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51. 发明授权

US07491626B2 Layer growth using metal film and/or islands 有权
标题翻译：使用金属膜和/或岛的层生长
公开(公告)号：US07491626B2
公开(公告)日：2009-02-17
申请号：US11424999
申请日：2006-06-19
申请人： Remigijus Gaska , Jianping Zhang , Michael Shur
发明人： Remigijus Gaska , Jianping Zhang , Michael Shur
IPC分类号： H01L21/20
CPC分类号： C30B29/403 , C30B25/02 , H01L21/0237 , H01L21/02458 , H01L21/02502 , H01L21/0251 , H01L21/0254 , H01L21/02584 , H01L21/02614
摘要： A solution for manufacturing a nitride-based heterostructure, semiconductor, device, or the like, by growing one or more layers using a metal film and/or nitride islands is provided. In an embodiment of the invention, a group-III nitride film is grown on a surface of a lower layer. The nitride film is grown by first epitaxially growing a group-III metal film on the surface in a substantially nitrogen-free atmosphere. The group-III metal film is grown such that it covers substantially an entire area of the surface. Next, the group-III metal film is nitridated to form a group-III nitride film. This process can be repeated one or more times to form the layer. In another embodiment of the invention, islands are formed on a surface of a lower layer from a group-III nitride film. The islands can be used to subsequent group-III nitride growth to form the group-III nitride layer. The invention provides an improved solution for growing a layer that can be used to generate heterostructures/semiconductors/devices having improved characteristics.
摘要翻译：提供了通过使用金属膜和/或氮化物岛生长一个或多个层来制造氮化物基异质结构，半导体，器件等的解决方案。在本发明的一个实施例中，III族氮化物膜生长在下层的表面上。通过在基本无氮的气氛中在表面上首先外延生长III族金属膜来生长氮化物膜。 III族金属膜生长使得其覆盖基本上整个表面的整个区域。接着，将III族金属膜氮化，形成III族氮化物膜。该过程可以重复一次或多次以形成该层。在本发明的另一个实施例中，在III族氮化物膜的下层的表面上形成岛。这些岛可用于随后的III族氮化物生长以形成III族氮化物层。本发明提供了用于生长可用于产生具有改进特性的异质结构/半导体/器件的层的改进的解决方案。

52. 发明申请

US20080081390A1 Nitride-based light emitting heterostructure 有权
标题翻译：基于氮化物的发光异质结构
公开(公告)号：US20080081390A1
公开(公告)日：2008-04-03
申请号：US11951607
申请日：2007-12-06
申请人： Remigijus Gaska , Jianping Zhang , Michael Shur
发明人： Remigijus Gaska , Jianping Zhang , Michael Shur
IPC分类号： H01L33/00
CPC分类号： H01L33/06 , B82Y20/00 , H01L33/32 , H01S5/105 , H01S5/2009 , H01S5/3216 , H01S5/3407 , H01S5/3415 , H01S5/34333 , H01S5/34346
摘要： An improved nitride-based light emitting heterostructure is provided. The nitride-based light emitting heterostructure includes an electron supply layer and a hole supply layer with a light generating structure disposed there between. The light generating structure includes a set of barrier layers, each of which has a graded composition and a set of quantum wells, each of which adjoins at least one barrier layer. Additional features, such as a thickness of each quantum well, can be selected/incorporated into the heterostructure to improve one or more of its characteristics. Further, one or more additional layers that include a graded composition can be included in the heterostructure outside of the light generating structure. The graded composition layer(s) cause electrons to lose energy prior to entering a quantum well in the light generating structure, which enables the electrons to recombine with holes more efficiently in the quantum well.
摘要翻译：提供了一种改进的基于氮化物的发光异质结构。氮化物系发光异质结构包括电子供给层和在其间设置有发光结构的空穴供给层。光产生结构包括一组阻挡层，每个阻挡层具有梯度组成和一组量子阱，每个量子阱邻接至少一个势垒层。附加特征，例如每个量子阱的厚度，可以选择/并入异质结构以改善其一个或多个特性。此外，包括渐变组合物的一个或多个附加层可以包含在发光结构外部的异质结构中。渐变的组成层在光生成结构中进入量子阱之前导致电子失去能量，这使得电子能够在量子阱中更有效地与空穴重新组合。

