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1. 发明授权

US4351674A Method of producing a semiconductor device 失效
标题翻译：半导体装置的制造方法
公开(公告)号：US4351674A
公开(公告)日：1982-09-28
申请号：US182825
申请日：1980-08-29
申请人： Isao Yoshida , Yasuo Wada , Masao Tamura , Masanobu Miyao , Makoto Ohkura , Nobuyoshi Natsuaki , Takashi Tokuyama
发明人： Isao Yoshida , Yasuo Wada , Masao Tamura , Masanobu Miyao , Makoto Ohkura , Nobuyoshi Natsuaki , Takashi Tokuyama
IPC分类号： H01L27/04 , H01L21/22 , H01L21/268 , H01L21/3215 , H01L21/822 , H01L29/78 , H01L21/265 , H01L21/263
CPC分类号： H01L21/268 , H01L21/32155 , Y10S148/091
摘要： A region containing a high concentration of impurity and a desired region adjacent thereto are fused by irradiation with a laser beam, to diffuse the impurity in the lateral direction into the desired region and to render the desired region a low resistance.Since this method can execute only the lateral diffusion of the impurity without affecting other portions, it is very useful for forming a high breakdown voltage MIS-FET, a resistor etc.
摘要翻译：含有高浓度杂质的区域和与其相邻的期望区域通过用激光束照射而熔化，从而将横向杂质扩散到所需区域并使所需区域呈现低电阻。由于该方法只能执行杂质的横向扩散而不影响其它部分，因此形成高击穿电压MIS-FET，电阻等非常有用。

2. 发明授权

US4498951A Method of manufacturing single-crystal film 失效
标题翻译：制造单晶膜的方法
公开(公告)号：US4498951A
公开(公告)日：1985-02-12
申请号：US423206
申请日：1982-09-24
申请人： Masao Tamura , Naotsugu Yoshihiro , Nobuyoshi Natsuaki , Masanobu Miyao , Makoto Ohkura , Hideo Sunami , Takashi Tokuyama
发明人： Masao Tamura , Naotsugu Yoshihiro , Nobuyoshi Natsuaki , Masanobu Miyao , Makoto Ohkura , Hideo Sunami , Takashi Tokuyama
IPC分类号： H01L21/31 , H01L21/20 , H01L21/263 , H01L21/268 , C30B25/04
CPC分类号： H01L21/02381 , H01L21/02532 , H01L21/02546 , H01L21/0262 , H01L21/02639 , H01L21/02675 , H01L21/2636 , H01L21/268 , Y10S117/904 , Y10S117/905 , Y10S148/003 , Y10S148/09 , Y10S148/123 , Y10S438/969
摘要： The whole surface of a polycrystalline or amorphous semiconductor film deposited so as to continuously cover the surface of a single-crystal substrate and an insulating film is irradiated with a laser beam or electron beam, thereby to selectively melt only those parts of the polycrystalline or amorphous semiconductor film which overlie the insulating film. Thus, a single-crystal semiconductor film is formed only the insular insulating film formed on the single-crystal substrate.
摘要翻译：用激光束或电子束照射沉积以连续覆盖单晶衬底和绝缘膜的表面的多晶或非晶半导体膜的整个表面，从而仅选择地熔化多晶或非晶覆盖绝缘膜的半导体膜。因此，单晶半导体膜仅形成在单晶衬底上形成的绝缘膜。

3. 发明授权

US4565584A Method of producing single crystal film utilizing a two-step heat treatment 失效
标题翻译：利用两步热处理制备单晶膜的方法
公开(公告)号：US4565584A
公开(公告)日：1986-01-21
申请号：US460801
申请日：1983-01-25
申请人： Masao Tamura , Makoto Ohkura , Masanobu Miyao , Nobuyoshi Natsuaki , Naotsugu Yoshihiro , Takashi Tokuyama , Hiroshi Ishihara
发明人： Masao Tamura , Makoto Ohkura , Masanobu Miyao , Nobuyoshi Natsuaki , Naotsugu Yoshihiro , Takashi Tokuyama , Hiroshi Ishihara
IPC分类号： H01L21/20 , C30B1/02 , C30B1/08 , H01L21/31 , H01L21/263 , H01L21/205
CPC分类号： C30B1/08 , C30B1/023 , Y10S148/003 , Y10S148/09 , Y10S148/123 , Y10S438/909
摘要： An amorphous or polycrystalline film which continuously covers the exposed surface of a single crystal substrate and an insulating film, is deposited in ultra-high vacuum and then heat-treated. The film is subjected to solid phase epitaxial growth at a temperature far lower than in prior-art methods, whereby a single crystal film is formed.
摘要翻译：连续覆盖单晶基板和绝缘膜的暴露表面的非晶或多晶膜沉积在超高真空中，然后进行热处理。在远低于现有技术方法的温度下对该膜进行固相外延生长，从而形成单晶膜。

