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51. 发明申请

US20050079440A1 Novel polymer, positive resist composition, and patterning process using the same 有权
标题翻译：新型聚合物，正性抗蚀剂组合物和使用其的图案化工艺
公开(公告)号：US20050079440A1
公开(公告)日：2005-04-14
申请号：US10945397
申请日：2004-09-21
申请人： Jun Hatakeyama , Yuji Harada , Yoshio Kawai
发明人： Jun Hatakeyama , Yuji Harada , Yoshio Kawai
IPC分类号： C08F220/18 , C08F220/24 , C08F220/28 , G03C1/76 , G03F7/004 , G03F7/039
CPC分类号： G03F7/0397 , C08F220/18 , C08F220/24 , C08F220/28 , G03F7/0046 , Y10S430/111
摘要： There is disclosed a polymer which at least has the repeating unit represented by the following general formula (1a), and the repeating unit represented by the following general formula (1b) and/or the repeating unit represented by the following general formula (1c), and a positive resist composition comprising the polymer as a base resin. There can be provided a positive resist composition having high sensitivity and high resolution on exposure to a high energy beam, wherein line edge roughness is reduced since swelling at the time of development is suppressed, and the residue after development is little.
摘要翻译：公开了至少具有下述通式（1a）表示的重复单元和下述通式（1b）表示的重复单元和/或下述通式（1c）表示的重复单元的聚合物，以及包含该聚合物作为基础树脂的正性抗蚀剂组合物。可以提供在暴露于高能量束时具有高灵敏度和高分辨率的正性抗蚀剂组合物，其中由于在显影时的膨胀被抑制，线边缘粗糙度降低，并且显影后的残留物很小。

52. 发明申请

US20100209849A1 PATTERN FORMING PROCESS AND RESIST-MODIFYING COMPOSITION 有权
标题翻译：图案形成过程和电阻修饰组合物
公开(公告)号：US20100209849A1
公开(公告)日：2010-08-19
申请号：US12708196
申请日：2010-02-18
申请人： Takeru Watanabe , Masashi Iio , Jun Hatakeyama , Tsunehiro Nishi , Yoshio Kawai
发明人： Takeru Watanabe , Masashi Iio , Jun Hatakeyama , Tsunehiro Nishi , Yoshio Kawai
IPC分类号： G03F7/027 , G03F7/20 , G03F7/004
CPC分类号： G03F7/0397 , G03F7/0035 , G03F7/40
摘要： A patterning process includes (1) coating and baking a first positive resist composition to form a first resist film, exposing, post-exposure baking, and alkali developing to form a first resist pattern, (2) applying a resist-modifying composition to the first resist pattern and heating to modify the first resist pattern, (3) coating and baking a second positive resist composition to form a second resist film, exposing, post-exposure baking, and alkali developing to form a second resist pattern. The modified first resist film has a contact angle with pure water of 50°-85°.
摘要翻译：图案化工艺包括（1）涂覆和烘烤第一正性抗蚀剂组合物以形成第一抗蚀剂膜，曝光，曝光后烘烤和碱显影以形成第一抗蚀剂图案，（2）将抗蚀剂改性组合物施加到第一抗蚀剂图案和加热以修饰第一抗蚀剂图案，（3）涂覆和烘烤第二正性抗蚀剂组合物以形成第二抗蚀剂膜，曝光，曝光后烘烤和碱显影以形成第二抗蚀剂图案。改性的第一抗蚀剂膜与纯水的接触角为50°-85°。

53. 发明授权

US08741548B2 Patterning process 有权
标题翻译：图案化过程
公开(公告)号：US08741548B2
公开(公告)日：2014-06-03
申请号：US12194129
申请日：2008-08-19
申请人： Jun Hatakeyama , Takao Yoshihara , Katsuya Takemura , Yoshio Kawai
发明人： Jun Hatakeyama , Takao Yoshihara , Katsuya Takemura , Yoshio Kawai
IPC分类号： G03F7/30 , G03F7/40 , G03F7/38 , G03F7/039
CPC分类号： G03F7/40 , G03F7/0035 , G03F7/0397 , G03F7/2041 , G03F7/38 , H01L21/0274 , H01L21/3081 , H01L21/31144 , H01L21/32139
摘要： A pattern is formed by applying a first positive resist composition onto a substrate, heat treatment, exposure, heat treatment and development to form a first resist pattern; causing the first resist pattern to crosslink and cure by irradiation of high-energy radiation of up to 180 nm wavelength or EB; further applying a second positive resist composition onto the substrate, heat treatment, exposure, heat treatment and development to form a second resist pattern. The double patterning process reduces the pitch between patterns to one half.
摘要翻译：通过将第一正性抗蚀剂组合物施加到基材上，热处理，曝光，热处理和显影以形成第一抗蚀剂图案而形成图案; 使得第一抗蚀剂图案通过辐射高达180nm波长或EB的高能量辐射而交联和固化; 进一步将第二正性抗蚀剂组合物施加到基材上，进行热处理，曝光，热处理和显影以形成第二抗蚀剂图案。双重图案化工艺将图案之间的间距缩小到一半。