53. 发明申请

US20070181869A1 HETEROSTRUCTURE INCLUDING LIGHT GENERATING STRUCTURE CONTAINED IN POTENTIAL WELL 有权
标题翻译：包括在潜在井中包含的发光结构的结构
公开(公告)号：US20070181869A1
公开(公告)日：2007-08-09
申请号：US11539754
申请日：2006-10-09
申请人： Remigijus Gaska , Michael Shur , Jianping Zhang
发明人： Remigijus Gaska , Michael Shur , Jianping Zhang
IPC分类号： H01L31/00 , H01L21/00
CPC分类号： H01L33/06 , B82Y20/00
摘要： A light emitting heterostructure and/or device in which the light generating structure is contained within a potential well is provided. The potential well is configured to contain electrons, holes, and/or electron and hole pairs within the light generating structure. A phonon engineering approach can be used in which a band structure of the potential well and/or light generating structure is designed to facilitate the emission of polar optical phonons by electrons entering the light generating structure. To this extent, a difference between an energy at a top of the potential well and an energy of a quantum well in the light generating structure can be resonant with an energy of a polar optical phonon in the light generating structure material. The energy of the quantum well can comprise an energy at the top of the quantum well, an electron ground state energy, and/or the like.
摘要翻译：提供了一种发光异质结构和/或其中发光结构被包含在势阱内的器件。势阱被配置为在发光结构内容纳电子，空穴和/或电子和空穴对。可以使用声子工程方法，其中将潜在阱和/或光产生结构的带结构设计为便于通过进入发光结构的电子发射极性光学声子。在这种程度上，在发光结构材料中，势阱的顶部的能量与光产生结构中的量子阱的能量之间的差可以与极性光学声子的能量共振。量子阱的能量可以包括量子阱顶部的能量，电子基态能量和/或类似物质。

54. 发明授权

US07232848B2 Gas agitated multiphase reactor with stationary catalyst solid phase 有权
标题翻译：具有固定催化剂固相的气体搅拌多相反应器
公开(公告)号：US07232848B2
公开(公告)日：2007-06-19
申请号：US10238008
申请日：2002-09-09
申请人： Sergio R. Mohedas , Rafael L. Espinoza , Jianping Zhang
发明人： Sergio R. Mohedas , Rafael L. Espinoza , Jianping Zhang
IPC分类号： C07C27/26 , B01J8/04
CPC分类号： C10G2/341 , B01J8/0292 , B01J8/067 , B01J10/007 , B01J2208/00132 , B01J2208/00194 , B01J2208/00203 , B01J2208/00814 , B01J2208/00884 , B01J2219/00081 , C07C27/22
摘要： An apparatus for converting a gaseous and/or liquid feed fluid to gaseous and/or liquid products using a solid catalyst comprises a reactor, a liquid phase disposed within the reactor volume, a fixed catalyst at least partially disposed in the liquid phase, a cooling system having a cooling element in thermal contact with the liquid phase, a feed inlet positioned to feed the feed fluid into the reactor volume, and a fluid outlet in fluid communication with the liquid phase. The catalyst is contained in a catalyst container and the container may be adjacent to said cooling element, extend through said cooling element, or may surround the catalyst container. The catalyst may be a Fischer-Tropsch catalyst.
摘要翻译：使用固体催化剂将气体和/或液体进料流体转化为气体和/或液体产物的装置包括反应器，设置在反应器体积内的液相，至少部分地设置在液相中的固定催化剂，冷却系统，其具有与液相热接触的冷却元件，定位成将进料流体进料到反应器体积中的进料口和与液相流体连通的流体出口。催化剂包含在催化剂容器中，并且容器可以与所述冷却元件相邻，延伸穿过所述冷却元件，或可围绕催化剂容器。催化剂可以是费 - 托催化剂。

55. 发明申请

US20060286782A1 Layer Growth Using Metal Film and/or Islands 有权
标题翻译：使用金属膜和/或群岛的层生长
公开(公告)号：US20060286782A1
公开(公告)日：2006-12-21
申请号：US11424999
申请日：2006-06-19
申请人： Remigijus Gaska , Jianping Zhang , Michael Shur
发明人： Remigijus Gaska , Jianping Zhang , Michael Shur
IPC分类号： H01L21/20 , H01L21/36 , H01L31/20
CPC分类号： C30B29/403 , C30B25/02 , H01L21/0237 , H01L21/02458 , H01L21/02502 , H01L21/0251 , H01L21/0254 , H01L21/02584 , H01L21/02614
摘要： A solution for manufacturing a nitride-based heterostructure, semiconductor, device, or the like, by growing one or more layers using a metal film and/or nitride islands is provided. In an embodiment of the invention, a group-III nitride film is grown on a surface of a lower layer. The nitride film is grown by first epitaxially growing a group-III metal film on the surface in a substantially nitrogen-free atmosphere. The group-III metal film is grown such that it covers substantially an entire area of the surface. Next, the group-III metal film is nitridated to form a group-III nitride film. This process can be repeated one or more times to form the layer. In another embodiment of the invention, islands are formed on a surface of a lower layer from a group-III nitride film. The islands can be used to subsequent group-III nitride growth to form the group-III nitride layer. The invention provides an improved solution for growing a layer that can be used to generate heterostructures/semiconductors/devices having improved characteristics.
摘要翻译：提供了通过使用金属膜和/或氮化物岛生长一个或多个层来制造氮化物基异质结构，半导体，器件等的解决方案。在本发明的一个实施例中，III族氮化物膜生长在下层的表面上。通过在基本无氮的气氛中在表面上首先外延生长III族金属膜来生长氮化物膜。 III族金属膜生长使得其覆盖基本上整个表面的整个区域。接着，将III族金属膜氮化，形成III族氮化物膜。该过程可以重复一次或多次以形成该层。在本发明的另一个实施例中，在III族氮化物膜的下层的表面上形成岛。这些岛可用于随后的III族氮化物生长以形成III族氮化物层。本发明提供了用于生长可用于产生具有改进特性的异质结构/半导体/器件的层的改进的解决方案。

