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51. 发明授权

US5277527A Torque adjustment device 失效
标题翻译：扭矩调节装置
公开(公告)号：US5277527A
公开(公告)日：1994-01-11
申请号：US856533
申请日：1992-03-24
申请人： Takao Yokota , Yasuo Wada
发明人： Takao Yokota , Yasuo Wada
IPC分类号： B23B45/00 , B25B23/14 , B25B23/147 , B25B23/157
CPC分类号： B23B45/008 , B25B23/141 , Y10T408/70
摘要： A torque adjustment device is disclosed which enhances durability and in which it is easy to set a maximum torque and to perform fine adjustment while normally keeping constant a rotational force of a torque adjustment sleeve. A cylindrical clutch adjustment handle is rotatably mounted at an opening portion of a housing. A clutch case is received within the clutch adjustment handle. A plurality of slant surfaces which are different in height in the axial direction are formed in an inner circumferential portion of the clutch adjustment handle. A clutch plate is supported to the slant surfaces. Also, the clutch plate is displaceably mounted along an outer peripheral portion of the clutch case. Steel balls which are held by a clutch surface of an inwardly toothed gear are received in holes of the clutch case. A spring is interposed between an abutment plate in abutment with the steel balls and the clutch plate. A plurality of recesses are formed in a flanged portion of the clutch adjustment handle. A projection of a positioning plate is engaged with the associated recess.
摘要翻译：公开了一种扭矩调节装置，其提高耐久性，并且其容易设定最大扭矩并进行微调，同时通常保持扭矩调节套筒的旋转力恒定。圆柱形离合器调节手柄可旋转地安装在壳体的开口部分。离合器壳体接收在离合器调节手柄内。在离合器调节手柄的内周部形成有沿轴向高度不同的多个倾斜面。离合器片支撑在倾斜表面上。此外，离合器片可沿离合器壳体的外周部分可移动地安装。由向内齿轮的离合器表面保持的钢球容纳在离合器壳体的孔中。在与钢球和离合器板邻接的抵接板之间插入有弹簧。多个凹部形成在离合器调节手柄的凸缘部分中。定位板的突起与相关联的凹部接合。

52. 发明授权

US5261403A Magnetic resonance imaging apparatus 失效
标题翻译：磁共振成像装置
公开(公告)号：US5261403A
公开(公告)日：1993-11-16
申请号：US839662
申请日：1992-01-21
申请人： Minoru Saito , Toshihiro Ishizuka , Yasuo Wada
发明人： Minoru Saito , Toshihiro Ishizuka , Yasuo Wada
IPC分类号： G01R33/34 , A61B5/055
CPC分类号： G01R33/34061 , G01R33/34084
摘要： In an MR imaging apparatus, a receiving coil comprising an upper coil and a lower coil which jointly sandwitch a desired part of a body to be inspected in an openable and closable manner, the upper and the lower coils being connected by connection means comprised of flexible and electrically conductive member to form a single coil. NMR signals can be detected at a high sensitivity, enabling an image of a high S/N ratio and measurement of a wide detection region.
摘要翻译：在MR成像装置中，包括上部线圈和下部线圈的接收线圈，其以可开启和关闭的方式联合地对待检查的物体的所需部分进行开关，所述上部和下部线圈由包括柔性的连接装置连接和导电构件以形成单个线圈。可以以高灵敏度检测NMR信号，使得能够获得高S / N比的图像和宽检测区域的测量。

53. 外观设计

USD341016S Over-load cutout device for hand-operated, hoisting and pulling machine 失效
公开(公告)号：USD341016S
公开(公告)日：1993-11-02
申请号：US813413
申请日：1991-12-30
申请人： Yasuo Wada , Haruo Kubota , Yoshio Ueno
设计人： Yasuo Wada , Haruo Kubota , Yoshio Ueno