54. 发明申请

US20100055621A1 Patterning process 有权
标题翻译：图案化过程
公开(公告)号：US20100055621A1
公开(公告)日：2010-03-04
申请号：US12458884
申请日：2009-07-27
申请人： Jun Hatakeyama , Kazuhiro Katayama , Yoshio Kawai
发明人： Jun Hatakeyama , Kazuhiro Katayama , Yoshio Kawai
IPC分类号： G03F7/20
CPC分类号： H01L21/0332 , H01L21/0275 , H01L21/0337
摘要： There is disclosed a patterning process including steps of at least: forming a photoresist film on a substrate; exposing the photoresist film to a high energy beam; developing by using a developer; forming a photoresist pattern; and then forming a spacer on the photoresist pattern sidewall, thereby forming a pattern on the substrate, a patterning process, wherein at least the photoresist pattern having the hardness of 0.4 GPa or more or the Young's modulus of 9.2 GPa or more as a film strength is formed, and a pattern is formed on the substrate by forming a silicon oxide film as the spacer on the photoresist pattern sidewall. There can be provided a patterning process without causing a deformation of a resist pattern and an increase in LWR at the time of forming a silicon oxide film on a photoresist pattern.
摘要翻译：公开了一种图案化工艺，其包括至少在衬底上形成光致抗蚀剂膜的步骤; 将光致抗蚀剂膜暴露于高能量束; 使用开发商开发; 形成光致抗蚀剂图案; 然后在光致抗蚀剂图案侧壁上形成间隔物，从而在基板上形成图案，图案化工艺，其中至少具有0.4GPa或更高的硬度的光刻胶图案或9.2GPa或更大的杨氏模量作为膜强度并且通过在光致抗蚀剂图案侧壁上形成作为间隔物的氧化硅膜在衬底上形成图案。可以提供图案化工艺，而不会在抗蚀剂图案上形成氧化硅膜时引起抗蚀剂图案的变形和增加的LWR。

55. 发明授权

US06623909B2 Polymers, resist compositions and patterning process 有权
标题翻译：聚合物，抗蚀剂组合物和图案化工艺
公开(公告)号：US06623909B2
公开(公告)日：2003-09-23
申请号：US09870745
申请日：2001-06-01
申请人： Jun Hatakeyama , Toshiaki Takahashi , Toshinobu Ishihara , Jun Watanabe , Tohru Kubota , Yoshio Kawai
发明人： Jun Hatakeyama , Toshiaki Takahashi , Toshinobu Ishihara , Jun Watanabe , Tohru Kubota , Yoshio Kawai
IPC分类号： G03F7038
CPC分类号： C08G77/24 , G03F7/0045 , G03F7/0757 , Y10S430/106 , Y10S430/108
摘要： Polymers comprising recurring units of formula (1) are provided wherein R1 is a straight, branched or cyclic divalent C1-20 hydrocarbon group or a bridged cyclic hydrocarbon group, R is hydrogen atom or an acid labile group, 0≦m≦3, 0≦n≦3 and 0≦m+n≦6. Using the polymers, chemical amplification positive resist compositions featuring low absorption of F2 excimer laser light are obtained.
摘要翻译：提供了包含式（1）的重复单元的聚合物，其中R 1是直链，支链或环状二价C 1-20烃基或桥连环烃基，R是氢原子或酸不稳定基团，0≤m <= 3,0 <= n <= 3，0 <= m + n <= 6。使用聚合物，获得具有F2受激准分子激光的低吸收性的化学放大阳性抗蚀剂组合物。