56. 发明授权

US07115669B2 Minimizing the volume or maximizing the production rate of slurry bubble reactors by using large gas flow rates and moderate single pass conversion 失效
标题翻译：通过使用大气体流速和中等单程转换，最小化体积或最大化浆料气泡反应器的生产速率
公开(公告)号：US07115669B2
公开(公告)日：2006-10-03
申请号：US10205215
申请日：2002-07-25
申请人： Jianping Zhang , Harold A. Wright
发明人： Jianping Zhang , Harold A. Wright
IPC分类号： C07C27/00
CPC分类号： C10G2/342 , B01J8/1809 , B01J8/22 , B01J2208/00274 , B01J2208/003 , B01J2208/00539 , B01J2208/00548 , B01J2219/00006 , B01J2219/00038 , B01J2219/0004
摘要： A gas-agitated multiphase reactor system that is effective for enabling maximum reactor productivity or minimizing reactor volume comprising at least two stages with or without recycle, wherein inlet gas superficial velocity is at least 20 cm/sec at Fischer-Tropsch synthesis, yielding a total syngas conversion of greater than about 90%, while syngas conversion in each reactor is less than 60%. More specifically, the total reactor volume is held to a minimum such that minimum reactor volume is less than 0.02 cubic meters total reactor volume/(kg C5+/hr production).
摘要翻译：一种气体搅拌的多相反应器系统，其有效用于实现最大反应器生产率或最小化反应器体积，其包含至少两个阶段，其具有或不具有再循环，其中在费 - 托合成时入口气体表观速度为至少20cm / sec，产生总计合成气转化率大于约90％，而每个反应器中的合成气转化率小于60％。更具体地说，将总反应器体积保持在最小值，使得最小反应器体积小于总体反应器体积/（kg C 5 + / hr生产）的0.02立方米。

57. 发明申请

US20060118820A1 Nitride-based light emitting heterostructure 有权
公开(公告)号：US20060118820A1
公开(公告)日：2006-06-08
申请号：US11292519
申请日：2005-12-02
申请人： Remigijus Gaska , Jianping Zhang , Michael Shur
发明人： Remigijus Gaska , Jianping Zhang , Michael Shur
IPC分类号： H01L31/109
CPC分类号： H01L33/06 , B82Y20/00 , H01L33/32 , H01S5/105 , H01S5/2009 , H01S5/3216 , H01S5/3407 , H01S5/3415 , H01S5/34333 , H01S5/34346
摘要： An improved nitride-based light emitting heterostructure is provided. The nitride-based light emitting heterostructure includes an electron supply layer and a hole supply layer with a light generating structure disposed there between. The light generating structure includes a set of barrier layers, each of which has a graded composition and a set of quantum wells, each of which adjoins at least one barrier layer. Additional features, such as a thickness of each quantum well, can be selected/incorporated into the heterostructure to improve one or more of its characteristics. Further, one or more additional layers that include a graded composition can be included in the heterostructure outside of the light generating structure. The graded composition layer(s) cause electrons to lose energy prior to entering a quantum well in the light generating structure, which enables the electrons to recombine with holes more efficiently in the quantum well.

