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51. 发明授权

US6037052A Magnetic thin film ferrite having a ferrite underlayer 失效
标题翻译：具有铁氧体底层的磁性薄膜铁氧体
公开(公告)号：US6037052A
公开(公告)日：2000-03-14
申请号：US890191
申请日：1997-07-09
申请人： Yingjian Chen , Mark H. Kryder
发明人： Yingjian Chen , Mark H. Kryder
IPC分类号： G11B5/706 , G11B5/66
CPC分类号： G11B5/70678 , Y10S428/90 , Y10T428/24992 , Y10T428/26 , Y10T428/265
摘要： A magnetic thin film includes a ferrite-containing underlayer and a ferrite-containing top layer. The composition of the underlayer differs from that of the top layer. During ex-situ annealing of the thin film structure, the underlayer inhibits diffusion of substrate atoms into the top layer. The composition of the underlayer relative to the top layer suppresses grain nucleation within the underlayer relative to the top layer at high temperatures and inhibits the nucleation of grains within the underlayer having undesirable composition, crystal structure, and orientation.
摘要翻译：磁性薄膜包括含铁素体的底层和含铁素体的顶层。底层的组成不同于顶层的组成。在薄膜结构的非原位退火期间，底层抑制底物原子扩散到顶层。底层相对于顶层的组成在高温下相对于顶层抑制底层内的晶粒成核，并抑制底层内的晶粒的成核具有不理想的组成，晶体结构和取向。

52. 发明申请

US20130026131A1 Method For Manufacturing Wraparound Shield Write Head Using Hard Masks 有权
标题翻译：使用硬掩模制造绕组屏蔽写头的方法
公开(公告)号：US20130026131A1
公开(公告)日：2013-01-31
申请号：US13193520
申请日：2011-07-28
申请人： Shiwen Huang , Fenglin Liu , Qiping Zhong , Kyusik Shin , Yingjian Chen
发明人： Shiwen Huang , Fenglin Liu , Qiping Zhong , Kyusik Shin , Yingjian Chen
IPC分类号： G11B5/127
CPC分类号： G11B5/3116 , G11B5/3163
摘要： The present disclosure describes a method for manufacturing a full wraparound shield damascene write head through the implementation of a three layered (tri-layered) hard mask. According to an embodiment of the invention, the various layers of hard mask are used for different purposes during the formation of a write head. The wraparound shield head of the present invention exhibits improved physical characteristics that further result in improved performance characteristics. Use of the hard mask layers according to the present invention allows for use of manufacturing processes that can be more closely controlled than those processes used in other processes. For example, smaller dimension lithographic techniques can be used. Also, reliance on certain CMP processes is not necessary where the use of CMP processes is not as well-controlled as deposition or lithographic techniques as is possible using the present invention.
摘要翻译：本公开描述了通过实施三层（三层）硬掩模制造全封装屏蔽镶嵌写头的方法。根据本发明的实施例，在形成写入头期间，各种硬掩模层用于不同的目的。本发明的环绕式屏蔽头表现出改进的物理特性，进一步导致改善的性能特征。根据本发明的硬掩模层的使用允许使用可以比其它工艺中使用的那些方法更加严格地控制的制造工艺。例如，可以使用较小尺寸的光刻技术。此外，在使用CMP工艺不如使用本发明可能的沉积或光刻技术那样不受控制的情况下，对某些CMP工艺的依赖是不必要的。

