉伸期间被机械地保持，并且重结晶的单晶无论种子晶体或其颈部的机械强度如何，均可以拉伸重量，其中当机械保持生长的晶体时，原料熔体施加磁场。

10. 发明授权

US06599360B2 Silicon wafer, method for determining production conditions of silicon single crystal and method for producing silicon wafer 有权
标题翻译：硅晶片，用于确定硅单晶的生产条件的方法及其制造方法
公开(公告)号：US06599360B2
公开(公告)日：2003-07-29
申请号：US09936920
申请日：2001-09-20
申请人： Makoto Iida , Masanori Kimura
发明人： Makoto Iida , Masanori Kimura
IPC分类号： C30B1502
CPC分类号： C30B29/06 , C30B15/203 , C30B15/206 , G01N2033/0095 , H01L21/3225
摘要： According to the present invention, there are provided a silicon wafer, wherein an epi-layer is not formed on a surface, and number of LSTDs having a size of 50 nm or more existing in a surface layer portion is 0.24 number/cm2 or less; a method for determining production conditions of a silicon single crystal, which comprises pulling nitrogen-doped silicon single crystals by the CZ method while varying V/G and/or PT, producing silicon wafers from the silicon single crystals, subjecting the silicon wafers to a heat treatment, determining acceptability of the wafers based on a predetermined characteristic value, obtaining correlation between the acceptability and V/G and PT, and determining production conditions based on the correlation; and a method for producing a silicon wafer comprising pulling a silicon single crystal so that V/G and PT should be lower than V/G and shorter than PT that are uniquely defined by predetermined nitrogen concentration and oxygen concentration in the silicon single crystal, conditions of heat treatment to which the silicon wafer is subjected, and grown-in defect density of the silicon wafer. According to the present invention, a nitrogen-doped annealed wafer showing a low defect density even under severe examination conditions and little fluctuation thereof depending on the production condition is produced.
摘要翻译：根据本发明，提供了一种硅晶片，其中在表面上不形成外延层，存在于表层部分中的具有50nm以上的尺寸的LSTD的数量为0.24个/ cm 2以下 ; 一种用于测定硅单晶的生产条件的方法，其包括在改变V / G和/或PT的同时通过CZ方法拉氮掺杂的硅单晶，从硅单晶产生硅晶片，将硅晶片热处理，基于预定特征值确定晶片的可接受性，获得可接受性与V / G和PT之间的相关性，并且基于相关性确定生产条件; 以及用于制造硅晶片的方法，其包括拉制单晶硅，使得V / G和PT应低于由单晶中的预定氮浓度和氧浓度唯一限定的V / G并且短于PT，条件硅晶片经受的热处理和硅晶片的成长缺陷密度。根据本发明，即使在严格的检查条件下，即使在生产条件下也产生不大的波动的氮掺杂退火晶片。

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