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51. 发明授权

US3933123A Liquid phase epitaxy 失效
标题翻译：液相外延
公开(公告)号：US3933123A
公开(公告)日：1976-01-20
申请号：US535045
申请日：1974-12-19
申请人： Elie Andre
发明人： Elie Andre
IPC分类号： C30B19/06 , C30B19/12 , B05C11/12 , H01L7/38
CPC分类号： C30B19/12 , C30B19/063 , Y10S117/912
摘要： A method of and a device for the epitaxial deposition of a layer on a monocrystalline substrate from a material in the liquid state, in which during the deposition process apportioned quantities of a second material are added to the said material in the liquid state, a jig being used having a plurality of vertically spaced, fixed and slidable walls for controlling the addition. Application inter alia for the provision of semiconductor layers, for example, of material of the type A.sup.III B.sup.V, in particular from mixed crystals.
摘要翻译：一种用于从液态的材料外延沉积在单晶衬底上的层的方法和装置，其中在沉积过程中将第二材料的分配量以液态添加到所述材料中，夹具被使用具有多个垂直间隔开的固定和可滑动的壁来控制加法。特别是用于提供半导体层的应用，例如提供AIIIBV型材料，特别是从混晶中提供的材料。

52. 发明授权

US3781209A Method of producing homogeneous rods of semiconductor material 失效
标题翻译：生产半导体材料均质体的方法
公开(公告)号：US3781209A
公开(公告)日：1973-12-25
申请号：US3781209D
申请日：1971-12-02
申请人： SIEMENS AG
发明人： REUSCHEL K , DIETZE W , MUHLBAUER A , SANDMANN H
IPC分类号： C30B13/00 , C30B13/08 , C30B13/10 , B01J17/08
CPC分类号： C30B13/08 , C30B13/00 , C30B13/10 , Y10S117/912
摘要： A PERPENDICULAR TUBE OF SEMICONDUCTOR MATERIAL IS FILLED WITH CRYSTALLINE SEMICONDUCTOR WASTE AND/OR DOPANT. A MOLTEN ZONE IS GUIDED THROUGH THE TUBE AND THE FILLING, WHEREBY THE FILLING FUSES WITH THE TUBE.

53. 发明授权

US3573190A Apparatus for depositing semiconductor material and forming semiconductor junctions 失效
标题翻译：沉积半导体材料和形成半导体结的装置
公开(公告)号：US3573190A
公开(公告)日：1971-03-30
申请号：US3573190D
申请日：1968-10-31
申请人： TRW INC
发明人： BLOOM MURRAY
IPC分类号： C23C14/35 , H01L21/00 , C23C15/00
CPC分类号： C23C14/35 , H01L21/00 , Y10S117/912 , Y10S148/049 , Y10S148/107 , Y10S148/152 , Y10S148/158 , Y10S148/166 , Y10S148/169 , Y10S148/17
摘要： THERE IS DISCLOSED AN APPARATUS FOR SPUTTER DEPOSITING A LAYER OF SEMICONDUCTOR MATERIAL FROM A CATHODE ONTO A SEMICONDUCTOR SUBSTRATE THROUGH A MOLTEN METAL ALLOY LAYER ON THE SUBSTRATE. MEANS ARE PROVIDED TO SENSE THE TEMPERATURE OF THE SUBSTRATE IN ORDER TO CONTROL MEANS FOR SHIELDING THE ALLOY LAYER UNTIL THE SUBSTRATE REACHES A TEMPERATURE SUCH THAT THE SURFACE OF THE SUBSTRATE ITSELF IS SLIGHTLY BELOW THE MELTING POINT OF THE MATERIAL TO BE DEPOSITED WHEREAS THE SURFACE OF THE MOLTEN LAYER IS MAINTAINED BY THE SPUTTERING APPARATUS AT A TEMPERATURE WHICH IS ABOVE THE MELTING POINT OF THE MATERIAL TO BE SPUTTER DEPOSITED. THE APPARATUS THUS ASSURES THAT THE SPUTTERED MATERIAL WILL DISSOLVE INTO THE ALLOY AT ITS HIGH TEMPERATURE SURFACE AND CRYSTALLIZE ONTO THE SURFACE OF THE SUBSTRATE.

