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51. 发明授权

US5500422A Benzamide derivative 失效
标题翻译：苯甲酰胺衍生物
公开(公告)号：US5500422A
公开(公告)日：1996-03-19
申请号：US348808
申请日：1994-11-28
申请人： Yasuo Ito , Hideo Kato , Shingo Yasuda , Nobuhiko Iwasaki , Hiroyuki Nishino , Makoto Takeshita
发明人： Yasuo Ito , Hideo Kato , Shingo Yasuda , Nobuhiko Iwasaki , Hiroyuki Nishino , Makoto Takeshita
IPC分类号： C07D211/58 , C07D451/04 , C07D451/14 , C07D211/36 , A61K31/445
CPC分类号： C07D451/04 , C07D211/58 , C07D451/14
摘要： A benzamide derivative represented by the following formula: ##STR1## wherein R.sup.1 represents a hydrogen atom or a lower alkanoyl group; R.sup.2 represents a hydrogen atom or a halogen atom; R.sup.3 represents a lower alkoxy group; R.sup.4 represents a hydrogen atom or a lower alkyl group; R.sup.5 represents a hydrogen atom, a lower alkyl group, or a lower alkoxy group; A represents C.sub.1 -C.sub.7 alkylene group which may optionally be substituted with a lower alkyl group; X represents a methylene group, an oxygen atom, or a sulfur atom; m represents an integer of from 0 to 3; n represents an integer of from 0 to 3; and p represents an integer of from 0 to 2 and a pharmacologically acceptable salt thereof is provided. These compounds are useful since they have gastrointestinal stimulating activity, and a pharmaceutical composition comprising said compound is useful for the treatment of gastrointestinal diseases.
摘要翻译：由下式表示的苯甲酰胺衍生物：其中R 1表示氢原子或低级烷酰基; R2表示氢原子或卤素原子; R3表示低级烷氧基; R4代表氢原子或低级烷基; R5表示氢原子，低级烷基或低级烷氧基; A表示可以被低级烷基取代的C1-C7亚烷基; X表示亚甲基，氧原子或硫原子; m表示0〜3的整数， n表示0〜3的整数， p表示0〜2的整数，并且其药理学上可接受的盐。这些化合物是有用的，因为它们具有胃肠道刺激活性，并且包含所述化合物的药物组合物可用于治疗胃肠道疾病。

52. 发明授权

US5499769A Fuel injection valve including air promoting atomization 失效
标题翻译：燃油喷射阀包括促进雾化
公开(公告)号：US5499769A
公开(公告)日：1996-03-19
申请号：US196216
申请日：1994-03-15
申请人： Masanori Namiki , Kazuyoshi Mori , Hideo Kato
发明人： Masanori Namiki , Kazuyoshi Mori , Hideo Kato
IPC分类号： F02M51/08 , F02M51/06 , F02M61/18 , F02M69/00 , F02M69/04
CPC分类号： F02M61/1853 , F02M51/061 , F02M61/18 , F02M69/044 , F02M69/047
摘要： A fuel injection valve wherein fuel sprays discharged from a fuel injection hole are impacted with auxiliary air introduced from outside to thereby promote atomization and subsequent vaporization of the fuel sprays, is provided with fuel spray guide passages for each guiding one of the fuel sprays. As a result, the fuel sprays discharged from the fuel injection holes, are impacted by the auxiliary air to thereby promote atomization and subsequent vaporization thereof, and are guided by the inner walls of the fuel spray guide passages, to thereby control the diffusion and spray direction of the fuel sprays. The cross-sectional shape of the fuel sprays is thus controlled to an optimum shape so that adhesion of fuel to the inner wall of the intake port is minimized, thereby improving combustion, and in particular reducing hydrocarbon emissions and improving fuel consumption.
摘要翻译： PCT No.PCT / JP93 / 00996 Sec。 371日期1994年3月15日 102（e）1994年3月15日PCT提交1993年7月16日PCT公布。出版物WO94 / 02736 日期：1994年2月3日。一种燃料喷射阀，其中从燃料喷射孔排出的燃料喷射被从外部引入的辅助空气冲击，从而促进雾化和随后的燃料喷雾蒸发，设置有用于每个引导的燃料喷射引导通道其中一种燃油喷雾。结果，从燃料喷射孔排出的燃油喷射被辅助空气冲击，从而促使其雾化并随后蒸发，并由燃料喷雾引导通道的内壁引导，从而控制扩散和喷雾燃料喷雾方向。因此，燃料喷雾的横截面形状被控制到最佳形状，使得燃料对进气口的内壁的附着力最小化，从而改善燃烧，特别是减少碳氢化合物排放并改善燃料消耗。