53. 发明授权

US08320077B1 Method and system for providing a high moment film 有权
标题翻译：提供高力矩胶片的方法和系统
公开(公告)号：US08320077B1
公开(公告)日：2012-11-27
申请号：US12334753
申请日：2008-12-15
申请人： Yunjun Tang , Yun-Fei Li , Yingjian Chen
发明人： Yunjun Tang , Yun-Fei Li , Yingjian Chen
IPC分类号： G11B5/127 , G11B5/147 , G11B5/31
CPC分类号： G11B5/147 , G11B5/1278 , G11B5/3113 , G11B5/3116 , G11B5/3146
摘要： A method and system for providing a high moment film are disclosed. The high moment film might be used in structures, such as a pole, of a magnetic transducer. The method and system includes providing a plurality of high moment layers and at least one soft magnetic layer interleaved with and ferromagnetically coupled with the plurality of high moment layers. Each of the plurality of high moment layers has a magnetic moment of greater than 2.4 Tesla. The at least one soft magnetic layer has a hard axis coercivity of not more than twenty Oersted. The high moment film has a total thickness of at least one thousand Angstroms.
摘要翻译：公开了一种用于提供高力矩薄膜的方法和系统。高力矩胶片可用于磁性传感器的结构，如磁极。该方法和系统包括提供多个高力矩层和至少一个与多个高力矩层交织并且与磁化耦合的软磁层。多个高力矩层中的每一个具有大于2.4特斯拉的磁矩。所述至少一个软磁性层具有不超过二十奥斯特的硬轴矫顽力。高力矩薄膜的总厚度至少为一千埃。

54. 发明授权

US08231796B1 Method and system for providing a magnetic recording transducer having side shields 有权
标题翻译：用于提供具有侧屏蔽的磁记录换能器的方法和系统
公开(公告)号：US08231796B1
公开(公告)日：2012-07-31
申请号：US12331238
申请日：2008-12-09
申请人： Yun-Fei Li , Yingjian Chen
发明人： Yun-Fei Li , Yingjian Chen
IPC分类号： B44C1/22
CPC分类号： G11B5/3163 , G11B5/3116 , G11B5/315
摘要： A method and system provide a magnetic transducer that includes an underlayer and a nonmagnetic layer on the underlayer. The method and system include providing a trench in the nonmagnetic layer. The trench has a plurality of sides. The method and system also include providing a separation layer in the trench. A portion of the separation layer resides on the sides of the trench. The method and system include providing the main pole. At least part of the main pole resides in the trench on the portion of the separation layer and has a plurality of pole sides. The method and system further include removing at least a portion of the second nonmagnetic layer, thereby exposing the portion of the separation layer. The method and system also include providing a side shield. The separation layer magnetically separates the pole sides from the side shield.
摘要翻译：一种方法和系统提供一种在底层上包括底层和非磁性层的磁换能器。该方法和系统包括在非磁性层中提供沟槽。沟槽具有多个侧面。该方法和系统还包括在沟槽中提供分离层。分离层的一部分位于沟槽的侧面。该方法和系统包括提供主极。主极的至少一部分位于分离层部分上的沟槽中，并且具有多个极侧。所述方法和系统还包括去除第二非磁性层的至少一部分，从而暴露分离层的部分。该方法和系统还包括提供侧护罩。分离层将极侧与侧护罩磁性地分离。

55. 发明申请

US20120127612A1 PROCESS TO MAKE PMR WRITER WITH LEADING EDGE SHIELD (LES) AND LEADING EDGE TAPER (LET) 有权
公开(公告)号：US20120127612A1
公开(公告)日：2012-05-24
申请号：US12954422
申请日：2010-11-24
申请人： Kyusik Shin , Qiping Zhong , Honglin Zhu , Yingjian Chen , Liubo Hong , Fenglin Liu
发明人： Kyusik Shin , Qiping Zhong , Honglin Zhu , Yingjian Chen , Liubo Hong , Fenglin Liu
IPC分类号： G11B5/10 , G01R1/16
CPC分类号： G11B5/3116 , G11B5/1278 , G11B5/3163
摘要： Methods for fabrication of leading edge shields and tapered magnetic poles with a tapered leading edge are provided. The leading edge shield may be formed by utilizing a CMP stop layer. The CMP stop layer may aid in preventing over polishing of the magnetic material. For the tapered magnetic poles with a tapered leading edge, a magnetic material is deposited on a planarized surface, a patterned resist material is formed, and exposed magnetic material is etched to form at least one tapered surface of the magnetic material.

