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    • 1. 发明授权
    • Self-aligned void filling for mushroomed plating
    • 自对准空隙填充为蘑菇电镀
    • US06631546B1
    • 2003-10-14
    • US09496070
    • 2000-02-01
    • Thomas Edward DinanRichard HsiaoJohn I. KimAshok LahiriClinton David Snyder
    • Thomas Edward DinanRichard HsiaoJohn I. KimAshok LahiriClinton David Snyder
    • G11R5127
    • C25D5/022G11B5/127G11B5/3163Y10T29/49032Y10T29/49155Y10T29/49156
    • A method of manufacturing includes 2 mushroom plating process starts with an overplated component which includes an enlarged mushroom head having outer portions which overhang a resist layer. The next step in the first process embodiment is a heating step in which the resist layer is hard baked. Thereafter, using a dry etch process, such as a reactive ion etch (RIE) process, the hard baked resist layer is removed in all areas except beneath the overhang of the mushroom head. The area beneath the overhang thereby remains filled with hard baked resist. Thereafter, the device is ultimately encapsulated such that no voids and/or redeposition problems exist under the overhang due to the presence of the hard baked resist. In an alternative process embodiment of the present invention the dry etch process is conducted first upon the resist layer, such that the resist layer is removed in all areas except under the overhang. Thereafter, the device is baked, such that hard baked resist remains beneath the overhang. Ultimately, the device is encapsulated and no voids or redeposition problems exist beneath the overhang due to the presence of the hard baked resist.
    • 一种制造方法包括2个蘑菇电镀工艺,其中包括一个具有外伸部分的扩大的蘑菇头的一个过度的部件,其上覆盖了一个抗蚀剂层。 第一工艺实施例中的下一步骤是其中抗蚀剂层被硬烘烤的加热步骤。 此后,使用诸如反应离子蚀刻(RIE)工艺的干蚀刻工艺,除了在蘑菇头的突出部以外的所有区域中除去硬烘烤抗蚀剂层。 悬挂下方的区域由此保持充满硬烘烤抗蚀剂。 此后,装置最终被封装,使得由于存在硬烘烤抗蚀剂而在悬垂下不存在空隙和/或再沉积问题。 在本发明的替代方法实施方案中,首先在抗蚀剂层上进行干蚀刻工艺,使得除了在悬垂体之外的所有区域中除去抗蚀剂层。 此后,该装置被烘烤,使得硬烘烤抗蚀剂保留在悬垂物的下方。 最终,器件被封装,由于存在硬烘烤的抗蚀剂,悬臂下方不存在空隙或再沉积问题。
    • 3. 发明授权
    • Narrow write head pole tip fabricated by sidewall processing
    • 通过侧壁加工制造的窄写头磁极尖端
    • US07127800B2
    • 2006-10-31
    • US10610970
    • 2003-06-30
    • Thomas Edward DinanRichard Hsiao
    • Thomas Edward DinanRichard Hsiao
    • G11B5/187C25D5/02
    • G11B5/3163G11B5/012G11B5/3116Y10T29/49043Y10T29/49044Y10T29/49046Y10T29/4906
    • The magnetic head includes a P2 pole tip in which the P2 pole tip material is electroplated upon a sidewall of the P2 pole tip photolithographic trench. To accomplish this, a block of material is deposited upon a write gap layer, such that a generally straight, vertical sidewall of the block of material is disposed at the P2 pole tip location. Thereafter, an electroplating seed layer is deposited upon the sidewall. A P2 pole tip trench is photolithographically fabricated such that the sidewall (with its deposited seed layer) is exposed within the P2 pole tip trench. Thereafter, the P2 pole tip is formed by electroplating pole tip material upon the seed layer and outward from the sidewall within the trench. The width of the P2 pole tip is thus determined by the quantity of pole tip material that is deposited upon the sidewall.
