会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 3. 发明授权
    • Perpendicular pole having and adjacent non-magnetic CMP resistant structure
    • 垂直极具有和相邻的非磁性CMP抗磨结构
    • US07251103B2
    • 2007-07-31
    • US10882507
    • 2004-06-30
    • Richard HsiaoWipul Pemsiri JayasekaraJeffrey S. Lille
    • Richard HsiaoWipul Pemsiri JayasekaraJeffrey S. Lille
    • G11B5/147
    • G11B5/1278
    • A magnetic structure, such as a pole tip, and method for forming the same includes forming a pole tip layer of magnetic material. A layer of polyimide precursor material is added above the pole tip layer and cured. A silicon-containing resist layer is added above the layer of polyimide precursor material and patterned. The resist layer is exposed to oxygen plasma for converting the resist into a glass-like material. Exposed portions of the cured polyimide precursor material are removed for exposing portions of the pole tip layer. The exposed portions of the pole tip layer are removed for forming a pole tip. Chemical mechanical polishing (CMP) can then be performed to remove any unwanted material remaining above the pole tip.
    • 诸如极尖的磁性结构及其形成方法包括形成磁性材料的磁极末端层。 将一层聚酰亚胺前体材料添加到极尖层上方并固化。 将含硅抗蚀剂层添加到聚酰亚胺前体材料层上方并图案化。 将抗蚀剂层暴露于氧等离子体以将抗蚀剂转化为玻璃状材料。 去除固化的聚酰亚胺前体材料的暴露部分以暴露极尖层的部分。 去除极尖端部的暴露部分以形成极尖。 然后可以进行化学机械抛光(CMP)以除去残留在极尖顶部的任何不需要的材料。
    • 4. 发明授权
    • Methods of making magnetic heads with improved contiguous junctions
    • 制造具有改进的连续结的磁头的方法
    • US06996894B2
    • 2006-02-14
    • US10109110
    • 2002-03-28
    • Richard HsiaoWipul Pemsiri JayasekaraMustafa PinarbasiPatrick Rush Webb
    • Richard HsiaoWipul Pemsiri JayasekaraMustafa PinarbasiPatrick Rush Webb
    • G11B5/127B44C1/22
    • B82Y10/00G11B5/3116G11B5/313G11B5/3163G11B5/3903Y10T29/49041Y10T29/49043Y10T29/49046Y10T29/49048Y10T29/49052
    • Methods of making a read head with improved contiguous junctions are described. After sensor layer materials are deposited over a substrate, a lift-off mask is formed over the sensor layer materials in a central region which is surrounded by end regions. Ion milling is performed with use of the lift-off mask such that the sensor layer materials in the end regions are removed and those in the central region remain to form a read sensor. A high-angle ion mill (e.g. between 45–80 degrees) is then performed to remove redeposited material from side walls of the lift-off mask. Next, a reactive ion etch (RIE) is used to reduce the thickness and the width of the lift-off mask and to remove capping layer materials from the top edges of the read sensor. With the reduced-size lift-off mask in place, hard bias and lead layers are deposited adjacent the read sensor as well as over the mask. The reduced-size lift-off mask allows the amount of hard bias to be increased in the contiguous junction region, and the edges of the leads to be deposited more closely over the top edges of the read sensor. Advantageously, the stability of the sensor is enhanced and the transfer curve is improved using a method which can be controlled independently from the initial mask structure and ion milling process. No critical alignments or multiple photoresist processes are necessary.
