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    • 7. 发明公开
    • 포지티브 포토레지스트 조성물
    • 积极的光电组成
    • KR1020120068463A
    • 2012-06-27
    • KR1020100130097
    • 2010-12-17
    • 동우 화인켐 주식회사
    • 장원영조용환이은상임민주
    • G03F7/039G03F7/022
    • PURPOSE: A positive photoresist composition and a method for manufacturing a thin film transistor using the same are provided to improve working environment by reducing the generating amount of bad odor. CONSTITUTION: A positive photoresist composition includes an alkali soluble resin represented by chemical formula 1, a diazide-based photo-sensitive compound, and a mixed solvent. The mixed solvent includes 40-80 weight% of propylene glycol monomethyl ether acetate, 10-40 weight% of ethyl 2-hydroxy propionate, and 1-20 weight% of 3-cyclohexene-1-methanol based on the total weight of the solvent. In chemical formula 1, R9 to R14 are respectively selected from a group including hydrogen atoms, C1 to C6 linear or branched alkyl groups, C1 to C6 linear or branched alkoxy groups, and C3 to C6 cycloalkyl groups; R15 to R18 are respectively selected from a group including hydrogen atoms, C1 to C6 linear or branched alkyl groups, and C6 to C18 aryl groups; and n is 1 to 300.
    • 目的:提供正性光致抗蚀剂组合物和使用其的薄膜晶体管的制造方法,以通过减少恶臭的产生量来改善工作环境。 构成:正性光致抗蚀剂组合物包括由化学式1表示的碱溶性树脂,二叠氮基光敏化合物和混合溶剂。 混合溶剂包括40-80重量%的丙二醇单甲醚乙酸酯,10-40重量%的2-羟基丙酸乙酯和1-20重量%的3-环己烯-1-甲醇,基于溶剂的总重量 。 在化学式1中,R 9至R 14分别选自氢原子,C 1至C 6直链或支链烷基,C 1至C 6直链或支链烷氧基和C 3至C 6环烷基; R 15〜R 18分别选自氢原子,C1〜C6直链或支链烷基和C6〜C18芳基; n为1〜300。
    • 8. 发明公开
    • 포지티브 포토레지스트 조성물
    • 积极的光电组成
    • KR1020120068460A
    • 2012-06-27
    • KR1020100130094
    • 2010-12-17
    • 동우 화인켐 주식회사
    • 윤종흠장원영이은상임민주
    • G03F7/039G03F7/022
    • G03F7/0392G03F7/0045G03F7/022G03F7/0226G03F7/039G03F7/0397G03F7/075G03F7/0757G03F7/0758
    • PURPOSE: A positive photo-resist composition is provided to overcome problems occurring in a reflow phenomenon after a hard baking process by forming patterns of constant shapes after a baking process. CONSTITUTION: A positive photo-resist composition includes an alkali soluble resin, a dissolution inhibitor, a compound represented by chemical formula 1, and a solvent. In chemical formula 1, A is an oxygen atom or a sulfur atom; R1 is selected from a group including a hydrogen atom, a halogen atom, a C1 to C6 linear or branched alkyl group, a C1 to C5 fluoroalkyl group, a C6 to C18 aryl group, a C4 to C18 heteroaryl group; R2 is a hydrogen atom, a C1 to C6 linear or branched alkyl group, a C2 to C6 linear or branched alkenyl group, a C6 to C18 aryl group, C4 to C18 heteroaryl group, C2 to C6 alkylcarbonyl group, C2 to C6 alkoxylcarbonyl group, or a C2 to C6 N-alkylcarbamoyl group; and n is 1 to 5.
    • 目的:提供一种正型光致抗蚀剂组合物,用于通过在烘烤过程之后形成恒定形状的图案来克服在硬烘烤过程之后的回流现象中出现的问题。 构成:正型光致抗蚀剂组合物包括碱溶性树脂,溶解抑制剂,由化学式1表示的化合物和溶剂。 在化学式1中,A是氧原子或硫原子; R1选自氢原子,卤素原子,C1〜C6直链或支链烷基,C1〜C5氟代烷基,C6〜C18芳基,C4〜C18杂芳基等基团。 R2是氢原子,C1〜C6直链或支链烷基,C2〜C6直链或支链烯基,C6〜C18芳基,C4〜C18杂芳基,C2〜C6烷基羰基,C2〜C6烷氧基羰基 ,或C 2〜C 6 N-烷基氨基甲酰基; n为1〜5。