专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

51. 发明授权

US08077509B2 Magnetic memory 有权
标题翻译：磁记忆
公开(公告)号：US08077509B2
公开(公告)日：2011-12-13
申请号：US12320955
申请日：2009-02-10
申请人： Satoshi Yanagi , Yuichi Ohsawa , Shiho Nakamura , Daisuke Saida , Hirofumi Morise
发明人： Satoshi Yanagi , Yuichi Ohsawa , Shiho Nakamura , Daisuke Saida , Hirofumi Morise
IPC分类号： G11C11/15
CPC分类号： G11B25/04 , G11C11/161 , G11C11/1659 , G11C11/1675
摘要： A magnetic memory is provided with a memory cell. The memory cell includes a magnetic recording element, an interconnection to generate a radio-frequency current-induced magnetic field and a ground line. The magnetic recording element is provided with a first magnetic layer whose magnetization direction is substantially fixed, a magnetic recording layer whose magnetization direction is substantially reversed by spin-polarized electrons passing through the magnetic recording layer and a first nonmagnetic layer provided between the first magnetic layer and the magnetic recording layer. The interconnection is provided above the magnetic recording element to generate a radio-frequency current-induced magnetic field acting in a direction substantially perpendicular to a magnetization easy axis of the magnetic recording layer. The ground line is provided on a side opposite to the magnetic recording element with respect to the interconnection.
摘要翻译：磁存储器设置有存储单元。存储单元包括磁记录元件，用于产生射频电流感应磁场和接地线的互连。磁记录元件设置有其磁化方向基本上固定的第一磁性层，其磁化方向基本上由通过磁记录层的自旋极化电子反转的磁记录层和设置在第一磁性层之间的第一非磁性层和磁记录层。互连设置在磁记录元件的上方，以产生沿与磁记录层的易磁化轴基本垂直的方向作用的射频电流感应磁场。接地线相对于互连设置在与磁记录元件相对的一侧上。

52. 发明授权

US07931976B2 Magnetic recording element 有权
标题翻译：磁记录元件
公开(公告)号：US07931976B2
公开(公告)日：2011-04-26
申请号：US12285429
申请日：2008-10-03
申请人： Yuichi Ohsawa , Shiho Nakamura , Hirofumi Morise , Satoshi Yanagi , Daisuke Saida
发明人： Yuichi Ohsawa , Shiho Nakamura , Hirofumi Morise , Satoshi Yanagi , Daisuke Saida
IPC分类号： G11B5/39 , G01B7/14 , G01B7/24
CPC分类号： G11C11/1675 , G11C11/161 , G11C11/1659 , Y10T428/11 , Y10T428/1121 , Y10T428/1143 , Y10T428/115
摘要： A magnetic recording element includes a multilayer having a surface and a pair of electrodes. The multilayer has a first magnetic fixed layer whose magnetization is substantially fixed in a first direction substantially perpendicular to the surface. The multilayer also has a second magnetic fixed layer whose magnetization is substantially fixed in a second direction opposite to the first direction substantially perpendicular to the surface. A third magnetic layer is provided between the first and second magnetic layers. The direction of magnetization of the third ferromagnetic layer is variable. A first intermediate layer is provided between the first and the third magnetic layers. A second intermediate layer is provided between the second and the third magnetic layers. The pair of electrodes is capable of supplying an electric current flowing in a direction substantially perpendicular to the surface to the multilayer. The sectional area taken parallel to the surface at a thickness midpoint of the first magnetic layer is larger than that of the second magnetic layer.
摘要翻译：磁记录元件包括具有表面和一对电极的多层。多层具有第一磁性固定层，其磁化基本上在基本垂直于表面的第一方向固定。多层还具有第二磁性固定层，其磁化基本上固定在与基本上垂直于表面的第一方向相反的第二方向上。第三磁性层设置在第一和第二磁性层之间。第三铁磁层的磁化方向是可变的。第一中间层设置在第一和第三磁性层之间。第二中间层设置在第二和第三磁性层之间。该对电极能够将与表面大致垂直的方向流动的电流供给到多层。在第一磁性层的厚度中点平行于表面截取的截面积大于第二磁性层的截面面积。