58. 发明授权

US09123833B2 Defect-controlling structure for epitaxial growth, light emitting device containing defect-controlling structure, and method of forming the same 有权
标题翻译：用于外延生长的缺陷控制结构，含有缺陷控制结构的发光器件及其形成方法
公开(公告)号：US09123833B2
公开(公告)日：2015-09-01
申请号：US14231316
申请日：2014-03-31
申请人： Jianping Zhang , Hongmei Wang , Chunhui Yan
发明人： Jianping Zhang , Hongmei Wang , Chunhui Yan
IPC分类号： H01L33/00 , H01L33/06 , H01L21/02 , H01L33/02 , H01L33/12 , B82Y10/00 , B82Y30/00
CPC分类号： H01L33/0075 , B82Y10/00 , B82Y30/00 , H01L21/02458 , H01L21/02513 , H01L21/0254 , H01L21/02601 , H01L21/0262 , H01L21/02631 , H01L33/007 , H01L33/025 , H01L33/06 , H01L33/12
摘要： A method for reducing dislocations or other defects in a light emitting device, such as light emitting diode (LED), by in-situ introducing nanoparticles into at least one of a defect-controlling layer, an n-type layer, a p-type layer, and a quantum well of the light emitting device. A light emitting device is provided, and nanoparticles are dispensed in-situ in at least one of a defect-controlling layer, an n-type layer, a p-type layer, and a quantum well of the light emitting device.
摘要翻译：通过将纳米颗粒原位引入到缺陷控制层，n型层，p型中的至少一种中，减少诸如发光二极管（LED）的发光器件中的位错或其它缺陷的方法层和发光器件的量子阱。提供了一种发光器件，并且纳米颗粒在发光器件的缺陷控制层，n型层，p型层和量子阱中的至少一个中被原位分配。

59. 发明授权

US08785904B2 Light-emitting device with low forward voltage and method for fabricating the same 有权
标题翻译：具有低正向电压的发光装置及其制造方法
公开(公告)号：US08785904B2
公开(公告)日：2014-07-22
申请号：US13090899
申请日：2011-04-20
申请人： Jianping Zhang , Hongmei Wang , Chunhui Yan
发明人： Jianping Zhang , Hongmei Wang , Chunhui Yan
IPC分类号： H01L29/06
CPC分类号： H01L33/04 , H01L33/14 , H01L33/32 , H01L33/385
摘要： A light emitting device with reduced forward voltage Vf by utilizing the excellent lateral conduction of two-dimensional electron gas (2DEG) and two-dimensional hole gas (2DHG) structure and, more specifically, by improving the vertical conduction of 2DEG and 2DHG structure by means of vertical conductive passages formed in 2DEG and 2DHG structure. The conductive passages are formed via discontinuities in 2DEG and 2DHG structure. The discontinuities can be in the form of openings by etching 2DEG or 2DHG structure, or in the form of voids by growing 2DEG or 2DHG structure on a rough surface via epitaxy facet control. The discontinuities can be formed by vertical displacement of 2DEG structure. A method is provided for manufacturing a light emitting device with reduced forward voltage same.
摘要翻译：通过利用二维电子气（2DEG）和二维空穴气体（2DHG）结构优异的横向导通，具有降低的正向电压Vf的发光器件，更具体地，通过改进2DEG和2DHG结构的垂直传导以2DEG和2DHG结构形成的垂直导电通道的装置。导电通道是通过2DEG和2DHG结构的不连续形成的。通过蚀刻2DEG或2DHG结构，或通过在粗糙表面上通过外延小面控制生长2DEG或2DHG结构，以空隙的形式，不连续性可以是开口的形式。可以通过2DEG结构的垂直位移形成不连续性。提供了一种用于制造具有相同的正向电压降低的发光器件的方法。

60. 发明授权

US08723201B2 Light-emitting devices with substrate coated with optically denser material 有权
标题翻译：具有涂覆有光密度较高的材料的基底的发光器件
公开(公告)号：US08723201B2
公开(公告)日：2014-05-13
申请号：US12860206
申请日：2010-08-20
申请人： Chunhui Yan , Jianping Zhang
发明人： Chunhui Yan , Jianping Zhang
IPC分类号： H01L33/58
CPC分类号： H01L33/44 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2224/49107 , H01L2933/0091 , H01L2924/00014
摘要： A light-emitting device includes a transparent substrate with a light emitting structure formed on one side of the substrate and a transparent layer formed on the opposing side of the substrate. The refractive index of the transparent layer is greater than the refractive index of the substrate. A light-emitting device includes a package cup having a reflective sidewall and a light emission surface and a light emitting diode (LED) embedded in the package cup. The LED comprises a transparent substrate and a transparent layer formed on the substrate. The reflective sidewall has a first portion in a central area of the package cup and a second portion in a peripheral area of the package cup, the first portion reflects light emitted from the transparent layer to the second portion and, then, the second portion further reflects the light received from the first portion to the light emission surface of the package cup.
摘要翻译：发光装置包括具有形成在基板的一侧上的发光结构的透明基板和形成在基板的相对侧上的透明层。透明层的折射率大于基板的折射率。发光装置包括具有反射侧壁和发光表面的封装杯和嵌入在封装杯中的发光二极管（LED）。 LED包括透明基板和形成在基板上的透明层。反射侧壁具有在封装杯的中心区域中的第一部分和封装杯的外围区域中的第二部分，第一部分将从透明层发射的光反射到第二部分，然后将第二部分进一步反射将从第一部分接收的光反射到封装杯的发光表面。

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