53. 发明授权

US5420822A Non-volatile semiconductor memory device 失效
标题翻译：非易失性半导体存储器件
公开(公告)号：US5420822A
公开(公告)日：1995-05-30
申请号：US218629
申请日：1994-03-28
申请人： Hideo Kato , Nobutake Sugiura , Kiyotaka Uchigane , Masamichi Asano
发明人： Hideo Kato , Nobutake Sugiura , Kiyotaka Uchigane , Masamichi Asano
IPC分类号： G11C8/08 , G11C16/16 , G11C16/28 , G11C16/34 , G11C29/50 , G11C7/00
CPC分类号： G11C16/345 , G11C16/16 , G11C16/28 , G11C16/344 , G11C29/028 , G11C29/50 , G11C29/50004 , G11C29/50012 , G11C8/08 , G06F2201/81 , G11C16/04 , G11C2029/5004
摘要： When an erase voltage is applied to the sources of data erasable and rewritable memory cells each having a floating gate, the erasure characteristics of the memory cells can be improved by controlling the rise time of the erase voltage or by increasing the erase voltage stepwise. In test mode, no row lines are selected by a row decoder and further the sources of the respective memory cells are set to ground level. Under these conditions, in case there exists an overerased memory cell, this cell is turned on due to depletion, so that it is possible to detect the presence of the overerased memory cell on the basis of change in potential of the column line connected to this turned on memory cell. A differential amplifier is used to detect the change in potential of the column line. In the test mode, the potential of the column lines is compared with a reference potential applied to a dummy column line, and a source bias generating circuit applies a test potential suitable for test to the respective sources of the cells, to shift the threshold level of the respective cells in a positive direction, for instance. By applying this test potential to the cells, it is possible to detect the pseudo-threshold level shifted in the positive direction; that is, to detect the overerased status of the memory cell more properly.
摘要翻译：当擦除电压施加到每个具有浮动栅极的数据可擦除和可重写存储单元的源时，可以通过控制擦除电压的上升时间或逐步增加擦除电压来提高存储器单元的擦除特性。在测试模式下，行解码器不选择行行，并且进一步将各存储单元的源设置为地电平。在这些条件下，在存在过度存储单元的情况下，该单元由于耗尽而导通，从而可以基于连接到该存储单元的列线的电位变化来检测过度存储存储单元的存在打开内存单元。差分放大器用于检测列线的电位变化。在测试模式中，将列线的电位与施加到虚拟列线的参考电位进行比较，并且源偏置产生电路将适合于测试的测试电位施加到单元的各个源，以将阈值电平例如，各个单元的正方向。通过将该测试电位施加到单元，可以检测正向偏移的伪阈值电平; 也就是说，更正确地检测存储器单元的过渡状态。

54. 发明授权

US5196283A X-ray mask structure, and X-ray exposure process 失效
标题翻译： X射线掩模结构和X射线曝光过程
公开(公告)号：US5196283A
公开(公告)日：1993-03-23
申请号：US489277
申请日：1990-03-06
申请人： Tsutomu Ikeda , Masao Sugata , Hideo Kato
发明人： Tsutomu Ikeda , Masao Sugata , Hideo Kato
IPC分类号： G03F1/00 , G03F1/22
CPC分类号： G03F1/22
摘要： The present invention provides an X-ray mask structure having an X-ray transmissive membrane, an X-ray absorber held on an X-ray transmissive membrane, and a holding frame that holds the X-ray transmissive membrane, and the X-ray transmissive membrane has a layer of aluminum nitride, and the X-ray absorber has a heavy metal nitride.