    • 磁头包括P 2极尖端,其中P 2极尖端材料电镀在P 2极端光刻沟槽的侧壁上。 为了实现这一点,一块材料沉积在写间隙层上,使得材料块的大致直的垂直侧壁设置在P 2极尖端位置处。 此后,电镀种子层沉积在侧壁上。 光刻地制造P 2极端沟槽,使得侧壁(其沉积的种子层)暴露在P 2极尖端沟槽内。 此后,P 2极端部通过将电极端部材料电镀在种子层上并且从沟槽内的侧壁向外而形成。 因此,P 2极尖的宽度由沉积在侧壁上的极尖材料的量决定。
    • 4. 发明授权
    • Dual coil and lead connections fabricated by image transfer and selective etch
    • 通过图像传输和选择性蚀刻制造的双线圈和引线连接
    • US06507456B1
    • 2003-01-14
    • US09651149
    • 2000-08-30
    • Thomas Edward DinanRichard HsiaoEric James LeeScott A. MacDonald
    • Thomas Edward DinanRichard HsiaoEric James LeeScott A. MacDonald
    • G11B517
    • G11B5/17G11B5/313G11B5/3163
    • A magnetic head including a dual layer induction coil fabricated by reactive ion etching (RIE) techniques. An etch stop layer and an etchable insulation material layer and an induction coil etching mask are fabricated on a first magnetic pole. Induction coil trenches are thereafter RIE etched into the insulation material to the etch stop layer, and the first induction coil is fabricated into the induction coil trenches. Following a chemical mechanical polishing (CMP) step, a second etch stop layer, a second layer of etchable insulation material and a second induction coil etching mask are fabricated. Second induction coil trenches are RIE etched into the second insulation material layer to the second etch stop layer, and a second induction coil is fabricated into the second induction coil trenches. A second CMP step is followed by an insulation layer and the fabrication of a second magnetic pole (P2) upon the insulation layer.
    • 包括通过反应离子蚀刻(RIE)技术制造的双层感应线圈的磁头。 在第一磁极上制造蚀刻停止层和可蚀刻绝缘材料层和感应线圈蚀刻掩模。 此后,感应线圈沟槽RIE蚀刻到绝缘材料到蚀刻停止层,并且第一感应线圈被制造成感应线圈沟槽。 在化学机械抛光(CMP)步骤之后,制造第二蚀刻停止层,第二层可蚀刻绝缘材料和第二感应线圈蚀刻掩模。 将第二感应线圈沟槽RIE蚀刻到第二绝缘材料层到第二蚀刻停止层,并且将第二感应线圈制造成第二感应线圈沟槽。 第二CMP步骤之后是绝缘层,并且在绝缘层上制造第二磁极(P2)。
    • 5. 发明授权
    • Narrow write head pole tip fabricated by sidewall processing
    • 通过侧壁加工制造的窄写头磁极尖端
    • US07199972B2
    • 2007-04-03
    • US09944648
    • 2001-08-31
    • Thomas Edward DinanRichard Hsiao
    • Thomas Edward DinanRichard Hsiao
    • G11B5/127
    • G11B5/3163G11B5/012G11B5/3116Y10T29/49043Y10T29/49044Y10T29/49046Y10T29/4906
    • The magnetic head includes a P2 pole tip in which the P2 pole tip material is electroplated upon a sidewall of the P2 pole tip photolithographic trench. To accomplish this, a block of material is deposited upon a write gap layer, such that a generally straight, vertical sidewall of the block of material is disposed at the P2 pole tip location. Thereafter, an electroplating seed layer is deposited upon the sidewall. A P2 pole tip trench is photolithographically fabricated such that the sidewall (with its deposited seed layer) is exposed within the P2 pole tip trench. Thereafter, the P2 pole tip is formed by electroplating pole tip material upon the seed layer and outward from the sidewall within the trench, The width of the P2 pole tip is thus determined by the quantity of pole tip material that is deposited upon the sidewall.
    • 磁头包括P2极尖端,其中P2极尖端材料电镀在P2极尖端光刻沟槽的侧壁上。 为了实现这一点,一块材料沉积在写间隙层上,使得材料块的大致直的垂直侧壁设置在P2极尖端位置处。 此后,电镀种子层沉积在侧壁上。 通过光刻方法制造P2极端沟槽,使得侧壁(其沉积的种子层)暴露在P2极尖端沟槽内。 此后,P2极端部通过在种子层上电镀极尖材料并且在沟槽内从侧壁向外侧形成。因此,P2极尖端的宽度由沉积在侧壁上的极尖材料的量决定。