56. 发明申请

US20120105999A1 INTEGRATED TOUCH-DOWN PAD AND TOUCH-DOWN SENSOR 有权
标题翻译：集成的触摸屏和触摸传感器
公开(公告)号：US20120105999A1
公开(公告)日：2012-05-03
申请号：US12914883
申请日：2010-10-28
申请人： Yingjian Chen , David J. Seagle , Samuel W. Yuan
发明人： Yingjian Chen , David J. Seagle , Samuel W. Yuan
IPC分类号： G11B21/02
CPC分类号： G11B5/607 , G11B5/6076
摘要： In one general embodiment, a magnetic head includes a touch-down pad, comprising at least one shielding element positioned between a leading edge of a main magnetic pole and a trailing edge of a lower return pole; an embedded contact sensor (ECS) in an electrically isolating layer, the ECS positioned near an ABS side of the magnetic head and between the leading edge of the main magnetic pole and the trailing edge of the lower return pole; and a first thermal fly-height control (TFC) element positioned away from the ABS side of the magnetic head. Additional systems and methods are also presented.
摘要翻译：在一个一般实施例中，磁头包括一个触控板，包括位于主磁极的前缘和下回极的后缘之间的至少一个屏蔽元件; 位于电绝缘层中的嵌入式接触传感器（ECS），ECS位于磁头的ABS侧附近，并且位于主磁极的前缘和下返回极的后缘之间; 以及远离磁头的ABS侧定位的第一热飞跃高度控制（TFC）元件。还介绍了其他系统和方法。

57. 发明授权

US08081403B1 Magnetic element having a smaller critical dimension of the free layer 有权
标题翻译：具有较小临界尺寸的自由层的磁性元件
公开(公告)号：US08081403B1
公开(公告)日：2011-12-20
申请号：US12170619
申请日：2008-07-10
申请人： Benjamin Chen , Hongping Yuan , Danning Yang , Wei Zhang , Hugh C. Hiner , Lei Wang , Yingjian Chen , Brant Nease
发明人： Benjamin Chen , Hongping Yuan , Danning Yang , Wei Zhang , Hugh C. Hiner , Lei Wang , Yingjian Chen , Brant Nease
IPC分类号： G11B5/39
CPC分类号： H01L43/12 , B82Y10/00 , B82Y25/00 , G11B5/3906 , G11B5/3909
摘要： A magnetic element includes a pinned layer, a nonferromagnetic spacer layer, and a free layer. The nonferromagnetic spacer layer resides between the pinned layer and the free layer. The free layer has a track width of not more than 0.08 micron.
摘要翻译：磁性元件包括钉扎层，非铁磁隔离层和自由层。非铁磁间隔层位于被钉扎层和自由层之间。自由层的轨道宽度不大于0.08微米。

58. 发明授权

US08077434B1 Perpendicular magnetic recording head having a recessed magnetic base layer 有权
标题翻译：具有凹陷磁性基底层的垂直磁记录头
公开(公告)号：US08077434B1
公开(公告)日：2011-12-13
申请号：US11942113
申请日：2007-11-19
申请人： Yong Shen , Lei Larry Zhang , Yingjian Chen , Ut Tran
发明人： Yong Shen , Lei Larry Zhang , Yingjian Chen , Ut Tran
IPC分类号： G11B5/147
CPC分类号： G11B5/1278 , G11B5/3116
摘要： A method and system for providing a magnetic transducer having an air-bearing surface (ABS) are described. The magnetic transducer includes a base layer, a perpendicular magnetic recording (PMR) pole on the base layer, an additional pole, a write shield, a write gap between the PMR pole and a portion of the write shield, and coil(s) that energize at least the additional pole. The base layer includes a first portion proximate to the ABS and a second portion recessed from the ABS. The first portion is nonmagnetic, while the second portion is magnetic. The PMR pole has a first front portion proximate to the ABS. The additional pole has a second front portion recessed from the ABS. At least a portion of the additional pole resides between the PMR pole and write shield. At least a portion of the write gap resides on the front portion of the PMR pole.
摘要翻译：描述了一种用于提供具有空气轴承表面（ABS）的磁换能器的方法和系统。磁换能器包括基层，基层上的垂直磁记录（PMR）极，附加极，写屏蔽，PMR极与写屏蔽的一部分之间的写间隙，以及线圈，至少激励附加极点。基层包括靠近ABS的第一部分和从ABS凹陷的第二部分。第一部分是非磁性的，而第二部分是磁性的。 PMR杆具有靠近ABS的第一前部。附加的杆具有从ABS凹入的第二前部。附加极点的至少一部分位于PMR极和写保护罩之间。写入间隙的至少一部分位于PMR极的前部。