54. 发明授权

US5092166A Apparatus for determining shape of contact patch and contact pressure of tires 失效
标题翻译：用于确定接触片形状和轮胎接触压力的装置
公开(公告)号：US5092166A
公开(公告)日：1992-03-03
申请号：US646087
申请日：1991-01-28
申请人： Yasuo Wada , Akira Kajikawa
发明人： Yasuo Wada , Akira Kajikawa
IPC分类号： G01L5/00 , G01M17/02
CPC分类号： G01M17/027
摘要： An apparatus for determining the shape of contact patch and the contact pressure of a tire comprises a contact member made of a transparent material, a pressing unit for pressing the outer peripheral surface of the tire against the contact member, a sheet having elastic projections arranged regularly on one surface thereof and uniformly distributed thereover, and an observation device for observing through the contact member the projections as deformed when the tire is pressed against the contact member with the sheet interposed therebetween and with the projections thereof facing the contact member. The shape of contact patch and contact pressure of the tire can be determined by observing deformed projections by the device.
摘要翻译：用于确定接触片的形状和轮胎的接触压力的装置包括由透明材料制成的接触构件，用于将轮胎的外周面压靠在接触构件上的按压单元，具有规则地布置的弹性突起的片材在其一个表面上并均匀地分布在其上，以及观察装置，用于通过接触构件观察当轮胎被压靠在接触构件上时的突起变形，并且其突起面向接触构件。接触片的形状和轮胎的接触压力可以通过观察装置的变形的突起来确定。

55. 发明授权

US4377421A Method of making a stacked emitter in a bipolar transistor by selective laser irradiation 失效
标题翻译：通过选择性激光照射在双极晶体管中制造堆叠发射极的方法
公开(公告)号：US4377421A
公开(公告)日：1983-03-22
申请号：US186743
申请日：1980-09-12
申请人： Yasuo Wada , Takahide Ikeda , Masao Tamura
发明人： Yasuo Wada , Takahide Ikeda , Masao Tamura
IPC分类号： H01L29/73 , H01L21/02 , H01L21/20 , H01L21/268 , H01L21/331 , H01L29/04 , H01L29/08 , H01L29/72 , H01L21/263
CPC分类号： H01L28/20 , H01L21/268 , H01L29/04 , H01L29/0804 , H01L29/72 , Y10S117/904 , Y10S148/092
摘要： An insulating film is formed on a semiconductor substrate, and the insulating film on that part of the semiconductor substrate where an emitter is to be formed, is removed to expose the surface of the above part. A polycrystalline or amorphous silicon film is deposited on the entire surface, and then irradiated with a laser beam to convert that portion of the polycrystalline or amorphous silicon film which is deposited on the surface of the semiconductor substrate without interposing the insulating film therebetween, into a single crystal of silicon, thereby forming a stacked emitter.
摘要翻译：在半导体衬底上形成绝缘膜，并且去除要形成发射极的半导体衬底的那部分上的绝缘膜，以露出上述部分的表面。多晶或非晶硅膜沉积在整个表面上，然后用激光束照射，以将沉积在半导体衬底的表面上的多晶硅或非晶硅膜的那部分转换成其间的绝缘膜，硅单晶，从而形成堆叠的发射极。

56. 发明授权

US4351674A Method of producing a semiconductor device 失效
标题翻译：半导体装置的制造方法
公开(公告)号：US4351674A
公开(公告)日：1982-09-28
申请号：US182825
申请日：1980-08-29
申请人： Isao Yoshida , Yasuo Wada , Masao Tamura , Masanobu Miyao , Makoto Ohkura , Nobuyoshi Natsuaki , Takashi Tokuyama
发明人： Isao Yoshida , Yasuo Wada , Masao Tamura , Masanobu Miyao , Makoto Ohkura , Nobuyoshi Natsuaki , Takashi Tokuyama
IPC分类号： H01L27/04 , H01L21/22 , H01L21/268 , H01L21/3215 , H01L21/822 , H01L29/78 , H01L21/265 , H01L21/263
CPC分类号： H01L21/268 , H01L21/32155 , Y10S148/091
摘要： A region containing a high concentration of impurity and a desired region adjacent thereto are fused by irradiation with a laser beam, to diffuse the impurity in the lateral direction into the desired region and to render the desired region a low resistance.Since this method can execute only the lateral diffusion of the impurity without affecting other portions, it is very useful for forming a high breakdown voltage MIS-FET, a resistor etc.
摘要翻译：含有高浓度杂质的区域和与其相邻的期望区域通过用激光束照射而熔化，从而将横向杂质扩散到所需区域并使所需区域呈现低电阻。由于该方法只能执行杂质的横向扩散而不影响其它部分，因此形成高击穿电压MIS-FET，电阻等非常有用。

