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51. 发明授权

US07123443B2 Self-aligned void filling for mushroomed plating 失效
标题翻译：自对准空隙填充为蘑菇电镀
公开(公告)号：US07123443B2
公开(公告)日：2006-10-17
申请号：US10617322
申请日：2003-07-09
申请人： Thomas Edward Dinan , Richard Hsiao , John I. Kim , Ashok Lahiri , Clinton David Snyder
发明人： Thomas Edward Dinan , Richard Hsiao , John I. Kim , Ashok Lahiri , Clinton David Snyder
IPC分类号： G11B5/17
CPC分类号： C25D5/022 , G11B5/127 , G11B5/3163 , Y10T29/49032 , Y10T29/49155 , Y10T29/49156
摘要： The present invention includes an overplated component which includes an enlarged mushroom head having outer portions which overhang a hard baked resist layer. The device is ultimately encapsulated such that no voids and/or redeposition problems exist under the overhang due to the presence of the hard baked resist. While not intended to be limiting in any manner, a device of the present invention is a thin film magnetic head wherein the yoke portion of a magnetic pole is formed utilizing the mushroom plating techniques of the present invention. Another mushroom plated component found in many devices is a mushroom plated electrical interconnecting stud that is formed utilizing the process steps of the present invention.
摘要翻译：本发明包括一个外延部件，它包括一个扩大的蘑菇头部，其具有伸出硬烘烤抗蚀剂层的外部部分。该装置最终被包封，使得由于硬烘烤抗蚀剂的存在而在悬垂下不存在空隙和/或再沉积问题。虽然不是以任何方式限制，但是本发明的装置是薄膜磁头，其中利用本发明的蘑菇电镀技术形成磁极的磁轭部分。在许多装置中发现的另一种蘑菇电镀组件是利用本发明的方法步骤形成的蘑菇电镀电互连柱。

52. 发明申请

US20050157432A1 Magnetic head having short pole yoke length and method for fabrication thereof 失效
标题翻译：具有短极轭长度的磁头及其制造方法
公开(公告)号：US20050157432A1
公开(公告)日：2005-07-21
申请号：US10758428
申请日：2004-01-16
申请人： Richard Hsiao , Edward Lee
发明人： Richard Hsiao , Edward Lee
IPC分类号： G11B5/187 , G11B5/31
CPC分类号： G11B5/3133 , G11B5/3163 , Y10T29/49021 , Y10T29/49032 , Y10T29/49043 , Y10T29/4906 , Y10T29/49062
摘要： The induction coil of the magnetic head of the present invention is fabricated in a patterned electrical insulation material, preferably utilizing reactive ion etch (RIE) techniques. The electrical insulation material is particularly patterned such that it is formed away from the ABS surface and in the location of the induction coil. A fill layer is deposited around the patterned electrical insulation material layer, such that the fill layer is disposed at the ABS surface. In a preferred embodiment, the patterned electrical insulation material is initially fabricated from hard baked photoresist and subsequent to the deposition of the fill layer the hard baked photoresist material is removed and replaced by SiO2. The SiO2 is thereby located away from the ABS surface and the induction coil is subsequently fabricated within the SiO2 material.
摘要翻译：本发明的磁头的感应线圈以图案化的电绝缘材料制成，优选利用反应离子蚀刻（RIE）技术。电绝缘材料被特别图案化，使得其形成为远离ABS表面并且在感应线圈的位置。填充层沉积在图案化的电绝缘材料层周围，使得填充层设置在ABS表面。在优选实施例中，图案化电绝缘材料最初由硬烘焙光致抗蚀剂制造，并且在沉积填充层之后，去除硬烘烤的光致抗蚀剂材料并用SiO 2替代。因此，SiO 2 2位于离开ABS表面的位置，随后在SiO 2材料内制造感应线圈。