53. 发明申请

US20090213638A1 Magnectic memory element and magnetic memory apparatus 有权
标题翻译：磁记忆元件和磁存储装置
公开(公告)号：US20090213638A1
公开(公告)日：2009-08-27
申请号：US12379402
申请日：2009-02-20
申请人： Hirofumi Morise , Shiho Nakamura , Yuichi Ohsawa , Satoshi Yanagi , Daisuke Saida
发明人： Hirofumi Morise , Shiho Nakamura , Yuichi Ohsawa , Satoshi Yanagi , Daisuke Saida
IPC分类号： G11C11/22 , G11C11/14 , G11C11/00 , H01L29/82
CPC分类号： H01L27/228 , G11C11/161 , H01L43/08
摘要： A magnetic memory element is provided with first and second ferromagnetic fixed layers, a ferromagnetic memory layer, nonmagnetic first and second intermediate layers. The memory layer is disposed between the first and second fixed layers, and has a variable magnetization direction. In order to cancel asymmetry of a write-in current of the element, the element is provided so that the memory layer receives a larger perpendicular stray field from the first fixed layer than from the second fixed layer, and then a magnetization direction of a portion of the memory layer being nearest to the first intermediate layer and the magnetization direction of the first fixed layer are antiparallel to each other whenever a magnetization direction of a portion of the memory layer being nearest to the second intermediate layer and the magnetization direction of the second fixed layer are parallel to each other, and vice versa.
摘要翻译：磁存储元件设置有第一和第二铁磁固定层，铁磁存储层，非磁性第一和第二中间层。存储层设置在第一和第二固定层之间，具有可变的磁化方向。为了消除元件的写入电流的不对称性，提供元件，使得存储层从第一固定层接收比来自第二固定层的更大的垂直杂散场，然后接收部分的磁化方向所述存储层的最靠近所述第一中间层的磁化方向和所述第一固定层的磁化方向在所述存储层的一部分的磁化方向最接近所述第二中间层的磁化方向和所述第二中间层的磁化方向相互反平行时，固定层彼此平行，反之亦然。

54. 发明申请

US20080013222A1 MAGNETORESISTANCE EFFECT ELEMENT, ITS MANUFACTURING METHOD, MAGNETIC REPRODUCING ELEMENT AND MAGNETIC MEMORY 有权
标题翻译：磁阻效应元件及其制造方法，磁复制元件和磁记忆
公开(公告)号：US20080013222A1
公开(公告)日：2008-01-17
申请号：US11773294
申请日：2007-07-03
申请人： Shiho OKUNO , Yuichi Ohsawa , Shigeru Haneda , Yuzo Kamiguchi , Tatsuya Kishi
发明人： Shiho OKUNO , Yuichi Ohsawa , Shigeru Haneda , Yuzo Kamiguchi , Tatsuya Kishi
IPC分类号： G11B5/39
CPC分类号： H01L43/08 , B32B7/02 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/39 , G11B5/3929 , G11B2005/3996 , G11C11/16 , H01L43/12 , Y10T29/49043 , Y10T29/49044 , Y10T428/1114 , Y10T428/1143 , Y10T428/12465 , Y10T428/12931 , Y10T428/12986 , Y10T428/325
摘要： A method of manufacturing a magnetoresistance effect element includes forming an insulating layer on a first ferromagnetic layer, forming an aperture reaching the first ferromagnetic layer by thrusting a needle from the top surface of the insulating layer, and depositing a ferromagnetic material to form a second ferromagnetic layer overlying the insulating layer which buries the aperture. The aperture can have an opening width not larger than 20 nm. A current flowing between the first ferromagnetic layer and the needle can be monitored, and thrusting of the needle an be interrupted when the current reaches a predetermined value.
摘要翻译：一种制造磁阻效应元件的方法包括：在第一铁磁层上形成绝缘层，通过从绝缘层的顶表面推出针而形成到达第一铁磁层的孔，以及沉积铁磁材料以形成第二铁磁体覆盖掩埋孔的绝缘层的层。孔径可以具有不大于20nm的开口宽度。可以监测在第一铁磁层和针之间流动的电流，并且当电流达到预定值时针头的推压被中断。