4. 发明授权

US4394191A Stacked polycrystalline silicon film of high and low conductivity layers 失效
标题翻译：高导电层和低导电层堆叠多晶硅膜
公开(公告)号：US4394191A
公开(公告)日：1983-07-19
申请号：US217224
申请日：1980-12-17
申请人： Yasuo Wada , Hiroo Usui , Makoto Ohkura , Masanobu Miyao , Masao Tamura , Takashi Tokuyama
发明人： Yasuo Wada , Hiroo Usui , Makoto Ohkura , Masanobu Miyao , Masao Tamura , Takashi Tokuyama
IPC分类号： C01B33/02 , C23C16/24 , H01L21/20 , H01L21/268 , H01L29/04 , H01L29/36 , H01L21/263 , B05D3/06
CPC分类号： H01L21/268 , H01L29/04 , H01L29/36 , Y10S438/934
摘要： A polycrystalline silicon film is implanted with an impurity in large amounts and is heated to be annealed, whereupon it is irradiated with a laser beam to be annealed.Thus, a polycrystalline silicon film of very low resistivity consisting of a second layer whose activated impurity concentration is equal to or below a solid solubility and a first layer whose activated impurity concentration is above the solid solubility is formed.
摘要翻译：多晶硅膜被大量注入杂质，并加热退火，然后用待退火的激光束进行照射。因此，形成具有活性杂质浓度等于或低于固体溶解度的第二层和活性杂质浓度高于固溶度的第一层的非常低电阻率的多晶硅膜。

5. 发明授权

US4570175A Three-dimensional semiconductor device with thin film monocrystalline member contacting substrate at a plurality of locations 失效
标题翻译：具有薄膜单晶构件的三维半导体器件在多个位置处接触衬底
公开(公告)号：US4570175A
公开(公告)日：1986-02-11
申请号：US505377
申请日：1983-06-16
申请人： Masanobu Miyao , Makoto Ohkura , Iwao Takemoto , Terunori Warabisako , Kiichiro Mukai , Ryo Haruta , Yasushiro Nishioka , Shinichiro Kimura , Takashi Tokuyama
发明人： Masanobu Miyao , Makoto Ohkura , Iwao Takemoto , Terunori Warabisako , Kiichiro Mukai , Ryo Haruta , Yasushiro Nishioka , Shinichiro Kimura , Takashi Tokuyama
IPC分类号： H01L27/00 , H01L21/762 , H01L21/8234 , H01L21/8238 , H01L27/06 , H01L27/08 , H01L27/088 , H01L27/092 , H01L29/78 , H01L29/786
CPC分类号： H01L21/76264 , H01L27/0688 , H01L21/76272 , H01L21/76281
摘要： At least one layer of insulator film and single-crystal film are alternately stacked and deposited on a surface of a semiconductor substrate, and an impurity-doped region formed in each semiconductor film is used as a gate, source or drain of a MOS transistor.Thus, a three-dimensional semiconductor device is constructed in which MOS transistors are arranged, not only in the direction of the semiconductor substrate surface, but also in a direction perpendicular thereto.
摘要翻译：绝缘膜和单晶膜的至少一层交替层叠并沉积在半导体衬底的表面上，并且将形成在每个半导体膜中的杂质掺杂区域用作MOS晶体管的栅极，源极或漏极。因此，不仅在半导体衬底表面的方向上，而且在垂直于其的方向上，构成了MOS晶体管被布置的三维半导体器件。