53. 发明授权

US06785101B2 Overlaid lead giant magnetoresistive head with side reading reduction 失效
标题翻译：覆盖铅巨磁阻头，侧读数减少
公开(公告)号：US06785101B2
公开(公告)日：2004-08-31
申请号：US09905522
申请日：2001-07-12
申请人： Patrick Rush Webb , Mustafa Pinarbasi , Richard Hsiao , Hardayal Singh Gill
发明人： Patrick Rush Webb , Mustafa Pinarbasi , Richard Hsiao , Hardayal Singh Gill
IPC分类号： G11B533
CPC分类号： B82Y10/00 , G11B5/3903 , G11B5/398
摘要： The first and second side surfaces of either a bottom spin valve sensor or a top spin valve sensor are notched so as to enable a reduction in the magnetoresistive coefficient of side portions of the sensor beyond the track width region thereby minimizing side reading by the sensor. The first and second notches of the spin valve sensor are then filled with layers in various embodiments of the invention to complete the spin valve sensor.
摘要翻译：底部自旋阀传感器或顶部自旋阀传感器的第一和第二侧表面被切口，以便能够将传感器的侧部的磁阻系数降低到轨道宽度区域之外，从而最小化传感器的侧面读数。然后，在本发明的各种实施例中，自旋阀传感器的第一和第二缺口填充层以完成自旋阀传感器。

54. 发明授权

US06470566B2 ESD protection during GMR head fabrication 失效
标题翻译： GMR头制造期间的ESD保护
公开(公告)号：US06470566B2
公开(公告)日：2002-10-29
申请号：US09754139
申请日：2001-01-03
申请人： Richard Hsiao , Edward Hin Pong Lee , Timothy J. Moran , Joseph Francis Smyth , Howard Gordon Zolla
发明人： Richard Hsiao , Edward Hin Pong Lee , Timothy J. Moran , Joseph Francis Smyth , Howard Gordon Zolla
IPC分类号： G11B5127
CPC分类号： G11B5/3903 , G11B5/3163 , G11B5/3173 , G11B5/40 , Y10T29/49032 , Y10T29/49043
摘要： To protect the MR read head element from ESD damage during wafer level manufacturing, a lead from the MR element is electrically connected to one or both of the read head element shields during manufacturing. In a preferred embodiment of the present invention, the electrical connection is fabricated in the kerf area between adjacent magnetic heads as they are fabricated upon a wafer substrate. Thereafter, when the magnetic heads are separated by saw cutting through the kerf areas, the electrical connections are thereby removed, such that the MR element electrical leads and the shields are electrically isolated. In an alternative embodiment, one or more of the shields, as well as the MR element leads can also be electrically connected to the substrate upon which the magnetic head is fabricated. In further alternative embodiments, the electrical connection between one or more of the shields and the MR element electrical lead can be fabricated within the magnetic head area, rather than in the kerf area, and a suitable resistance is fabricated into the interconnecting circuit. In this embodiment, the electrical interconnection between the MR element electrical lead and one or more of the shields has a pre-designed electrical resistance and it remains in the magnetic head following fabrication.
摘要翻译：为了在晶片级制造期间保护MR读取头元件免受ESD损坏，来自MR元件的引线在制造期间电连接到读头元件屏蔽中的一个或两个。在本发明的优选实施例中，当在晶片衬底上制造时，在相邻磁头之间的切口区域中制造电连接。此后，当通过锯切通过切口区域分离磁头时，由此去除电连接，使得MR元件电引线和屏蔽件电隔离。在替代实施例中，一个或多个屏蔽件以及MR元件引线也可以电连接到其上制造磁头的基板。在另外的替代实施例中，一个或多个屏蔽件和MR元件电引线之间的电连接可以制造在磁头区域内，而不是在切口区域中，并且在互连电路中制造合适的电阻。在该实施例中，MR元件电引线与一个或多个屏蔽之间的电互连具有预先设计的电阻，并且在制造之后它保持在磁头中。