55. 发明授权

US07265950B2 Magnetoresistance effect element, its manufacturing method, magnetic reproducing element and magnetic memory 有权
标题翻译：磁阻效应元件，其制造方法，磁再现元件和磁存储器
公开(公告)号：US07265950B2
公开(公告)日：2007-09-04
申请号：US10935578
申请日：2004-09-08
申请人： Shiho Okuno , Yuichi Ohsawa , Shigeru Haneda , Yuzo Kamiguchi , Tatsuya Kishi
发明人： Shiho Okuno , Yuichi Ohsawa , Shigeru Haneda , Yuzo Kamiguchi , Tatsuya Kishi
IPC分类号： G11B5/39 , G11B5/127
CPC分类号： H01L43/08 , B32B7/02 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/39 , G11B5/3929 , G11B2005/3996 , G11C11/16 , H01L43/12 , Y10T29/49043 , Y10T29/49044 , Y10T428/1114 , Y10T428/1143 , Y10T428/12465 , Y10T428/12931 , Y10T428/12986 , Y10T428/325
摘要： A magnetoresistance effect element includes a first ferromagnetic layer (1), insulating layer (3) overlying the first ferromagnetic layer, and second ferromagnetic layer (2) overlying the insulating layer. The insulating layer has formed a through hole (A) having an opening width not larger than 20 nm, and the first and second ferromagnetic layers are connected to each other via the through hole.
摘要翻译：磁阻效应元件包括第一铁磁层（1），覆盖第一铁磁层的绝缘层（3）和覆盖绝缘层的第二铁磁层（2）。绝缘层形成了具有不大于20nm的开口宽度的通孔（A），并且第一和第二铁磁层经由通孔相互连接。

56. 发明授权

US07126848B2 Magnetic cell and magnetic memory 有权
标题翻译：磁性细胞和磁记忆
公开(公告)号：US07126848B2
公开(公告)日：2006-10-24
申请号：US11213865
申请日：2005-08-30
申请人： Shiho Nakamura , Shigeru Haneda , Yuichi Ohsawa
发明人： Shiho Nakamura , Shigeru Haneda , Yuichi Ohsawa
IPC分类号： G11C11/14
CPC分类号： H01L43/08 , G11C11/15 , G11C11/16 , G11C11/5607 , H01L27/224 , H01L27/228
摘要： A magnetic cell includes a first magnetically fixed part including a laminated structure where a first ferromagnetic layer, a nonmagnetic layer and a second ferromagnetic layer are laminated, a second magnetically fixed part including a third ferromagnetic layer, a fourth ferromagnetic layer provided between the first and the second magnetically fixed parts, a first intermediate layer provided between the first magnetically fixed part and the fourth ferromagnetic layer, and a second intermediate layer provided between the second magnetically fixed part and the fourth ferromagnetic layer, a direction of magnetization of the fourth ferromagnetic layer being determined under an influence of spin-polarized electrons upon the fourth ferromagnetic layer by passing a current between the first and the second magnetically fixed parts.
摘要翻译：磁性电池包括第一磁性固定部分，其包括层压结构，其中第一铁磁层，非磁性层和第二铁磁层被层压，包括第三铁磁层的第二磁性固定部分，设置在第一和第二铁磁层之间的第四铁磁层第二磁性固定部分，设置在第一磁性固定部分和第四铁磁性层之间的第一中间层和设置在第二磁性固定部分和第四铁磁性层之间的第二中间层，第四铁磁性层的磁化方向通过在第一和第二磁性固定部分之间通过电流，在自旋极化电子对第四铁磁层的影响下确定。