54. 发明授权

US3561931A Eccentric feed rotation in zone refining 失效
标题翻译：区域精炼中的偏心进给旋转
公开(公告)号：US3561931A
公开(公告)日：1971-02-09
申请号：US3561931D
申请日：1967-08-04
申请人： SIEMENS AG
发明人： VOGEL CARL-HEINZ , SPORRER LUDWIG
IPC分类号： C30B13/32 , B01J17/10
CPC分类号： C30B13/32 , Y10S117/91 , Y10S117/912 , Y10T117/1072 , Y10T117/1076
摘要： PROCESS OF ZONE MELTING A SEMICONDUCTOR ROD HAVING UNDER PROCESS, A RECRYSTALLIZED PORTION AND SUPPLY PORTION TO BE RECRYSTALLIZED, EACH SEPARATED FROM THE OTHER BY A MOLTEN ZONE, INCLUDES SUPPORTING THE ROD SUBSTANTIALLY VERTICALLY BY FIRST AND SECOND HOLDERS RESPECTIVELY LOCATED AT THE FREE ENDS OF THE SUPPLY ROD PORTION AND THE RECRYSTALLIZED ROD PORTION, FORMING THE MOLTEN ZONE IN THE ROD WITH AN ANNULAR HEATING DEVICE SPACED FROM AND SURROUNDING THE ROD, RELATIVELY MOVING THE ROD AND THE HEATING DEVICE IN A SUBSTANTIALLY VERTICAL DIRECTION SO AS TO PASS THE MOLTEN ZONE ALONG THE ROD, ROTATING AT LEAST ONE OF THE END HOLDERS ABOUT THE SUBSTANTIALLY VERTICAL AXIS OF THE ROD PORTION AT THE FREE END OF WHICH THE END HOLDER IS LOCATED, RELATIVELY MOVING THE END HOLDER TOWARDS ONE ANOTHER AND LATERALLY AWAY FROM ONE ANOTHER AT PREDETERMINED SPEEDS SO AS TO INCREASE THE THICKNESS OF THE RECRYSTALLIZED ROD PORTION IN A DIRECTION RADIALLY OUTWARDLY TO THE ANNULAR HEATING DEVICE AND ROTATING THE SUPPLY ROD PORTION ABOUT AN AXIS ECCENTRIC TO THE SUBSTANTIALLY VERTICAL AXIS OF THE SUPPLY ROD PORTION. APPARATUS FOR CARRYING OUT THE FOREGOING METHOD INCLUDES SUBSTANTIALLY VERTICAL SPACED END HOLDERS SUPPORTING BETWEEN THEM A VERTICALLY EXTENDING SEMICONDUCTOR ROD HAVING A RECRYSTALLIZED PORTION AND A SUPPLY PORTION TO BE RECRYSTALLIZED DIVIDED BY A MOLTEN ZONE, MEANS FOR RELATIVELY DISPLACING THE END HOLDERS TOWARD ONE ANOTHER, AN ANNULAR HEATING DEVICE SURROUNDING AND SPACED FROM THE ROD AND ADAPTED TO FORM THE MOLTEN ZONE IN THE ROD, MEANS FOR DISPLACING THE HEATING DEVICE ALONG THE ROD SO AS TO PASS THE MOLTEN ZONE ALONG THE ROD, MEANS FOR ROTATING AT LEAST ONE OF THE END HOLDERS ABOUT ITS SUBSTANTIALLY VERTICAL AXIS, MEANS FOR DISPLACING ONE OF THE END HOLDERS IN A DIRECTION TRANSVERSE TO THE AXIS THEREOF SO THAT THE RECRYSTALLIZED ROD PORTION IS FORMED WITH A SPECIFIC DIAMETER EXTENDING IN DIRECTION TOWARD THE ANNULAR HEATING DEVICE, AND MEANS FOR ROTATING THE SUPPLY ROD PORTION ABOUT AN AXIS ECCENTRIC TO THE AXIS OF THE SUPPLY ROD PORTION.