56. 发明授权

US07741015B2 Patterning process and resist composition 有权
标题翻译：图案化过程和抗蚀剂组成
公开(公告)号：US07741015B2
公开(公告)日：2010-06-22
申请号：US12029940
申请日：2008-02-12
申请人： Jun Hatakeyama , Takao Yoshihara , Takeshi Kinsho , Koji Hasegawa , Yoshio Kawai , Katsuya Takemura
发明人： Jun Hatakeyama , Takao Yoshihara , Takeshi Kinsho , Koji Hasegawa , Yoshio Kawai , Katsuya Takemura
IPC分类号： G03F7/004 , G03F7/30
CPC分类号： G03F7/0035 , G03F7/0397 , Y10S430/111 , Y10S430/12 , Y10S430/121 , Y10S430/122 , Y10S430/123
摘要： A pattern is formed by applying a positive resist composition comprising a polymer comprising 7-oxanorbornane ring-bearing recurring units and acid labile group-bearing recurring units and an acid generator onto a substrate to form a resist film, heat treating and exposing the resist film to radiation, heat treating and developing the resist film with a developer, and causing the resist film to crosslink and cure with the aid of acid and/or heat. A second resist pattern is then formed in the space area of the first resist pattern. The double patterning process reduces the pitch between patterns to one half.
摘要翻译：通过在基材上涂布含有包含含有7-氧代降冰片烷环的重复单元和含酸不稳定基团的重复单元的聚合物和酸产生剂的正性抗蚀剂组合物形成抗蚀剂膜，对抗蚀剂膜进行热处理和曝光来形成图案用显影剂进行辐射，热处理和显影抗蚀剂膜，并使抗蚀剂膜在酸和/或热的帮助下交联和固化。然后在第一抗蚀剂图案的空间区域中形成第二抗蚀剂图案。双重图案化工艺将图案之间的间距缩小到一半。

57. 发明授权

US08617800B2 Patterning process 有权
标题翻译：图案化过程
公开(公告)号：US08617800B2
公开(公告)日：2013-12-31
申请号：US12458884
申请日：2009-07-27
申请人： Jun Hatakeyama , Kazuhiro Katayama , Yoshio Kawai
发明人： Jun Hatakeyama , Kazuhiro Katayama , Yoshio Kawai
IPC分类号： G03F7/26
CPC分类号： H01L21/0332 , H01L21/0275 , H01L21/0337
摘要： There is disclosed a patterning process including steps of at least: forming a photoresist film on a substrate; exposing the photoresist film to a high energy beam; developing by using a developer; forming a photoresist pattern; and then forming a spacer on the photoresist pattern sidewall, thereby forming a pattern on the substrate, a patterning process, wherein at least the photoresist pattern having the hardness of 0.4 GPa or more or the Young's modulus of 9.2 GPa or more as a film strength is formed, and a pattern is formed on the substrate by forming a silicon oxide film as the spacer on the photoresist pattern sidewall. There can be provided a patterning process without causing a deformation of a resist pattern and an increase in LWR at the time of forming a silicon oxide film on a photoresist pattern.
摘要翻译：公开了一种图案化工艺，其包括至少在衬底上形成光致抗蚀剂膜的步骤; 将光致抗蚀剂膜暴露于高能量束; 使用开发商开发; 形成光致抗蚀剂图案; 然后在光致抗蚀剂图案侧壁上形成间隔物，从而在基板上形成图案，图案化工艺，其中至少具有0.4GPa或更高的硬度的光刻胶图案或9.2GPa或更大的杨氏模量作为膜强度并且通过在光致抗蚀剂图案侧壁上形成作为间隔物的氧化硅膜在衬底上形成图案。可以提供图案化工艺，而不会在抗蚀剂图案上形成氧化硅膜时引起抗蚀剂图案的变形和增加的LWR。

58. 发明授权

US08367310B2 Pattern forming process and resist-modifying composition 有权
标题翻译：图案形成工艺和抗蚀剂改性组合物
公开(公告)号：US08367310B2
公开(公告)日：2013-02-05
申请号：US12708196
申请日：2010-02-18
申请人： Takeru Watanabe , Masashi Iio , Jun Hatakeyama , Tsunehiro Nishi , Yoshio Kawai
发明人： Takeru Watanabe , Masashi Iio , Jun Hatakeyama , Tsunehiro Nishi , Yoshio Kawai
IPC分类号： G03F7/26
CPC分类号： G03F7/0397 , G03F7/0035 , G03F7/40
摘要： A patterning process includes (1) coating and baking a first positive resist composition to form a first resist film, exposing, post-exposure baking, and alkali developing to form a first resist pattern, (2) applying a resist-modifying composition to the first resist pattern and heating to modify the first resist pattern, (3) coating and baking a second positive resist composition to form a second resist film, exposing, post-exposure baking, and alkali developing to form a second resist pattern. The modified first resist film has a contact angle with pure water of 50°-85°.
摘要翻译：图案化工艺包括（1）涂覆和烘烤第一正性抗蚀剂组合物以形成第一抗蚀剂膜，曝光，曝光后烘烤和碱显影以形成第一抗蚀剂图案，（2）将抗蚀剂改性组合物施加到第一抗蚀剂图案和加热以修饰第一抗蚀剂图案，（3）涂覆和烘烤第二正性抗蚀剂组合物以形成第二抗蚀剂膜，曝光，曝光后烘烤和碱显影以形成第二抗蚀剂图案。改性的第一抗蚀剂膜与纯水的接触角为50°-85°。

