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    • 58. 发明公开
    • 포지티브 포토레지스트 조성물
    • 一个积极的光电组成
    • KR1020110035528A
    • 2011-04-06
    • KR1020090093295
    • 2009-09-30
    • 동우 화인켐 주식회사
    • 이은상임민주진성열김성현
    • G03F7/023G03F7/039G03F7/038C08F2/48
    • G03F7/023C08F2/48G03F7/0381G03F7/0385G03F7/0392Y10S430/1055
    • PURPOSE: A positive photo-resist composition is provided to overcome the damage of substrates and metal films in a four masks-based dry etching process by forming patterns into a nearly vertical shape. CONSTITUTION: A positive photo-resist composition includes an alkaline soluble resin, a photo-resist agent, an additive containing a compound represented by chemical formula 1, and a solvent. In the chemical formula 1, R1, R2, and R3 are respectively H or a group represented by chemical formula 2. The alkaline soluble resin is a novolak resin. The photo-resist agent is the ester compound of a phenolic compound containing hydroxyl group and a quinone diazide sulfonic acid compound. The solvent is one or more, or two or more selected from a group including glycol ether ester, glycol ether, ester, ketone, and cyclic ester.
    • 目的:提供正型光致抗蚀剂组合物,以通过将图案形成几乎垂直的形状来克服基于四个基于掩模的干蚀刻工艺中的基板和金属膜的损伤。 构成:正型光致抗蚀剂组合物包括碱溶性树脂,光致抗蚀剂,含有由化学式1表示的化合物的添加剂和溶剂。 在化学式1中,R1,R2和R3分别为H或由化学式2表示的基团。碱溶性树脂是酚醛清漆树脂。 光致抗蚀剂是含羟基的酚类化合物和醌二叠氮磺酸化合物的酯化合物。 溶剂是选自包括乙二醇醚酯,二醇醚,酯,酮和环酯的一个或多个或两个或更多个。