    • 描述了制造具有改进的连续结的读取头的方法。 在传感器层材料沉积在衬底上之后,在由端部区域包围的中心区域中的传感器层材料上形成剥离掩模。 使用剥离掩模进行离子铣削,使得端部区域中的传感器层材料被去除,并且在中心区域中的传感器层材料保持形成读取传感器。 然后执行高角度离子磨(例如在45-80度之间)以从剥离掩模的侧壁去除再沉积的材料。 接下来,使用反应离子蚀刻(RIE)来减小剥离掩模的厚度和宽度,并从读取传感器的顶部边缘去除封盖层材料。 随着尺寸减小的剥离掩模就位,硬读取传感器以及掩模附近沉积了硬偏置和引线层。 缩小尺寸的剥离掩模允许在连续接合区域中增加硬偏置的量,并且引线的边缘更紧密地沉积在读取传感器的顶部边缘上。 有利地,增强了传感器的稳定性,并且使用可以独立于初始掩模结构和离子铣削过程进行控制的方法来提高传递曲线。 不需要临界对准或多个光刻胶工艺。
    • 7. 发明授权
    • Magnetic pole tip for perpendicular magnetic recording
    • 磁极尖用于垂直磁记录
    • US07139153B2
    • 2006-11-21
    • US10785236
    • 2004-02-23
    • Richard HsiaoWipul Pemsiri JayaekaraJeffrey S. Lille
    • Richard HsiaoWipul Pemsiri JayaekaraJeffrey S. Lille
    • G11B5/147
    • G11B5/1278Y10T29/49021
    • A method for forming a magnetic structure, such as a pole tip, includes forming a pole tip layer of magnetic material. A layer of polyimide precursor material is added above the pole tip layer and cured. A silicon-containing resist layer is added above the layer of polyimide precursor material and patterned. The resist layer is exposed to oxygen plasma for converting the resist into a glass-like material. Exposed portions of the cured polyimide precursor material are removed for exposing portions of the pole tip layer. The exposed portions of the pole tip layer are removed for forming a pole tip. Chemical mechanical polishing (CMP) can then be performed to remove any unwanted material remaining above the pole tip.
    • 用于形成诸如极尖的磁性结构的方法包括形成磁性材料的磁极尖端层。 将一层聚酰亚胺前体材料添加到极尖层上方并固化。 将含硅抗蚀剂层添加到聚酰亚胺前体材料层上方并图案化。 将抗蚀剂层暴露于氧等离子体以将抗蚀剂转化为玻璃状材料。 去除固化的聚酰亚胺前体材料的暴露部分以暴露极尖层的部分。 去除极尖端部的暴露部分以形成极尖。 然后可以进行化学机械抛光(CMP)以除去残留在极尖顶部的任何不需要的材料。
    • 9. 发明授权
    • Method of making magnetic head having narrow pole tip and fine pitch coil
    • 制造具有窄极尖和细间距线圈的磁头的方法
    • US06987646B2
    • 2006-01-17
    • US10632729
    • 2003-07-31
    • Richard HsiaoHugo Alberto Emilio Santini
    • Richard HsiaoHugo Alberto Emilio Santini
    • G11B5/127
    • G11B5/3163G11B5/012G11B5/17G11B5/3116G11B5/313Y10T29/49046
    • Following the deposition of an insulation layer, a patterned P2 pole tip seed layer is deposited. Significantly, the pole tip seed layer is not deposited beneath the induction coil area of the magnetic head. A dielectric layer is next deposited and a patterned RIE etching mask that includes both a P2 pole tip trench opening and an induction coil trench opening is fabricated upon the dielectric layer. Thereafter, in a single RIE etching step, the P2 pole tip trench is etched through the dielectric material down to the seed layer, and the induction coil trench is etched through the dielectric material down to the insulation layer. The P2 pole tip is first electroplated up into its trench, an induction coil seed layer is next deposited, and the induction coil is then electroplated up into the induction coil trench.
    • 在沉积绝缘层之后,沉积图案化的P2极端子种子层。 重要的是,极尖种子层没有沉积在磁头的感应线圈区域之下。 接下来沉积电介质层,并且在电介质层上制造包括P2极尖沟槽开口和感应线圈沟槽开口的图案化RIE蚀刻掩模。 此后,在单个RIE蚀刻步骤中,通过电介质材料将P2极尖沟槽蚀刻到种子层,并且感应线圈沟槽通过电介质材料被蚀刻到绝缘层。 首先将P2极端电镀到其沟槽中,然后沉积感应线圈种子层,然后将感应线圈电镀到感应线圈沟槽中。