57. 发明授权

US07120049B2 Magnetic cell and magnetic memory 有权
标题翻译：磁性细胞和磁记忆
公开(公告)号：US07120049B2
公开(公告)日：2006-10-10
申请号：US11405418
申请日：2006-04-18
申请人： Shiho Nakamura , Shigeru Haneda , Yuichi Ohsawa
发明人： Shiho Nakamura , Shigeru Haneda , Yuichi Ohsawa
IPC分类号： G11C11/14
CPC分类号： H01L43/08 , G11C11/15 , G11C11/16 , G11C11/5607 , H01L27/224 , H01L27/228
摘要： A magnetic cell includes a first ferromagnetic layer whose magnetization is substantially fixed in a first direction; a second ferromagnetic layer whose magnetization is substantially fixed in a second direction opposite to the first direction; a third ferromagnetic layer provided between the first and the second ferromagnetic layers, a direction of magnetization of the third ferromagnetic layer being variable; a first intermediate layer provided between the first and the third ferromagnetic layers; and a second intermediate layer provided between the second and the third ferromagnetic layers. The direction of magnetization of the third ferromagnetic layer can be determined under an influence of spin-polarized electrons upon the third ferromagnetic layer by passing a current between the first and the second ferromagnetic layers.
摘要翻译：磁性单元包括第一铁磁层，其磁化基本上固定在第一方向上; 第二铁磁层，其磁化基本上固定在与第一方向相反的第二方向上; 设置在所述第一和第二铁磁层之间的第三铁磁层，所述第三铁磁层的磁化方向是可变的; 设置在第一和第三铁磁层之间的第一中间层; 以及设置在第二和第三铁磁层之间的第二中间层。可以通过在第一和第二铁磁层之间通过电流，在自旋极化电子对第三铁磁层的影响下确定第三铁磁层的磁化方向。

58. 发明申请

US20050042478A1 Magnetoresistance effect element, its manufacturing method, magnetic reproducing element and magnetic memory 有权
标题翻译：磁阻效应元件，其制造方法，磁再现元件和磁存储器
公开(公告)号：US20050042478A1
公开(公告)日：2005-02-24
申请号：US10935578
申请日：2004-09-08
申请人： Shiho Okuno , Yuichi Ohsawa , Shigeru Haneda , Yuzo Kamiguchi , Tatsuya Kishi
发明人： Shiho Okuno , Yuichi Ohsawa , Shigeru Haneda , Yuzo Kamiguchi , Tatsuya Kishi
IPC分类号： B32B7/02 , G11B5/39 , G11B5/64
CPC分类号： H01L43/08 , B32B7/02 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/39 , G11B5/3929 , G11B2005/3996 , G11C11/16 , H01L43/12 , Y10T29/49043 , Y10T29/49044 , Y10T428/1114 , Y10T428/1143 , Y10T428/12465 , Y10T428/12931 , Y10T428/12986 , Y10T428/325
摘要： A magnetoresistance effect element includes a first ferromagnetic layer (1), insulating layer (3) overlying the first ferromagnetic layer, and second ferromagnetic layer (2) overlying the insulating layer. The insulating layer has formed a through hole (A) having an opening width not larger than 20 nm, and the first and second ferromagnetic layers are connected to each other via the through hole.
摘要翻译：磁阻效应元件包括第一铁磁层（1），覆盖第一铁磁层的绝缘层（3）和覆盖绝缘层的第二铁磁层（2）。绝缘层形成了具有不大于20nm的开口宽度的通孔（A），并且第一和第二铁磁层经由通孔相互连接。