6. 发明授权

US4609407A Method of making three dimensional semiconductor devices in selectively laser regrown polysilicon or amorphous silicon layers 失效
标题翻译：在选择性地激光再生多晶硅或非晶硅层中制造三维半导体器件的方法
公开(公告)号：US4609407A
公开(公告)日：1986-09-02
申请号：US563036
申请日：1983-12-19
申请人： Tamura Masao , Hirotsugu Kozuka , Yasuo Wada , Makoto Ohkura , Tamura Hiroshi , Takashi Tokuyama , Takahiro Okabe , Osamu Minato , Shinya Ohba
发明人： Tamura Masao , Hirotsugu Kozuka , Yasuo Wada , Makoto Ohkura , Tamura Hiroshi , Takashi Tokuyama , Takahiro Okabe , Osamu Minato , Shinya Ohba
IPC分类号： H01L21/268 , H01L21/822 , H01L27/02 , H01L27/06 , H01L29/04 , H01L21/265 , H01L21/26
CPC分类号： H01L21/8221 , H01L21/268 , H01L27/0233 , H01L27/0688 , H01L29/04
摘要： Herein disclosed is a semiconductor device having at least one lower resistance region formed in the single-crystalline semiconductor film which is so formed to continuously coat both a single-crystalline semiconductor substrate and an insulating film formed on the surface of the substrate.Since the aforementioned single-crystalline semiconductor film is used, many advantages which are not attained from the semiconductor device according to the prior art can be obtained.The aforementioned single-crystalline semiconductor film is formed by irradiating a polycrystalline or amorphous semiconductor film with a laser beam.
摘要翻译：这里公开了一种半导体器件，其具有形成在单晶半导体膜中的至少一个下电阻区域，该至少一个下电阻区域被形成为连续地涂覆单晶半导体衬底和形成在衬底表面上的绝缘膜。由于使用上述单晶半导体膜，因此可以获得从现有技术的半导体器件中获得的许多优点。通过用激光束照射多晶或非晶半导体膜来形成上述单晶半导体膜。

7. 发明授权

US4992792A Digital-analog converter for converting digital audio signals 失效
标题翻译：用于转换数字音频信号的数模转换器
公开(公告)号：US4992792A
公开(公告)日：1991-02-12
申请号：US354998
申请日：1989-05-22
申请人： Ryoichi Mori , Kazuo Toraichi , Takashi Tokuyama , Youichi Hashimoto , Koichi Endo
发明人： Ryoichi Mori , Kazuo Toraichi , Takashi Tokuyama , Youichi Hashimoto , Koichi Endo
IPC分类号： H03M1/66 , H03M1/00 , H03M1/08
CPC分类号： H03M1/662
摘要： A data generator generates digital data at a sampling time interval .sub..DELTA. T (sampling frequency f.sub.s =1/.DELTA.T), and the three latest items of digital data V.sub.-1, V.sub.0, V.sub.+1 are repeatedly latched successively in three latch circuits every 3.multidot..sub..DELTA. T. A pulse response signal generator outputs unit pulse response signals of period 3.multidot..sub..DELTA. T at the time interval .multidot..sub..DELTA. T, and three multiplying-type DA converters multiply these three unit pulse response signals .phi..sub.0 (t+.sub..DELTA. T), .phi..sub.0 (t), .phi..sub.0 (t-.sub..DELTA. T) by the digital data V.sub.-1, V.sub.0, V.sub.+1, respectively, at a speed of a.multidot.f.sub.s (a times in time .sub..DELTA. T). The outputs of these multiplying-type DA converters are combined into an analog signal S.sub.A, which is delivered as an output.
摘要翻译：数据发生器以采样时间间隔DELTA T（采样频率fs = 1 / DELTA T）生成数字数据，并且三个锁存电路中的三个最新数字数据V-1，V0，V + 1被重复锁存 3x DELTA T.脉冲响应信号发生器以时间间隔x DELTA T输出周期3x DELTA T的单位脉冲响应信号，并且三个乘法型DA转换器将这三个单位脉冲响应信号phi 0（t + DELTA T），phi 分别以axfs的速度（时间DELTA T）的数字数据V-1，V0，V + 1分别为0（t），phi 0（t-DELTA T）。这些乘法型DA转换器的输出被组合成模拟信号SA，作为输出。