59. 发明申请

US20130065183A1 PATTERNING PROCESS AND RESIST COMPOSITION 审中-公开
标题翻译：绘图工艺和耐腐蚀组合物
公开(公告)号：US20130065183A1
公开(公告)日：2013-03-14
申请号：US13606297
申请日：2012-09-07
申请人： Tomohiro Kobayashi , Jun Hatakeyama , Masashi Iio , Yuuki Suka , Koji Hasegawa , Yuji Harada
发明人： Tomohiro Kobayashi , Jun Hatakeyama , Masashi Iio , Yuuki Suka , Koji Hasegawa , Yuji Harada
IPC分类号： G03F7/004 , G03F7/20
CPC分类号： G03F7/0046 , G03F7/0397 , G03F7/11 , G03F7/2041 , G03F7/325
摘要： A resist composition is provided comprising a polymer comprising recurring units having a protected hydroxyl group, a photoacid generator, an organic solvent, and a hydroxyl-free polymeric additive comprising fluorinated recurring units. A negative pattern is formed by coating the resist composition, prebaking to form a resist film, exposing, baking, and developing the exposed film in an organic solvent-based developer to selectively dissolve the unexposed region of resist film.
摘要翻译：提供了抗蚀剂组合物，其包含聚合物，其包含具有被保护的羟基的重复单元，光致酸产生剂，有机溶剂和包含氟化重复单元的无羟基聚合物添加剂。通过涂覆抗蚀剂组合物，预烘烤以形成抗蚀剂膜，在有机溶剂基显影剂中曝光，烘烤和显影曝光的膜以选择性地溶解抗蚀剂膜的未曝光区域，形成负图案。

60. 发明申请

US20120249995A1 RESIST PROTECTIVE FILM MATERIAL AND PATTERN FORMATION METHOD 审中-公开
标题翻译：耐腐蚀膜材料和图案形成方法
公开(公告)号：US20120249995A1
公开(公告)日：2012-10-04
申请号：US13494746
申请日：2012-06-12
申请人： Jun Hatakeyama , Yuji Harada , Takeru Watanabe
发明人： Jun Hatakeyama , Yuji Harada , Takeru Watanabe
IPC分类号： G03B27/32
CPC分类号： G03F7/11 , G03F7/0046 , G03F7/2041
摘要： The invention is a protective film material for immersion lithography that enables desirable immersion lithography, can be removed simultaneously with development of a photoresist layer, and has excellent process adaptability. The invention also includes a method for forming a pattern using the material. More specifically, the invention is a protective film material comprising (i) a blend of a polymer comprising a repeating unit having a fluorine-containing alkyl or alkylene group which contains at least one fluorine atom and an optional alkali soluble repeating unit and a polymer comprising a repeating unit having a fluorine-free alkyl group and an optional alkali soluble repeating unit, or (ii) a polymer comprising a repeating unit having a fluorine-containing alkyl or alkylene group which contains at least one fluorine atom and a repeating unit having a fluorine-free alkyl group and an optional alkali-soluble repeating unit.
摘要翻译：本发明是用于浸没式光刻的保护膜材料，其能够进行希望的浸渍光刻，可以与光致抗蚀剂层的显影同时除去，并且具有优异的工艺适应性。本发明还包括使用该材料形成图案的方法。更具体地说，本发明是一种保护膜材料，其包含（i）包含具有含有至少一个氟原子的含氟烷基或亚烷基的重复单元和任选的碱可溶重复单元的聚合物的共混物和包含具有无氟烷基和任选的碱可溶重复单元的重复单元，或（ii）含有含有至少一个氟原子的含氟烷基或亚烷基的重复单元的聚合物和具有至少一个氟原子的重复单元无氟烷基和任选的碱溶性重复单元。

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