55. 发明授权

US5178332A Fuel injection valve 失效
标题翻译：燃油喷射阀
公开(公告)号：US5178332A
公开(公告)日：1993-01-12
申请号：US809340
申请日：1991-12-18
申请人： Masayoshi Tsukakoshi , Hideo Kato
发明人： Masayoshi Tsukakoshi , Hideo Kato
IPC分类号： F02M51/06 , F02M51/08 , F02M61/18
CPC分类号： F02M51/0639 , F02M61/1853 , Y10T29/49433
摘要： A fuel injection valve has a flat injection hole plate arranged downstream of a valve seat on which a valve body is seated. A plurality of injection holes are formed through the injection hole plate in such a manner that the injection holes are inclined with respect to the axis of the valve body, to thereby increase the distance from the axis of the valve body in the downstream direction. The diameter of the injection hole is from 0.17 to 0.35 mm, and the chamfer dimension R at the inlet of the injection hole on the inlet side of the injection hole plate at the side close to the axis of the valve body, is greater than or equal to 0.1 mm. Accordingly, the flow reistance on the fuel flowing into the injection hole can be reduced, to thus prevent a vaporization of fuel due to a vacuum evaporation. With such a construction, even when the fuel injection valve is disposed in a vacuum box maintained in a vacuum atmosphere and an inspection for vacuum characteristics performed by injecting fuel, a variation of the flow rate can be maintained with good characteristics under a small flow rate variation rate and therefore, the production yield of the fuel injection valve can be improved.

56. 发明授权

US5101420A X-ray mask support and process for preparation thereof 失效
标题翻译： X射线掩模支撑及其制备方法
公开(公告)号：US5101420A
公开(公告)日：1992-03-31
申请号：US689092
申请日：1991-04-22
申请人： Nobuo Kushibiki , Hideo Kato , Akira Miyake , Yasuaki Fukuda
发明人： Nobuo Kushibiki , Hideo Kato , Akira Miyake , Yasuaki Fukuda
IPC分类号： G03F1/22 , G03F7/20
CPC分类号： G03F1/22 , G03F7/707 , G03F7/70858 , G03F7/70891
摘要： An X-ray mask support comprises a support frame and a support film, wherein both of the support frame and the support film have a thermal expansion coefficient of not more than 1.times.10.sup.-5 K.sup.-1 or wherein the thermal expansion coefficient of the support film does not exceed that of the support flame or wherein both the support frame and the support film have a thermal expansion coefficient of not more than 1.times.10.sup.-5 K.sup.-1 and the support film has a surface roughness at least on the mask surface, of not more than 10 nm r.m.s. Basically a process for preparing the X-ray support film comprises the steps of forming a film on a substrate and sintering the film.

57. 发明授权

US5073726A Input circuit of semiconductor integrated circuit and semiconductor integrated circuit having input circuit 失效
标题翻译：具有输入电路的半导体集成电路和半导体集成电路的输入电路
公开(公告)号：US5073726A
公开(公告)日：1991-12-17
申请号：US559139
申请日：1990-07-30
申请人： Hideo Kato , Shinichi Kikuchi , Hiroto Nakai , Hiroshi Iwahashi
发明人： Hideo Kato , Shinichi Kikuchi , Hiroto Nakai , Hiroshi Iwahashi
IPC分类号： H03K19/0185 , H03K19/003 , H03K19/0948
CPC分类号： H03K19/00384 , H03K19/00361
摘要： There is disclosed a semiconductor integrated circuit provided with an input circuit including an N-channel MOS transistor of which threshold voltage is set to a value lower than those of N-channel MOS transistors constituting other internal circuits of the integrated circuit. Thus, a circuit having a high operating margin for power supply noises is provided. This circuit further comprises a P-channel MOS transistor constituting a portion of a NOR gate or a NAND gate together with the above-mentioned N-channel MOS transistor.

58. 发明授权

US4956249A Mask structure for lithography 失效
标题翻译：光刻的掩模结构
公开(公告)号：US4956249A
公开(公告)日：1990-09-11
申请号：US398309
申请日：1989-08-25
申请人： Hideo Kato , Hirohumi Shibata , Keiko Matsushita , Osamu Takamatsu
发明人： Hideo Kato , Hirohumi Shibata , Keiko Matsushita , Osamu Takamatsu
IPC分类号： G03F1/22
CPC分类号： G03F1/22 , Y10S430/168
摘要： A mask structure for lithography comprising an annular base plate supporting a peripheral portion of a masking-material-holding film provided on a surface thereof with a desired pattern of the masking material is provided which is characterized in that the masking-material-holding film and the base plate are bonded together at an outer peripheral surface, which is connected smoothly or with an appropriate angle to the topmost flat end surface of the base plate and is at a lower level than the topmost flat end surface of the base plate, or at a surface contiguous to the outer peripheral surface.
摘要翻译：提供了一种用于光刻的掩模结构，其包括环形基板，其支撑设置在其表面上的掩模材料保持膜的周边部分，其具有期望的掩模材料图案，其特征在于，掩模材料保持膜和基板在与基板的最顶端的平坦端面平滑地或适当的角度连接的外周面接合在一起，并且位于比基板的最上面的平坦端面低的位置处，或者在与外围表面相邻的表面。