55. 发明授权

US6132813A High density plasma surface modification for improving antiwetting properties 失效
标题翻译：高密度等离子体表面改性以改善抗湿润性能
公开(公告)号：US6132813A
公开(公告)日：2000-10-17
申请号：US989051
申请日：1997-12-11
申请人： Pei C. Chen , Richard Hsiao , Son Van Nguyen , Andrew Chiuyan Ting
发明人： Pei C. Chen , Richard Hsiao , Son Van Nguyen , Andrew Chiuyan Ting
IPC分类号： B05D7/24 , G11B23/50 , B05D5/12
CPC分类号： B05D1/62 , G11B23/505 , G11B23/507
摘要： A method for modifying a substrate surface, including the step of applying a high density plasma to the substrate surface in the presence of a hydrofluorocarbon gas and a carrier gas to form an antiwetting layer on the substrate surface. Optionally, the method including a cleaning step of contacting the slider surface with a carrier gas for a period of time effective to clean the surface.
摘要翻译：一种用于改变基板表面的方法，包括在存在氢氟烃气体和载气的情况下将高密度等离子体施加到基板表面的步骤，以在基板表面上形成反渗透层。可选地，所述方法包括清洁步骤，使滑动器表面与载气接触一段时间以有效地清洁表面。

56. 发明授权

US5893981A Method of making stabilized MR sensor and flux guide joined by contiguous junction 失效
标题翻译：制造稳定的MR传感器和通过连接接头连接的助焊剂的方法
公开(公告)号：US5893981A
公开(公告)日：1999-04-13
申请号：US44358
申请日：1998-03-19
申请人： Moris Musa Dovek , Robert E. Fontana , Richard Hsiao , Mohamad Towfik Krounbi , Hugo Alberto Emilio Santini , Virgil Simon Speriosu
发明人： Moris Musa Dovek , Robert E. Fontana , Richard Hsiao , Mohamad Towfik Krounbi , Hugo Alberto Emilio Santini , Virgil Simon Speriosu
IPC分类号： G01R33/09 , G03F7/00 , G11B5/31 , G11B5/39 , B44C1/22
CPC分类号： G11B5/3916 , G01R33/09 , G03F7/00 , G11B5/3903 , G11B5/3919 , G11B5/3932 , G11B5/3163
摘要： The back end of an MR sensor and a flux guide are joined by a contiguous self-aligned junction so that a predictable overlap of the flux guide on the back end of the MR sensor can be achieved for optimizing signal flux density in the MR sensor. Lead/longitudinal bias layers for the MR sensor are also joined by a contiguous self-aligned junction to the flux guide for stabilizing the flux guide. By employing a single lift off resist mask the MR sensor and the lead/longitudinal bias layers can be patterned followed by deposition of the flux guide. The flux guide is a bilayer of an insulation material layer and a flux guide material layer. The insulation material layer is sandwiched between the MR sensor and the flux guide material layer and between the lead/longitudinal bias layers and the flux guide material layer. A heat guide or combined flux guide and heat guide may be substituted for the aforementioned flux guide.
摘要翻译： MR传感器和磁通引导件的后端通过连续的自对准结连接，从而可以实现MR传感器后端的磁通引导件的可预测重叠，以优化MR传感器中的信号通量密度。用于MR传感器的引线/纵向偏置层也通过连接的自对准结连接到通量引导件，用于稳定通量引导件。通过使用单个剥离抗蚀剂掩模，MR传感器和引导/纵向偏置层可以被图案化，然后沉积助焊剂引导件。助焊剂是绝缘材料层和助焊剂引导材料层的双层。绝缘材料层被夹在MR传感器和磁通引导材料层之间以及引导/纵向偏置层与通量引导材料层之间。导热或组合的磁通引导件和导热件可以代替上述的磁通引导件。