59. 发明授权

US09166065B2 Magnetoresistive effect element, magnetic memory, and magnetoresistive effect element manufacturing method 有权
标题翻译：磁阻效应元件，磁存储器和磁阻效应元件制造方法
公开(公告)号：US09166065B2
公开(公告)日：2015-10-20
申请号：US13419011
申请日：2012-03-13
申请人： Yuichi Ohsawa , Tadaomi Daibou , Yushi Kato , Eiji Kitagawa , Saori Kashiwada , Minoru Amano , Junichi Ito
发明人： Yuichi Ohsawa , Tadaomi Daibou , Yushi Kato , Eiji Kitagawa , Saori Kashiwada , Minoru Amano , Junichi Ito
IPC分类号： H01L29/82 , H01L43/08 , H01L43/10 , H01L27/22 , H01F10/12 , H01F10/32 , H01F41/30 , B82Y40/00 , G11C11/16
CPC分类号： H01L29/82 , B82Y40/00 , G11C11/161 , H01F10/126 , H01F10/3286 , H01F41/303 , H01L27/228 , H01L43/08 , H01L43/10
摘要： According to one embodiment, a magnetoresistive effect element includes a first magnetic film having magnetic anisotropy and an invariable magnetization direction in a direction perpendicular to a film plane, a second magnetic film having magnetic anisotropy and a variable magnetization direction in the direction perpendicular to the film plane, and a nonmagnetic film between the first magnetic film and the second magnetic film. At least one of the first and second magnetic films includes a first magnetic layer. The first magnetic layer includes a rare earth metal, a transition metal, and boron.
摘要翻译：根据一个实施例，磁阻效应元件包括在垂直于膜平面的方向上具有磁各向异性和不变磁化方向的第一磁性膜，在垂直于膜的方向上具有磁各向异性和可变磁化方向的第二磁性膜平面和第一磁性膜与第二磁性膜之间的非磁性膜。第一和第二磁性膜中的至少一个包括第一磁性层。第一磁性层包括稀土金属，过渡金属和硼。

60. 发明授权

US08981507B2 Method for manufacturing nonvolatile memory device 有权
标题翻译：非易失性存储器件的制造方法
公开(公告)号：US08981507B2
公开(公告)日：2015-03-17
申请号：US13534673
申请日：2012-06-27
申请人： Shigeki Takahashi , Kyoichi Suguro , Junichi Ito , Yuichi Ohsawa , Hiroaki Yoda
发明人： Shigeki Takahashi , Kyoichi Suguro , Junichi Ito , Yuichi Ohsawa , Hiroaki Yoda
IPC分类号： H01L43/12
CPC分类号： H01L43/12
摘要： According to one embodiment, a method for manufacturing a nonvolatile memory device including a plurality of memory cells is disclosed. Each of the plurality of memory cells includes a base layer including a first electrode, a magnetic tunnel junction device provided on the base layer, and a second electrode provided on the magnetic tunnel junction device. The magnetic tunnel junction device includes a first magnetic layer, a tunneling barrier layer provided on the first magnetic layer, and a second magnetic layer provided on the tunneling barrier layer. The method can include etching a portion of the second magnetic layer and a portion of the first magnetic layer by irradiating gas clusters onto a portion of a surface of the second magnetic layer or a portion of a surface of the first magnetic layer.
摘要翻译：根据一个实施例，公开了一种用于制造包括多个存储单元的非易失性存储器件的方法。多个存储单元中的每一个包括基底层，其包括第一电极，设置在基底层上的磁性隧道结器件和设置在磁性隧道结装置上的第二电极。磁隧道结装置包括第一磁性层，设置在第一磁性层上的隧道势垒层，以及设置在隧道势垒层上的第二磁性层。该方法可以包括通过将气体簇照射到第二磁性层的表面的一部分或第一磁性层的表面的一部分上来蚀刻第二磁性层的一部分和第一磁性层的一部分。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式