57. 发明授权

US4016007A Method for fabricating a silicon device utilizing ion-implantation and selective oxidation 失效
标题翻译：利用离子注入和选择氧化制造硅器件的方法
公开(公告)号：US4016007A
公开(公告)日：1977-04-05
申请号：US658065
申请日：1976-02-13
申请人： Yasuo Wada , Hiroo Usui , Mitsumasa Koyanagi , Mikio Ashikawa
发明人： Yasuo Wada , Hiroo Usui , Mitsumasa Koyanagi , Mikio Ashikawa
IPC分类号： H01L21/76 , H01L21/00 , H01L21/316 , H01L21/32 , H01L21/321 , H01L21/762 , H01L29/00 , H01L21/265
CPC分类号： H01L21/00 , H01L21/02238 , H01L21/02255 , H01L21/02299 , H01L21/31662 , H01L21/32 , H01L21/321 , H01L21/3211 , H01L21/76202 , H01L29/00 , Y10S148/085 , Y10S148/112 , Y10S148/113 , Y10S148/114 , Y10S148/117
摘要： A polycrystalline silicon layer is deposited by chemical vapor deposition method at a predetermined location on an oxide film grown by thermal oxidation on a surface of a monocrystal silicon substrate. Nitrogen ions are implanted in the outer surface of the polycrystalline silicon layer and the exposed surface of the oxide film. The whole surfaces are oxidized by wet oxidation so as to form a thick oxide layer at the surface of the oxide film which is not covered by the polycrystalline silicon layer.
摘要翻译：通过化学气相沉积法在单晶硅衬底的表面上通过热氧化生长的氧化膜上的预定位置沉积多晶硅层。氮离子注入多晶硅层的外表面和氧化膜的暴露表面。整个表面被湿氧化氧化，从而在氧化膜的未被多晶硅层覆盖的表面形成厚的氧化层。

58. 发明授权

US08471237B2 Circuit board including a graphene film having contact region covering a recessed region and a patterned metal film covering the contact region and in direct electrical contact therewith, and device including same 失效
标题翻译：包括具有覆盖凹陷区域的接触区域的石墨烯膜和覆盖接触区域并与其直接电接触的图案化金属膜的电路板以及包括其的装置
公开(公告)号：US08471237B2
公开(公告)日：2013-06-25
申请号：US13013984
申请日：2011-01-26
申请人： Makoto Okai , Motoyuki Hirooka , Yasuo Wada
发明人： Makoto Okai , Motoyuki Hirooka , Yasuo Wada
IPC分类号： H01L29/06 , H01L29/40
CPC分类号： H01L29/1606 , G02B6/4246 , H01L21/2855 , H01L29/41 , H01L29/45 , H01L29/7781 , H01L29/78603 , H01L29/78684
摘要： A circuit board having a graphene circuit according to the present invention includes: a base substrate; a patterned aluminum oxide film formed on the base substrate, the patterned aluminum oxide film having an average composition of Al2−xO3+x (where x is 0 or more), the patterned aluminum oxide film having a recessed region whose surface has one or more cone-shaped recesses therein; a graphene film preferentially grown only on the patterned aluminum oxide film, the graphene film having one or more graphene atomic layers, the graphene film having a contact region that covers the recessed region, the graphene film growing parallel to a flat surface of the recessed region and parallel to an inner wall surface of each cone-shaped recess of the recessed region; and a patterned metal film, a part of the patterned metal film covering and having electrical contact with the contact region, the patterned metal film filling each recess covered by the graphene film.
摘要翻译：根据本发明的具有石墨烯电路的电路板包括：基底; 形成在基底基板上的图案化氧化铝膜，图案化的氧化铝膜具有平均组成为Al 2-x O 3 + x（其中x为0或更大）的图案化氧化铝膜，图案化的氧化铝膜具有凹陷区域，其表面具有一个或多个锥形凹槽; 优选仅在图案化的氧化铝膜上生长的石墨烯膜，所述石墨烯膜具有一个或多个石墨烯原子层，所述石墨烯膜具有覆盖所述凹陷区域的接触区域，所述石墨烯膜平行于所述凹陷区域的平坦表面生长并且平行于凹陷区域的每个锥形凹部的内壁表面; 以及图案化的金属膜，所述图案化的金属膜的一部分覆盖并与所述接触区域电接触，所述图案化金属膜填充由所述石墨烯膜覆盖的每个凹部。