57. 发明授权

US5421507A Au-Sn transient liquid bonding in high performance laminates 失效
标题翻译： Au-Sn瞬态液体粘合在高性能层压板中
公开(公告)号：US5421507A
公开(公告)日：1995-06-06
申请号：US134994
申请日：1993-10-12
申请人： Charles R. Davis , Richard Hsiao , James R. Loomis , Jae M. Park , Jonathan D. Reid
发明人： Charles R. Davis , Richard Hsiao , James R. Loomis , Jae M. Park , Jonathan D. Reid
IPC分类号： H01R43/02 , B23K35/00 , B23K35/30 , H01R4/02 , H05K3/28 , H05K3/32 , H05K3/40 , H05K3/46 , B23K1/00
CPC分类号： B23K35/3013 , B23K35/001 , H01R4/02 , H05K3/4614 , H01L2924/0132 , H05K2201/0305 , H05K3/28 , H05K3/328 , H05K3/4038 , Y10S428/901 , Y10T156/1056 , Y10T29/49126
摘要： A method is disclosed of simultaneously laminating circuitized dielectric layers to form a multilayer high performance circuit board and making interlevel electrical connections. The method selects two elements which will form a eutectic at one low temperature and will solidify to form an alloy which will only remelt at a second temperature higher than any required by any subsequent lamination. The joint is made using a transient liquid bonding technique and sufficient Au and Sn to result in a Au--Sn20wt% eutectic at the low temperature. Once solidified, the alloy formed remains solid throughout subsequent laminations. As a result, a composite, mulilayer, high performance circuit board is produced, electrically joined at selected lands by the solid alloy.
摘要翻译：公开了一种同时层压电路化电介质层以形成多层高性能电路板并制造层间电连接的方法。该方法选择将在一个低温下形成共晶体的两种元素，并将固化形成合金，该合金将仅在任何后续层压所要求的第二温度下再熔化。使用瞬态液体粘合技术和足够的Au和Sn制成接头，以在低温下产生Au-Sn20wt％共晶。一旦固化，形成的合金在随后的叠片中保持固体。结果，制造复合的，多层的高性能电路板，通过固体合金在选定的焊盘处电连接。

58. 发明申请

US20080026254A1 PERPENDICULAR POLE STRUCTURE AND METHOD OF FABRICATING THE SAME 有权
标题翻译：圆锥形结构及其制造方法
公开(公告)号：US20080026254A1
公开(公告)日：2008-01-31
申请号：US11836732
申请日：2007-08-09
申请人： Richard Hsiao , Wipul Jayasekara , Jeffrey Lille
发明人： Richard Hsiao , Wipul Jayasekara , Jeffrey Lille
IPC分类号： G11B5/33
CPC分类号： G11B5/1278 , G11B5/3116 , G11B5/3163 , Y10T29/49021 , Y10T29/49032 , Y10T29/49043 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052 , Y10T428/11 , Y10T428/1157
摘要： A magnetic structure, such as a pole tip, and method for forming the same includes forming a pole tip layer of magnetic material. A layer of polyimide precursor material is added above the pole tip layer and cured. A silicon-containing resist layer is added above the layer of polyimide precursor material and patterned. The resist layer is exposed to oxygen plasma for converting the resist into a glass-like material. Exposed portions of the cured polyimide precursor material are removed for exposing portions of the pole tip layer. The exposed portions of the pole tip layer are removed for forming a pole tip. Chemical mechanical polishing (CMP) can then be performed to remove any unwanted material remaining above the pole tip.
摘要翻译：诸如极尖的磁性结构及其形成方法包括形成磁性材料的磁极末端层。将一层聚酰亚胺前体材料添加到极尖层上方并固化。将含硅抗蚀剂层添加到聚酰亚胺前体材料层上方并图案化。将抗蚀剂层暴露于氧等离子体以将抗蚀剂转化为玻璃状材料。去除固化的聚酰亚胺前体材料的暴露部分以暴露极尖层的部分。去除极尖端部的暴露部分以形成极尖。然后可以进行化学机械抛光（CMP）以除去残留在极尖顶部的任何不需要的材料。