55. 发明授权

US3539305A Zone refining method with plural supply rods 失效
标题翻译：区域精炼方法与广泛的供应链
公开(公告)号：US3539305A
公开(公告)日：1970-11-10
申请号：US3539305D
申请日：1967-09-27
申请人： SIEMENS AG
发明人： KELLER WOLFGANG
IPC分类号： C30B13/28 , B01J17/00
CPC分类号： C30B13/28 , Y10S117/91 , Y10S117/912

56. 发明授权

US3296036A Apparatus and method of producing semiconductor rods by pulling the same from a melt 失效
标题翻译：通过从熔体中拉出半导体棒来制造半导体棒的装置和方法
公开(公告)号：US3296036A
公开(公告)日：1967-01-03
申请号：US50205465
申请日：1965-10-22
申请人： SIEMENS AG
发明人： WOLFGANG KELLER
IPC分类号： C30B13/20 , C30B15/08
CPC分类号： C30B13/20 , C30B15/08 , Y10S117/901 , Y10S117/91 , Y10S117/912 , Y10S117/917 , Y10T117/1056 , Y10T117/1068

57. 发明授权

US07922817B2 Method and device for feeding arsenic dopant into a silicon crystal growing apparatus 有权
标题翻译：将砷掺杂剂进料到硅晶体生长装置中的方法和装置
公开(公告)号：US07922817B2
公开(公告)日：2011-04-12
申请号：US12108923
申请日：2008-04-24
申请人： Massoud Javidi , Steve Garner
发明人： Massoud Javidi , Steve Garner
IPC分类号： C30B35/00
CPC分类号： C30B15/02 , C30B15/04 , Y10S117/912 , Y10T117/10 , Y10T117/1024 , Y10T117/1056 , Y10T117/1072
摘要： A feed assembly and method of use thereof of the present invention is used for the addition of a high pressure dopant such as arsenic into a silicon melt for CZ growth of semiconductor silicon crystals. The feed assembly includes a vessel-and-valve assembly for holding dopant, and a feed tube assembly, attached to the vessel-and-valve assembly for delivering dopant to a silicon melt. An actuator is connected to the feed tube assembly and a receiving tube for advancing and retracting the feed tube assembly to and from the surface of the silicon melt. A brake assembly is attached to the actuator and the receiving tube for restricting movement of the feed tube assembly and locking the feed tube assembly at a selected position.
摘要翻译：使用本发明的进料组件及其使用方法用于将诸如砷的高压掺杂剂添加到硅熔体中用于半导体硅晶体的CZ生长。进料组件包括用于保持掺杂剂的容器和阀组件，以及连接到容器和阀组件的进料管组件，用于将掺杂剂输送到硅熔体。致动器连接到进料管组件和用于将进料管组件前进和后退到硅熔体表面的接收管。制动组件附接到致动器和接收管，用于限制进料管组件的运动并将进料管组件锁定在选定位置。

58. 发明申请

US20100132829A1 METHOD FOR FEEDING ARSENIC DOPANT INTO A SILICON CRYSTAL GROWING APPARATUS 有权
标题翻译：将茜素甙投入硅晶体生长装置的方法
公开(公告)号：US20100132829A1
公开(公告)日：2010-06-03
申请号：US12625931
申请日：2009-11-25
申请人： Massoud Javidi , Steve Garner
发明人： Massoud Javidi , Steve Garner
IPC分类号： B65B1/04
CPC分类号： C30B15/02 , C30B15/04 , Y10S117/912 , Y10T117/10 , Y10T117/1024 , Y10T117/1056 , Y10T117/1072
摘要： A feed assembly and method of use thereof of the present invention is used for the addition of a high pressure dopant such as arsenic into a silicon melt for CZ growth of semiconductor silicon crystals. The feed assembly includes a vessel-and-valve assembly for holding dopant, and a feed tube assembly, attached to the vessel-and-valve assembly for delivering dopant to a silicon melt. An actuator is connected to the feed tube assembly and a receiving tube for advancing and retracting the feed tube assembly to and from the surface of the silicon melt. A brake assembly is attached to the actuator and the receiving tube for restricting movement of the feed tube assembly and locking the feed tube assembly at a selected position.
摘要翻译：使用本发明的进料组件及其使用方法用于将诸如砷的高压掺杂剂添加到硅熔体中用于半导体硅晶体的CZ生长。进料组件包括用于保持掺杂剂的容器和阀组件，以及连接到容器和阀组件的输送管组件，用于将掺杂剂输送到硅熔体。致动器连接到进料管组件和用于将进料管组件前进和后退到硅熔体表面的接收管。制动组件附接到致动器和接收管，用于限制进料管组件的运动并将进料管组件锁定在选定位置。