59. 发明授权

US07819979B1 Method and system for cleaning magnetic artifacts using a carbonyl reactive ion etch 有权
标题翻译：使用羰基反应离子蚀刻清洁磁伪影的方法和系统
公开(公告)号：US07819979B1
公开(公告)日：2010-10-26
申请号：US11046972
申请日：2005-01-31
申请人： Benjamin Chen , Yun-Fei Li , Hugh C. Hiner , Wei Zhang , Yingjian Chen
发明人： Benjamin Chen , Yun-Fei Li , Hugh C. Hiner , Wei Zhang , Yingjian Chen
IPC分类号： B08B7/00 , B08B7/04
CPC分类号： G01R33/098 , B82Y25/00 , B82Y40/00 , G11B5/84 , G11C11/161 , H01F10/3254 , H01F10/3268 , H01F41/308 , H01F41/32
摘要： A method and system for providing a magnetic structure that includes at least one magnetic material is disclosed. The method and system include defining the magnetic structure. The magnetic structure also includes a top layer that is insensitive to an istroropic carbonyl reactive ion etch. The defining of the magnetic structure results in at least one artifact. The method and system further includes cleaning the at least one artifact using at least one isotropic carbonyl reactive ion etch.
摘要翻译：公开了一种用于提供包括至少一种磁性材料的磁性结构的方法和系统。该方法和系统包括限定磁结构。磁性结构还包括对异构羰基反应离子蚀刻不敏感的顶层。磁结构的定义导致至少一个假象。所述方法和系统还包括使用至少一种各向同性的羰基反应离子蚀刻来清洁所述至少一个假象。

60. 发明授权

US07063753B1 Electronic device utilizing magnetic nanotubes 失效
标题翻译：使用磁性纳米管的电子设备
公开(公告)号：US07063753B1
公开(公告)日：2006-06-20
申请号：US10611633
申请日：2003-07-01
申请人： Yingjian Chen , Xiaozhong Dang
发明人： Yingjian Chen , Xiaozhong Dang
IPC分类号： D01F9/12 , H01L21/00
CPC分类号： D01F9/127 , B82Y10/00 , B82Y25/00 , B82Y30/00 , H01L21/76838 , H01L51/0012 , H01L51/0048 , H01L51/0512 , H01L2221/1094 , Y10S977/75 , Y10S977/84 , Y10S977/888
摘要： Present invention provides enabling techniques of integrating novel nanotube elements into semiconductor devices, particularly in transistors, as gate channels or/and as interconnects. This is done in a series of process steps, which consist of fabricating magnetic-core-containing nanotubes of selected size (diameter and length), filtration of nanotube powders, preparing nanotube precursor in aqueous chemicals to form colloidal solutions of proper concentration, dispersing nanotube-containing solutions onto wafer surface, and finally positioning nanotubes at desired locations by magnetic means to complete nanotube device structure. The key to this invention is to provide miniature nanotubes with tangible physical properties, in this case, magnetic properties, so that they can be aligned, filtered, and precisely directed to desired locations for device application. Such processes enable nanotubes to be compatible with typical semiconductor wafer processing technologies.
摘要翻译：本发明提供了将新型纳米管元件集成到半导体器件中，特别是在晶体管中作为栅极通道或/或作为互连的使能技术。这是通过一系列工艺步骤完成的，其中包括制造选定尺寸（直径和长度）的含磁芯的纳米管，纳米管粉末的过滤，在含水化学品中制备纳米管前体以形成适当浓度的胶体溶液，分散纳米管并且最后通过磁性手段将纳米管定位在期望的位置以完成纳米管装置结构。本发明的关键是提供具有有形物理性能的微型纳米管，在这种情况下是磁性，使得它们可以对准，过滤并精确地定向到所需的位置用于器件应用。这样的工艺使得纳米管能够与典型的半导体晶片处理技术兼容。

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