8. 发明授权

US09381146B2 Skin conditioner 有权
标题翻译：皮肤护理
公开(公告)号：US09381146B2
公开(公告)日：2016-07-05
申请号：US13013316
申请日：2011-01-25
申请人： Takashi Tokuyama , Megumi Jo
发明人： Takashi Tokuyama , Megumi Jo
IPC分类号： A61K36/899 , A61K8/41 , A61K8/44 , A61Q19/00
CPC分类号： A61K8/41 , A61K8/44 , A61Q19/00
摘要： The present invention relates to a skin conditioner comprising the compound represented with the general formula: (wherein, the symbols are the same as those defined in the text). Examples of active ingredients of the present invention include L-arginine and ethanolamine. These active ingredients can be acquired as chemical synthesis products, or they may also be acquired in the form of natural substances. Preferable examples of natural substances include substances containing L-arginine and/or ethanolamine obtained from rice. The skin conditioner as claimed in the present invention demonstrates remarkable effectiveness as an agent for the prevention and treatment of atopic dermatitis and as a skin moisture retention agent.
摘要翻译：本发明涉及一种皮肤调理剂，其包含由以下通式表示的化合物：（其中，符号与文中所定义的相同）。本发明的活性成分的实例包括L-精氨酸和乙醇胺。这些活性成分可以作为化学合成产品获得，或者也可以以天然物质的形式获得。天然物质的优选实例包括从水稻获得的含有L-精氨酸和/或乙醇胺的物质。本发明所述的皮肤调理剂作为预防和治疗特应性皮炎和作为皮肤保湿剂的药剂显示出显着的效果。

9. 发明授权

US5728384A Antiulcer agent 失效
标题翻译：抗溃疡剂
公开(公告)号：US5728384A
公开(公告)日：1998-03-17
申请号：US572504
申请日：1995-12-14
申请人： Takashi Tokuyama
发明人： Takashi Tokuyama
IPC分类号： A23L2/38 , A61K36/48 , A61K36/899 , A61K35/78
CPC分类号： A23L2/38 , A61K36/48 , A61K36/752 , A61K36/899 , Y10S514/925 , Y10S514/926 , Y10S514/927
摘要： Ground germinated rice or an extract of polished rice or germinated rice are effective in preventing or treating ulcers.
摘要翻译：地面发芽稻或糙米或发芽米的提取物有效预防或治疗溃疡。

10. 发明授权

US3967310A Semiconductor device having controlled surface charges by passivation films formed thereon 失效
标题翻译：具有由其上形成的钝化膜控制的表面电荷的半导体器件
公开(公告)号：US3967310A
公开(公告)日：1976-06-29
申请号：US420590
申请日：1973-11-30
申请人： Masatada Horiuchi , Takashi Tokuyama , Takao Miyazaki
发明人： Masatada Horiuchi , Takashi Tokuyama , Takao Miyazaki
IPC分类号： H01L21/00 , H01L21/3105 , H01L21/316 , H01L21/82 , H01L23/29 , H01L23/532 , H01L27/06 , H01L29/00 , H01L29/51 , H01L27/04 , H01L29/78 , H01L29/94
CPC分类号： H01L29/513 , H01L21/00 , H01L21/3105 , H01L21/316 , H01L21/82 , H01L23/29 , H01L23/5329 , H01L23/53295 , H01L27/0652 , H01L29/00 , H01L29/51 , H01L2924/0002
摘要： After desired impurities are diffused into a semiconductor substrate through a masking layer of SiO.sub.2 formed thereupon so as to form a semiconductor device, the masking layer is completely removed therefrom and thereafter more than two thin layers of different insulating materials are deposited upon the cleaned surface of the semiconductor device thus providing a method of forming a semiconductor device with an improved passivation film thereon. Said insulating materials are selected from the group consisting of silicon dioxide, a silicon nitride, alumina, boro-silicate glass, phospho-silicate glass, alumino-silicate glass, alumino-phospho-silicate glass and alumino-boro-silicate glass, and the thickness of each thin layer is in the range of 300 to 1500 angstroms and the first layer is silicon dioxide.
摘要翻译：在所需的杂质通过其上形成的SiO 2掩蔽层扩散到半导体衬底中以形成半导体器件之后，完全去除掩模层，然后将不止于两层不同绝缘材料的不同绝缘材料沉积在清洁表面上因此，半导体器件提供了在其上形成具有改进的钝化膜的半导体器件的方法。所述绝缘材料选自二氧化硅，氮化硅，氧化铝，硼硅酸盐玻璃，磷硅酸盐玻璃，铝硅酸盐玻璃，铝磷酸硅酸盐玻璃和铝 - 硼硅酸盐玻璃，以及每个薄层的厚度在300至1500埃的范围内，第一层是二氧化硅。

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