59. 发明申请

US20050211156A1 METHOD FOR MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL FROM DISLOCATION CONTROL SEED CRYSTAL 有权
标题翻译：从偏心控制晶体晶体制造碳化硅单晶的方法
公开(公告)号：US20050211156A1
公开(公告)日：2005-09-29
申请号：US10911745
申请日：2004-08-05
申请人： Itaru Gunjishima , Daisuke Nakamura , Naohiro Sugiyama , Fusao Hirose
发明人： Itaru Gunjishima , Daisuke Nakamura , Naohiro Sugiyama , Fusao Hirose
IPC分类号： C30B29/38 , C30B1/00 , C30B23/00 , C30B29/36
CPC分类号： C30B29/36 , C30B23/00 , Y10S117/902 , Y10S117/912
摘要： A method for manufacturing a silicon carbide single crystal includes the steps of: preparing a seed crystal with a screw dislocation generation region; and growing the single crystal on a growth surface of the seed crystal. The generation region occupies equal to or smaller than 50% of the growth surface, which has an offset angle equal to or smaller than 60 degrees. The screw dislocation density in the single crystal generated from the generation region is higher than that in the other region. The single crystal includes a flat C-surface facet disposed on a growing surface of the single crystal. The C-surface facet overlaps at least one of parts of the growing surface provided by projecting the generation region in a direction perpendicular to the growth surface and in a direction parallel to a axis, respectively.
摘要翻译：制造碳化硅单晶的方法包括以下步骤：用螺旋位错产生区制备晶种; 并在晶种的生长表面上生长单晶。生成区域占据生长面的50％以下，其具有等于或小于60度的偏移角。从发生区域产生的单晶中的螺旋位错密度高于其他区域中的螺旋位错密度。单晶包括设置在单晶生长表面上的平坦C面小面。 C面表面与生长表面的至少一部分重叠，所述至少一部分通过在与生长表面垂直的方向上并且在平行于<0001轴的方向分别投影生成区域而提供。

60. 发明授权

US5700321A Method of feeding a dopant in a continuously charging method 失效
标题翻译：以连续充电方式供给掺杂剂的方法
公开(公告)号：US5700321A
公开(公告)日：1997-12-23
申请号：US687690
申请日：1996-07-26
申请人： Keishi Niikura
发明人： Keishi Niikura
IPC分类号： C30B15/02 , C30B15/04 , C30B29/06 , H01L21/208
CPC分类号： C30B15/02 , C30B15/04 , Y10S117/912 , Y10S252/95
摘要： The object of the present invention affords a method of feeding dopant and a dopant composition used therein for easily preparing single crystals having a desired doping concentration during semiconductor substrate fabrication. In accordance with the present invention, a water solution containing oxides of the dopant is first added to the liquid containing colloidal silica. The colloidal silica can adsorb the oxides of the dopant to form a dopant composition. Around rod-shaped polysilicon, that is polysilicon rod, the dopant composition is discontinuously coated on the periphery of the polysilicon rods spaced at constant intervals and then dried. When the polysilicon rods are melted in an apparatus for manufacturing single crystals by a heater, dopant is protected by the glassed silica without evaporation. Accordingly, the dopant can be provided at a predetermined concentration to sustain the grown single crystals having a doping concentration as required.
摘要翻译：本发明的目的是提供一种在半导体衬底制造期间使掺杂剂和掺杂剂组合物用于容易地制备具有所需掺杂浓度的单晶的方法。根据本发明，首先将含有掺杂剂氧化物的水溶液加入到含有胶体二氧化硅的液体中。胶体二氧化硅可以吸附掺杂剂的氧化物以形成掺杂剂组合物。在棒状多晶硅（即多晶硅棒）周围，掺杂剂组合物不连续地涂覆在多晶硅棒的周边上，间隔一定间隔然后干燥。当多晶硅棒在用于通过加热器制造单晶的装置中熔化时，掺杂剂被玻璃状二氧化硅保护而不蒸发。因此，可以以预定浓度提供掺杂剂，以维持根据需要具有掺杂浓度的生长单晶。

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