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    • 57. 发明授权
    • Broadband corrugated horn radiator
    • 宽带瓦楞喇叭辐射器
    • US4472721A
    • 1984-09-18
    • US357200
    • 1982-03-11
    • Gunter MorzFrancesco Intoppa
    • Gunter MorzFrancesco Intoppa
    • H01P1/16H01Q13/02
    • H01P1/16H01Q13/0225
    • A broadband corrugated horn radiator including a hybrid mode exciting member whose inner cross section is constant over its entrie length and a transition member from the cross section of the hybrid mode exciting member to the cross section of the horn aperture. The length and the inner cross section of the hybrid mode exciting member are dimensioned such that the waveguide mode entering this excitation member is converted completely only to the desired hybrid mode type, the pitch of the wall of the transition member is such that no interference waves are able to exist therein, and the corrugation grooves in all members of the horn radiator are matched, by appropriate dimensioning, to the same transmission bandwith.
    • 一种宽带瓦楞喇叭辐射器,其包括其内截面在其长度上恒定的混合模式激励构件和从混合模式激励构件的横截面到喇叭孔的横截面的过渡构件。 混合模式激励部件的长度和内部横截面的尺寸使得进入该激励部件的波导模式完全转换为期望的混合模式类型,过渡部件的壁的间距使得没有干扰波 能够存在于其中,并且喇叭辐射体的所有构件中的波纹槽通过适当的尺寸匹配到相同的传输带。
    • 58. 发明授权
    • Semiconductor laser
    • 半导体激光器
    • US4359775A
    • 1982-11-16
    • US178568
    • 1980-08-15
    • Peter MarschallKlaus PetermannEwald SchlosserHans-Peter VollmerClaus Wolk
    • Peter MarschallKlaus PetermannEwald SchlosserHans-Peter VollmerClaus Wolk
    • H01S5/00H01S5/20H01S5/323H01S3/19
    • H01S5/32308H01S5/20H01S5/2059
    • A semi-conductor laser comprising a crystal having a sequence of layers forming a heterostructure diode and which includes a laser active zone interposed between a pair of semiconductor layers. Each of these semi-conductor layers has a band gap which is greater than that of the layers within the laser active zone. The laser active zone includes a first semiconductor layer having a given band gap, and at least second and third semiconductor layers each having a band gap which is greater than that of the first layer. The first layer is contiguous with and interposed between semiconductor layers each having a band gap which is greater than that of said first layer and forms a pn-junction with one of those contiguous layers. A strip-shaped region of a uniform conductivity type diffused from the surface of the crystal penetrates into at least one layer of the laser active zone but does not penetrate into the first layer.
    • 一种半导体激光器,包括具有形成异质结构二极管的层序列的晶体,并且包括插入在一对半导体层之间的激光器活性区域。 这些半导体层中的每一个具有比激光活性区内的层的带隙大的带隙。 激光活性区域包括具有给定带隙的第一半导体层,以及至少第二和第三半导体层,每个半导体层的带隙大于第一层的带隙。 第一层与每个具有大于所述第一层的带隙的带隙相邻并且插入在半导体层之间并且与这些邻接层之一形成pn结。 从晶体表面扩散的均匀导电类型的条状区域穿透至激光活性区域的至少一层,但不会渗入第一层。
    • 59. 发明授权
    • Modulator and demodulator circuits for modified delay modulation method
    • 用于修改延迟调制方法的调制器和解调器电路
    • US4346353A
    • 1982-08-24
    • US154127
    • 1980-05-29
    • Werner Scholz
    • Werner Scholz
    • H03M5/12H04L25/49H03K7/10H03K9/10
    • H04L25/4904
    • In a modulation and demodulation system for converting a binary sequence composed of a succession of bits, each having a value of "1" or "0", occurring in successive bit intervals, into a transmitted signal containing a representation of each bit, by representing a bit of one value as a change in the level of the transmitted signal at a time corresponding to the middle of the associated bit interval, and representing a bit of the other value as a change in the level of the transmitted signal at a time corresponding to the end of the associated bit interval if a further bit of the other value follows, transmitted signal level changes associated with the bits of the other value are in part suppressed for causing the time period between level changes in the transmitted signal to be no longer than the period of more than two consecutive level changes at intervals equal to each bit interval and associated with the bits of the other value.
    • 在用于将由连续比特间隔中出现的具有“1”或“0”值的一系列比特组成的二进制序列转换成包含每个比特的表示的发送信号的调制和解调系统中, 作为在与相关联的位间隔的中间相对应的时间处的发送信号的电平的变化的一个值,并且将另一个值的位表示为在相应的时间处的发送信号的电平的变化 到相关位间隔的结尾,如果另一个值的另一个比特跟随,则与另一个值的比特相关联的发射信号电平变化被部分地抑制,以使发射信号的电平变化之间的时间周期不再 比等于每个位间隔的间隔多于两个连续电平变化的周期,并与另一个值的位相关联。