59. 发明授权

US08410474B2 Graphene grown substrate and electronic/photonic integrated circuits using same 失效
标题翻译：石墨烯生长衬底和电子/光子集成电路使用相同
公开(公告)号：US08410474B2
公开(公告)日：2013-04-02
申请号：US13010075
申请日：2011-01-20
申请人： Makoto Okai , Motoyuki Hirooka , Yasuo Wada
发明人： Makoto Okai , Motoyuki Hirooka , Yasuo Wada
IPC分类号： H01L29/06
CPC分类号： H01L21/02645 , B82Y40/00 , H01L21/02381 , H01L21/0242 , H01L21/02488 , H01L21/02494 , H01L21/02502 , H01L21/02527 , H01L21/0262 , H01L27/1218 , H01L29/1606 , H01L29/7781 , H01L29/78603 , H01L29/78684 , H01L31/028 , H01L31/08 , H01L31/1136 , H01L33/40 , Y02E10/547
摘要： A substrate having a graphene film grown thereon according to the present invention includes: a base substrate; a patterned aluminum oxide film formed on the base substrate, the patterned aluminum oxide film having an average composition of Al2−xO3+x (where x is 0 or more); and a graphene film preferentially grown only on the patterned aluminum oxide film, the graphene film having one or more graphene atomic layers, the graphene film growing parallel to a surface of the patterned aluminum oxide film, the graphene film having an electrical conductivity of 1×104 S/cm or more measured by a four-probe resistive method using an inter-voltage-probe distance of 0.2 mm.
摘要翻译：根据本发明的在其上生长的石墨烯膜的基板包括：基底; 形成在基底基板上的图案化氧化铝膜，平均组成为Al 2-x O 3 + x（x为0以上）的图案化氧化铝膜; 并且仅在图案化的氧化铝膜上生长的石墨烯膜，所述石墨烯膜具有一个或多个石墨烯原子层，所述石墨烯膜平行于所述图案化氧化铝膜的表面生长，所述石墨烯膜的导电率为1× 通过使用0.2mm的电压 - 探针距离的四探针电阻法测量为104S / cm以上。

60. 发明申请

US20120025196A1 ORGANIC THIN FILM TRANSISTOR AND SEMICONDUCTOR INTEGRATED CIRCUIT 审中-公开
标题翻译：有机薄膜晶体管和半导体集成电路
公开(公告)号：US20120025196A1
公开(公告)日：2012-02-02
申请号：US13263122
申请日：2010-01-18
申请人： Yasuo Wada , Toru Toyabe , Ken Tsutsui
发明人： Yasuo Wada , Toru Toyabe , Ken Tsutsui
IPC分类号： H01L51/10
CPC分类号： H01L51/002 , H01L51/0541 , H01L51/0545 , H01L51/105
摘要： An organic thin film transistor includes an organic semiconductor layer, a source electrode and a drain electrode which are separated from each other and are individually in contact with the organic semiconductor layer, a gate insulating film which is in contact with the organic semiconductor layer between the source and drain electrodes, and a gate electrode which is opposed to the organic semiconductor layer and is in contact with the gate insulating film. In the organic thin film transistor, a high-concentration region of the organic semiconductor layer which is located near the source electrode has an impurity concentration set higher than an impurity concentration of a low-concentration region of the organic semiconductor layer, the low-concentration region being located near the gate electrode in the thickness direction of the organic semiconductor layer between the source and drain electrodes.
摘要翻译：有机薄膜晶体管包括彼此分离并分别与有机半导体层接触的有机半导体层，源电极和漏电极，在有机半导体层之间与有机半导体层接触的栅极绝缘膜源极和漏极以及与有机半导体层相对并与栅极绝缘膜接触的栅电极。在有机薄膜晶体管中，位于源电极附近的有机半导体层的高浓度区域的杂质浓度设定为高于有机半导体层的低浓度区域的杂质浓度，低浓度区域位于源极和漏极之间的有机半导体层的厚度方向上的栅电极附近。

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