59. 发明授权

US07281316B2 Perpendicular pole structure and method of fabricating the same 失效
标题翻译：垂直极结构及其制造方法
公开(公告)号：US07281316B2
公开(公告)日：2007-10-16
申请号：US10883336
申请日：2004-06-30
申请人： Richard Hsiao , Wipul Pemsiri Jayasekara , Jeffrey S. Lille
发明人： Richard Hsiao , Wipul Pemsiri Jayasekara , Jeffrey S. Lille
IPC分类号： G11B5/187 , B44C1/22
CPC分类号： G11B5/1278 , G11B5/3116 , G11B5/3163 , Y10T29/49021 , Y10T29/49032 , Y10T29/49043 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052 , Y10T428/11 , Y10T428/1157
摘要： A magnetic structure, such as a pole tip, and method for forming the same includes forming a pole tip layer of magnetic material. A layer of polyimide precursor material is added above the pole tip layer and cured. A silicon-containing resist layer is added above the layer of polyimide precursor material and patterned. The resist layer is exposed to oxygen plasma for converting the resist into a glass-like material. Exposed portions of the cured polyimide precursor material are removed for exposing portions of the pole tip layer. The exposed portions of the pole tip layer are removed for forming a pole tip. Chemical mechanical polishing (CMP) can then be performed to remove any unwanted material remaining above the pole tip.
摘要翻译：诸如极尖的磁性结构及其形成方法包括形成磁性材料的磁极末端层。将一层聚酰亚胺前体材料添加到极尖层上方并固化。将含硅抗蚀剂层添加到聚酰亚胺前体材料层上方并图案化。将抗蚀剂层暴露于氧等离子体以将抗蚀剂转化为玻璃状材料。去除固化的聚酰亚胺前体材料的暴露部分以暴露极尖层的部分。去除极尖端部的暴露部分以形成极尖。然后可以进行化学机械抛光（CMP）以除去残留在极尖顶部的任何不需要的材料。

60. 发明申请

US20070169337A1 METHOD FOR CREATING WRITE ELEMENT HAVING HIGH MAGNETIC MOMENT CO-FE-O-N FILM WITH SOFT MAGNETIC PROPERTIES 失效
标题翻译：创建具有软磁性能的高磁性CO-FE-O-N薄膜的写元件的方法
公开(公告)号：US20070169337A1
公开(公告)日：2007-07-26
申请号：US11688168
申请日：2007-03-19
申请人： Brian Brusca , Joel Forrest , Richard Hsiao , James Jarratt , Brian York
发明人： Brian Brusca , Joel Forrest , Richard Hsiao , James Jarratt , Brian York
IPC分类号： G11B5/127 , C23C14/00
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3109 , G11B5/312 , G11B5/313 , G11B5/3153 , G11B5/3163 , G11B5/3967 , G11B2005/3996 , H01F10/16 , Y10T29/49032 , Y10T29/49039 , Y10T29/49043 , Y10T29/49044 , Y10T428/115 , Y10T428/32
摘要： A method for creating a write element of a magnetic head according to one embodiment includes forming a first pole pedestal; forming a write gap layer above the first pole pedestal; forming a second pole pedestal above the write gap layer; and forming at least one of: a cap layer of CoFeON between the first pole pedestal and the write gap, and a seed layer of CoFeON between the write gap layer and the second pole pedestal. Note that other layers may be interspersed between those set forth here.
摘要翻译：根据一个实施例的用于产生磁头的写入元件的方法包括：形成第一极基座; 在所述第一极基座上形成写间隙层; 在所述写间隙层上方形成第二极基座; 以及在所述第一极基座和所述写间隙之间形成CoFeON的覆盖层和所述写间隙层和所述第二极基座之间的CoFeON晶种层中的至少一个。注意，其他层可以散布在这里列出的层之间。

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