59. 发明授权

US4905314A Semiconductor integrated circuit device having an object circuit to which output voltages of the sub- and main booster circuits are applied 失效
标题翻译：半导体集成电路装置具有对主电路施加副主电路和主升压电路的输出电压的目标电路
公开(公告)号：US4905314A
公开(公告)日：1990-02-27
申请号：US184580
申请日：1988-04-21
申请人： Hideo Kato , Hiroshi Iwahashi , Masamichi Asano , Akira Narita , Shinichi Kikuchi
发明人： Hideo Kato , Hiroshi Iwahashi , Masamichi Asano , Akira Narita , Shinichi Kikuchi
IPC分类号： G11C17/00 , G11C5/14 , G11C16/06 , G11C16/30 , H01L21/822 , H01L21/8234 , H01L21/8247 , H01L27/04 , H01L27/088 , H01L27/10 , H01L29/788 , H01L29/792 , H02M3/07 , H03K3/356 , H03K17/06
CPC分类号： G11C5/145 , G11C16/30 , H03K17/06 , H03K3/356008
摘要： A sub-booster circuit for further stepping up an output voltage of a main booster circuit includes a first MOS transistor having a drain connected to the output terminal of the main booster circuit, and a gate connected to an input terminal of an object circuit, a second MOS transistor having a drain and a gate connected to the source of the first MOS transistor and a source connected to the input terminal of the object circuit, and a MOS capacitor having a first electrode connected to a connection node between the first and second MOS transistors and a second electrode connected to receive a clock pulse signal. A threshold voltage of the second MOS transistor is set to be larger in its absolute value than a threshold voltage of the first MOS transistor and the MOS capacitor has substantially the same threshold voltage as that of the second MOS transistor.

60. 发明授权

US4804929A Control pulse generator 失效
标题翻译：控制脉冲发生器
公开(公告)号：US4804929A
公开(公告)日：1989-02-14
申请号：US101667
申请日：1987-09-28
申请人： Hideo Kato , Hiroshi Iwahashi , Masamichi Asano , Akira Narita , Shinichi Kikuchi
发明人： Hideo Kato , Hiroshi Iwahashi , Masamichi Asano , Akira Narita , Shinichi Kikuchi
IPC分类号： H03K3/037 , H03K17/22 , H03L1/00 , H03B1/00
CPC分类号： H03K17/223
摘要： A control pulse generator according to the present invention includes a voltage generator for generating an output voltage proportional to a power supply voltage, an inverter for generating an inversion signal whose signal level is inverted when the output voltage from the voltage generator reaches a predetermined value, and a pulse signal generator for delaying a level inversion timing of the inversion signal by a predetermined delay time, and generating a control pulse having a width corresponding to the delay time. According to the control pulse generator with the above arrangement, the width of the control pulse can be determined on the basis of the delay time of the pulse signal generator, regardless of rise states of the power supply voltage. In addition, the height of the control pulse can be set at a desired value according to a supply voltage to the pulse signal generator, regardless of rise states of the supply voltage.
摘要翻译：根据本发明的控制脉冲发生器包括用于产生与电源电压成比例的输出电压的电压发生器，用于产生当来自电压发生器的输出电压达到预定值时信号电平反转的反相信号的反相器，以及脉冲信号发生器，用于将反转信号的电平反转定时延迟预定的延迟时间，并产生具有对应于延迟时间的宽度的控制脉冲。根据具有上述配置的控制脉冲发生器，无论电源电压的上升状态如何，可以基于脉冲信号发生器的延迟时间来确定控制脉冲的宽度。此外，无论电源电压的上升状态如何，控制脉冲的高度可以根据与脉冲信号发生器的电源电压设定在期望值。

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